氮气流量和退火处理对射频磁控溅射氮掺杂二氧化钛薄膜性能的影响

常温下利用TiO2陶瓷靶采用射频磁控溅射法在玻璃衬底上制备了N掺杂TiO2薄膜。利用光学轮廓仪、X射线衍射仪(XRD)、X射线光电子能谱仪分析(XPS)和分光光度计等对薄膜的沉积速率、化学组成、晶体结构和禁带宽度进行了系统研究。结果表明:磁控溅射N2流量和退火处理对薄膜的微观结构和性能有重要的影响。退火前,薄膜由非晶态TiO2构成;退火后,薄膜呈现锐钛矿相和金红石相的混合相。随着磁控溅射系统中N2流量的增加,退火前禁带宽度从3.19eV减少到2.15eV;退火后,薄膜由非晶相TiO2组织转化为锐钛矿TiO2和金红石TiO2构成的浑河相组织,禁带宽度相比退火前的非晶相TiO2薄膜略有增加。     

Ti靶及TiO2靶溅射TiO2薄膜微观形貌、结构及光学性质研究

利用射频磁控溅射技术通过Ti靶及TiO2靶在氩氧气氛中同时溅射制备TiO2薄膜,并对所得的样品进行不同温度的退火处理。采用X射线衍射、扫描电子显微镜、拉曼光谱和吸收谱研究了不同的靶材及退火温度对TiO2薄膜晶体结构、微观形貌及光学性质的影响。结果表明:由于靶材的不同,Ti靶溅射时氧分压较低,造成薄膜中存在大量的氧缺陷,晶相发育不完善,颗粒相比TiO2靶溅射时较小,从XRD和拉曼光谱来看,Ti靶溅射得到的TiO2薄膜更有利于金红石相的形成。薄膜的透过率随退火温度的升高而降低,TiO2靶材溅射的薄膜的光学带隙随温度升高而明显降低,而Ti靶得到的薄膜的光学带隙对退火温度的依赖关系不明显。     

射频磁控溅射制备TiO2-xNx薄膜及其光催化特性研究

利用射频磁控溅射在玻璃衬底上制备了透明TiO2 和 TiO2-x Nx 薄膜样品,通过 X 射线衍射(XRD)、原子力显微镜(AFM)及 UV Vis分光光度计等测试手段表征了样品的结构、形貌和光催化性能。结果表明制备的薄膜为锐钛矿相结构。随着 N2/Ar气流比的增大薄膜样品出现新的物相,吸收光谱向可见光方向展宽,在N2/Ar流量比为 3∶100 时,制备的薄膜在可见光区具有很好的光催化性能。     

N掺杂TiO2纳米粉体的表面特性及可见光活性

旨在探究N掺杂纳米TiO2具有可见光活性的本质,采用XPS、ESR、XRD、SEM、DRS、SPS和PL分析技术对sol-gel法制备的未掺杂和N掺杂TiO2纳米粉体进行了对比研究,并以亚甲基蓝(MB)溶液在可见光下的光催化脱色评价其可见光活性。结果表明,N掺杂TiO2纳米粉体具有良好的可见光活性,未掺杂样品几乎没有可见光活性。N取代TiO2晶格中O形成了N─Ti─O和O─N─Ti键合结构产生杂质能级,N掺杂导致TiO2表面形成了大量束缚单电子的氧空位产生缺陷能级,二者协同作用致使带隙窄化,光吸收带边红移,产生可见光活性。N掺杂导致TiO2晶格中p-n结的形成及表面氧空位和表面羟基的增加均能促进光生e-/h+分离,有效抑制光生e-/h+复合,提高量子效率,进而提高其光活性。     

反应溅射TiO2-xNx膜的可见光吸收性能

用中频交流反应磁控溅射方法制备了N掺杂的TiO2薄膜.利用光电子能谱(XPS)对薄膜的成分进行了分析,并研究了薄膜的可见光吸收性能.结果表明:反应气体中N2的质量分数是影响薄膜中Ti-N键的主要因素;在N2气氛中380℃退火有利于提高N掺杂的含量;厚度的增加使薄膜的吸收性能在紫外到可见光区都有提高;含N量为1.5%的TiO2-xNx薄膜吸收限由TiO2薄膜的387nm红移至441nm.     

不同浓度的Si掺杂β-Ga_2O_3薄膜的制备及研究

本文采用射频磁控溅射法在Si (100)和石英衬底制备纯β-Ga_2O_3和不同浓度的Si掺杂β-Ga_2O_3薄膜,并且研究Si掺杂对β-Ga_2O_3薄膜结构、表面形貌和光学性质的影响。X射线衍射(XRD)测试结果表明,Si掺杂β-Ga_2O_3薄膜都未出现新的衍射峰,随着Si浓度的增加,β-Ga_2O_3的特征峰(111)逐渐向大角度方向移动。X射线光电子能谱(XPS)表明β-Ga_2O_3薄膜中成功掺入了Si元素。本文使用原子力显微镜(AFM)表征薄膜的表面形貌,结果表明薄膜表面的粗糙度随着Si浓度增加呈现单调递增的趋势。紫外-可见光(UV-visible)透射光谱表明薄膜均在可见光波段具有高透光率,薄膜的光学带隙随Si掺杂浓度的变大而变大。Si掺杂实现了β-Ga_2O_3的带隙可调,表明Si是一种有潜力的掺杂剂。     

硫掺杂TiO2/Ti光电极制备及其可见光光电催化性能

为了提高TiO2/Ti光电极在可见光下的光电催化活性,采用阳极氧化法制备了一种新型的硫掺杂TiO2/Ti光电极.采用扫描电子显微镜、X射线衍射、X射线荧光光谱等技术对光电极进行了表面形貌、结晶形态、晶粒尺寸、硫的掺杂量和价态以及吸光性能表征.研究表明:硫掺杂TiO2/Ti光电极的最佳制备条件为:成膜电压160V、电流密度100mA/cm2、Na2SO3质量浓度750mg/L;所制备的光电极具有良好的光电催化氧化降解邻苯二甲酸二甲酯活性,并能有效地矿化其中间产物;与TiO2/Ti电极相比,硫的掺杂可以显著提高其在可见光下的光电催化性能.     

直流射频耦合制备微纳结构AZO薄膜及其性能研究

采用直流射频耦合磁控溅射法结合线棒刮涂法在玻璃衬底上室温生长微纳结构铝掺杂氧化锌(AZO)薄膜,底层AZO薄膜射频功率占比从50%调整到90%。通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)、霍尔效应测试系统、紫外可见分光光度计、光电雾度仪重点研究了AZO薄膜的表面形貌、晶体结构、电学性能和光学性能。研究结果表明,提高底层AZO薄膜射频功率占比对微纳结构AZO薄膜光电性能有显著的影响,底层AZO薄膜射频功率占比80%时薄膜表现最低电阻率5.32×10~(-4)Ω·cm,可见光波段平均光学雾度36.3%。随着底层AZO薄膜射频功率占比的增加,薄膜表面形貌、生长形态和结晶性能发生较大变化,并得到具有陷光作用且光电性能优良的微纳结构AZO薄膜。     

氟碳铝单板表面溶胶凝胶法制备N-TiO2薄膜的组构及光催化性能

为了实现氟碳铝单板在太阳光下的自清洁,以钛酸丁酯为钛源、尿素为氮源,采用溶胶凝胶法在氟碳铝单板表面低温制备了N掺杂的Ti O2(N-Ti O2)薄膜,并制备了纯Ti O2薄膜进行比较。采用扫描电镜(SEM)、X射线衍射仪(XRD)、红外光谱仪分析了薄膜的形貌、物相及分子结构;用紫外-可见光分光光度计测定薄膜的紫外-可见光吸收波谱,并在可见光下分析了薄膜对亚甲基蓝溶液的光催化降解性能。结果表明:N掺杂能抑制Ti O2由锐钛矿相向金红石相转化,N-Ti O2薄膜表面光滑平整,没有孔洞和裂纹,在可见光下表现出了显著的光催化活性。     

中频交流反应溅射TiO_2薄膜的制备及性能研究

利用中频交流磁控溅射设备用金属Ti靶制备出了TiO2 薄膜。用椭偏仪测试了TiO2 薄膜的厚度和折射率 ,用俄歇电子能谱、扫描电子显微镜、X射线衍射仪和紫外及可见光分光光度计分别测试了TiO2 薄膜的表面成分、表面形貌、晶体结构及其紫外及可见光透射谱 ,并初步探讨了工艺因素对薄膜性质的影响。实验结果表明 :所制备的氧化钛薄膜O/Ti比符合化学计量比 ,而且O/Ti比随O2 流量的变化不大 ;TiO2 薄膜结构主要为锐钛矿型 ;薄膜表面致密 ;TiO2 薄膜光学性能较好 ,透射比较高 ;但O2 流量较低时透射比明显下降。     

氮掺杂对SnO2薄膜光电性能的影响

SnO2薄膜具有透明导电的特性,因而被制成透明电极而广泛应用于平板显示器和太阳能电池中。研究表明,经掺杂的薄膜具有更优异的光电性能,然而传统的掺杂元素Sb,Te或F较为昂贵且有毒性,因此,掺氮将有望解决上述问题。本文利用反应射频磁控溅射法制备出不同氧含量的SnO2以及氮掺杂SnO2薄膜,并分析了薄膜的形貌结构及光电性能。结果表明:薄膜沉积过程中氧分压和氮掺杂对薄膜性能影响较大。在SnO2薄膜中,晶粒呈包状形态,随着氧分压的增加,晶粒取向从(101)转向(110)方向,晶粒尺寸逐渐变小,可见光透光率提升到80%以上,光学带隙增加到4.05 eV;在氮掺杂SnO2薄膜中,晶粒呈四棱锥形态,晶粒取向为(101)方向,随着氧分压的增加,可见光的透过率同样提升到80%以上,光学带隙增加到3.99 eV。SnO2薄膜和氮掺杂SnO2薄膜的电阻率最低分别达到1.5×10-1和4.8×10-3Ω.cm。     

Chemical vapour deposition of nitrogen-doped titanium dioxide thin films

Nitrogen-doped titanium dioxide is often considered as a promising nanomaterial for photocatalytic applications. Here we report the first results of a study of APCVD of N-doped TiO2 thin films prepared with the use of ammonia as a source of nitrogen and titanium tetraisopropoxide (TTIP) as a source of Ti and O atoms. The obtained films were analyzed with X-ray diffraction, infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, UV-Vis spectroscopy, and ellipsometry. It was found that the film growth rate in the TTIP-NH3-Ar reaction system varied insignificantly with substrate temperature in the range of 450,..., 750 degrees C and did not exceed 4.4 nm/min. Yellow and orange layers with nitrogen content of about 7.6% were formed at the deposition temperature higher than 600 degrees C. The results of the structure analysis of the deposited films showed that addition of ammonia led to stabilization of the amorphous phase in the films. The effect of ammonia on optical and photocatalytic properties was also considered.     

可逆光致变色的Ag@TiO2纳米复合膜（英文）

为了防止活性等离子体对下层银膜的破坏,采用多晶TiO2半导体烧结靶,使用射频磁控溅射方法在纯氩等离子气氛中制备了大面积均匀的TiO2、Ag@TiO2薄膜。为了了解其结构与电子和光学特性间的相互作用,对TiO2和TiO2/Ag/TiO2样品的制备参数(如射频功率、总压和直流电压的共同影响)进行了研究。采用掠入射X射线衍射、紫外可见吸收、拉曼光谱等技术研究了根据其结构调整光学性能的可能性。结果显示,沉积的TiO2薄膜具有与在氩气和氧气混合气氛中沉积所得薄膜相似的形貌、电子和光学特性、能隙带宽和晶相;且所制备的Ag@TiO2薄膜银具有可逆的光致变色特性,可作为智能窗、多波长光存储器和可擦写高密度电子纸使用。     

Modulation of microstructure and interface properties of co-sputter derived Hf<Subscript>1−x</Subscript>Ti<Subscript>x</Subscript>O<Subscript>2</Subscript> thin films with various Ti content

Hf_1?xTi_xO₂ dielectric thin films were deposited on Si (100) substrates by RF reactive co-sputtering with the variation in RF power of Ti target. The compositional, morphological, structural and optical properties of Hf_1?xTi_xO₂ films with various Ti concentration were systematically investigated by X-ray photoelectron spectroscopy (XPS), Field emmission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectroscopy techniques respectively. The electrical properties of the co-sputtered thin films were studied by capacitance–voltage and current density–voltage measurements. The XRD study has shown the enhancement in the the crystalline property of Hf_1?xTi_xO₂ film up to 60 W of Ti target power and amorphous like behaviour was observed for higher RF power. The Ti content in Hf_1?xTi_xO₂ was calculated from the XPS measurements, where the Ti content was found to be increased with rise in RF power. FESEM micrographs depict the increase in grain size upto the RF power 60 W. The Raman spectrum of the Hf_1?xTi_xO₂ film has shown that the major generated phase was titanium-substituted monoclinic phase of HfO₂. The flatband voltage (V_fb) and oxide charge density (Q_ox) were extracted from the high frequency (1 MHz) C–V curve. The D_it has a minimum value for the film deposited at 60 W RF power of Ti target. The leakage current density of the Hf_1?xTi_xO₂ films was found to be minimum for the RF power 60 W.     

Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm³ with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.     

Ti/TiO2多层膜的光电性能研究

用真空蒸发和自然氧化法在玻璃基底上制备了Ti／TiO2多层膜，并检测了薄膜的光电性能。电性能检测表明Ti／TiO2多层膜存在类负阻效应，多层膜的层间的类负阻效应比表面的更明显，薄膜的层间电阻率高于表面电阻率；用分光光度计测得试样退火前后的透射谱；用X射线衍射仪和扫描电镜检测了Ti／TiO2多层膜的晶体结构和表面形貌。     

掺氮ZnO薄膜的制备及其光电性能

在保持氩气流量一定,通过改变O2与N2的流量比,以高纯锌为靶材,通过射频磁控溅射技术在石英玻璃衬底上生长氮掺杂ZnO薄膜。采用XRD、荧光光谱、扫描电镜及皮安表对薄膜的晶体结构、光学性能、表面和截面形貌及电学性能进行了表征。结果表明：氮掺杂ZnO薄膜仍具有高度的c轴择优取向;氮以受主杂质形式存在可有效降低薄膜的电阻率;薄膜中氮含量的相对变化是影响ZnO薄膜晶体质量和光电性质的重要因素。     

Nitrogen-doped TiO2 nanotube array films with enhanced photocatalytic activity under various light sources

Highly ordered nitrogen-doped titanium dioxide (N-doped TiO(2)) nanotube array films with enhanced photocatalytic activity were fabricated by electrochemical anodization, followed by a wet immersion and annealing post-treatment. The morphology, structure and composition of the N-doped TiO(2) nanotube array films were investigated by FESEM, XPS, UV-vis and XRD. The effect of annealing temperature on the morphology, structures, photoelectrochemical property and photo-absorption of the N-doped TiO(2) nanotube array films was investigated. Liquid chromatography and mass spectrometry were applied to the analysis of the intermediates coming from the photocatalytic degradation of MO. The experimental results showed that there were four primary intermediates existing in the photocatalytic reaction. Compared with the pure TiO(2) nanotube array film, the N-doped TiO(2) nanotubes exhibited higher photocatalytic activity in degradating methyl orange into non-toxic inorganic products under both UV and simulated sunlight irradiation.     

氮掺杂TiO2光催化杀菌性能的研究

以廉价的TiOSO4为原料,通过水解法制备正钛酸前驱体,然后向正钛酸前驱体中加入尿素作为氮源,经煅烧制备氮掺杂纳米TiO2,采用X射线衍射、紫外-可见吸收光谱和扫描电镜等方法对制备的样品进行了表征,研究了不同N/Ti配比、煅烧温度、TiO2浓度、细菌浓度对光催化杀菌的影响.结果表明,制备的样品均为锐钛晶型,氮掺杂使TiO2在可见光区的光吸收明显增强;煅烧温度和N/Ti配比对光催化杀菌效果影响显著;当TiO2的质量浓度为1.5g/L时杀菌效果最好;当细菌浓度低于106细胞/mL时,氮掺杂TiO2的杀菌率可达90%以上.