Microstructure and properties of mullite–ZrO2 ceramics with silicon nitride additive prepared by spark plasma sintering

The process of densification and development of the microstructure of mullite–ZrO₂/Y₂O₃ ceramics from mixture of Al₂O₃, SiO₂, ZrO₂ and Y₂O₃ by gradually adding of α–β Si₃N₄ nanopowder from 1 to 5 wt% by traditional and spark plasma sintering were investigated by means of differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and some ceramic and mechanical properties. The processes of DTA for all samples are characterised by a low-pitched endo-effect, when gradual mullite formation and noticeable densification at temperatures of 1200–1400 °C is started. It is testified by shrinkage and density both for traditionally and by SPS-sintered samples. The influence of the Si₃N₄ additive on the density characteristics is insignificant for both sintering cases. For SPS samples, the density reaches up to 3.33 g/cm³, while for traditionally sintered samples, the value is 2.55 g/cm³, and the compressive strength for SPS grows with Si₃N₄ additives, reaching 600 N/mm². In the case of traditional sintering, it decreases to approximately 100 N/mm². The basic microstructure of ceramic samples sintered in a traditional way and by SPS is created from mullite (or pseudo-mullite) crystalline formations with the incorporation of ZrO₂ grains. The microstructure of ceramic samples sintered by SPS shows that mullite crystals are very densely arranged and they do not have the characteristic prismatic shape. The traditional sintering process causes the creation of voids in the microstructure, which, with an increasing amount of Si₃N₄ additive, are filled with mullite crystalline formations.     

Sintering behavior of ZrB2–SiC composites doped with Si3N4: A fractographical approach

ZrB₂–SiC composite ceramics were doped with 0, 1, 3 and 5 wt% Si₃N₄ plus 1.6 wt% carbon (pyrolized phenolic resin) as sintering aids and fabricated by hot pressing process under a relatively low pressure of 10 MPa at 1900 °C for 2 h. For a comparative study, similar ceramic compositions were also prepared by pressureless sintering route in the same processing conditions, with no applied external pressure. The effect of silicon nitride dopant on the microstructural evolution and sintering process of such ceramic composites was investigated by a fractographical approach as well as a thermodynamical analysis. The relative density increased by the addition of Si₃N₄ in hot pressed samples as a fully dense composite was achieved by adding 5 wt% silicon nitride. A reverse trend was observed in pressureless sintered composites and the relative density values decreased by further addition of Si₃N₄, due to the formation of gaseous products which resulted in the entrapment of more porosities in the final structure. The formation of ZrC phases in pressureless sintered samples and layered BN structures in hot pressed ceramics was detected by HRXRD method and discussed by fractographical SEM-EDS as well as thermodynamical analyses.     

The preparation of silicon nitride ceramics by gelcasting and pressureless sintering

A new gelling system based on the polymerization of hydantion epoxy resin and 3,3′-Diaminodipropylamine (DPTA) was successfully developed for fabricating silicon nitride (Si₃N₄) ceramics. The effects of pH value, the dispersant content, solid volume fraction and hydantion epoxy resin amount on the rheological properties of the Si₃N₄ slurries were investigated. The relative density of green body obtained from the solid loading of 52 vol% Si₃N₄ slurry reached up to 62.7%. As the concentration of hydantion epoxy resin increased from 5 wt% to 20 wt%, the flexural strength of Si₃N₄ green body enhanced from 5.3 MPa to 31.6 MPa. After pressureless sintering at 1780 °C for 80 min, the sintered samples exhibited the unique interlocking microstructure of elongated β-Si₃N₄ grains, which was beneficial to improve the mechanical properties of Si₃N₄ ceramics. The relative density, flexural strength and fracture toughness of Si₃N₄ ceramics reached 97.8%, 687 MPa and 6.5 MPa m^1/2, respectively.     

Effect of seeding on the thermal conductivity of self-reinforced silicon nitride

Thermal conductivity of Si₃N₄ containing large β-Si₃N₄ particles as seeds for grain growth was investigated. Seeds addition promotes growth of β-Si₃N₄ grains during sintering to develop the duplex microstructure. The thermal conductivity of the material sintered at 1900 °C improved up to 106 W m⁻¹ K⁻¹, although that of unseeded material was 77 Wm⁻¹ K⁻¹. Seeds addition leads to reduction of the sintering temperature with developing the duplex microstructure and with improving the thermal conductivity, which benefits in terms of production cost of Si₃N₄ ceramics with thermal conductivity. ©     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Physical,thermal and ablative performance of CVI densified urethane-mimetic SiC preforms containing in situ grown Si3N4 whiskers

A two-step process has been developed for silicon carbide (SiC) coated polyurethane mimetic SiC preform containing silicon nitride (Si₃N₄) whiskers. SiC/Si₃N₄ preforms were prepared by pyrolysis/siliconization treatment at 1600 °C, of powder compacts containing rigid polyurethane, novolac and Si, forming a porous body with in situ grown Si₃N₄ whiskers. The properties were controlled by varying Si/C mole ratios such as 1–2.5. After densification using a chemical vapour infiltration, the resulting SiC/Si₃N₄/SiC composites showed excellent oxidation resistance, thermal conductivity of 4.32–6.62 Wm⁻¹ K⁻¹, ablation rate of 2.38 × 10⁻³ − 3.24 × 10⁻³ g cm⁻² s and a flexural strength 43.12–55.33 MPa for a final density of 1.39–1.62 gcm⁻³. The presence of a Si₃N₄ phase reduced the thermal expansion mismatch resulting in relatively small cracks and well-bonded layers even after ablation testing. This innovative two-step processing can provide opportunities for expanded design for using SiC/Si₃N₄/SiC composites being lightweight, inexpensive, homogeneous and isotropic for various high temperature applications.     

Structure–property relations of ferroelectric BaTiO3 ceramics containing nano-sized Si3N4 particulates

Barium titanate/silicon nitride (BaTiO₃/xSi₃N₄) powder (when x = 0, 0.1, 0.5, 1 and 3 wt%) were prepared by solid-state mixed-oxide method and sintered at 1400 °C for 2 h. X-ray diffraction result suggested that tetragonality (c/a) of the BaTiO₃/xSi₃N₄ ceramics increased with increasing content of Si₃N₄. Density and grain size of BaTiO₃/xSi₃N₄ ceramic were found to increase for small addition (i.e. 0.1 and 0.5 wt%) of Si₃N₄ mainly due to the presence of liquid phase during sintering. BaTiO₃ ceramics containing such amount of Si₃N₄ also showed improved dielectric and ferroelectric properties.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Characterization of porous silicon nitride ceramics by pressureless sintering using fly ash cenosphere as a pore-forming agent

A new method for fabricating porous silicon nitride ceramics has been developed by using fly ash cenosphere (FAC) with mean diameter of 87 μm as a pore-forming agent. Sintering was carried out at 1780 °C for 2 h under a nitrogen atmosphere. FAC can also act as a sintering aid besides a pore-forming agent. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that YSiO₂N forms instead of Y₂Si₃O₃N₄ when FAC is incorporated. Microstructural analysis revealed that large spherical cavities are scattered in a relative dense matrix. Porous Si₃N₄ ceramics with density of 2.17–2.30 g/cm³, Young’s modulus of 141–150 GPa and strength of 180–320 MPa were obtained by changing the FAC content.     

Effects of MgO addition on the microwave dielectric properties of high thermal-conductive silicon nitride ceramics sintered with ytterbia as sintering additives

1 mol% of MgO was added together with 7 mol% of Yb₂O₃ as sintering additives to silicon nitride powder to fabricate advanced silicon nitride ceramics with both high thermal conductivity and low dielectric loss at 2 GHz. The mixed powder was CIPed at a pressure of 120 MPa and was gas-pressure sintered at 1900 °C to >98% of theoretical density. The sintered Si₃N₄ sample exhibited a high thermal conductivity of ～100 W m^?1 K^?1 and a loss tangent (tan δ) of ～4 × 10^?4, concurrently. The tan δ was further reduced by half after the heat treatment at 1300 °C for 24 h. The improvement in tan δ due to the annealing was explained from the point of crystallization of the intergranular glassy phase.     

Microstructure and mechanical properties of tantalum carbide ceramics: Effects of Si3N4 as sintering aid

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si₃N₄ as sintering aid. Effects of the Si₃N₄ addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si₃N₄ reacted with TaC and tantalum oxides such as Ta₂O₅ to form a small concentration of tantalum silicides, SiC and SiO₂, with significant decrease in oxygen content in the consolidated TaC ceramics. Dense TaC ceramics having relative densities >97% could be obtained at 0.667% Si₃N₄ addition and above. Average grain size in the consolidated TaC ceramics decreased from 11 µm at 0.333 mol% Si₃N₄ to 4 µm at 2.50 mol% Si₃N₄ addition. The Young's modulus, Vickers hardness and flexural strength at room temperature of the TaC ceramic with 2.50 mol% Si₃N₄ addition was 508 GPa, 15.5 GPa and 605 MPa, respectively. A slight decrease in bending strength was observed at 1200 °C due to oxidation of the samples.     

A strategy for fabricating textured silicon nitride with enhanced thermal conductivity

C-axis textured Si₃N₄ with a high thermal conductivity of 176 W m⁻¹ K⁻¹ along the grain alignment direction was fabricated by slip casting raw α-Si₃N₄ powder seeded with near-equiaxed β-Si₃N₄ particles and Y₂O₃–MgSiN₂ as sintering additives in a rotating strong magnetic field of 12 T, followed by gas pressure sintering at 1900 °C for 12 h at a nitrogen pressure of 1 MPa. The green material reached a relative density of 57%, with slip casting and the sintered material exhibited a relative density of 99% and a Lotgering orientation factor of 0.98. The morphology of the β-Si₃N₄ seeds had little effect on the texture development and thermal anisotropy of textured Si₃N₄. The technique developed provides highly conductive Si₃N₄ with conductivity to the thickness direction, which is a major advantage in practical use. The technique is also simple, inexpensive and effective for producing textured Si₃N₄ with high thermal conductivity of over 170 W m⁻¹ K⁻¹.     

Reclamation of used SiC grinding powder and its sintering characteristics

A process of recycling used abrasive SiC powder after grinding Si wafer was proposed to raw powder for sintering. The used SiC powder could be successfully converted to composite powders consisting of SiC particle and Si₃N₄ whisker via a heat treatment in N₂ atmosphere, in which iron oxide acted as a catalyst in the vapor–liquid–solid (VLS) formation of Si₃N₄. With the addition of 3 mass% Al₂O₃ and 1 mass% Y₂O₃, the composite powders sintered at 1900 °C for 2 h exhibited a 3-point bending strength of 626 ± 48 MPa and a fracture toughness of 3.9 ± 0.1 MPa m^1/2, which were significantly enhanced as compared with those of using recovered powder merely composed of SiC particle. The strength and fracture toughness of the sintered material could be improved by optimization of chemical and heat treatment parameters and controlling the amount of sintering additives and hot pressing conditions.     

Electrical characterization of La9.33Si2Ge4O26 oxyapatite for prospective intermediate-temperature solid oxide fuel cells

La_9.33Si₂Ge₄O₂₆ materials have been fabricated from La₂O₃, SiO₂ and GeO₂ powders by high speed mechanical alloying followed by conventional and microwave hybrid sintering at different temperatures and holding times. XRD data showed that the apatite phase is formed after 1 h of mechanical alloying at 850 rpm. This phase remained stable after conventional sintering in an electric furnace with density increasing as sintering temperatures and holding times were increased. However, the highest density was achieved for samples sintered in the microwave furnace (5.44 g cm⁻³), corresponding to a relative density of 98%. The electrical conductivity of the samples microwave sintered at 700 and 800 ºC are 4.72×10⁻³ and 1.93×10⁻² S.cm⁻¹, respectively, with a correspondent activation energy of 0.952 eV.     

Sintered silicon nitride/nano-silicon carbide materials based on preceramic polymers and ceramic powder

A flexible method is presented, which enables the fabrication of porous as well as dense Si₃N₄/nano-SiC components by using Si₃N₄ powder and a preceramic polymer (polycarbosilazane) as alternative ceramic forming binder. The SiCN polymer benefits consolidation as well as shaping of the green body and partially fills the interstices between the Si₃N₄ particles. Cross-linking of the precursor at 300 °C increases the mechanical stability of the green bodies and facilitates near net shape machining. At first, pyrolysis leads to porous ceramic bodies. Finally, subsequent gas pressure sintering results in dense Si₃N₄/nano-SiC ceramics. Due to the high ceramic yield of the polycarbosilazane binder, the shrinkage during sintering is significantly reduced from 20 to 15 lin.%. Investigations of the sintered ceramics reveal, that the microstructure of the Si₃N₄ ceramic contains approx. 6 vol.% nano-scaled SiC segregations, which are located both at the grain boundaries and as inclusions in the Si₃N₄ grains.     

Correlation of wear behavior and indentation fracture resistance in silicon nitride ceramics hot-pressed with alumina and yttria

Nine kinds of silicon nitrides with different microstructures were fabricated by controlling both sintering conditions and amounts of sintering additives, Al₂O₃ and Y₂O₃. The wear behavior of the various Si₃N₄ ceramics was investigated in sliding contact test without lubricant. The specific wear rate varied notably from 6 × 10^?6 to 4 × 10^?4 mm³ N^?1 m^?1 depending on the microstructures, whose ranking was difficult to predict directly from the hardness or fracture resistance obtained by the indentation fracture (IF) technique as well as the single-edge-precracked beam (SEPB) method. A good correlation was obtained between the specific wear rate and both mechanical properties when a lateral-crack chipping model was applied as the material removal process. However, the correlation was lost when the fracture toughness obtained by the SEPB method was employed, indicating that the conventional long-crack toughness is inappropriate for analyzing the wear behavior of Si₃N₄ exhibiting a rising R-curve behavior.     

Improvement of electrical conductivity of silicon nitride/carbon nano-fibers composite using magnesium silicon nitride and ytterbium oxide as sintering additives

In order to find out the influence of sintering additives on the electrical conductivity of Si₃N₄-based ceramics composites with dispersed carbon nano-fibers (CNFs) two different mixtures of sintering additives were tested – Al₂O₃/Yb₂O₃ and MgSiN₂/Yb₂O₃, respectively. Optimization of hot-pressing conditions was performed for each mixture. The results show that the electrical conductivity can be effectively increased up to 1315 S/m by replacement of traditional sintering aid – alumina, with magnesium silicon nitride, while the mechanical properties remained on the same level. Other advantages of using MgSiN₂ instead of alumina are the preservation of higher amounts of CNFs in the ceramic composite and lower densification temperature (1500 °C) compared to samples sintered with alumina-based sintering aids (1550 °C).     

Fabrication and mechanical properties of boron nitride nanotube reinforced silicon nitride ceramics

In this study, silicon nitride (Si₃N₄) ceramics added with and without boron nitride nanotubes (BNNTs) were fabricated by hot-pressing method. The influence of sintering temperature and BNNTs content on the microstructures and mechanical properties of Si₃N₄ ceramics were investigated. It was found that both flexural strength and fracture toughness of Si₃N₄ were improved when sintering temperature increases. Moreover, α-Si₃N₄ phase could transform into β-Si₃N₄ phase completely when sintering temperature rises to 1800 °C and above. BNNTs can enhance the fracture toughness of Si₃N₄ dramatically, which increases from 7.2 MPa m^1/2 (no BNNTs) to 10.4 MPa m^1/2 (0.8 wt% BNNTs). However, excessive addition of BNNTs would reduce the fracture toughness of Si₃N₄. Meanwhile, the flexural strength and relative density of Si₃N₄ decreased slightly when BNNTs were added. The related toughening mechanism was also discussed.     

Mechanical properties and microstructure of porous BN–SiO2–Si3N4 composite ceramics

Porous silicon nitride (Si₃N₄) ceramics incorporated with hexagonal boron nitride (h-BN) and silica (SiO₂) nanoparticles were fabricated by pressureless-sintering at relatively low temperature, in which stearic acid was used as pore-making agent. Bending strength at room and high temperatures, thermal shock resistance, fracture toughness, elastic modulus, porosity and microstructure were investigated in detail. The mechanical properties and thermal shock resistance behavior of porous Si₃N₄ ceramics were greatly influenced by incorporation of BN and SiO₂ nanoparticles. Porous BN–SiO₂–Si₃N₄ composites were successfully obtained with good critical thermal shock temperature of 800 °C, high bending strength (130 MPa at room temperature and 60 MPa at 1000 °C) and high porosity.     

Effect of the Y2O3 additive concentration on the properties of a silicon nitride ceramic substrate

Silicon nitride (Si₃N₄) ceramics offer excellent thermal, mechanical and dielectric properties, which make Si₃N₄ a good candidate material for an application as electronic packaging material. For an application as a heat dissipation substrate, most studies focused on achieving a high thermal conductivity through long-time heat preservation and different kinds of heat treatments. Very few studies also considered the mechanical and dielectric properties. In addition, there have not been systematic researches about influence of additives concentration and type on the combination properties of Si₃N₄. Therefore, in this study, Si₃N₄ ceramic samples were prepared via hot pressing at 1800 °C with a relatively short heat preservation step (2 h), with different amounts of Y₂O₃ added as sintering additive. The effect of the initial concentration of the rare earth oxide on the chemical composition, microstructure, thermal conductivity, as well as the mechanical and dielectric properties of the Si₃N₄ ceramic samples was systematically studied.