共查询到18条相似文献,搜索用时 140 毫秒
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对毫米波CMOS集成电路收发机前端技术进行了综述。介绍了毫米波CMOS集成电路收发机的研究背景,分别对毫米波CMOS集成电路收发机前端各个子模块进行了详细介绍和比较,并展望了毫米波CMOS集成电路的未来发展方向。 相似文献
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《固体电子学研究与进展》2016,(3)
对毫米波CMOS集成电路收发机前端技术进行了综述。介绍了毫米波CMOS集成电路收发机的研究背景,分别对毫米波CMOS集成电路收发机前端各个子模块进行了详细介绍和比较,并展望了毫米波CMOS集成电路的未来发展方向。 相似文献
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近年来,随着工艺的不断进步,硅基集成电路已突破了仅适用于数字电路和低频模拟电路的传统观念,迅速拓展到毫米波甚至亚毫米波频段.在未来10年内,硅基工艺将具备覆盖毫米波频段的能力,并在部分器件与系统上实现到亚毫米波频段或太赫兹的跨越.我国在该领域起步稍晚,但在国家重点基础研究发展计划("973"计划)、国家高技术研究发展计划("863"计划)和自然科学基金等的支持下,已快速开展研究并取得进展.文中概要介绍了国际上在硅基毫米波亚毫米波集成电路与系统方面的研究背景和我国特别是东南大学毫米波国家重点实验室在CMOS毫米波亚毫米波集成电路方面的最新研究进展. 相似文献
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随着微电子工艺技术的发展,硅基CMOS器件的截止频率已经达到毫米波频段,使硅基微波单片集成电路实现成为可能。因此,建立硅基毫米波频段共面波导结构模型使准确设计硅基微波单片集成电路成为必要。文章提出了一种基于神经网络技术的共面波导结构(CPW)毫米波可缩放模型,采用3层神经网络结构,根据共面波导的测试结果,用神经网络来学习其物理变量和测试的相应S参数空间映射关系。仿真与测试结果比较表明:基于神经网络方法建立的毫米波共面波导可缩放模型对不同几何参数CPW能够快速和准确地给出对应的CPW的S参数结果。 相似文献
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本文介绍RF(射频)CMOS集成电路的最新进展和应用.着重于深亚微米CMOS技术在实现高端射频(几十GHz频带)集成系统方面的潜能.首先,综述CMOS技术的主要特点,继而介绍CMOS射频集成电路的最新进展.其中有63GHz的毫米波段的CMOS压控振荡器,数据速率达50Gb/s的2:1多路复用器,40GHzCMOS低功耗注入锁定分频器,24GHzCMOS射频前端和17GHzISM/WLAN的CMOS射频前端等.同时,介绍CMOS射频集成电路的几种主要应用,如无线局域网和射频识别等. 相似文献
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介绍了一种新研制的W频段固态GaN功率放大器毫米波源,给出了系统组成与工作原理,提供了其主要部件W频段固态Gunn驱动源、W频段波导-微带转换器、主放大器芯片基本性能及实验测试结果。该固态毫米波源工作频率94 GHz,输出连续波功率大于300 mW,线性增益10 dB,附加效率(PAE)大于16%。在W频段固态毫米波源研制过程中,其单片微波集成电路(MMIC)功率放大器半导体材料选择经历了GaAs、InP到GaN演变,结果清楚表明, W频段毫米波源的GaN MMlC功率放大器输出功率、增益、效率、高温性能要优于其他固态MMIC功率放大器性能。 W频段大功率固态GaN MMlC技术将在毫米波领域带来新的技术革命和应用。 相似文献
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A 52 GHz Phased-Array Receiver Front-End in 90 nm Digital CMOS 总被引:1,自引:0,他引:1
《Solid-State Circuits, IEEE Journal of》2008,43(12):2651-2659
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This paper describes millimeter-wave wide-band single-ended and balanced amplifiers using novel multilayer monolithic microwave/millimeter-wave integrated circuit (MMIC) technology. The fundamental characteristics of thin-film transmission lines and a 50-GHz-band multilayer MMIC directional coupler are described through measurements up to 60 GHz. A single-ended amplifier fabricated in a 1.1 mm×0.8 mm area, shows a gain of about 12 dB with a noise figure of better than 5 dB around 50 GHz. A balanced amplifier fabricated using the multilayer MMIC directional couplers and single-ended amplifiers, shows a gain of 10-17 dB with input and output return losses of better than 14 dB from 33 to 53 GHz. The transmission lines and directional couplers can be effectively combined with millimeter-wave active circuits without degrading the circuit performance or increasing the circuit area. To our knowledge, these are the first millimeter-wave active circuits employing multilayer MMIC technology 相似文献
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Millimeter-wave CMOS design 总被引:6,自引:0,他引:6
Doan C.H. Emami S. Niknejad A.M. Brodersen R.W. 《Solid-State Circuits, IEEE Journal of》2005,40(1):144-155
This paper describes the design and modeling of CMOS transistors, integrated passives, and circuit blocks at millimeter-wave (mm-wave) frequencies. The effects of parasitics on the high-frequency performance of 130-nm CMOS transistors are investigated, and a peak f/sub max/ of 135 GHz has been achieved with optimal device layout. The inductive quality factor (Q/sub L/) is proposed as a more representative metric for transmission lines, and for a standard CMOS back-end process, coplanar waveguide (CPW) lines are determined to possess a higher Q/sub L/ than microstrip lines. Techniques for accurate modeling of active and passive components at mm-wave frequencies are presented. The proposed methodology was used to design two wideband mm-wave CMOS amplifiers operating at 40 GHz and 60 GHz. The 40-GHz amplifier achieves a peak |S/sub 21/| = 19 dB, output P/sub 1dB/ = -0.9 dBm, IIP3 = -7.4 dBm, and consumes 24 mA from a 1.5-V supply. The 60-GHz amplifier achieves a peak |S/sub 21/| = 12 dB, output P/sub 1dB/ = +2.0 dBm, NF = 8.8 dB, and consumes 36 mA from a 1.5-V supply. The amplifiers were fabricated in a standard 130-nm 6-metal layer bulk-CMOS process, demonstrating that complex mm-wave circuits are possible in today's mainstream CMOS technologies. 相似文献
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This paper proposes a simulation-based modeling methodology that provides greater flexibility in the design and layout of millimeter-wave CMOS circuits than measurement- based models do. A physical model for the metallization capacitances of the transistors is described and new layout techniques are introduced that exploit these capacitances to improve the circuit performance. The accuracy of the models is verified by the design and measurement of five oscillators operating in the range of 40 GHz to 130 GHz in 90-nm CMOS technology. 相似文献
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《Solid-State Circuits, IEEE Journal of》2008,43(5):1052-1053
The papers in this special section reflect the general challenges that RF IC designers are confronting: mainly, practical integration of CMOS power amplifiers, implementation of integrated circuits from 60 GHz to above 100 GHz, and various circuit techniques to enable broadband/multi-band transceivers. 相似文献
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《Microwave Theory and Techniques》2009,57(7):1637-1646
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Ellinger F. Rodoni L.C. Sialm G. Kromer C. von Buren G. Schmatz M.L. Menolfi C. Toifl T. Morf T. Kossel M. Jackel H. 《Microwave Theory and Techniques》2004,52(5):1382-1391
In this paper, a passive down mixer is proposed, which is well suited for short-channel field-effect transistor technologies. The authors believe that this is the first drain-pumped transconductance mixer that requires no dc supply power. The monolithic microwave integrated circuit (MMIC) is fabricated using digital 90-nm silicon-on-insulator CMOS technology. All impedance matching, bias, and filter elements are implemented on the chip, which has a compact size of 0.5 mm/spl times/0.47 mm. The circuit covers a radio frequency range from 30 to 40 GHz. At a RF frequency of 35 GHz, an intermediate frequency of 2.5 GHz and a local-oscillator (LO) power of 7.5 dBm, a conversion loss of 4.6 dB, a single-sideband (SSB) noise figure (NF) of 7.9 dB, an 1-dB input compression point of -6 dBm, and a third-order intercept point at the input of 2 dBm were measured. At lower LO power of 0 dBm, a conversion loss of 6.3 dBm and an SSB NF of 9.7 dB were measured, making the mixer an excellent candidate for low power-consuming wireless local-area networks. All results include the pad parasitics. To the knowledge of the authors, this is the first CMOS mixer operating at millimeter-wave frequencies. The achieved conversion loss is even lower than for passive MMIC mixers using leading edge III/V technologies, showing the excellent suitability of digital CMOS technology for analog circuits at millimeter-wave frequencies. 相似文献
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设计了一款应用于60 GHz频率综合器的二分频注入锁定分频器。通过优化射频注入和直流偏置网络,降低了注入信号损耗,提高了注入效率;通过优化注入管和交叉管尺寸、减小寄生电容、降低振荡摆幅,提高了注入效率,降低了功耗;电磁仿真毫米波段电感,建立集总等效电路模型,实现了高感值、低串联电阻的差分电感的设计,提高了锁定范围。电路设计采用SMIC 40 nm 1P6M RF CMOS工艺,芯片核心面积为0.016 mm2。仿真结果表明,在0.8 V电源电压下,电路功耗为5.5 mW,工作频率范围为55.2~61.2 GHz,注入锁定范围为6.0 GHz,满足低功耗和宽锁定范围的要求,适用于毫米波段锁相环频率综合器。 相似文献