基于智能移动终端的智能家居技术专利分析

随着无线通信技术和智能移动终端的发展,用智能移动终端借助无线通信网络随时随地控制智能家居成为可能,也成为业界关注的热点。针对基于智能移动终端的智能家居技术的特点、国内专利申请分布情况、专利涉及的主要领域、主要专利申请人、涉及的关键技术等方面进行了分析和研究。     

移动互联网领域VoIP技术专利分析

随着互联网技术、语音通信技术和智能移动终端的发展,用智能移动终端借助IP网络随时随地拨打廉价的语音电话成为可能,也成为业界关注的热点.针对移动互联网领域VolP技术的特点、国内专利申请分布情况、专利涉及的主要领域、主要专利申请人、涉及的关键技术挑战进行了分析和研究.     

浅析移动终端解锁锁定技术领域专利分析

随着移动互联网技术的发展,基于图形用户界面的人机交互技术的发展也日益壮大.其中,是移动终端解锁锁定技术的发展越来越体现出对于用户良好的操作体验的重视.针对涉及移动终端解锁锁定技术领域的专利申请,进行了关键技术和检索应用的研究.通过关键技术对该领域的重要专利进行分析,对领域内的专利检索进行了分类号比对和关键词扩充,同时给出了实际应用的示例.     

智能移动终端信息安全风险现状与展望

近年来,以智能手机及其周边设备为代表的智能移动终端迅速普及,但涉及智能移动终端信息安全问题的相关报道也呈现上升趋势.通过以当前智能移动终端与信息安全发展现状为出发点,梳理智能移动终端信息安全功能的发展历史,总结平台结构的主要特征,论述了智能移动终端信息安全风险现状及对策,展望未来信息安全风险的研究方向.     

移动互联网终端技术

文章基于移动互联网终端类型、主流智能操作系统、人机交互界面及热点应用等方面的技术进展,分析了当前主要的移动互联网终端技术。文章认为由于移动互联网终端在系统硬件技术、人机交互技术、操作系统技术、商业模式和应用开发上的跳跃性发展,将带动移动互联网终端以及移动互联网应用服务市场的高速扩张;云计算概念的出现、应用服务概念的推广将进一步推动移动互联网的快速发展,移动互联网终端市场亦将呈现繁荣景象。     

从一个无效案例谈创造性的判断

涉及实用新型专利创造性的判断问题,针对“所属领域技术人员容易想到”概念的内涵进行剖析,结合实际案例,对从“所属领域技术人员容易想到”角度判断实用新型专利是否具备创造性进行了分析.在创造性的判断过程中,应当严格按照审查指南,从技术启示的角度思考问题,充分尊重事实依据.     

快速消费品销售管理智能移动终端研究

快速消费品销售管理终端是与位置密切相关、基于智能移动终端技术的行业定制终端。分析了行业定制智能移动终端的国内外现状,探讨了开发快速消费品销售管理终端所涉及的关键技术,制定了终端开发的技术路线,并对终端的产业化和市场前景进行了展望。     

智能电视人机交互技术的专利分析

介绍了智能电视人机交互技术的含义及发展现状,并使用中国国家知识产权局网站的专利检索与服务系统对智能电视的人机交互技术进行了检索,按照区域、技术领域并结合申请人对智能电视的人机交互技术进行了分析,并预测未来人机交互技术的发展趋势,希望能对国内相关行业发展有所帮助.     

苹果和三星在中国移动终端领域的专利分析

分析了苹果公司和三星电子在移动终端领域中的专利申请,对其专利申请趋势、类型,与移动终端相关的多个技术领域的专利布局进行了展示.可以了解到苹果公司和三星电子在移动终端领域的专利分布状况和特点,同时也为其他IT公司,尤其是国内IT公司在研发和专利布局方面提供参考.     

有关移动互联网终端技术的浅议

移动互联网的发展,带动了移动互联网终端技术的发展和应用。本文首先对移动互联网终端的分类进行研究,从硬件、软件、人机交互技术等方面对移动互联网终端技术进行探讨。     

Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.     

Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given.     

Subthreshold behaviour of e.s.f.i.-s.o.s. transistors

Theoretical and experimental results are presented which illustrate the influence of various parameters on the subthreshold behaviour of e.s.f.i.-s.o.s. transistors. The numerical analysis accounts for the thin silicon film and the existence of a second interface. A comparison is made with a corresponding bulk transistor, furthermore, between a two- and a one-dimensional analysis of e.s.f.i.-s.o.s. m.o.s.t. The agreement for real cases is found to be excellent.     

Performance of GaAs power m.e.s.f.e.t.s

Power performance results at 4 GHz are summarised for GaAs m.e.s.f.e.t.s ranging in size from 4 to 16 mm gate periphery. A double-chip 16 mm unit operated at 24 V source-drain bias produced 13.5 W with 3 dB gain and 10.7 W with 8.1 dB gain. Although lack of perfect power and gain scaling is observed, the degradation in output power of the 16 mm devices was only 1 dB compared to the smaller devices.     

Conversion gain of m.e.s.f.e.t. drain mixers

A theoretical analysis of the gain properties of m.e.s.f.e.t. drain mixers is presented. The m.e.s.f.e.t. model includes the nonlinearity of both the transconductance and the drain resistance. For a special case, a simple analytical expression for the gain is given. Numerical results for a typical example are briefly presented as an illustration.     

Substrate dependence of InP m.e.s.f.e.t. performance

There is evidence to suggest that Fe outdiffuses, during the growth, into the epitaxial films prepared by vapour-phase epitaxy at 650°C. Field-effect transistors on Fe-doped material show substantial looping that was absent on Cr-doped material and exhibit about 2 dB worse noise figure at about 7 GHz. Experiments with low 1015 S-doped InP grown on Sn-, Cr- and Fe-doped substates indicate that such outdiffusion is typically about 5 ?m. Saturation velocity levels in the m.e.s.f.e.t. channel are about 1.7 × 107 cm/s and 1.3 × 107 cm/s, associated with Cr and Fe doped substrates, respectively.     

New structure of enhancement-mode GaAs microwave m.o.s.f.e.t.

This letter proposes a new feasible device structure of an enhancement-mode GaAs deep-depletion m.o.s.f.e.t. as an attractive alternative to the junction-gate f.e.t.s and describes its microwave properties. The device has been fabricated on a high-resistance epitaxial n?-layer by simple readily available technology without requiring the sophisticated control of the channel thickness needed for the conventional junction-gate f.e.t.s. The 'normally-off nature of the device can be explained on the basis of the substrate space-charge region extending over then?-layer. The microwave performance of the device can be favourably compared with that of currently achievable junction-gate normally-off f.e.t.s. Unilateral gain drops to zero at a frequency slightly above 7 GHz.     

Analytical realisation of e.v.c.-a.r.c. networks

Consideration is given to the complete analytic solution of 3rd-order equal-valued-capacitor RC (e.v.c.-a.r.c.) networks due to Dutta Roy and Malik, and realisability limits are derived. The practically desirable cases of minimum resistor sum and minimum resistor spread are shown to occur at the same value of amplifier gain.     

White-light response of an m.o.s.t.

The photocurrent in an m.o.s.t. due to white-light illumination is studied. From the dependence of the photocurrent on the gate and drain voltages at different light intensities, the mechanisms responsible for the photocurrent are discussed.     

Efficient algorithm for determination of a.r. part of a.r.m.a. model

A fast recursive scheme is given for the solution of the Yule-Walker equations to obtain the a.r. part of an a.r.m.a. model. A lattice equivalent to the predictive filter is also included. This new structure requires what is subsequently called an adjoint model. The algorithm can be used in the evaluation of the a.r. and m.a. parsimonious orders.