Moiecuiar Doped Poiymer Light Emitting Diodes with Air—stabie Aluminum as Cathode

By using air-stable alumminum as cathode,molecular doped polymer (MDP)blue light emitting diodes(LEDs)were constructed.Poly(N-vinylcarbazole(PVK)doped with,1,1,4,4-tetrapheny 1-1,3-butadiens(TPB)was used as the light-emitting layer,a layer of 2-(4-biphenylyl)-5-(4-terbutypheny)1-3,4-oxadiazole(PBD) as hole-blocking,electron-transporting layer and a layer of tris(8-quinolinolate)-Aluminum(Alq3)film also worked as an electron-transporting layer.The device with structure of ITO/PVK;TPB/PBD/Alq3/Al was fabricated.Blue emis-sion began at about 4V,more than 1000 cd/m^2 was achieved at 14V.This is the lowest turn-on voltage for polymeric lgiht-emitting diodes(PLEDS)used air-stable elec-trodes.Such low-operating voltage,especially using air-stable aluminum as cathode,may be helpful for the devices to be used in commercially viable displays.     

单片集成式氮化镓基发光二极管的设计与制造

We report a new monolithic structure of GaN-based light-emitting diode(LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode(MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.     

Fabrication of High-power White LEDs and White Light Uniformity Testing

As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated hy a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is used as the primary source for exciting fluorescent material such as cerium doped yttrium aluminum garnet with the formula Y3Al2O12 ： Ce^3＋ （in short： YAG ： Ce^3＋ ）. The matching of the spectrum of the blue LED chips and the YAG ： Ce^3＋ yellow phosphor is studied to improve the conversion efficiency. The packaging methods and manufacturing processes for high power single chip-white LEDs are introduced. The uniformity of the output white light is investigated. Based on the characteristics of the high power white LEDs, some approaches and processes are suggested to improve the light uniformity when they are fabricated. The effectiveness of those approaches on the improvement of LEDs is discussed in detail and some interesting conclusions are also presented.     

Preparation of GaN-on-Si based thin-film flip-chip LEDs

GaN based MQW epitaxial layers were grown on Si(111) substrate by MOCVD using AIN as the buffer layer.High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design.The blue and white 1.1×1.1 mm~2 LED lamps are measured.The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW,and 50.3%at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm.     

Investigation of nanometer-scale films using low angle X-ray reflectivity analysis in IPOE

The X-ray low angle reflectivity measurement is used to investigate single and bilayer films to determine the parameters of nanometer-scale structures,three effectual methods are presented by using X-ray reflectivity analysis to provide an accurate estimation of the nanometer film structures. The parameters of tungsten (W) single layer, such as the material density, interface roughness and deposition rate, were obtained easily and speedily. The base metal layer was introduced to measure the profiles of single low Z material film. A 0.3 nm chromium (Cr) film was also studied by low angle reflectivity analysis.     

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates.The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode,together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer.When operated at 350 mA,the via-TF-LED gave an enhanced blue LOP by 7.8％ and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED).After covering with yellow phosphor that converts some blue photons into yellow light,the via-TF-LED emitted an enhanced white luminous flux by 13.5％ and over 5 times,as compared with the white TF-LED and the white LS-LED,respectively.The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.     

Effect of BCP ultrathin layer on the performance of organic light-emitting devices

Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9-dimethyl-4,7-diphenyl- 1,10-phenanthroline (BCP)/ 8-Hydroxyquinoline aluminum (Alq3)/Mg:Ag using vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electrolumines- cence (EL) spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W.     

Growth and optical properties of Dy3+/Eu3+ co-doped NaYF4 single crystals with cubic lattice for white LED application

Dy3+/Eu3+ co-doped cubic lattice NaYF4 single crystal with high quality in the size of ~Φ1.0 cm×10.0 cm was grown by an improved Bridgman method using potassium fluoride (KF) as assistant flux. X-ray diffraction (XRD), absorption spectra, excitation spectra and emission spectra are measured to investigate the phase and luminescent properties of the crystal. The effects of excitation wavelength and concentrations of Dy3+ and Eu3+ ions on the luminescent characteristics are analyzed. The NaYF4 single crystal with the doping molar concentrations of 1.205% Dy3+ and 0.366% Eu3+ exhibits an excellent white light emission with chromaticity coordinates of x=0.321, y=0.332. It indicates that the Dy3+/Eu3+ co-doped cubic lattice NaYF4 single crystal can be a potential luminescent material for the ultraviolet (UV) light excited white light emitting diode (w-LED).     

LWIR HgCdTe on Si detector performance and analysis

We have fabricated a series of 256 pixel×256 pixel, 40 μm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s double layer planar heterostructure (DLPH) diode architecture. The 78 K detector and focal plane array (FPA) performance are discussed in terms of quantum efficiency (QE), diode dark current and dark current operability. The FPA dark current and the tail in the FPA dark current operability histograms are discussed in terms of the HgCdTe epitaxial layer defect density and the dislocation density of the individual diode junctions. Individual diode zero bias impedance and reverse bias current-voltage (I-V) characteristics vs. temperature are discussed in terms of the dislocation density of the epitaxial layer, and the misfit stress in the epitaxial multilayer structure, and the thermal expansion mismatch in the composite substrate. The fundamental FPA performance limitations and possible FPA performance improvements are discussed in terms of basic device physics and material properties.     

Band structures, defect mode and field propagation characteristics in one-dimensional photonic crystals composed of single-negative materials

By using the transfer matrix, the band structures, defect mode and field propagation characteristics of one-dimensional photonic crystals composed of single-negative （SNG） material are studied. It is shown that this structure possesses a new type of photonic gap which is insensitive to the incident angle and the light polarizations, as well the change of scale length. When a normal dielectric defect layer is inserted, the defect mode is insensitive to the angle of incidence, but the electromagnetic field in the defect layer is strongly localized, and the number of the defect modes increases with the thickness of the defect layer.     

Molecular Doped Polymer Light Emiting Diodes with Air－stable Aluminum as Cathode

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Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum

Organic light-emitting devices (OLEDs) with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum were fabricated using a vacuum evaporation method. Compared to the different thickness of the buffer layer, the OLEDs with the 1.0 nm buffer layer showed the maximum power efficiency. The enhancements in power efficiency result from an improved balance of hole and electron injections. After comparing among different density buffer layer, PBD are good candidates for hole-injecting buffer layer, and 1.0 nm PBD buffer layer shows better operational durability and life.     

High quantum efficiency and color stability in white phosphorescent organic light-emitting diodes using carboline derivative as a host material

Highly efficient and color stable phosphorescent white organic light-emitting diodes were developed using a high triplet energy host material, 3,3′-bis(9H-pyrido[2,3-b]indol-9-yl)-1,1′-biphenyl (CbBPCb), derived from carboline. Two color phosphorescent white organic light-emitting diodes were fabricated by co-doping of blue and orange triplet emitters or double emitting layer structure of blue and orange emitting layers. High quantum efficiency above 20% and color stability were achieved in the white device by optimizing the doping concentration and emitting layer thickness.     

High-brightness blue organic light emitting diodes with different types of guest-host systems

We demonstrate high-brightness blue organic light emitting diodes (OLEDs) using two types of guest-host systems. A series of blue OLEDs were fabricated using three organic emitters of dibenz anthracene (perylene), di(4-fluorophenyl) amino-di (styryl) biphenyl (DSB) and 4,4''-bis[2-(9-ethyl-3-carbazolyl)vinyl]biphenyl (BCzVBi) doped into two hosting materials of 4,4''-bis(9-carbazolyl) biphenyl (CBP) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) as blue emitting layers, respectively. We achieve three kinds of devices with colors of deep-blue, pure-blue and sky-blue with the Commission Internationale de L''Eclairage (CIE) coordinates of (0.16, 0.10), (0.15, 0.15) and (0.17, 0.24), respectively, by employing PBD as host material. In addition, we present a microcavity device using the PBD guest-host system and achieve high-purity blue devices with narrowed spectrum.     

Novel Heterolayer Organic Light‐Emitting Diodes Based on a Conjugated Dendrimer

We demonstrate a novel organic light‐emitting diode (LED) heterolayer structure that contains a conjugated dendrimer as the light‐emitting molecule. The LED was prepared by spin‐coating two dendrimer layers from the same solvent. The device consists of a graded bilayer structure formed from a neat dendrimer film covered with a film consisting of the same dendrimer but doped with the electron‐transporting material 2‐(4‐biphenylyl)‐5‐phenyl‐1,3,4‐oxadiazole (PBD). In this device, the heterojunction interface present in conventional bilayer organic light‐emitting diodes is eliminated, and is replaced by a graded interlayer. By optimizing the concentration of PBD in the dendrimer, a peak electroluminescence (EL) external quantum efficiency of 0.16 % at 600 cd m^–2 was obtained. The EL quantum efficiency is significantly enhanced in comparison with devices based on a single layer, a conventional bilayer, and a single‐layer doped with PBD. The EL quantum efficiency is a factor of eight larger than that of a conventional bilayer LED made with the conjugated dendrimer as the emissive layer and poly(methylmethacrylate) (PMMA) doped with PBD as the electron‐transporting layer. The best blended device exhibited only one third of the efficiency of the graded device. The improvement in the operating characteristics of the graded device is attributed to the efficient device structure, in which exciton formation is improved by a graded doping profile of electron‐ and hole‐transporting components.     

High efficiency pure white organic light-emitting diodes using a diphenylaminofluorene-based blue fluorescent material

High efficiency pure white organic light-emitting diodes (WOLEDs) were developed using a highly efficient diphenylaminofluorene-based deep blue fluorescent material (DAF). A high quantum efficiency of 7.1% with color coordinates of (0.15, 0.18) were obtained from the DAF-doped blue device, which was then combined with phosphorescent red/green devices. A mixed interlayer was used to control the color coordinates and charge balance in the emitting layer of the WOLEDs. The pure white hybrid WOLEDs showed a high quantum efficiency of 12.3%.     

Study on luminescence characteristics of blue OLED with phosphor-doped host-guest structure

In this study, we design and fabricate phosphor-doped host-guest structure organic light-emitting diodes (OLEDs), where the blue-ray iridium complex electrophosphorescent material FIrpic acts as object material. Properties of the device can be accommodated by changing the host materials, dopant concentration and thickness of the light-emitting layer. The study shows that the host material N,N'-dicarbazolyl-3,5-benzene (mCP) has a higher triplet excited state energy level, which can effectively prevent FIrpic triplet excited state energy backtracking to host material, thus the luminous efficiency is improved. When mCP is selected as the host material, the thickness of the light-emitting layer is 30 nm and the dopant concentration is 8 wt%, the excitons can be effectively confined in the light-emitting region. As a result, the maximum current efficiency and the maximum brightness of the blue device can reach 15.5 cd/A and 7 196.3 cd/m², respectively.     

有机电致发光器件中复合发光区域的移动

采用在OLED有机层中夹入与主发光材料不同的发光材料薄层标记发光区域，介绍了复合发光区域位置随电压变化而移动的现象。在以Alq为发光材料的单层器件中夹入0．5nm厚的红光材料DCJTB层，或在两个位置分别夹入0．5nm厚的橙光材料QA层和红光材料DCJTB层，研究分析了电压升高时发光颜色的变化。结果表明，复合发光区域位置随电压升高由阳极一侧有机层向阴极方向移动；在有空穴阻挡层BCP层的器件中。在电子传输层与BCP层之间夹入10nm厚的DCJTB掺杂发光层，研究了不同电压时器件的发光颜色，发光区域位置在较低的电压范围内被BCP层限定，但发光区域在驱动电压很高时可越过BCP层进入电子传输层。     

High efficiency fluorescent white organic light-emitting diodes having a yellow fluorescent emitter sensitized by a blue thermally activated delayed fluorescent emitter

Fluorescent white organic light-emitting diodes having a blue thermally activated delayed fluorescent emitter and a yellow fluorescent emitter was developed by co-doping the blue and yellow emitters in a single emitting layer. The blue delayed fluorescent device showed high quantum efficiency of 22.6% at a very high doping concentration of 50% and the white devices exhibited a high quantum efficiency of 15.5% even though a fluorescent yellow emitter was doped in the blue thermally activated delayed fluorescent emitting layer. Minimized charge trapping and Dexter energy transfer by low yellow doping concentration of 0.05% as well as efficient Förster energy transfer could develop the high efficiency fluorescent white organic light-emitting diodes.