共查询到20条相似文献,搜索用时 15 毫秒
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Suzuki A. Itoh T. Terakado T. Kasahara K. Asano K. Inomoto Y. Ishihara H. Torikai T. Fujita S. 《Electronics letters》1987,23(18):954-955
A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as ?31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated. 相似文献
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An optical receiver configuration based on the concept of using a single optically gated metal-semiconductor-fieid-effect transistor (MESFET) to perform the function of a photodetector and preamplifier has been introduced. The proposed optoelectronic integrated circuit (OEIC) receiver has been analyzed theoretically. A simplified noise model of the receiver has also been developed. Results have been presented for an OEIC receiver based on InGaAs MESFET supposed to be fabricated with matured InGaAs-InP MMIC technology. Theoretical results based on a simplistic noise model reveal that the proposed OEIC receiver has superior performance characteristics over the existing optical receivers 相似文献
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Lo Y.H. Grabbe P. Iqbal M.Z. Bhat R. Gimlett J.L. Young J.C. Lin P.S.D. Gozdz A.S. Koza M.A. Lee T.P. 《Photonics Technology Letters, IEEE》1990,2(9):673-674
Optoelectronic integrated circuit (OEIC) transmitters consisting of 1.5 μm λ/4-shifted distributed feedback (DFB) lasers and InGaAs-InAlAs MODFETs were fabricated for the first time. The entire processing requires only two organometallic vapor-phase epitaxy (OMVPE) growths, with the potential for high yield and low cost. Direct modulation of the OEIC transmitter is demonstrated for bit rates up to 10 Gb/s. A transmission experiment using the OEIC transmitter and a hybrid p-i-n/HEMT receiver is conducted at 5 Gb/s, with a sensitivity of -20 dBm and a bit-rate-distance product of 145 Gb/s-km 相似文献
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设计了一种单片集成的光电接收机芯片.在同一衬底上制作了基于同一工艺的光电二极管与接收机电路,以消除混合集成引入的寄生影响.这种单片集成接收机采用了先进的深亚微米MS/RF(混合信号/射频)CMOS工艺,利用这种新型工艺提供的新技术对原有光电二极管进行了改进,使其部分性能显著改善,并对整个光电集成芯片性能的提高有所帮助. 相似文献
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Chang G.-K. Hong W.P. Gimlett J.L. Bhat R. Nguyen C.K. Sasaki G. Young J.C. 《Photonics Technology Letters, IEEE》1990,2(3):197-199
A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55-μm-wavelength OEIC receivers 相似文献
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Suzaki T. Fujita S. Inomoto Y. Terakado T. Kasahara K. Asano K. Torikai T. Itoh T. Shikada M. Suzuki A. 《Electronics letters》1988,24(20):1283-1284
High-performance, long-wavelength OEICs on a GaAs-on-InP heterostructure were fabricated. For the transmitter OEIC, high-speed operation up to 2.4 Gbit/s was achieved, and a receiver sensitivity as high as -26.0 dBm for a 1.2 Gbit/s NRZ signal was realised for the receiver OEIC. To confirm the usefulness of these OEICs for optical fibre networks, a 1.2 Gbit/s optical fibre transmission experiment was successfully carried out over a 52.5 km span 相似文献
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Wang J.S. Shih C.G. Chang W.H. Middleton J.R. Apostolakis P.J. Feng M. 《Photonics Technology Letters, IEEE》1993,5(3):316-318
State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Ω and the effective transimpedance into a 50 Ω load is 565 Ω. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz-Ω. This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6-μm gate length and a metal-semiconductor-metal (MSM) detector with 2-μm lines×3-μm spacings 相似文献
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《IEE Review》1992,38(1):35-39
In the future every house could be served by a single optical fibre which will carry basic telephony plus a wide range of broadband services such as video, videophone and high definition TV. The author discusses optoelectronic circuits (OEIC) as cheap optical receiver components. The construction and operation of OEIC are described and the use of them in optical receivers is discussed 相似文献
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Chandrasekhar S. Lunardi L.M. Gnauck A.H. Ritter D. Hamm R.A. Panish M.B. Qua G.J. 《Electronics letters》1992,28(5):466-468
Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<> 相似文献
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N. Uchida Y. Akahori M. Ikeda A. Kohzen J. Yoshida T. Kokubun K. Suto 《Photonics Technology Letters, IEEE》1991,3(6):540-542
A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance preamplifier and a p-i-n photodiode has been demonstrated. The OEIC is fabricated using metal-organic vapor phase epitaxy (MOVPE) grown epilayers and the beryllium ion-implantation technique. The receiver exhibits a sensitivity of -34.7 dBm at 622 Mb/s for BER-10/sup -9/. Using a cascode preamplifier reduces an input capacitance to about one-half of that of an inverter type, which results in the use of a larger feedback resistance of 16 k Omega . The combination of low input capacitance and large feedback resistance reduces the noise current of the receiver and results in high sensitivity.<> 相似文献
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Iwama T. Horimatsu T. Oikawa Y. Yamaguchi K. Sasaki M. Touge T. Makiuchi M. Hamaguchi H. Wada O. 《Lightwave Technology, Journal of》1988,6(6):772-778
A compact 4×4 optical switch module consisting of a monolithic 4-channel OEIC receiver chip, a 4×4 GaAs IC chip, and a 4-channel OEIC transmitter chip has been developed for the first time. The module offers good performance, without an optical loss, a bandwidth of more than 600 MHz, and a crosstalk between neighboring channels of less than -20 dB. It has a good switching and distributive performance for high speed optical input signals of 560 Mbit/s. The switch module is attractive for use in high data-rate optical communication systems, particularly in local area networks, CATV systems, and intra-office links 相似文献
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Zhang Y. Whelan C.S. Leoni R. Marsh P.F. Hoke W.E. Hunt J.B. Laighton C.M. Kazior T.E. 《Electron Device Letters, IEEE》2003,24(9):529-531
An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m. 相似文献
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Hong W.-P. Chang G.-K. Bhat R. Gimlett J.L. Nguyen C.K. Sasaki G. Koza M. 《Electronics letters》1989,25(23):1561-1563
Reports the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GaInAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260 mS/mm. An excellent receiver response to 1.7 Gbit/s NRZ signals has been obtained.<> 相似文献
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A 10 Gb/s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fab ricated based on the φ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT. An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simu lation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF/μm and a photosensitive area of 50×50 μm~2. The whole chip has an area of 1511×666 μm~2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950×1910μm~2 and the measured results demonstrate an input dynamic range of 34 dB (10-500 mVpp) with constant output swing of 500 tnVpp. 相似文献
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Hamacher M. Trommer D. Heidrich H. Albrecht P. Jacumeit G. Passenberg W. Rohle H. Schroeter-Janssen H. Stenzel R. Unterborsch G. 《Photonics Technology Letters, IEEE》1995,7(2):179-181
For the first time a packaged polarization diversity coherent receiver OEIC including detector units (photodetectors, JFET, load resistor) has been fabricated with the following data: waveguide loss 2 dB, 3 dB balance within 0.4 dB, polarization extinction >30 dB (TM) and >17 dB (TE), 3 dB cutoff frequency of 0.9 GHz, common mode rejection ratio 30 dB 相似文献
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Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10-9 . The sensitivity of this OEIC in a 1.0-μm CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ω effective transimpedance bandwidth product of the implemented amplifier is achieved 相似文献