Pd在SnO2薄膜上的淀积、扩散及对气敏性能的影响

在Ａｒ气氛中于ＳｎＯ２薄膜表面溅射一层很薄的金属钯。用ＳＥＭ、ＡＥＳ及ＸＰＳ等分析表明，Ｐｄ在ＳｎＯ２表面以三维束状小岛方式生长，热处理后Ｐｄ迅速扩散到ＳｎＯ２膜内，形成掺杂型的气敏元件。在元件的表面存在大量的化学吸附氧，低温下（～１６０℃）对极为稳定的ＣＨ４有很高的灵敏度，认为可能与低温下吸附氧主要为α氧（Ｏ－２）有关。     

CdO／SnO2双层薄膜的气敏性能

以ＣｄＯ、ＳｎＯ＿２粉料作为靶，采用直流溅射方法制得ＣｄＯ、ＳｎＯ＿２双层薄膜元件，比较了ＣｄＯ／ＳｎＯ＿２与ＳｎＯ＿２／ＣｄＯ在性能方面的差异。认为ＣｄＯ／ＳｎＯ＿２的气敏性能较好，并初步探讨了工作温度和膜厚等因素对ＣｄＯ／ＳｎＯ＿２元件的电学性质及气敏特性的影响。     

SnO2气敏薄膜在SnO2／Fe2O3双层结构中成核及生长过程的模拟

用ＳＥＭ对ＳｎＯ２／Ｆｅ２Ｏ３样品的断面结构进行了观察研究，发现ＳｎＯ２是在Ｆｅ２Ｏ３柱状结构的间隙中开始生长的，据此提出了双层膜结构生长热力学模型，由模型推出的结论与实验结果吻合。计算结果表明，ＳｎＯ２在Ｆｅ２Ｏ３薄膜的间隙中生长速度很快，而后逐渐变慢，达到稳定沉积速率，在这种沉积速率下形成ＳｎＯ２的柱状结构。ＳｎＯ２膜的这种沉积方式使得Ｆｅ２Ｏ３与其接触面积很大，两者结合十分牢固。     

微结构气敏传感器敏感薄膜制备方法的研究

随着微结构气敏传感器的出现,金属氧化物半导体薄膜因具有灵敏度高、热质量小、批量制备一致性好等特点受到日益广泛的重视,本比较了在微结构气敏传感器中三种方法制备的ＳｎＯ２敏感薄膜的结构和气敏响应特性。结果表明,用液涎生长和热氧化技术制备Ｓｎ２薄膜虽然能采用Ｌｉｆｔ－ｏｆｆ技术成形,但由于膜中晶粒结构和Ｓｎ／Ｏ比不合适使得它的气敏响应特性很差;室温混合气氛（Ａｒ／Ｏ２比为８：２）下射频溅射ＳｎＯ２靶然     

氧化锡基ZnO／SnO2UPF复合工艺对其微观结构的影响

着重讨论了用直流气体放电活化反应蒸发沉积法制备的氧化锡基ＺｎＯ／ＳｎＯ２超微粒子薄膜（ＵＰＦ）的制备工艺对其物相结合及表面形貌等影响。结果表明：复合型薄膜上层的ＺｎＯＵＰＦ比单层薄膜的ＺｎＯＦＵＰＦ致密；主要晶相成分为ＳｎＯ２相，并沿（００２）、（１１０）、（１０１）等晶面择优生长；ＺｎＯ相呈非晶态结构。     

ZnO／SnO2,SnO2／ZnOUPF复合膜的制备及气敏特性研究

用直流气体放电活化反应蒸发沉积技术在普通玻璃基片上制备了ＺｎＯ／ＳｎＯ２及ＳｎＯ２／ＺｎＯ超微粒子（ＵＰＦ）双层复合薄膜。样品经扫描电子显微镜（ＳＥＭ）和Ｘ射线衍仪分析，结论为超微凿子的复合薄。同时提出了最佳制备工艺。气敏测试结果表明：ＺｎＯ／ＳｎＯ２及ＳｎＯ２／ＺｎＯ ＵＰＦ复合膜较单层ＺｎＯ及ＳｎＯ２ＵＰＦ表现出优良的选择性，其灵敏度和最佳工作温度也得到相应的改善。     

掺锡对α—Fe2O3薄膜微结构和气敏特性的影响研究

本文用常压化学气相淀积法（ＡＰＣＶＤ）制备了α－Ｆｅ２Ｏ３薄膜，对所制备的薄膜进行了Ｘ射线衍射分析和表面形貌（ＳＥＭ）分析。对薄膜的气敏特性进行了测量。结果表明，用ＡＰＣＶＤ工艺制备的α－Ｆｅ２Ｏ３薄膜对烟者极为敏感并且具有良好的选择性；本研究还对所制备的α－Ｆｅ２Ｏ３薄膜进行了有效的掺杂，对掺杂样品的气敏特性测试表明四价金属元素Ｓｎ的掺入对α－Ｆｅ２Ｏ３薄膜的气敏特性有显著的影响。实验表明用ＡＰ     

Sol—Gel法制备ZrO2—SnO2薄膜的常温气敏机理

根据Ｓｏｌ－Ｇｅｌ工艺制备的ＺｒＯ２－ＳｎＯ２薄膜的气敏性能数据，提出了常温下ＳｎＯ２（ＺｒＯ２）薄膜对Ｈ２Ｓ的气敏机理模型。根据此模型所得定量分析结果与实验结果一致。     

Sn—SnOx薄膜的组织结构及湿敏性

报道了一种制备Ｓｎ－ＳｎＯｘ湿敏薄膜的新工艺（ＶＥＴＯ）。首先在１ｍＰａ的真空下蒸发纯金属Ｓｎ质量分数９９９ｍｇ·ｇ＾－１，衬底温度控制在１５０￣２５０℃，蒸发的Ｓｎ膜在空气中缓慢氧化，即可获得湿度敏感的Ｓｎ－ＳｎＯｘ薄膜，利用ＸＲＤ和ＳＥＭ分析了膜的晶体结构和表面形貌，环境温度ＲＨ从１０％变到９７％时，膜阻抗变化的三个量级，膜电导是电子电导和离子电导的混合，在低湿区电子电导是主要的，在高湿区离子     

锑,锌,锡的氧化物对高分子物的阻燃效果

叙述了锑，锌，锡氧化物对聚氯乙烯和溴化聚酯的阻燃作用，并从热分解性能，限氧指数，发烟性，炭和一氧化碳的生成量等方面比较了阻燃效果，指出了可能的机制。指出ＳｎＯ２，ＺｎＳｎＯ３，ＺｎＳｎ（ＯＨ）６及Ｓｂ２Ｏ３与其它金属氧化物的混合物，与Ｓｂ２Ｏ３相比，有更好的阻燃性显著降低发烟性和一氧化碳生成的效果。     

Semiconductor/metal nanocomposites formed by in situ reduction method in multilayer thin films

A layer-by-layer adsorption and in situ reduction method was adopted for synthesizing semiconductor/metal nanocomposites in multilayer ultra-thin films. Alternate adsorption of ZnO nanoparticles modified with poly(ethyleneimine), hydrogentetrachloroaurate and poly(styrenesulfonate) sodium results in the formation of ZnO/AuCl₄⁻-loaded multilayer films. In situ reduction of the incorporated metal ions by heating yields ZnO/Au nanocomposites in the films. UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy were used to characterize the components of the composite films. UV-vis spectra indicate regular growth of the films. The electrochemistry behavior of the multilayer films was studied in detail on indium tin oxide electrode. The combined results suggest that the layer-by-layer adsorption and subsequent reduction method used here provides an effective way to synthesize ZnO/Au nanocomposites in the polymer matrix.     

Effects of rapid thermal annealing on the morphology and electrical properties of ZnO/In films

Zinc oxide (ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently subjected to rapid thermal annealing (RTA) in air or vacuum. The crystallographic properties and surface morphology of the films were characterized before and after RTA by X-ray diffraction and scanning electron microscopy, respectively. The variation in resistivity of the films with RTA temperature and time was measured by the four-point probe method. Auger electron spectroscopy (AES) was carried out to determine the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In (ZnO/In) films decreased to 2×10⁻³ Ω cm by diffusion of the In. Indium diffusion into the ZnO films roughened the film surface. The results of depth profiling by AES showed a hump of In atoms around ZnO/In interface after RTA at 800 °C, which disappeared on RTA at 1000 °C. The effects of temperature, time and atmosphere during RTA on the structural and electrical properties of the ZnO/In films are discussed.     

Structure and surface termination of ZnO films grown on (0001)- and (112¯0)-oriented Al2O3

We have studied the surface termination of ZnO(0001¯) films grown on Al₂O₃ substrates with high epitaxial quality. The structural properties of the ZnO films were investigated by X-ray scattering, revealing a predominant (0001¯)ZnO out-of-plane texture with the [112¯0]_ZnO[0001]_Al2O3 and [112¯0]_ZnO[101¯0]_Al2O3 azimuthal orientations for (112¯0)Al₂O₃ and(0001)Al₂O₃ substrates, respectively. The surface termination was determined by X-ray photoemission spectroscopy (XPS) via pyridine (C₅H₅N) adsorption at the ZnO surface. XPS data recorded at different temperatures after exposure to pyridine revealed that for both orientations of the Al₂O₃ substrates the deposited ZnO films were terminated by oxygen atoms, i.e. corresponding to a ZnO (0001¯) surface.     

Spectroscopic ellipsometry studies on various zinc oxide films deposited by ion beam sputtering at room temperature

Various zinc oxide films were deposited by ion-beam sputter deposition (IBSD) under different oxygen partial pressures (P(O2)) at room temperature. The as-deposited ZnO films fabricated at P(O2)>1.0×10(-4) Torr had poly-crystalline structures to absorb water on the surface at ambient condition. Simultaneously, the film surfaces were covered and smoothed by the surface layers formed with the water, hydroxyl (OH(-)) groups, and ZnO materials investigated by X-ray photoelectron spectroscopy (XPS). When the compositions of the surface layers were used in a multilayer fitting model of spectroscopic ellipsometry, the actual optical refractive index of the ZnO film deposited at P(O2)=1.2×10(-4) Torr was found to be about 1.9618 at λ=550 nm.     

Growth and characterisation of electrodeposited ZnO thin films

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 °C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between − 0.900 and − 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be ∼ 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was found to be 0.40 μm as measured using the Talysurf instrument, after deposition for 3 min. Environmental scanning electron microscopy was used to view the cross-section of glass/FTO/ZnO layers.     

ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O₂/Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O₂/Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O₂/Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm).     

层数变化对ZnO/In_2O_3多层膜微观结构及光电性能的影响

用直流磁控溅射和热氧化法在玻璃衬底上制备ZnO/In2O3透明导电多层膜,当总厚度一定时,调节溅射沉积的层数与相应各层膜的厚度,研究该多层膜微观结构、光学性能和电学性能的变化.XRD和SEM分析表明:随着溅射沉积层数的增加,In2O3衍射峰的强度不断地减弱,ZnO衍射峰出现了不同的晶面择优取向;多层膜表面的ZnO晶粒粒径变小,光洁度增加.四探针法方块电阻测试表明:低温热氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而上升;高温氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而下降.可见光光谱分析表明:随着溅射沉积层数的增加,ZnO/In2O3多薄膜在可见光区的平均透过率增大,透过率的峰值向短波方向偏移.     

SnO2-x薄膜非化学计量比对气敏性能的影响

采用反应磁控溅射法制备SnO2薄膜经常出现化学计量比的失衡问题。通过控制溅射过程中的氧分压制备不同化学计量比的SnO2-x薄膜,研究非化学计量比对薄膜结构、成分以及气敏性能的影响。XRD结果表明氧分压对材料结构和取向的影响非常显著。薄膜的O／Sn和表面化学成分通过XPS进行确定,分析发现氧分压的增加促使薄膜接近化学计量比,但表面化学吸附氧含量在0．33Pa氧分压下达到最大。气敏性能测试表明,非化学计量比主要影响薄膜表面的化学吸附氧数量,从而影响导电性和气体敏感性。氧分压对薄膜化学吸附氧的影响趋势与对气敏性能的影响趋势一致。0．33Pa氧分压下制备的薄膜拥有最多的表面吸附氧,同时对氢气的灵敏度高达45．6％。另外,在0．2～0．5Pa氧分压下制备的薄膜对氢气具有较好的选择性。     

锂二次电池SnO2-MCMB复合负极材料的研究

用直接沉淀法将氧化锡颗粒沉积在中间相碳微球(MCMB)核心上,制备了一种锂离子电池用的新型复合负极材料.用X射线衍射(XRD)和扫描电镜(SEM)对材料的结构及形貌进行了表征.通过恒流充放电、交流阻抗等测试手段对该材料的嵌脱锂特性进行了研究,循环20周后其比容量仍然保持在420mAh/g以上.电化学测试表明,此种复合物可以作为一种锂离子电池新型负极材料.     

Fabrication of ZnO submicrorod films with water repellency by surface etching and hydrophobic modification

Superhydrophobic ZnO submicrorod films have been fabricated on zinc sheets through an H₂O₂-assisted surface etching process and subsequent surface modification with a monolayer of 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FDS). The crystal structure, chemical compositions, morphologies, and wettability of the resultant ZnO films were analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and water contact angle measurements. It is found that the surface of the as-prepared ZnO films on zinc substrate was hydrophobic with a water contact angle of 95 ± 2°, whereas after modification with FDS, the film exhibited superhydrophobicity and the water CA increased to 154 ± 2°. It is shown that both the higher surface roughness and the lower surface free energy play an important role in creating the superhydrophobic films.