热处理工艺对纳米ZnO薄膜结晶取向及表面形貌的影响

以二水合醋酸锌作为前躯体,单乙醇胺(MEA)作为稳定剂,乙二醇甲醚作为溶剂制备出均匀稳定的溶胶,通过浸渍-提拉法将氧化锌薄膜沉积在玻璃基底上,研究热处理工艺对薄膜结晶取向和表面形貌的影响.随着煅烧温度和煅烧时间的增加,ZnO薄膜表面逐渐致密平滑,(002)峰的强度增大,晶粒尺寸增大.实验结果表明:在500℃煅烧下煅烧两次,煅烧时间为1h制备的薄膜衍射特征峰(002)最强,颗粒最均匀,结合最致密且薄膜表面光滑平整.     

不同掺Al3+浓度的ZnO:Al薄膜性能研究

采用溶胶-凝胶法制备ZnO:Al (ZAO)薄膜,得到了不同掺Al3+浓度的ZAO薄膜;利用X射线衍射仪分析、原子力显微镜、紫外-可见分光光度计及四探针法等仪器与方法对其性能进行了测试。通过分析比较,得出所制备的ZAO薄膜为多晶纤锌矿结构,薄膜表面平整、晶粒致密均匀;Al3+掺杂能提高其导电性能:低掺杂时,薄膜在紫外-可见光范围的透过率超过80%,并伴有蓝移现象产生;高掺杂时,其透过率无明显增加,但蓝移现象加剧,最大蓝移量达340 nm。     

静电自组装法制备SiO2光学增透膜

为了进一步提高低折射率光学器件的可见光透过率,用静电自组装(ESAM)法在玻璃基片(折射率1.45)表面组装了多孔SiO2增透膜。以NH3·H2O催化和HCl与NH3·H2O分步催化分别制备了胶粒带负电荷的SiO2溶胶。用带正电荷的聚电解质聚二烯丙基二甲基氯化铵(PDDA)溶液与SiO2溶胶组装了PDDA/SiO2复合薄膜。然后进行热处理,制备了多孔SiO2薄膜。结果显示,经520℃热处理后,两种薄膜可见光峰值透过率增加,峰值波长由560nm向短波移到520nm,耐机械擦伤强度增大。NH3·H2O催化制备的薄膜透过率相对较高,峰值由98.2%达到99.2%,但耐刮伤能力相对较差。     

锡掺杂氧化锌薄膜乙醇气敏性的研究

以载玻片为基片,依次采用溶胶凝胶、浸渍提拉和热处理方法制备掺杂锡的氧化锌薄膜气敏材料.分别采用红外光谱对氧化锌溶胶体系进行表征;扫描电子显微镜(SEM)观察氧化锌薄膜的表面形貌;主要利用电化学工作站测量极限电流与乙醇气体浓度的关系,研究掺杂氧化锡的氧化锌薄膜在常温下的乙醇气敏性能.结果表明:所成溶胶体系稳定;10层锡掺杂氧化锌薄膜晶型较完整,排列有序,在常温条件下乙醇气体含量为0～500μL/L时,极限电流与气体浓度呈现较好的线性关系;在乙醇气体含量为500μL/L时,灵敏度可高达82.39.     

Mg2+掺杂对ZnO薄膜结构和光学性能的影响

利用溶胶-凝胶法在(100)Si片和玻璃衬底上制备出Mg2 掺杂的ZnO(MgxZn1-xO)薄膜,研究了Mg2 掺杂对ZnO薄膜结构和光学性能的影响.XRD图谱表明,当x＜0.30时,MgxZn1-xO薄膜为纤锌矿结构,随着x值的增加,晶格常数c逐渐减小,a逐渐增大,但晶胞体积V几乎不变;当0.3≤x＜0.7时出现相分离;当x≥0.7时,MgxZn1-xO薄膜为MgO的立方相结构.紫外可见光透射光谱表明,Mg2 掺杂增大ZnO薄膜的禁带宽度,同时也提高可见光的透过率.     

热处理对ITO薄膜的显微结构及光电特性的影响

以硝酸铟和四氯化锡为源材料,无水乙醇和乙酰丙酮为溶剂,采用溶胶—凝胶工艺制备出纳米晶ITO透明导电薄膜.采用XRD和SEM分析了薄膜的物相和显微形貌,采用面电阻测量仪和分光光度计测量了薄膜的方阻和可见光透过率.实验结果表明,随着热处理温度升高,晶化程度提高,组织逐渐均匀致密,晶粒长大,700℃热处理时薄膜晶化趋于完善.同时,方阻减小而可见光透过率增加.经过700℃热处理、厚度为400nm的ITO膜的方阻约300Ω/□,可见光透过率>80%.     

低温热处理制备掺铝氧化锌薄膜技术的研究

使用溶胶-凝胶法在玻璃基底上制备掺铝氧化锌薄膜,研究热处理温度对薄膜结构、形貌、电学性能的影响。结果表明:使用低温热处理制备的薄膜具有更好的C轴取向生长,表面平整质密,面阻最小达到1800Ω/□。     

退火气氛对溶胶-凝胶法制备铝掺杂氧化锌薄膜光电性能的影响

为研究退火气氛对氧化锌(AZO)薄膜光电性能的影响,采用溶胶-凝胶法在石英基片上制备铝掺杂AZO薄膜。利用X射线衍射、场发射电子扫描显微镜对薄膜的物相结构和形貌进行表征;采用霍尔效应测试仪、紫外-可见-红外分光光度计分析AZO薄膜的光电性能。结果表明:退火气氛对AZO薄膜电导的影响机制有明显差异。相较于空气中退火,在N2中退火的AZO薄膜中载流子迁移率变化不明显,薄膜电导性能改善得益于氧空位增加引起的载流子浓度提高;而在95N2/5H2混合气中退火,AZO薄膜中氧空位浓度增加,晶界吸附氧脱附,晶界势垒降低,从而造成载流子浓度和迁移率明显增加,薄膜电阻率为2. 09×10-3Ω·cm。AZO薄膜的透光率在波长400～800 nm的可见光内高于85%。     

退火温度对TiO2及Nb掺杂TiO2薄膜的影响

采用溶胶-凝胶法在普通载玻片上制备了均匀透明的TiO2薄膜和掺Nb的TiO2薄膜,利用XRD,UV-VIS等手段,研究了退火温度对薄膜的结构、紫外-可见光区透射率、光学禁带宽度等性质的影响,并分析了掺杂Nb对TiO2薄膜晶体结构和光学性能的影响。实验结果表明:退火温度越高,薄膜生长取向越好,晶粒尺寸越大,光透过率越低;掺杂Nb后,能明显改善其结晶与生长,并降低其晶粒尺寸,透射率光谱吸收边缘产生蓝移现象。     

甩胶法制备ITO薄膜及性能研究

采用溶胶凝胶并通过甩胶制备薄膜方法制备了ITO薄膜。以转速、甩胶时间、干燥温度和退火温度为参数进行正交试验,确定了甩胶法制备ITO薄膜的最优化条件,并对最优化条件下制备的薄膜进行了电学性能、光学性能和形貌分析。结果表明:该透明导电薄膜具有良好的导电性能及透光性能,其表面方阻为13Ω/□,可见光透过率达到了96%。     

沉积温度对ZnO薄膜结构形貌及光学性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在玻璃衬底上沉积了ZnO薄膜,采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外光谱仪(UVS)等对所得ZnO薄膜进行表征,研究了沉积温度对ZnO薄膜的结构、微观形貌及光学性能的影响。结果表明,沉积温度为500℃时所制备的薄膜质量最佳,形成的是六角纤锌矿ZnO结构,且薄膜沿(002)晶面择优取向生长显著,薄膜表面光滑致密,晶粒细小均匀,尺寸在50~60nm。薄膜表现出良好的光学性能,可见光透过率可达87%。     

Grain Size and Photocatalytic Activity of Nanometer TiO_2 Thin FilmsPrepared by the Sol-gel Method

Transparent anatase TiO2 nanometer thin films with photocatalytic activity were prepared via the sol-gel method on soda-lime glass. The thickness , crystalline phase, grain size, surface hydroxyl amount and so on were characterized by scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission electron microscopy ( TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible spectrophotometer ( UV-VIS). The photocatalytic activity of TiO2 thin films was evaluated for the photocatalytic decolorization of aqueous methyl orange . The effects of film thickness on the crystalline phase, grain size, transmittance and photocatalytic activity of nanometer Ti02 thin films were discussed.     

Al掺杂对ZnO薄膜结构和光学性能的影响

研究了Al掺杂对采用直流磁控溅射方法制备的ZnO薄膜结构及光学性能的影响。X射线衍射结果揭示薄膜具有良好的C轴择优取向生长特性,同时,衬底温度对它们的透射谱和荧光谱有着明显影响,所有薄膜都有大于86%的可见光透过率和陡峭的本征吸收边,但ZAO薄膜的光学透过率略低。Al掺杂导致了更宽的光学带隙,光致发光光谱显示ZnO具有较强的近带本征吸收峰和深能级发射峰,但Al掺杂使得深能级发射峰降低。随着衬底温度的升高,近带边吸收峰蓝移,与光学带隙Eg变化趋势一致。     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

Electrochemical Properties of Poly(ethylene oxide )(PEO) Doped TiO_2-PEO Films Prepared by Sol-gel Dip Coating Technique

PEO modified Ti02 -PEO organic-inorganic hybrid thin films were prepared via, sol-gel dipping process on glass substrate pre-coated with ITO. The preparation parameters were studied. Electrochemical and optical properties of the films were characterized by cyclic voltammetric response and visible transmittance. X-ray diffraction (XRD) was used to determined the crystalline structure of the gel. The results show the sols added with PEO have acceptable stable periods for practical use. The PEO modified optical transitivity of the hybrid films has heavy effects on the crystallization of TiO2 during structural evolution because of the interaction between PEO and Ti02 . PEO-TiO2 films have better electrochemical activity than the TiO2 equivalent behaved as higher Li insertion/extraction current density and cyclic reversibility.     

Growth and characterization of indium doped zinc oxide films sputtered from powder targets

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10~(-4) Ω·cm and the highest carrier concentration of 1.86×10~(21) cm~(-3) can be obtained from Zn O thin films with an indium content of 5at% in the target.     

溶胶-凝胶法制备掺镧钛酸钡薄膜及其光学性质研究

以硝酸镧、醋酸钡、钛酸四丁酯为原料,采用溶胶一凝胶旋涂法制备掺La的钛酸钡薄膜,研究薄膜的晶体结构、表面形貌、紫外-可见光吸收性能及光学带隙。研究结果表明,纯钛酸钡和掺La钛酸钡薄膜均为单一四方钙钛矿结构,La3＋的引入可以使钛酸钡薄膜在可见光区的透过率和光学带隙有一定程度下降,而退火温度对掺镧钛酸钡薄膜光学带隙基本无...     

Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering

In order to obtain high quality NiO thin film grown with the radio-frequency magnetron sputtering method, the influence of O/Ar ratio on the structure, band-gap, resistivity and optical transmittance of NiO thin films were studied. It was found that the obtained NiO thin film showed (111) preferred orientation and higher transparency in the visible region. With the increasing of O/Ar ratio from 1∶7 to 8∶2, the optical transmittance of NiO thin films decreased and the optical band-gap was between 3.4 eV and 3.7 eV, and the sheet resistivity decreased from 5.4×107 Ω/□ to 1.0 ×105 Ω/□. Our study shows that the properties of NiO thin films can be adjusted in a wide range by adjusting the O/Ar ratio in the sputtering process.     

Birefringent non-polarizing thin film design

Recently, there has been an increasing interest in theoretical analysis, design anddeposition of birefringent thin films[1—4]. With the development of deposition and meas-urement technique, it is possible to prepare birefringent optical component, such as elec-tro-optic tunable filters[5], antireflection coating[6], phase compensator[7] and polarizers[8].For isotropic thin film, plane waves at oblique incidence having transverse electric (TEor s) and transverse magnetic (TM or p) fields, res…