Li1.0Nb0.6Ti0.5O3陶瓷的低温烧结其微波介电性能

研究了以Li1．0Nb0．6Ti0．5O3(LNT)陶瓷为基体, B2O3-ZnO-La2O3(BZL)玻璃为烧结助剂的复合材料的低温烧结行为及微波介电特性．研究表明,BZL玻璃能有效降低LNT陶瓷的烧结温度,掺入10wt％BZL玻璃的复合材料能够在900℃烧结致密．XRD与SEM分析结果表明,添加BZL玻璃的样品烧结后含有LNT和LaNbTiO6两种晶相,其中LaNbTiO6相是LNT与BZL玻璃在烧结过程中发生化学反应的产物．在LNT陶瓷中添加BZL玻璃使材料的介电常数和品质因数下降,但有助于减小体系的谐振频率温度系数．掺入10wt％BZL玻璃的复合材料在900℃烧结2h后获得了比较满意的微波介电特性:介电常数k≈58,品质因数Q×f≈4800GHz,谐振频率温度系数τf≈11×10-6／℃．     

溶胶-凝胶法引入ZnO-2B2O3-7SiO2玻璃对BaO-Sm2O3-4TiO2陶瓷性能的影响

采用固相反应法合成BaO-Sm2O3-4TiO2 (BST)陶瓷粉体.系统研究了溶胶-凝胶法引入ZnO-2B2O3-7SiO2 (ZBS)玻璃对BST陶瓷烧结特性、物相组成、微观形貌及介电性能的影响.结果表明,添加ZBS玻璃的陶瓷试样主晶相仍为类钙铁矿钨青铜结构的BaSm2Ti4O12,次晶相为Sm2Ti2O7.通过溶胶-凝胶法添加6％(质量分数)的ZBS玻璃,可使BST陶瓷的烧结温度从1350℃降低到1050℃,在1050℃烧结3h所得BST陶瓷介电性能优良:εr=60.17,tanδ=0.004,τf=-7.9×10 6/℃.     

掺Yb^3硼磷酸盐玻璃物理和光谱性能研究

通过熔融法制得了一种新型掺Yb^3＋的（60-X）P2O5-xB2O3-40ZnO（x=5，10，15，20，25，30％（摩尔分数））系统激光玻璃，并分析了B2O3含量对玻璃结构、物理性能和光谱性能的影响。结果表明，随B2O3含量增加，玻璃由链状变为类似石英玻璃的三维网络结构，力学和热学性能逐步得到改善，并在20％（摩尔分数）B2O3时具有最佳值，当B2O3含量超过20％（摩尔分数）后，玻璃中[BO3]三角体含量开始增多，结构变得松散，力学和热学性能变差，当B203含量达到30％（摩尔分数）时玻璃发生了分相现象。随B2O3含量增加，积分吸收截面在3．77-4．11×10^4pm^3之间，受激发射截面在0．726-0．816pm^2之间，荧光寿命在0.903-0.965ms之间，增益系数在0．662-0.737pm^2．ms之间，最小泵浦强度在1．128-1．398kW／cm^2之间变化。这类硼磷酸玻璃有望成为高平均功率固体激光器的候选基质。     

低温烧结0.4CaTiO3-0.6Ca(Mg1/3Nb2/3)O3介电陶瓷的实验研究

对添加H3BO3-ZnO-R(BZR)玻璃实现0.4CaTiO3-0.6Ca(Mg1/3Nb2/3)O3(0.6CMNT)介质陶瓷的低温烧结进行了系统的研究。研究结果表明,在一定BZR玻璃添加量(1m%(质量分数)～5m%(质量分数),m是比例系数,且m>0)的条件下,陶瓷的最佳烧结温度均在950℃;在950℃烧结,BZR玻璃的添加量为2m%(质量分数)时,介电常数εr=47.26976,介电损耗tanδ=0.0098;BZR玻璃的添加量为3m%(质量分数)时,介电常数为εr=47.75029,介电损耗tanδ=0.0102。并且发现,添加适量的BZR玻璃,可以促进晶粒生长,但过量则会在烧结过程中产生过多的液相,且液相扩散严重,致使部分晶粒未能充分生长,而部分晶粒却异常长大,晶粒大小不均匀,影响陶瓷的介电性能。     

C（0．）（Li1/2Sm1/2）0．7TiO3微波介质陶瓷的低温烧结研究

采用传统陶瓷制备工艺,制备了掺杂Na2O-CaO-B2O3（NCB）氧化物的C（0．）（Li1/2Sm1/2）0．7TiO3（CLST）陶瓷,研究了NCB掺杂量与晶相组成、显微结构、烧结性能及微波介电性能的关系.研究结果表明：复合氧化物NCB掺杂量在1wt%～15wt%范围内没有杂相生成,晶相仍呈斜方钙钛矿结构.随着NCB添加量的增加,陶瓷致密化温度和饱和体积密度降低,介电常数ε~r、无载品质因数与谐振频率乘积Qf值也呈下降趋势,频率温度系数Tf向正方向增大.NCB氧化物掺杂能有效地将CLST陶瓷的烧结温度由1300℃降低至900℃.添加12.5wt%NCB的CLST陶瓷在低温900℃烧结5h仍具有良好的微波介电性能：εr=73.7,Qf=1583GHz,Tf=140.1×10^-6/℃,满足高介多层微波器件的设计要求.     

固相法制备BaTiO3基细晶陶瓷粉体

通过传统的固相法制备BaTiO3基细晶陶瓷粉体，讨论了在预烧温度和烧结温度相同的情况下，探讨不同施主元素的添加量对陶瓷晶粒及电性能的影响；在预烧温度和烧结温度相同的情况下，探讨不同受主杂质对陶瓷晶粒及电性能的影响；在施、受主掺杂量及烧结温度相同的情况下，探讨不同的预烧温度对陶瓷晶粒及电性能的影响．为了制备高升阻比、晶粒细小的BaTi03陶瓷，选取的材料配方为Ba1.0Ti1.01O3＋0.4％（摩尔分数）Y2O3＋0.03％（摩尔分数）Mn（NO3）2＋2％S102，粉体在1200℃预烧，保温2h，样品在1280℃烧成。上电极后测得常温电阻率为4937Ω·cm，升阻比为7．116×10^3，温度系数为14．03％，居里温度为128．4℃．     

Y2O3掺杂量对ZnO-Bi2O3-Nb2O5压敏陶瓷电性能的影响

通过掺杂Y2O3和优化烧结工艺制备了ZnO-Bi2O3-Nb2O5压敏陶瓷。利用XRD、SEM和VSR研究了Y2O3掺杂量对其电性能的影响。结果表明，随着Y2O3掺杂量增加，陶瓷电阻率ρ减小，非线性系数α增大；Bi2O3气氛下烧结（1170℃、保温2．5h）的陶瓷，当x（Bi2O3）和x（Nb2O5）为3％、y（Y2O...     

添加剂对La2Ti2O7陶瓷性能的影响

研究了ZnO,Nb2O5和H3BO3的加入对La2Ti2O7陶瓷的烧结和介电性能的影响,并对影响机理作了初步探讨.结果表明选择合适种类和数量的添加剂能够使La2Ti2O7陶瓷在1220～1300℃之间烧结.添加1%(质量分数,下同)ZnO,0.5%Nb2O5和3%的H3BO3的La2Ti2O7陶瓷的介电常数分别为48和40,介电损耗在10-4数量级;在10kHz下,介电常数的温度系数分别为-24×10-6/℃和-48×10-6/℃,是一种性能良好的介质材料.     

低温烧结Al2O3-硅酸盐玻璃系玻璃陶瓷的制备和性能研究

采用Al2O3-硅酸盐玻璃复合体系制备低温烧结玻璃陶瓷，通过TG-DTA、XRD、SEM等分析方法对样品进行表征，随着玻璃含量的增加玻璃陶瓷的烧结温度逐渐降低，在玻璃含量约为50％（质量分数）时玻璃陶瓷的热导率达到最大值2．70W/m·K，此时的玻璃陶瓷具有低的烧结温度（800℃）、高的相对密度（≥95％）、低的电容率（8～10）、低的介电损耗（1．5％～0．7％），有望成为LED封装用基板材料。     

CaO-B2O3-SiO2微晶玻璃体系烧结性能的正交研究

采用正交试验法(三因素三水平),研究烧结工艺(烧结温度、保温时间、升温速率)对自主设计的CaO-B2O3-SiO2微晶玻璃的介质损耗的影响,因素主次顺序为烧结温度、升温速率、保温时间.选取优化工艺(烧结温度900℃、升温速率8℃/min、保温时间10min)烧结,测定介质损耗为1.81×10-4,介电常数为5.6(1MHz);对样品进行XRD衍射分析,结果表明,晶相依次为CaSiO3、CaB2O4和少量SiO2;SEM形貌分析、EDS分析验证了CaSiO3的存在;微观结构分析表明烧结温度的升高有利于晶粒长大、气孔减少、降低介质损耗.     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Radial GRIN glasses in Li2O-Na2O-Al2O3-TiO2-SiO2 systems

A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Si_2N_2O-Al_2O_3-La_2O_3和Si_2N_2O-Al_2O_3-CaO系统的亚固相关系

本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O