氧化锌纳米棒形貌对ZnO/Cu2O异质结太阳能电池光伏性能的影响

采用电化学沉积法制备了ZnO纳米棒,首先讨论了电化学沉积参数对氧化锌(ZnO)纳米棒形貌的影响,并对不同长度ZnO纳米棒的光吸收和反射等性质进行了研究.实验发现沉积时间是影响纳米棒长度、直径的重要因素,ZnO纳米棒的微观形貌对其光学性质有重要影响.然后以氧化锌纳米棒为n型材料,以氧化亚铜为p型材料,通过电化学沉积法构筑了ZnO/Cu2O异质结太阳能电池,并测试了其光伏性能,研究表明增长纳米棒阵列的长度使得开路电压、短路电流密度及光电转换效率等性能得到提升.最后,综合分析了氧化锌纳米棒形貌与所组装电池的性能之间的关系,发现调控氧化锌纳米棒的形貌是提高ZnO/Cu2O异质结太阳能电池光伏性能的有效途径.     

Cu2ZnSnS4/Si异质结器件的制备及特性研究

利用脉冲激光沉积法在不同电阻率的n型Si(100)基片上沉积Cu2ZnSnS4薄膜,制备p-Cu2ZnSnS4/n-Si异质结.利用X射线衍射(XRD)、X射线能谱(EDS)和原子力显微镜(AFM)对Cu2ZnSnS4薄膜的结构、组分和形貌进行表征,并对器件进行I-V测试,讨论不同电阻率的Si对异质结器件光电特性的影响.结果表明,器件有良好的整流特性,Si电阻率大的器件光电响应比较好,而Si电阻率小的器件光伏效应比较明显.     

n-Cu_2O/p-Cu_2O纳米棒复合结构的制备与光电化学性能

采用热分解和电化学沉积相结合的方法,在p-Cu2O纳米棒上沉积n-Cu2O,制备了nCu2O/p-Cu2O纳米棒复合结构。通过X射线衍射分析(XRD)、扫描电镜分析(SEM)和Mott-Schottky(MS)测试研究了样品的结构、形貌以及导电类型,使用光电流密度测试考察了样品的光电化学性能,并根据电化学阻抗测试(EIS)进行了机理分析。结果表明:沉积n-Cu2O之后样品的载流子分离-转移能力大幅提升,因此n-Cu2O/p-Cu2O纳米棒复合结构表现出良好的光电化学性能。     

纳米TiO2修饰 Ni-W-P电极的制备及其光电催化析氢性能

在Cu基体上电沉积Ni-W-P合金后，通过溶胶-凝胶法制备了纳米TiO2修饰Ni-W-P合金电极．利用扫描电子显微镜（SEM）、X射线衍射（XRD）、阴极极化曲线测试了TiO2／Ni-W-P电极的表面形貌、结构及催化析氢性能，考察了烧结温度、TiO2膜层厚度对电极结构和性能的影响．实验结果表明：550℃下烧结1h、拉膜15次制备的TiO2／Ni-W-P电极光电催化析氢性能最佳，500W碘钨灯照射下析氢过电位减小约140mV；此时TiO2为锐态矿型和金红石型混晶结构，平均晶粒尺寸约7nm．     

Cu_2O敏化ZnO纳米棒的制备及其对光电性质的影响

以透明导电玻璃(FTO)为基底,采用电化学沉积法制备了Cu_2O敏化的ZnO纳米棒阵列复合薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)、高分辨电镜(HRTEM)、电化学工作站研究了不同Cu_2O沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响。结果表明,电化学沉积的Cu_2O纳米晶可以与ZnO纳米棒形成异质结,提高ZnO纳米薄膜的光电转换效率,当Cu_2O的沉积时间为5min时,Cu_2O敏化ZnO纳米棒薄膜的光电转换效率最高。     

Cu2O薄膜的制备与表征

以透明导电玻璃ITO和铜片为工作电极,用0.1mol/L乙酸铜和0.02mol/L乙酸钠的混合溶液作为电解液,通过两电极电化学沉积方法制备了Cu2O薄膜。讨论了pH值和沉积电位对Cu2O薄膜的影响,利用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对薄膜进行表征。结果表明,两电极电化学沉积法制备Cu2O薄膜最佳的pH值为5.7～5.9,沉积电位为1.1～1.3V。此外,分析了沉积电位对Cu2O薄膜形貌的影响。     

阳极氧化法制备TiO2纳米管阵列及其光电性能研究

采用阳极氧化法在钛片上制备了TiO2纳米管阵列光电极，利用扫描电子显微镜（SEM）和X射线衍射仪（xRD）对TiO2纳米管的形貌和结构进行了表征，详细考察了氧化工艺参数对纳米管阵列形貌的影响，并通过稳态光电响应技术对TiO2纳米管电极的光电化学性能进行了研究．结果表明，在1wt％HF电解液中，控制氧化电压为20V，反应30min后，在Ti表面获得了垂直导向的TiO2纳米管阵列，孔径约为90nm，管壁厚度约为10nm．经600℃退火处理后，TiO2纳米管阵列为锐钛矿型与金红石型的混晶结构，此时电极的光电性能最佳，与TiO2纳米多孔膜电极相比，光电性能大幅提高．     

聚3-甲基噻吩修饰量子点硫化镉连接纳米结构TiO2复合膜电极光电化学研究

采用原位化学法在纳米结构TiO2电极上制备了量子点CdS(Q-CdS),并用电化学方法在TiO2/QCdS表面聚合3-甲基噻吩po1y(3-Methylthiophene)(PMeT).通过对PMeT修饰Q-CdS连接TiO2纳米结构膜的研究表明,PMeT和Q-CdS单独修饰纳米结构TiO2电极和PMeT修饰Q-CdS连接纳米结构TiO2电极的光电流产生的起始波长都向长波方向移动;一定条件下在可见光区光电转换效率均较纳米结构TiO2的光电转换效率有明显的提高;聚3-甲基噻吩(PMeT)与Q-CdS连接的纳米结构TiO2之间存在p-n异质结.在一定条件下p-n异质结的存在有利于光生电子/空穴的分离,提高了光电转换效率.     

CeO2-MoS2纳米异质结的构建及其光电性能的研究

以硝酸铈铵为铈源，硫代钼酸铵为硫源和钼源，通过水热法制备CeO₂纳米颗粒，再利用水热法合成了具有丰富氧空位的CeO₂-MoS₂纳米复合材料。通过TEM、XRD和Raman等表征方法，检测出CeO₂纳米颗粒成功负载于MoS₂纳米片上，且形成异质结结构。光电性能测试结果显示，CeO₂-MoS₂具有良好的光电稳定性；两种材料的复合与异质结的形成能有效抑制光生电子-空穴的复合，提高光电性能。对不同种类活性氧的测试表明，与nCeO₂和nMoS₂相比，CeO₂-MoS₂在三种光源(紫外、可见、近红外光)照射下均产生了单线态氧、过氧化氢和超氧阴离子。本研究可为CeO₂-MoS₂在光催化和抗菌等领域的应用提供参考。     

P3HT及CTCHT修饰纳米TiO2的光电性能研究

用光电流作用谱、光电流-电势图等光电化学方法研究了聚3-己基噻吩(P3HT)及3-己基噻吩和2-噻吩甲酸共聚物(CTCHT)修饰纳米结构TiO2电极的光电转换性质。结果表明,经修饰后的纳米TiO2电极光电流明显增强,光电转换效率得到明显提高。在复合膜电极中存在p-n异质结,异质结的存在有利于光生电子-空穴对的分离,降低了电荷的反向复合几率,提高了光电转换效率。     

Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator

Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO₂/Ta₂O₅/SiO₂ (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1 × 10⁻⁷ A at a V_GS of −15 V was obtained due to the strong coupling capability provided by the STS multilayer gate insulator. The device shows a moderate performance: saturation mobility of μ_sat = 6.12 × 10⁻⁴ cm²/V s, on-current to off-current ratio of I_on/I_off = 1.1 × 10³, threshold voltage of V_TH = −3.2 V and sub-threshold swing SS = 1.6 V/dec. Atomic force microscope images show that the STS multilayer has a relative smooth surface. Experiment results indicate that STS multilayer is a promising insulator for the low drive voltage CuPc-based TFTs.     

LiCl/SiO2-Al2O3薄膜的纳米结构和湿敏特性

通过溶胶－凝胶工艺制得具有良好湿敏特性的ＬｉＣｌ／ＳｉＯ２－Ａｌ２Ｏ３薄膜材料,利用ＸＲＤ和ＡＦＭ对这类薄膜进行了结构表征,结果表明,具有纳米分相结构的薄膜在全湿范围内阻抗值的变化〉３个数量级,阻抗的对数值与相对湿度的关系具有较好的线性度,吸湿响应〈３０ｓ,脱湿响应〈６０ｓ。     

High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric

A high-performance ZnO thin film transistor （ZnO-TFT） with SiO₂/Ta₂O₅/SiO₂ (STS) multilayer gate insulator is fabricated by sputtering at room temperature. Compared to ZnO-TFTs with sputtering SiO₂ gate insulator, its electrical characteristics are significantly improved, such as the field effect mobility enhanced from 11.2 to 52.4 cm²/V s, threshold voltage decreased from 4.2 to 2 V, and sub-threshold swing improved from 0.61 to 0.28 V/dec. The improvements are attributed to the high gate capacitance (from 50 to 150 nF/cm²) as well as nice surface morphology by using dielectric with high～k Ta₂O₅ sandwiched by SiO₂ layers. The capacitance-voltage characteristic of a metal-insulator-semiconductor capacitor with the structure of Indium Tin Oxide/STS/ZnO/Al was investigated and the trap charges at the interface or bulk is evaluated to be 2.24 × 10¹² cm⁻². From the slope of C⁻² versus gate voltage, the doping density N_D of ZnO is estimated to be 1.49 × 10¹⁶ cm⁻³.     

Preparation and properties of Tl2Ba2CaCu2O8 thin films

Anex situ process has been developed to produce thin superconducting Tl₂Ba₂CaCu₂O₈ films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO₃, LaAlO₃, and Y-ZrO₂ substrates. A critical current density,J _c, of 2×10⁶ A/cm² at 77 K was measured on LaAlO₃. Film morphology was studied by SEM, AFM, and STM.     

La/TiO2-SiO2薄膜的光催化性能研究

采用溶胶-凝胶法制备了不同掺杂量的La／TiO2-SiO2复合薄膜．通过XRD、FE-SEM和AFM研究了复合薄膜的微观结构，采用紫外光照射下亚甲基蓝的分解实验比较薄膜的光催化性能．结果表明：La掺杂可显著提高TiO2-SiO2复合薄膜的光催化活性，以5％掺杂量为最佳，其光降解率比掺杂前提高了约23％．薄膜活性提高的主要原因是La掺杂后细化了TiO2的晶粒，提高了薄膜的比表面积，使其具有更高的氧化还原电势，La^3＋取代Ti^4＋进入到TiO2晶格，引起晶格膨胀，这种不同价离子的取代导致TiO2粒子表面电荷分布不平衡，从而提高了光生电子-空穴的分离效率．     

TiO2/SnO2复合薄膜的亲水性能研究

采用溶胶-凝胶法制备了TiO2／SnO2复合薄膜，通过XRD、XPS、UV透射光谱的分析及薄膜表面接触角、光催化降解甲基橙等的分析，研究了SnO2与TiO2配比、热处理温度、膜厚度等因素对复合膜的亲水性、透光率及光催化活性的影响。结果表明：复合膜的亲水性和光催化活性均优于单纯TiO2，当SnO2与TiO2的摩尔比为1％-5％时，所制备的薄膜具有超亲水特性；热处理温度为450℃时薄膜亲水性最好，膜厚度的增加有利于亲水性的改善。     

All-chemically deposited Bi2S3/PbS solar cells

We report on solar cells with a cross-sectional layout: TCO/window/Bi₂S₃/PbS, in which a commercial SnO₂ transparent conductive oxide (TCO-PPG Sungate 500); chemically deposited window layers of CdS, ZnS or their oxides; n-type Bi₂S₃ (100 nm) and p-type PbS (360-550 nm) absorber films constitute the cell structures. The crystalline structure, optical, and electrical properties of the constituent films are presented. The open circuit voltage (V_oc) and short-circuit current density (J_sc), for 1000 W/m² solar radiation, of these solar cells depend on the window layers, and vary in the range, 130-310 mV and 0.5-5 mA/cm², respectively. The typical fill factors (FF) of these cells are 0.25-0.42, and conversion efficiency, 0.1-0.4%.     

Electrochemical behavior and multilayer films of the sandwich-type polyoxotungstate complex {K10Co4(H2O)2(PW9O34)2}

The electrochemical behavior of the sandwich-type polyoxotungstate complex of K₁₀Co₄(H₂O)₂(PW₉O₃₄)₂ (Co₄(PW₉)₂) was investigated by cyclic voltammetry in aqueous solutions. The polyoxoanion exhibits two successive redox peaks originating from the tungsten-oxo framework. The electrochemical behavior for the Co^II species was not detected. Moreover, the multilayer films consisting of PEI and Co₄(PW₉)₂ were prepared by the layer-by-layer self-assembly method. The films were characterized by UV–vis spectroscopy, cyclic voltammetry and atomic force image. The films exhibit the electrochemical behavior of Co₄(PW₉)₂ polyoxoanion. Moreover, the films can catalyze the electrochemical reduction of NO₂⁻. Electron transfer to Fe(CN)₆^3−/4− redox probe was also investigated.     

Transport Properties of K_xV_2O_5·nH_2O Nanocrystalline Films

Five different compositions of K x V 2 O 5 ·nH 2 O(where x=0.00,0.0017,0.0049,0.0064 and 0.0091 mol) were prepared by the sol-gel process.Electrical conductivity and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K.The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content.The conductivity of the present system was primarily determined by hopping carrier mobility.The carrier density was evaluated as well.The conduction was confirmed to obey non-adiabatic small polaron hopping.The thermoelectric power or Seebeck effect,increased with increasing K ions content.The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.     

TiO2/SiO2复合薄膜的晶化特征和结构转变研究

对TiO2／SiO2复合薄膜的晶化特征进行了分析，研究表明，随着TiO2含量的增加，其晶化温度降低，而由锐钛矿相完全转变为金红石相的速度减慢．SiO2的析晶温度也随着TiO2含量的增加而降低，即TiO2具有诱导SiO2析晶的作用．锐钛矿晶粒尺寸的增加幅度随着TiO2含量的降低和热处理温度的升高而增大．其晶粒尺寸的大小与热处理时间的平方根成正比．认为由于TiO2含量的不同，造成薄膜中由锐钛矿相完全转变成金红石相的速度差异主要来自于薄膜中应力的作用．