C 波段小型化高精度驱动延时组件的研制

介绍了延时线在雷达中的工作原理,分析了延迟时间误差与延迟幅度误差对信号合成的影响。针对驱动延时组件小型化、高精度设计的难点进行了评估,并提出采用微波多层印制电路实现小型化、采用新型调相电路与衰减电路解决延时高精度的设计方案。在此基础上,设计并实现了一种集成延时、放大与功率分配/合成功能的驱动延时组件。根据驱动延时组件各态收发指标测试结果,幅度带内平坦度优于±0.4 d B,延时相位精度≤±5°,延时幅度精度≤±0.5 d B。     

基于微印多层技术的小型化功分网络设计

论述了基于微波多层印刷技术的小型化功分网络设计。微波多层印刷技术是一种较新的工艺技术,该技术能兼顾微波电路性能和小型化设计。本文以一分八小型化功分网络设计为例,介绍其仿真设计方法,并给出实测结果。该功分网络在4层微波板基础上,设计实现一分八功分器,在大大缩小电路体积基础上,获得良好的微波性能。     

毫米波多功能和差网络设计

设计了一种高集成多功能有源和差网络。该和差网络工作在Ka频段,内部集成了无源和差器、功分器、有源收发组件、开关矩阵、控制电路等多个功能单元,采用小型化、高集成设计方法,大大减少了整个系统的质量和体积。实验结果表明,在中心频点3 GHz带宽内,该和差网络实现了良好的端口匹配,小型化的设计没有影响射频性能。     

小型化滤波放大器三维集成设计

针对滤波放大器中滤波器体积大、数量多的特点，提出了一种基于三维集成技术的小型化设计方法。该方法利用球栅阵列连接，实现多个基板的三维集成互联组装。将放大电路置于下层基板，滤波器置于中间层基板，上层基板作为滤波器的屏蔽层，通过焊球实现信号互通和电磁屏蔽隔离。该设计可缩小多个滤波器级联时电路布局尺寸，为实现高集成、小型化、多功能的滤波放大器产品提供了有效的解决方案。     

基于叠层SIW滤波器的高集成硅基毫米波收发前端

提出了一种基于硅基晶圆级封装技术的小型化Ka频段收发前端,实现了接收通道、发射通道与本振产生电路的一体集成。该收发前端采用嵌入叠层型基片集成波导(SIW)滤波器结构实现高选择性预选滤波与低损耗垂直互连过渡的一体化设计。测试结果表明,该Ka频段滤波器中心损耗1 dB,1 dB带宽4.02 GHz,中心频偏5 GHz处抑制度优于35 dB,仿真与测试结果吻合良好。在前端模组设计中,通过采用硅基微腔屏蔽实现紧凑尺寸下各功能单元的隔离,通过采用1/4波长短路传输线结构抑制电源、控制等低频信号对接收中频的干扰,最终实现了该毫米波收发前端的小型化集成,其尺寸仅为20 mm×20 mm×1.25 mm,主要电性能满足设计要求。     

一种X波段小型化上下变频组件的研制

为了研制一种x波段小型化上下变频组件,通过方案优化、关键指标分析与计算、器材选择、关键部件（滤波器）的小型化实现等方法进行设计,并采用微波混合集成工艺进行电路布局;实测结果表明,组件指标符合性较好、满足系统要求;具有体积小、集成度高、功耗小、收发隔离度高、杂散抑制好的特点,对于研制该类型的上下变频组件具有一定的参考价值。     

一种应用收发一体功分器设计收发馈电网络的方法

为了实现高密度的天线集成,通常会将多个天线单元紧密排列,因此需要设计连接各个单元的收发馈电网络。应用收发一体功分器级联成收发馈电网络,收发一体功分器在设计时就采用多层结构,并考虑网络层叠的影响,可以确保发射和接收互不干扰。此外,采用通孔结构,并将电阻置于底部可以降低加工难度和成本。应用该方法设计了一种收发一体双8路的馈电网络,在工作频带内,测试的反射系数小于-22 dB,隔离度高于61 dB,各个通道间的幅度一致性小于0.2 dB,相位一致性小于2.3°。该方法可缩短设计周期,提高研发效率,而且设计的馈电网络具有高隔离和低成本等优点,可用于平板阵列天线中。     

X波段氮化镓小型化T/R组件的设计与实现

针对高功率T/R组件的小型化问题,提出了一种X波段氮化镓(Ga N)小型化T/R组件的设计与实现方法。在小型化尺寸内实现了4个收发通道,内部包含了318个元器件。对组件复杂功能及由此带来的工艺装配问题和热问题进行了阐述与分析。研制出了采用多功能芯片技术、多层复合基板技术和多芯片组装(MCM)技术的组件,内部高度集成,实现了小型化。测试结果表明,组件尺寸为65 mm×60 mm×8.5 mm,发射输出功率≥30 W,实现了小型化和良好的电气性能。     

一种UHF频段无线数据传输系统接入点的射频前端

介绍了UHF(特高频)频段无线数据传输系统中接入点的一种射频前端。该前端包括调制器、上变频器、功率放大器、低噪声放大器、下变频器、解调器、频率合成器、增益控制和收发切换开关等电路。介绍了射频前端的实现方案以及关键部件的设计与测试。制作完成的射频前端集成在一块1 5 0mm×1 0 0mm的4层印制电路版上。该前端最大输出功率可达2W,接收灵敏度优于-100 dBm,收发切换时延小于1.5μs,满足系统指标要求。     

基于自振混频的下变频接收电路设计

文中设计了一种基于自振混频(SOM)电路的小型化、低成本下变频接收电路。自振混频电路是基于 辅助源电路进行仿真分析与设计,以单器件场效应管(FET)实现了变频接收电路中变频与本振两种功能的电路。设 计中还将不同种类的功能电路通过垂直压叠的方式实现层间互联,进一步提高了系统集成度。文中提出了基于自 振混频的功能电路集成和基于分离器件层间填埋的结构集成相结合的设计方法,最终在58 mm×20 mm×2. 9 mm 的 空间内实现了融天线为一体的小型化、低成本、低功耗的下变频接收通道,变频增益-4~-8 dB,整体功耗<0. 13 W。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.