一种新型MEMS微驱动器的设计与仿真分析

提出并设计了具有双稳态功能的新型电磁型MEMS微驱动器结构形式。微驱动器由导磁的两端固支的扭梁、两端可自由摆动的悬臂梁,以及永磁体、下磁路和平面线圈组成。永磁体的使用,实现了器件的双稳态功能,从而可以得到低功耗的磁驱动器。通电线圈用来实现器件的姿态转换。对设计的器件进行了电磁仿真分析,验证了器件的双稳态机制,分析表明:铁芯的存在对器件功能有决定性的影响。     

微型驱动器及其测试技术

微驱动器是微型机电系统的关键部分。本文讨论了微驱动器中的微静电马达、微电磁马达、超声波马达、压电微驱动器、形状记忆合金微驱动器，并介绍了微驱动器的测试技术。     

一种非硅微加工技术制作的电热微驱动器

介绍了一种由非硅微加工技术制作的电热微驱动器。基于双金属效应,采用聚合物SU-8胶和金属镍作为功能材料和结构材料,铜为牺牲层材料制作电热微驱动器。利用ANSYS有限元分析软件进行仿真,模拟驱动位移随加热时间的变化关系,并由此得出驱动力的大小,比较结果后确定结构参数。再通过光刻、掩模电镀和牺牲层刻蚀等工艺,加工制作出了电热微驱动器样品,并对样品进行了观测和分析。     

新型复合结构电热微驱动器的研制

在弯曲梁电热微驱动器原理的基础上,通过引入热膨胀系数更大的聚合物,提出了一种新型复合结构电热微驱动器。采用了ANSYS有限元分析软件,对其基本结构形式进行了系统的仿真分析,得到了一组初步优化的器件结构参数。仿真结果表明:新型电热微驱动器有更低的能耗和更大的位移。采用非硅表面微加工技术,成功制备了新型复合结构电热微驱动器。     

用于硅基氮化镓可调微镜的静电梳齿型微驱动器设计

提出并设计了一种用于硅基氮化镓(GaN)可调微镜的静电梳齿型微驱动器.利用有限元软件建立了该器件的几何结构模型,对器件的结构进行了仿真优化.此外,采用微机电系统(MEMS)加工工艺,制作出了用于硅基氮化镓可调微镜的梳齿型微驱动器,并对其驱动特性进行测试.测试结果表明:所制作的微驱动器的位移随着电压的变化呈二次方关系,与仿真结果基本一致.当加载驱动电压为200 V时,微驱动器的驱动位移可达到1.08 μm.     

电磁悬浮微驱动器的快速跟踪模糊控制

介绍了一种电磁悬浮微驱动器的工作原理;针对磁悬浮微驱动器的运动特点,提出了一种基于最大值原理的模糊PID微驱动控制方法,对每种控制单元的输入输出信号与控制参数作了详细分析与矫正;首先进行了仿真实验,然后构建了微驱动器的实验装置,采用阶跃、方波和阶梯等驱动信号来检验该微驱动器的跟踪能力;实验数据表明,仿真结果与实验结果基本一致,验证了所提出的微运动控制方法的正确性和可行性。     

平面线圈型MEMS微电磁驱动器的理论分析与实验研究

介绍了一种平面线圈型电磁驱动的MEMS微驱动器,基于分段磁路的网络方程法,针对微电磁驱动器所采用的平面线圈的结构特点,比较了考虑磁动势的分布效应和传统的集总处理两种方法所建立的平面线圈微驱动器的非线性磁路模型.实验结果表明考虑线圈绕组半径不同而产生的分布效应可以为平面线圈型微驱动器建立可靠的模型,便于定量分析微驱动器结构物理参数对于磁通分布和电磁力的影响,从而为进一步优化设计该微电磁驱动器提供了理论分析依据.     

溅射PZT薄膜微驱动器的工艺研究

采用磁控溅射法制备的具有PZT结构驱动薄膜,结合微机械电子(MEMS)工艺制作以PZT薄膜为驱动的无阀型微驱动器。探讨了PZT薄膜微驱动器的制备工艺方法,解决了制备工艺中存在的关键问题。     

应用于电磁驱动器的非线性平面微弹簧及其集成制造工艺研究

平面微弹簧是MEMS器件(如微驱动器、开关等)中一种常用的微结构。目前,平面非线性微弹簧的设计、制造与应用正日益成为关注的焦点。本文针对微机械电磁驱动器的需求,研制了一种变形量在100 μm左右,弹性变形力在5 mN附近的非线性变刚度微弹簧。研究包括通过仿真分析确定了弹簧的结构方案和影响因素,提出了配套的原位集成制造微加工工艺,并测试了所研制“V型”平面微弹簧的非线性特性,验证了所提出方案的可行性。为非线性弹簧的进一步设计和应用提供参考。     

微电热驱动器中偏置层的分析

设计了一种电热微驱动器,根据几何关系、泰勒公式和材料力学求得偏置层结构末端的位移公式,并验证了采用镍作为偏置层材料的合理性.通过Coventorware软件中的有限元模块进行仿真分析,得出施加驱动电压为5 V,响应时间为5 ms,驱动器的初始温度为300 K时,得出偏置层宽度W1与驱动器位移d的曲线关系.通过验证驱动器的最大应力为235 MPa,小于镍的许用应力,确定驱动器在W1=20μm可以进行可靠的工作.分析偏置层厚度和宽度的加工误差对驱动器末端位移的影响,可得在对偏置层进行加工时要严格控制偏置层厚度H1的加工误差.     

微机电系统的现状与展望

在过去20多年中,微机电系统(MEMS)已经从早期的技术开发、设备探索和实验室研究的阶段发展到当前的实际应用阶段,并逐渐扩展到许多新的研究和探索领域,MEMS已经成为21世纪最具潜力的研究领域之一。对MEMS进行了简要的介绍,包括MEMS应用,MEMS的市场情况,以及3种主要的MEMS微制造技术,即体微制造、面微制造和LIGA技术。最后,提出了MEMS将来研究和发展的趋势。     

Solid-based CAPP for surface micromachined MEMS devices

Process planning for a MEMS device is almost always conducted manually by the designer to date. As the structures of MEMS devices become more and more complicated, in order to release the designers from the hard and tedious work and speed up the development of MEMS products, such a situation should be changed. In this study, a solid based CAPP method for surface micromachined MEMS device is presented. With this method, a MEMS device is designed with a traditional CAD system, and its process planning is conducted automatically based on the solid model created. The process features with engineering semantics are extracted first. Then, the process layer model is constructed with each process layer of the model being coincident with the fabrication layer of surface micromachining. Finally, the masks are synthesized and the fabrication process is generated. Furthermore, to guarantee the manufacturability of the designed MEMS device, a systematic evaluation method is proposed. The proposed design and CAPP methods enable designers to concentrate on functional and shape design of MEMS devices.     

Paired-wire carrying current actuators and piezoelectric beam sensors for microelectromechanical systems

Microsystem Technologies - An alternative actuator for MEMS/NEMS device is proposed and analyzed. The actuator is based on the paired-wires (PW) carrying current concept, which makes the actuator...     

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

Si micro-electro-mechanical device with GaN light emitting diode (LED) is monolithically fabricated. The GaN-LED layer was grown by molecular beam epitaxy on Si wafer and the basic properties of the LED were tested. The GaN/Si wafer was micromachined using deep reactive ion etching to fabricate Si electrostatic comb-drive actuator. A light distribution variable device with Si actuator was fabricated from the grown wafer. From those experiments, it is shown that the combination of the GaN crystal growth on Si wafer and the Si micromachining is valuable for a new kind of optical micro-systems.     

采用MEMS技术制造硅磁敏三极管

阐述了采用MEMS技术与反外延技术相结合在硅片表面制造具有矩形板状立体结构的硅磁敏三极管的设计原理、结构和工艺。结果表明 ,设计的硅磁敏三极管制造技术不但能与IC工艺相兼容 ,而且便于集成化 ,将有广泛的应用领域。     

Modeling and optimal design of piezoelectric cantilevermicroactuators

A novel model is described for predicting the static behavior of a piezoelectric cantilever actuator with an arbitrary configuration of elastic and piezoelectric layers. The model is compared to deflection measurements obtained from 500-μm-long ZnO cantilever actuators fabricated by surface micromachining. Modeled and experimental results demonstrate the utility of the model for optimizing device design. A discussion of design considerations and optimization of device performance is presented     

Manufacturing costs for microsystems/MEMS using high aspect ratio microfabrication techniques

The emphasis on high aspect ratio micromachining techniques for microsystems/MEMS has been mainly to achieve novel devices with, for example, high sensing or actuation performance. Often these utilize deep structures (100–1,000 μm) with vertical wall layers but with relatively modest spatial resolution (1–10 μm). As these techniques move from research to industrial manufacture, the capital cost of the equipment and the cost of device manufacture become important, particularly where more than one micromachining technique can meet the performance requirements. This paper investigates the layer-processing costs associated with the principal high aspect ratio micromachining techniques used in microsystems/MEMS fabrication, particularly silicon surface micromachining, wet bulk etching, wafer bonding, Deep Reactive Ion Etching, excimer laser micromachining, UV LIGA and X-ray LIGA. A cost model (MEMSCOST) has been developed which takes the financial, operational and machine-dependent parameters of the different manufacturing techniques as inputs and calculates the layer-processing costs at the wafer and chip level as a function of demand volume. The associated operational and investment costs are also calculated. Cost reductions through increases in the wafer size and decreases in chip area are investigated, and the importance of packaging costs demonstrated.     

A zero static power consumption bi-stable RF MEMS switch based on inertial generated timing sequence method

Microsystem Technologies - This paper reports on a novel in-plane and electrostatically actuated bi-stable radio frequency (RF) microelectromechanical systems (MEMS) switch. A lateral RF MEMS...     

MEMS tunable capacitors with fragmented electrodes and rotational electro-thermal drive

This paper reports on the design, simulation and fabrication of tunable MEMS capacitors with fragmented metal (AlSi 4%) electrodes. We examine a rotational electro-thermal actuation. An analytic model of the rotational effect thermal actuator was established in order to show the periodicity of the capacitance when the angle increases. Evaluation of the impact of fringing fields on the capacitance has been carried out using finite element analysis (FEA). The MEMS capacitors were fabricated using metal surface micromachining with polyimide sacrificial layer. The maximum rotation, corresponding to a maximum angle of 7°, was obtained near 1.2 V and 299 mA. The proposed capacitor has a practical tuning range of 30%. FEA has shown that this figure can be improved with design optimization. The MEMS architecture based on rotational effect and fragmented electrodes does not suffer from the pull in effect and offers a practical solution for future above-IC capacitors.