Study on BaO-Sm2O3-TiO2 Microwave Dielectric Ceramics Doped with Bismuth and Zinc

BaO-Sm2O3-TiO2 microwave dielectric ceramics doped with Bi and Zn was studied. The experiment was based on BST microwave dielectric ceramics doped with Bi2O3, which is shown by Ba4(Sm1-yBiy)28/3Ti18O54. When y=0.15, ZnO was added and the effects of ZnO on this system were studied. The result shows that the dielectric characteristics of BST microwave dielectric ceramics are the most excellent when the content of ZnO is 3%, and the optimal sintering temperature is 1200 ℃.     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低     

Sm2O3掺杂BSTN陶瓷的制备与介电性能

采用溶胶凝胶法制备了Sm3+掺杂(Ba,Sr)TiO3/(Ba,Sr)Nb2O6复相陶瓷,XRD衍射表明,样品由钙钛矿相和钨青铜相组成,无其他杂相生成。随着Sm3+掺杂量的增加,样品衍射峰向小角度方向移动,表明掺杂的Sm3+取代了体系中Nb5+及Ti4+。检测了样品的介电-温度性能,结果表明,随着Sm3+掺杂量的增加,样品的介电常数及介电损耗都有所降低,当Sm3+掺杂量达到0.004时,样品介电损耗最低,再增加Sm3+的掺杂量,样品的介电损耗又出现增加的趋势。可以得出,适量Sm3+的掺杂可以有效降低样品的介电损耗。     

Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications

Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.     

CuTa_2O_6掺杂Ba(Zn_(1/3)Ta_(2/3))O_3基微波陶瓷烧结动力学及微波性能

结合烧结动力学模型和微观形貌观察,研究未掺杂和掺杂CuTa_2O_6的Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷在1 270~1 520℃温度范围内的致密化过程和烧结动力学机理。结果表明:在1 150℃以上烧结,随温度升高,Ba(Zn_(1/3)Ta_(2/3))O_3的烧结机制从体积扩散向晶界扩散转变。掺杂0.25%CuTa_2O_6可显著加快Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷的烧结致密化过程,在显著降低烧结温度的同时,可大幅缩短烧结时间并有效地促进B位的有序化。掺杂Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷在1370℃烧结12h即可获得96%的相对密度,在1 370℃烧结12 h后的介电常数(εr)和品质因数(Q·f)分别约为29.4和985 35;相比较,未掺杂Ba(Zn_(1/3)Ta_(2/3))O_3在1 520℃烧结12 h的εr和Q·f分别只有27.4和68 147。掺杂Ba(Zn_(1/3)Ta_(2/3))O_3陶瓷经1 520℃烧结48 h的εr和Q·f分别约为28.2和103 131。     

Dielectric Properties of CeO2 -Doped Ba( Zr, Ti)O3 Ceramics

The influence of additive amount of CeO2 on the properties of Ba(Ti, Zr)O3 (BTZ) capacitor ceramics prepared using conventional solid-state reaction method was investigated. The dielectric constant(ε) increases to a maximum when w( CeO2 ) is about 1.0% and then decreases again at higher doping concentration of CeO2. The dielectric constant gets a maximum while w ( CeO2 ) is about 1. 0%, and the dielectric loss is minimum while w ( CeO2 ) is0.5 %. CeO2 can decrease the curie temperature, widen the εr-T peak and decrease the absolute value of dielectric constant temperature coefficient. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed. The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution , shifting curie temperature peak effect, segregating in crystal boundary , and impeding grain growth.     

Dielectric and piezoelectric properties of （Li, Ce） modified NaBi5Ti5O18 composite ceramics

Nominal (Li0.5Ce0.5)x(Na0.5Bi0.5)(1-x)Na0.5Bi4.5Ti5O18 composite ceramics were fabricated using conventional solid-state reaction method. The coexistence of bismuth layer-structured phase and perovskite phase was determined in these ceramics using XRD technique. At room temperature, the x=0.11 sample showed the largest piezoelectric constant, d33, of about 26.5 pC/N and the largest electromechanical coupling factor, kt, of about 30%. Even after annealing at 500 ℃, the value of d33 was still about 19 pC/N, in x=0.08-0.11 samples. Moreover, these composite ceramics showed low temperature coefficients of dielectric constant and high electrical resistivity in the temperature region of 450-550 ℃. These results indicated that (Li, Ce) modified NaBi5Ti5O18 composite ceramics were promising piezoelectric materials for high-temperature applications.     

Microstructure and microwave dielectric properties of Ba6-3xSm8+2xTi18O54 ceramics with various BaxSr1-xTiO3 additions

The Ba6-3xSm8+2xTi18O54 (x=2/3) microwave dielectric ceramics were prepared by traditional solid sate reaction technique. The ex-periment was based on the Ba6-3xSm8+2xTi18O54 (BST) microwave dielectric ceramics doped with a certain amount of Bi2O3, then the effects of BaxSr1-xTiO3 additives on the structure and microwave dielectric properties of Ba6-3xSm8+2xTi18O54 ceramics were investigated using X-ray diffraction and scanning electron microscopy. In this study, the small amount substitution of Sr for Ba was effective for the microwave dielec-tric properties of BST, especially the τf could be tuned to near zero. The result showed that the BST possessed excellent dielectric properties when the addition of Bi2O3 and BaxSr1-xTiO3 was 1 wt.% respectively: εr=79.6, Q?f=10789 GHz, τf=-1.5 ppm/oC.     

Photoluminescence properties of（Gd1-xEux）Ba3B9O18 red emitting phosphors

Eu3+-activated GdBa3B9O18 phosphors were prepared by solid-state reaction at high temperature, and their photoluminescence (PL) properties were investigated. (Gd1-xEux)Ba3B9O18 formed solid solutions in the range x=0-1.0. The optical band gaps calculated from absorption spectra were 5.54 eV for GdBa3B9O18 and 5.17 eV for EuBa3B9O18. Unactivated GdBa3B9O18 exhibited a typical characteristic excitation and emission of Gd3+ ion. The (Gd1-xEux)Ba3B9O18 phosphors showed well-known Eu3+ excitation and emission. The energy transfer from Gd3+ to Eu3+ was verified with PL spectra. The dependence of PL intensity on Eu3+ concentration was also studied in detail. The luminescence decay measurements indicated that the lifetimes of 5D0→7F1 transition of Eu3+ were in the order of millisecond.     

X-Ray Diffraction Study of Ba6-3x (Eu1/2 Nd1/2)8+2x Ti18O54 Microwave Dielectric Ceramics Prepared by Sol-Gel Method

Perfectly-sintered Ba_6-3x (Eu_1/2 Nd_1/2)_8+2x Ti₁₈O₅₄ (x = 2/3) (BENT) microwave dielectric ceramics was fabricated successfully with BENT powders prepared by Sol-Gel process. The lattice parameters of BENT ceramic powders were determined by method of X-ray diffraction in ordinary temperature. Orthorhombic lattice type (space group Pbam) of BENT in ordinary temperature was determined, its pattern was indexed and its polycrystalline X-ray diffraction data were listed. By analysis of its X-ray diffraction data, it could be concluded that Eu and Nd coexisted in the single phase and could not be distinguished in BENT ceramics. The increasing dielectric losses of BENT could be explained basically by the disorder of Eu ions and Nd ions occupied in Al-sites.     

掺杂不同质量分数Y_2O_3、MgO对Al_2O_3陶瓷显微结构及介电性能的影响

利用放电等离子烧结技术制备了不同质量分数Y_2O_3单独掺杂及不同质量分数Y_2O_3、MgO共同掺杂的Al_2O_3陶瓷,研究了烧结助剂掺杂质量分数对Al_2O_3陶瓷显微结构及介电性能的影响。结果表明,孔隙率是影响Al_2O_3陶瓷介电性能的主要因素;单独掺杂质量分数为0.25% Y_2O_3时,Al_2O_3陶瓷得到最优的介电性能,介电常数(ε_r)为9.5±0.2,介质损耗(tanδ)稳定在10~(-3)数量级以内;同时掺杂Y_2O_3和MgO能进一步改善其介电性能,当两者质量分数均为0.25%时,得到最优值,介电常数(ε_r)为10.3±0.2,介质损耗(tanδ)稳定在8×10~(-4)以下。     

MnO_2掺杂BaTi_4O_9陶瓷微波介电性能研究

采用传统固相反应法合成BaTi_4O_9粉体,复合掺杂质量分数为0~0.16%MnO_2,在空气气氛下常压烧结制备BaTi_4O_9陶瓷。研究了MnO_2对BaTi_4O_9陶瓷的相组成、微观形貌、烧结特性及介电性能的影响。X射线衍射分析和扫描电子显微镜观察表明,Mn完全固溶到BaTi_4O_9陶瓷中;随着MnO_2掺杂量的增加,晶粒更加均匀,BaTi_4O_9陶瓷更加致密,介电常数略微降低,品质因数和谐振频率温度系数先显著提高继而降低;MnO_2掺杂BaTi_4O_9陶瓷发生Ti位取代,高温烧结时在一定程度上抑制了Ti~(4+)还原为Ti~(3+),从而改善BaTi_4O_9陶瓷微波介电性能。在烧结温度1250℃,保温时间4 h,掺杂MnO_2质量分数为0.08%时,BaTi_4O_9陶瓷微波介电性能最优,介电常数(εr)为34.56,品质因数(Q·f,中心频率5 GHz)为49097,谐振频率温度系数(τ_f)为14.997×10~(-6)/℃,相对密度最大,达97%。     

锂空气电池固体电解质Li_(1+x)Al_xTi_(2-x)(PO_4)_3的制备研究

以Li_2CO_3、Al_2O_3、TiO_2、NH_4H_2PO_4为原料,采用固相烧结法制备锂空气电池固体电解质Li_(1+x)Al_xTi_(2-x)(PO_4)_3(LATP),研究了不同x值、不同烧结温度对电解质性能的影响。通过X射线衍射仪(XRD)、扫描电镜(SEM)和电化学阻抗谱(EIS)对所制备电解质的结构与性能进行表征。结果表明在x值等于0.2时得到纯相的LATP,最佳烧结工艺是350℃保温2 h,600℃保温2 h,1 000℃保温8 h,室温下的电导率为4.89×10~(-5)S/cm。     

单相Sm掺杂BaTiO3陶瓷的结构研究

采用高温固相反应法,在1 400℃/12h烧结条件下制备了具有Ti空位补偿的Ba1-xSmxTi1-x/4O3(BST;x=0.02~0.07)陶瓷。利用XRD对BST陶瓷的晶体结构进行表征,并在532和638nm两种激发波长下对其进行拉曼光谱测试。结果表明:当x≤0.07时,所有的BST陶瓷均表现为单相钙钛矿结构,并且随着Sm含量的增加,其晶体结构由四方相(x≤0.06)转变为立方相(x=0.07);不同激发波长下的拉曼测试证实高频谱来自稀土Sm^3+的荧光效应。     

Dielectric Properties of Dy2O3 -Doped ( Ba, Sr) TiO3 Ceramics

The effects of Dy2O3 doping on the dielectric properties of (Ba, Sr)TiO3 series capacitor ceramics prepared using solid-state reaction method were studied. With the increasing of Dy2O3 additive , the dielectric constant (ε) of materials increases to a maximum when w(Dy2O3 ) is about 0.5% ,while the dielectric loss(tanδ) decreases. The BST ceramics with highε ( = 5245 ), low tanδ ( = 0. 0026 ) and high DC breakdown voltage ( = 5.5 mV ·m-1 ) were obtained. The influencing mechanism of Dy2O3 on the dielectric properties of (Ba, Sr)TiO3 ceramics was studied, thus providing the basis for preparation of capacitor ceramics.     

低磁矩大功率复合微波石榴石铁氧体材料高频软磁特性的研究

用传统氧化物法制备化学式为Y3-a-2bGda-xCm2b xFe5-b-c-d-0.5xV6 0.5xIncMndO12的复合石榴石铁氧体，研究了不同Gd含量对其温度稳定性的影响。结果发现，在考察的60—100℃温度范围内，x=O．1的样品稳定性最好。实验还表明，球磨弥散剂对样品的性能也有较大影响。     

Formation and Characterization of Li0.24 ＋ 2x La0.59-x Mx TiO3-LaPO4 （M = K, Na） System

Ionic conductingsolid materials has received con-siderable attention in the last few years due to theirpotential utilityin high energy batteries and other elec-trochemical devices . Several systems of lithium fastion conductors ,such as γ-Li3PO4-type sol…     

Effect of La2O3-Dopant on Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb2O5-TiO2 System Ceramics

With the development of microwave integratedsystem for wireless communication, requirements ofthe microwave device are combined with high dielec tric constants (εr), low dielectric losses (Q = 1/tanδ) and near zero temperature coefficient for stabili ty and frequency selectivity[1,2]. But it is hard to findmaterials that satisfy all above mentioned requiredcharacteristics. In general, a ceramic with a high di electric constant has a larger positive temperature coef fi…     

Tracing mechanism of optically and thermally stimulated luminescence in Lu_2O_3:Tb,M(M=Hf,Zr,Ti)ceramic storage phosphors

A series of energy storage phosphors,Lu_2O_3:Tb,M(M=Hf,Zr,Ti),were investigated by means of photoand thermoluminescence techniques to compare the effect of the co-dopant from the same group of periodic table of elements on charge carriers trapping capability and trap parameters.Most of the investigated processes were tracked individually for the Tb~(3+) in the two different metal sites offered by the Lu_2O_3 host-noncentrosymmetric C_2 and centrosymmetric C_(3i).It is proved that both Tb~(3+)ions participate in hole trapping and electrons are immobilized in traps whose depths are defined by the codopant.Deepest traps,～1.79 eV,appear upon Ti addition,while Zr and Hf generate traps of very similar,～1.40-1.44 eV,depths.The stored energy may be released not only by means of thermal stimulation but also upon the impact of optical photons.Light from the 390-430 nm range of wavelengths was found the most efficient in the latter process.Also deep red radiation of 780 nm releases most of the trapped electrons in Zr/Hf co-doped ceramics but is much less effective in the case of Tb,Ti material.Consistent scheme of electronic levels engaged in charge carriers trapping and subsequent generation of thermoand optically stimulated luminescence was constructed.     

Preparation of Solid Solutions [Li3xLa0.67-xYyTi1-2yNbyO3] and Its Lithium-ion Conductivity

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