溶胶-凝胶法制备铜掺杂氧化锌薄膜的光学特性

设计了一种新的能量回收接口电路——双中间电容回收(DICH)接口电路,该电路由2个LC振荡电路、一个buck boost转换器和2个中间电容组成。完成了在恒定激振位移情况下该电路的回收功率的理论分析和计算。利用Multisim仿真软件对标准电路、同步电荷提取(SECE)接口电路、并联 同步开关电感回收 (SSHI)、串联 SSHI和DICH接口电路进行了仿真比较,结果表明,双中间电容回收(DICH)接口电路在最优负载时的最大回收功率仅小于并联 SSHI接口电路,约是SECE接口电路的2倍,且具有与SECE接口电路同样的特性,即回收功率与负载无关。     

DICH压电能量回收接口电路设计

设计了一种新的能量回收接口电路——双中间电容回收(DICH)接口电路,该电路由2个LC振荡电路、一个buck-boost转换器和2个中间电容组成。完成了在恒定激振位移情况下该电路的回收功率的理论分析和计算。利用Multisim仿真软件对标准电路、同步电荷提取(SECE)接口电路、并联-同步开关电感回收(SSHI)、串联-SSHI和DICH接口电路进行了仿真比较,结果表明,双中间电容回收(DICH)接口电路在最优负载时的最大回收功率仅小于并联-SSHI接口电路,约是SECE接口电路的2倍,且具有与SECE接口电路同样的特性,即回收功率与负载无关。     

SCEI能量回收接口电路的设计

基于压电效应的能量回收接口电路是能量回收系统的重要组成部分,经典的接口电路有标准接口、同步电荷提取电路(SECE)、并联同步开关电感电路(Parallel-SSHI)、串联同步开关电感电路(Series-SSHI)4种。提出并设计了一种新的接口电路——同步电荷提取和翻转电路(SCEI)接口电路,完成了该接口电路在恒定激振位移情况下回收功率的理论分析和计算,并利用电子仿真软件Multisim对SCEI和4种典型接口电路的回收功率进行了仿真和比较。结果表明,SCEI接口电路性能优越,其回收功率约是SECE电路的1.5倍,且与负载无关。     

基于耦合电感的压电能量采集电路设计与仿真

利用压电材料的环境振动能量收集技术具有能量密度大,无电磁干扰,较易收集的特点,该文提出一种自供电式压电振动能量采集电路,即基于耦合电感的同步电荷提取和电压翻转电路(SCET&VII),利用电子仿真软件LTspice对标准能量采集(SEH)电路、同步电荷提取(SECE)电路和SCET&VII进行仿真分析和对比。结果表明,在相同振动激励条件下,SCET&VII接口电路的负载取用功率是SEH的2.65倍、SECE的1.76倍,且功率输出不受负载影响,同时实现了能量收集中的开关动作能量自给。     

压电能量收集接口电路的设计与仿真

为了给无线传感器网络节点提供稳定、高效且长期的能量供给,该文提出了一种基于增强型同步电荷提取电路的压电能量收集接口电路(ESECE)。利用Multisim电路仿真软件对增强型同步电荷提取电路进行仿真,并与标准压电能量收集接口电路(SHE)和同步电荷提取电路(SECE)进行对比分析。实验结果表明,在相同激励条件下,ESECE比SECE的输出功率提高了近30%,最大输出功率达到190μW,同时还保证了输出功率与负载电阻的无关性。     

一种高效压电式能量回收接口电路的优化设计

阐述了几种压电发电机接口电路的工作过程和原理,包括标准能量回收电路,同步电荷提取电路,并联同步开关电感电路,串联同步开关电感电路和双同步开关电感电路,并从阻抗匹配角度分析了以上五种电路输出最大功率时的最佳负载阻抗范围。为了最大化地回收自然界中的振动能量,以双同步开关电感电路为例,针对其控制过程复杂且要求精确的特点,提出了一种具体的硬件电路实施策略并进行了Pspice仿真。仿真结果与理论值吻合。     

一种压电振动能量回收电路

为了提高压电式振动能量回收系统的能量回收能力和解决在负载变化使能量回收效率变差的问题,以悬臂梁式压电振动发电系统为例,提出了一种高效的压电振动能量收集电路设计方案,即并联型双同步开关电感接口电路,可将压电梁转换振动能量得到的电能高效地储存到电容中。实验结果表明,压电梁在频率为38.4Hz、加速度有效值为0.035m/s2振动激励下工作时,给出的并联双同步开关能量回收(P-DSSH)接口电路可释放的瞬时功率达0.25mW,是全桥整流接口电路(SEH)最优功率的5.8倍,是并联同步开关电感(P-SSHI)接口电路可释放的瞬时功率的2.2倍,是LTC3588-1电路可释放的瞬时功率的1.27倍,且其工作不受负载变化的影响。     

基于同步电荷提取的压电能量俘获电路设计

利用压电振动能量收集技术具有的力-电耦合效应高,无电磁干扰,机构简单等特点,该文提出了一种对称式自供电同步电荷提取电路(SSP-SECE),使用互补三极管实现同步开关控制,通过导向二极管与检测电容可实现峰值自检测。使用Multisim软件建模仿真测试了电路方案的合理性,实验验证了电路的有效性。实验结果表明,采用优化设计的SSP-SECE接口电路使负载电阻功率比标准能量采集电路高约4.23倍,相对于SECE电路整体提升了23.02%。     

基于绝热逻辑的低功耗乘法器电路设计

基于绝热开关理论的能量回收逻辑与传统的静态CMOS逻辑相比,能够大大减少电路的功率消耗。这里介绍了一种使用单相正弦电源时钟的能量回收逻辑,分别用静态CMOS逻辑和这种能量回收逻辑设计,并仿真了一个两位乘法器电路,比较了这两种电路的性能。研究表明,采用能量回收逻辑设计的乘法器显著降低了电路的功率消耗。     

一种高效压电能量收集与管理电路

根据压电元件的特性提出一种压电能量收集与管理电路。它包括一个基于电感的并联同步开关收集电路( P-SSHI )、一个控制电路和一个DC-DC电路。该P-SSHI电路只需要两个开关,仿真的结果显示其收集的能量相比传统的AC-DC电路提高5倍以上;DC-DC电路工作在电流断续模式下(DCM),这有利于降低功耗,提高轻载效率,且仿真结果的输出电压为3.3 V,电压精度为0.02%。这种压电能量收集与管理电路能够为微功率设备提供稳压。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.