用投影预变换提高自适应波束的稳健性

在快拍数较少和（或）存在系统误差时，自适应波束形成的性能会变差，特别是会引起方向图副瓣电平升高－－波束畸变。本文提出的投影变换法利用干扰方向的初略估计，在未精确预知阵列流形的条件下，可以显著改善自适应方向图的副瓣性能，并提高自适应算法的收敛性，计算机仿真结果验证了这一优点。     

主瓣干扰下自适应方向图保形方法的研究

当存在主瓣干扰时，自适应天线方向图会出现副瓣电平升高及主波束变形的严重问题。本文提出了基于阻塞矩阵预处理的自适应波束保形方法和基于特征投影预处理的自适应波束保形方法，这两种方法在抑制干扰的同时，有效地解决了上述的波束畸变问题。仿真结果证明了这两种方法的有效性。     

线阵数字波束形成技术

在自适应数字波束形成应用于抗干扰之前通常采用低副瓣技术克服干扰对接收机性能的影响,常用的低副瓣方法有幅度加权和唯相位加权。唯相位加权降副瓣方法的工程实现比较容易,通过控制移相器即可实现。研究了唯相位降副瓣的方法,并给出了仿真结果,然后在此基础上进行了自适应数字波束形成。仿真结果表明低副瓣和自适应数字波束形成相结合可以达到很好的抗干扰效果。     

大型线阵自适应数字波束形成超低副瓣技术

自适应数字波束形成技术是现代阵列天线系统必须采用的关键技术。为了对付强有源干扰,现代相控阵雷达都必须具有自适应的干扰抑制能力。除了对抗有源干扰外,大部分雷达还要求具有强杂波背景下检测目标的能力,这就需要雷达天线具有低或超低副瓣电平。本文针对大型线阵,结合数字波束形成,讨论了在保证自适应干扰置零的前提下,如何控制自适应波束的副瓣电平,从而实现阵列系统的超低副瓣性能。     

基于非均匀子阵的双和/三差通道同时抑制主副瓣干扰

针对相控阵单脉冲雷达体制测角的情况,本文提出了一种降维双和/三差通道自适应同时抑制主、副瓣干扰的算法.该算法利用权值逼近的方法,在非均匀子阵上形成静态和、俯仰差、方位差、双差波束以及指向副瓣干扰方向的和波束,差波束、指向副瓣干扰的和波束作为静态和波束的辅助波束,双差波束作为差波束的辅助波束,根据维纳滤波原理通过对辅助波束的优化加权对消掉和波束中的主副瓣干扰信号及差波束中的主瓣干扰信号,设计出一种新的干扰抑制和测角跟踪算法.所提算法结构简单、测角精度高、能同时抑制主副瓣干扰且鉴角斜率无需修正.仿真实验和性能分析证明了所提算法的有效性和正确性.     

一种改善相控阵雷达低空探测性能的方法研究

利用自适应数字波束形成法来降低相控阵雷达在探测低空掠海飞行小目标时多路径效应的影响。仿真分析表明：自适应数字波束形成能对多路径干扰信号自适应瞄零并得到超分辨率和超低副瓣性能,从而有效改善相控阵雷达低空探测性能。     

一种改进的机载雷达抗副瓣干扰方法

某机载雷达采用和差波束空时自适应处理(ΣΔ-STAP)方法能较好地对抗一个主瓣干扰和ΔA波束非零点副瓣干扰,但当干扰从ΔA波束副瓣零点方向进入时,主瓣分裂,对抗效果差。结合雷达实际特点,提出一种改进的ΣΔ-STAP方法,利用和、差和保护3个通道进行二维自适应处理。仿真结果表明,该方法能够很好对抗副瓣零点干扰,性能较以前ΣΔ-STAP方法有10 dB的改善,并且受幅相误差的影响变弱。     

一种改进的自适应波束形成技术研究

在阵列信号处理过程中,有限次快拍采样会使得到的自适应波束出现畸变的问题,此时,采用幅度加权来抑制副瓣的效果也不太理想。文中将分析一种基于协方差矩阵非线性变换的自适应波束形成技术,对接收数据协方差矩阵进行非线性变换,然后采用Capon法形成自适应波束。通过仿真,表明该方法具有良好的波束保形能力,信干噪比损失较小,波束经幅度加权后,副瓣高度可降低约10dB。     

基于有向阵元的圆环阵列自适应波束形成分析

在自适应波束形成技术中,相比于线阵,圆环阵列有着许多不可比拟的优势,其主要缺点是副瓣电平比较高。本文通过引入具有不同辐射函数的有向阵元来改善圆阵的这一性能。引入有向阵元有效地降低了圆环阵列方向图的副瓣电平。     

一种基于自适应波束形成的主瓣保形算法研究

针对自适应波束形成中各种因素包括目标信号存在引起自适应方向图主瓣变形问题,提出基于主瓣子空间的自适应主瓣保形算法,联合已有的正交投影减小方向图因快拍引起的副瓣电平抬高问题。通过保持自适应权中主瓣子空间分量不变以保证主瓣形状不变,通过主瓣子空间选取的大小确定对主瓣的控制强弱。该算法对主瓣有专门的控制,无需估计干扰方向,适用于发射方向图的自适应零陷、和差自适应波束形成,仿真表明该算法对提高自适应波束形成主瓣保形、降低小方向图因快拍引起的副瓣电平抬高问题有较明显的效果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.