一种新型板件冲压连接技术及应用

随着市场竞争的激烈化,在生产优质廉价产品的同时,我们越发感觉到传统的冲压及点焊等连接方法。存在着经济上和技术上的不足,本文介绍了德国TOX公司的一种全新的冲压连接技术及其在实际生产中的应用。     

激光拼焊门内板冲压有限元仿真及实验研究

汽车工业一直致力于在不降低轿车结构稳定性的同时减轻车重，最成功的一项新技术是激光拼焊技术的应用。激光拼焊技术具有显著的特点及优势在汽车白车身内部结构件中得到了广泛应用，其中激光拼焊门内板以具有显著减重的优势在国内汽车厂各种新车型中得到推广。而门内板是典型的汽车覆盖件，形状复杂，对激光拼焊门内板的典型特征进行了分析与抽取，进行了激光拼焊门内板比例件的实验与研究。对激光拼焊门内板冲压过程建立了有限元模型，基于有限元数值仿真模拟技术和实冲实验方法对激光拼焊门内板比例件在冲压成形过程中表现的行为进行了研究。研究表明对激光拼焊门内板在冲压成形过程中，激光焊缝会有显著的流动现象。     

激光拼焊板在轿车上的应用

激光拼焊技术是将两块或多块具有相同或不同机械性能、不同表面状态的钢板使用激光焊接的方法连接成毛坯件 ,然后进行整体冲压成轿车结构件。近几年 ,激光拼焊技术在欧美等国得到迅速发展 ,其运用的重点也逐渐从最初解决板宽发展到主要解决降低车身重量、降低油耗和减少污染排放。这对减少加工工序、降低成本 ,提高生产效率、减少材料消耗都有十分重要的作用。通过激光拼焊技术减少了原先多道冲压工序次数 ,现改为一次冲压成形 ,对控制板材冲压成形废品率起到一定的作用。激光拼焊板以其高质量、高效益、低成本备受汽车和钢铁工业界的极大关注。本文详细阐述了激光拼焊技术在轿车上应用的情况 ,并就国内激光拼焊技术的发展和研究作了介绍。     

FCOS技术被引入智能卡制造

FCOS（Flip Chip on Substrate板上倒装芯片)技术是英飞凌科技公司(Infineon)与捷德(Giesecke&Devrient)公司联合研制开发的一种专用于IC卡应用的创新芯片封装工艺。它融合了最新芯片倒装工艺和革新的材料技术，首次将集成电路“倒装”在IC卡外壳中。芯片的功能面通过传导触点直接连接至模块，不再需要传统的金线和人造树脂等封装材料，新型连接技术不仅节省了模块内的空间，而且比常规接线方式更为牢固。     

光学技术在PDP制造中的应用

近年来新型的平板显示器件PDP(等离子体显示板)发展迅速，PDP作为一种气体放电器件，其工业制造涉及电真空学、光学、化学、计算机、精细加工、微电子等学科，本文主要论述和介绍了PDP的制造工艺以及光学技术在PDP制造中的应用。     

一种更薄更简洁的芯片卡封装技术

英飞凌科技公司和捷德公司联合研制出一种专用于芯片卡应用的创新芯片封装工艺。FCOS(Flip Chip on Substrate，板上倒装芯片)技术首次将芯片卡集成电路“倒装”在芯片卡外壳中。芯片的功能面通过传导触点直接连接至模块，不再需要传统的金线和人造树脂等封装材料。新型连接技术不仅节省了模块内的空间，而且比常规接线方式更为牢固。     

TE新款板级屏蔽产品可应对EMI新挑战

TE Connectivity（TE）近日推出了板级屏蔽产品。经过冲压或拉制成一件或两件式金属笼的TE板级屏蔽产品有助于对板级部件进行隔离，最大程度地降低串扰，并且在不影响系统速度的前提下降低EMI干扰。最新的板级屏蔽（BLS）产品拥有多项标准化设计特性，包括：端子锁定孔、拐角形状和弯曲半径。     

T400工艺板及其在造纸过程中的应用

对T400工艺板的功能作了简单的介绍，重点说明了T400工艺板的接口，外围连接，软件的组态功能和过程数据通讯，最后介绍了标准软件SPW420的放卷直接张力控制应用。     

印刷电路板的设计

SMT线路板是表面贴装设计中不可缺少的组成之一。SMT线路板是电子产品中电路组件与器件的支撑件，它实现了电路组件和器件之间的电气连接。随着电子技术发展，PCB板的体积越来越小，密度也越来越高，并且PCB板层不断地增加，因此，要求PCB在整体布局、抗干扰能力、工艺上和可制造性上要求越来越高。     

国外显示技术专利文摘

本发明提供一种液晶显示装置，谋求液晶显示装置的小型化、薄型化。其具有液晶显示板，配置在上述液晶显示板的背面侧的背光源，以及一端与上述液晶显示板的端子部连接的挠性线路板，其中上述背光源具有框状模制件；上述挠性线路板被折弯，其一部分配置在上述框状模制件的背面侧；上述挠性线路板具有电子部件；上述框状模制件，具有第一侧壁、     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.