ISAR欺骗干扰仿真与效果评估研究

研究了欺骗性干扰条件下的逆合成孔径雷达(ISAR)干扰效果评估方法。依据宽带成像信号模型进行欺骗干扰信号仿真,对干扰前/ 后的数据分别进行ISAR成像处理,计算图像的量化指标并结合主观评估,对ISAR干扰效果进行评估。仿真实验表明:相关系数对欺骗干扰效果评估较为有效,其他指标如熵、均值、标准差、等效视数等可以当作辅助信息作为评判参考。     

基于GPU的ISAR实时干扰效果评估

针对逆合成孔径雷达(ISAR)在干扰试验中的干扰效果评估主要通过相关领域专家进行事后评估,存在评估时效性差,且评估标准比较模糊、主观的问题,提出一种利用图形处理器(GPU)实现ISAR实时干扰效果评估的方法。首先利用GPU的并行阵列计算能力将成像处理过程并行化,实时得到高分辨率图像;然后处理图像,提取ISAR图像特征和目标一维像、二维像特征参数,对干扰效果进行量化评估。该方法具有实时、客观、定量的特点,可多角度评估被试装备的干扰效果,对于实际应用中ISAR干扰效果评估有重要意义。     

基于灰度共生矩阵的SAR图像压制式干扰评估

压制式干扰效果评估一直是SAR对抗评估中的难点,大多数评估方法是从灰度值本身的变化来评估干扰的好坏,并没有从SAR图像具有的纹理特征角度分析干扰效果。针对此问题,提出了一种基于灰度共生矩阵的SAR图像评估方法,加入射频噪声干扰,利用灰度共生矩阵得到的纹理特征的不匹配度来评估压制式干扰效果。仿真实例表明了方法能够定量地描述压制式干扰的效果。     

基于光斑与图像特征的激光干扰效果评价方法

提出了一种基于光斑与图像特征的激光干扰效果评 估方法。用激光光斑中心相对于目标中心的距离反 映光斑的分布特征变化;用图像稀疏表示特征矩阵的变化情况来反映干扰前后图像的全局特 征变化;用图像边缘清 晰度的变化情况反映干扰前后图像的局部特征变化;综合干扰前后图像中的光斑与图像特 征的变化来评估激光干 扰效果。激光干扰实验结果表明,与传统的评估方法均方误差(MSE)和图像结 构相似度(SSIM)相比,提出的基于光斑与图像特征的评估方法对 不同激光功率、不同照射位置和不同背景强度下的干扰图像都给出了合理的评估结果,能够 克服背景强度不一致和 光斑位置变化对评估结果的影响,实现了对激光干扰效果客观、准确的评价。     

一种ISAR图像性能定量评估方法

为便于ISAR图像的后续处理和应用,急需建立一种客观有效的ISAR图像性能定量评估方法。综合点目标评估指标、面目标评估指标、信息熵和对比度等多种客观评估指标,提出一种基于线性加权和准则的ISAR图像性能评估模型。通过仿真实验,对各客观评估指标对于带宽、成像积累脉冲数和信噪比等典型客观因素变化的敏感度进行分析。根据敏感度定量分析结果,确定各评估指标在模型中所占的权重系数,建立综合的ISAR图像性能定量评估模型。实测数据处理结果验证了本文所提方法的有效性。     

一种新的ISAR干扰效果评估指标

由于逆合成孔径雷达(ISAR)不同于常规雷达,一些用于评估常规雷达干扰效果的方法不适用于ISAR.从信息论的角度出发,将交互熵引入到ISAR干扰效果评估中,针对其不足,提出了对称交互熵的概念,并从理论上证明了对称交互熵是一种距离测度,从而建立了以对称交互熵为指标的评估模型.最后,针对射频噪声干扰和噪声调频干扰两种典型的压制性干扰样式,对ISAR进行了干扰仿真,并应用该方法从定量的角度对ISAR干扰效果进行了评估,得出了与定性评估相同的结论.同时结果也证明了该指标的有效性和可行性.     

一种基于CFAR检测和密度聚类的ISAR图像预处理方法

目标逆合成孔径雷达(ISAR)像通常受各种噪声的影响,这些噪声使ISAR图像质量下降,严重影响了后续的特征提取和目标识别应用。提高图像质量,减少噪声的干扰成为ISAR目标识别应用中的重要步骤。提出了一种基于恒虚警检测和密度聚类的方法抑制ISAR像的斑点干扰和横条纹干扰,在保证干扰抑制效果的同时相比于传统方法可以更有效地保留目标中的细节信息。提取了图像面积、长度、多普勒扩展作为ISAR识别特征矢量,外场实测数据实验表明,提出的预处理方法有效地抑制了图像中的干扰成分,保留了更多图像细节,有效地提高ISAR识别特征的稳定性。     

基于变化检测的机场毁伤评估算法

提出了一种基于遥感图像变化检测的机场毁伤效果评估算法,该算法由图像预处理、兴趣区域划定、毁伤特征提取和分级评估4个模块组成。首先对图像进行直方图规定化,提高图像局部对比度,并采用Hough变换提取机场区域,抑制掉过多的背景干扰;然后利用变化检测参数指标对目标特征进行描述,实现毁伤信息的有效提取;最后建立整体的特征向量"相似度",几何、纹理特征"二次距离",设计分级评估准则。仿真结果表明,该算法有效地实现了对机场目标毁伤效果的评估,同时经过适当扩展和改进,可用于各种人造目标毁伤效果的评估。     

基于特征矩阵匹配的干扰效果评估方法

针对相关性评估准则在实际应用中存在敏感于目标旋转等问题,提出了一种新的基于特征矩阵匹配的干扰效果评估方法。该方法不是直接计算干扰前后图像的相关系数,而是经过图像变换得到一个具有旋转不变性的特征矩阵,然后计算特征矩阵的相关系数,其结果能够反映图像受干扰后失真的程度,而且评估结果具有客观、定量和归一化的优点。最后就射频噪声干扰和噪声调频干扰两种噪声干扰样式进行了干扰仿真,仿真结果表明了该方法的有效性和可行性。     

基于多特征组合的彩色遥感图像分类研究

为了解决利用单一特征对彩色遥感图像进行分类效果不理想、普适性不强等问题,提出了一种基于颜色和纹理特征组合的支持向量机彩色遥感图像分类方法。该方法尝试将彩色遥感图像的颜色信息和纹理信息相结合作为支持向量机算法分类的特征向量,据此对遥感影像进行分类,并进行了实验验证。结果表明,颜色和纹理特征组合的支持向量机分类方法能够取得较高的分类精度,其分类效果优于传统的单一颜色或纹理特征分类,是一种有效的彩色遥感图像分类方法。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.