Synthesis and thermoelectric properties of (NaxCa1−x)3Co4O9 ceramics

(Na_xCa_1−x)₃Co₄O₉ (x=0.05−0.2) ceramics with a layered crystal structure were prepared by a sol–gel method followed by a low-temperature sintering procedure. The electrical conductivity and Seebeck coefficient of the complex oxide ceramics were measured from 400 to 900 °C. Their electrical conductivity and power factor increase with increasing temperature, while the thermal conductivity is very weakly dependant on the temperature. Na dopant amount has a remarkable effect on electrical and thermal transport properties. The figure of merit in the ceramic samples is smaller than that of traditional thermoelectric alloys.     

Enhanced thermoelectric performance based on special micro-configuration of graphene-ZnO induced by high-pressure and high-temperature

Zinc oxide (ZnO) is a promising high-temperature thermoelectric material. Graphene is typically a two-dimensional material, and its development and application have attracted wide attention due to its excellent thermal stability and mechanical properties. To the best of our knowledge, the graphene-ZnO (C–ZnO) composite has never been studied in the field of thermoelectric conversion. The high-pressure and high-temperature (HPHT) technique has unique advantages in improving the thermoelectric properties of ZnO. In this study, for the first time, C–ZnO bulk energy materials with novel micro-configuration were prepared by rapid sintering using the HPHT method. Observation under a microscope revealed that as the doping amount of graphene increased, a large number of graphene nanowires formed connected between the ZnO grains, and with the excess amount of graphene introduced the morphology of the ZnO grains changed and their size became smaller. This novel micro-configuration of the 0.1C–ZnO sample showed an ultrahigh electrical conductivity of 2.8 × 10⁴ S/m with a significantly lower lattice thermal conductivity of 4.3 Wm^?1K^?1 at 973 K. Ultimately, at 973 K, the zT value of the 0.1C–ZnO sample was 129 times higher than that of pure ZnO. Therefore, the high-temperature thermoelectric material C–ZnO prepared by the HPHT method can be used in automobile exhaust systems and industrial boilers to effectively recover and reuse the waste heat.     

Using graphene networks to build SiC(rGO,Gx) bulk ceramics from polymeric precursors

Unique properties of graphene open new opportunities for preparing composites with favorable functional capabilities. Herein, an ingenious synthesis route via re-pyrolysis process of ball-milling-induced SiC(rGO, Gx)_p fillers/polycarbosilane-vinyltriethoxysilane-graphene oxide (PCS-VTES-GO, PVG) precursors blends is proposed to obtain structural-functional integrated SiC(rGO, Gx) bulk polymer-derived ceramics (PDCs). The introduction of SiC(rGO, Gx)_p provides favorable moldability, ceramic yield and linear shrinkage. Attractively, graphene networks with more free-moving electrical-charge carriers and wider phonon-channel prominently enhance electrical and thermal conductivities of products. Particularly, SiC(rGO, G_20%) bulk PDCs generated at 1300 °C own satisfactory ceramic yield (90.74%), linear shrinkage (5.00%), fracture toughness (2.07 MPa m^1/2), bending strength (35.37 MPa), electrical conductivity (25.72 S cm^?1) and thermal conductivity (6.72 W m^?1·K^?1), realizing outstanding values to the best of our knowledge. This fabrication method favors mass production of larger-sized PDCs and possess potential emerging uses.     

High-temperature conductivity,stability and redox properties of Fe3−xAlxO4 spinel-type materials

Iron-based oxides are considered as promising consumable anode materials for high temperature pyroelectrolysis. Phase relationships, redox stability and electrical conductivity of Fe_3?xAl_xO₄ spinels were studied at 300–1773 K and p(O₂) from 10^?5 to 0.21 atm. Thermogravimetry/XRD analysis revealed metastability of the sintered ceramics at 300–1300 K. Low tolerance against oxidation leads to dimensional changes of ceramics upon thermal cycling. Activation energies of the total conductivity corresponded to the range of 16–26 kJ/mol at 1450–1773 K in Ar atmosphere. At 1573–1773 K and p(O₂) ranging from 10^?5 to 0.03 atm, the total conductivity of Fe_3?xAl_xO₄ is nearly independent of the oxygen partial pressure. The conductivity values of Fe_3?xAl_xO₄ (0.1 ≤ x ≤ 0.4) at 1773 K and p(O₂) ～10^?5 to 10^?4 atm were found to be only 1.1–1.5 times lower than for Fe₃O₄, showing high potential of moderate aluminium additions as a strategy for improvement of refractoriness for magnetite without significant deterioration of electronic transport.     

Achieving weak anisotropy in N-type I-doped SnSe polycrystalline thermoelectric materials

SnSe is a very strong anisotropic material; sometimes, strong anisotropy is unenviable for producing parts of thermoelectric (TE) devices. In order to study the efficient preparation of high-performance n-type polycrystalline SnSe with weak anisotropy, in this work, we combine mechanical alloying at 450 RPM for 10 h and spark plasma sintering at 773 K under 50 MPa pressure for the preparation of polycrystalline SnSe _0.95-xI_x (x = 0,0.01,0.02,0.03) samples, and investigate the TE properties. The prepared samples show very weak anisotropy. With iodine doping, increased carrier concentration is observed, in agreement with DFT calculations. A peak ZT ≈ 1.02 at 723 K is observed with I-doping of x = 0.02, which is about 225% higher than that of undoped sample with ZT ≈ 0.31 at 723 K in parallel direction, mainly attributed to the enhanced power factor and about 56% reduced thermal conductivity from 0.68 Wm^?1K^?1 to 0.30 Wm^?1K^?1. TE properties in both directions are not much different, and the ratios of electrical and thermal conductivities in both directions are very close to unity.     

The effect of nano-twins on the thermoelectric properties of Ga2O3(ZnO)m (m = 9, 11, 13 and 15) homologous compounds

Ga₂O₃(ZnO)_m (m = integer) homologous compounds are naturally occurring nanostructured materials. Their intrinsically low thermal conductivity makes them attractive for thermoelectric applications. High density Ga₂O₃(ZnO)_m (m = 9, 11, 13, and 15) single phase ceramics were prepared by solid-state reaction. Nano-sized, twin-like V-shaped boundaries parallel to b-axis (apex angle ∼ 60°) were observed for all compositions. Atomic resolution Z-contrast imaging and EDS analysis for m = 15 showed segregation of Ga ions at the interface of V-shaped twin boundaries. Thermal and charge transport properties depend on the value of m. Compositions with m = 9 exhibited very low lattice thermal conductivity of 2 to 1.5 W/m.K at 300 K–900 K; compositions with m=15 showed improved power factor of 140 μW/m. K² at 900 K leading to a thermoelectric figure of merit (ZT value) of 0.055. This study explores the structural variants and routes to improve the thermoelectric properties of these materials     

Rapid fabrication of Se-modified skutterudites obtained via self-propagating high-temperature synthesis and pulse plasma sintering route

Selenium is an effective dopant in skutterudite-based thermoelectric materials. It strongly influences thermal transport properties due to effective phonon scattering. This study proposes a short-term fabrication route to Se-modified CoSb₃-based materials. Alloy synthesis was conducted via self-propagating high-temperature synthesis. Subsequently, pulse plasma sintering consolidated all materials. As a result, thermoelectric materials with high electrical properties homogeneity were obtained. Seebeck potential mapping showed the measured deviation of the Seebeck coefficient for all fabricated samples was between 5 and 7%. A very low thermal conductivity (1.59 W m^?1 K^?1, at 573 K) was achieved for the highest doped sample, and one of the lowest reported results obtained for bulk skutterudite-based thermoelectric materials ever. This resulted in a low lattice thermal conductivity (1.51 W m^?1 K^?1, at 573 K). This led to the highest ZT (0.27 at 623 K) for the highest doped sample.     

Thermoelectric properties of Mo-doped bulk In2O3 and prediction of its maximum ZT

In a search for new thermoelectric materials, indium oxide (In₂O₃) was selected as a candidate for high-temperature thermoelectric oxide materials due to its intrinsically low thermal conductivity (<2 W/mK) and ZT values around 0.05. However, low electrical conductivity is a factor limiting the thermoelectric performance of this oxide, and was addressed in this study by Mo doping. It was found that Mo is soluble in In₂O₃ but forms secondary phases at a fraction near x = 0.06 and higher. Mo was found to be unsuitable for heavy n-type doping necessary to improve the thermoelectric performance of the oxide to the desired level (ZT = 1). However, the experimental data enabled us to analyze the electrical conductivity behavior and the Seebeck coefficient of doped In₂O₃ with different carrier concentrations, predicting a theoretically achievable maximum power factor value of 1.77 × 10^?3 W/mK² at an optimum carrier concentration. This estimation predicts the highest ZT value of 0.75 at 1073 K, assuming the lattice thermal conductivity value remaining at an amorphous level.     

Enhanced Thermoelectric Properties of Bi2O2Se Ceramics by Bi Deficiencies

Polycrystalline Bi_2?xO₂Se ceramics were synthesized by spark plasma sintering process. Their thermoelectric properties were evaluated from 300 to 773 K. All the samples are layered structure with a tetragonal phase. The introduction of Bi deficiencies will cause the orientation alignment and change of effective mass. As a result, a significant enhancement of thermoelectric performance was achieved. The maximum of Seebeck coefficient is ?568.8 μV/K for Bi_1.9O₂Se at 773 K, much larger than ?445.6 μV/K for pristine Bi₂O₂Se. Featured with very low thermal conductivity [~0.6 W·(m·K)^?1] and an optimized electrical conductivity, ZT at 773 K is significantly increased from 0.05 for pristine Bi₂O₂Se to 0.12 for Bi_1.9O₂Se by introducing Bi deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.     

Thermoelectric properties and figure of merit of perovskite-type Sr1−xLaxSnO3 ceramics

The thermoelectric properties of perovskite-type Sr_1−xLa_xSnO₃ ceramics with x=0.01–0.05 were evaluated from the Seebeck coefficient S, electrical conductivity σ, and thermal conductivity κ measured at high temperatures. The La-doped ceramics were n-type semiconductors exhibiting thermally activated electrical conduction behaviors in the temperature range of 473–1073 K. Eelectron carriers were introduced into the conduction band from doped La atoms up to x=0.03, which was the solubility limit of La at Sr site. The temperature dependence of the κ values for the ceramics was unaffected by both the La content and the microstructures. Estimations of the electronic thermal conductivities by the Wiedemann-Franz law revealed that the phonon thermal conductivities were dominant for all ceramics. The dimensionless figure of merit ZT increased with increasing temperature for all ceramics and reached 0.02–0.05 at 1073 K. In contrast to cubic Ba_1−xLa_xSnO₃ ceramics, bending of the Sn–O–Sn bonds due to octahedral tilting distortion in Sr_1−xLa_xSnO₃ lowered the electron mobility, decreasing the power factor S²σ and ZT values, although it effectively reduced the phonon mean free path, decreasing the κ values.     

Grain boundary engineered,multilayer graphene incorporated LaCoO3 composites with enhanced thermoelectric properties

Enhancement of thermoelectric properties by virtue of decreased electrical resistance through grain boundary engineering is realised in this study. A robust strategy of optimisation of the transport properties by tuning the energy filtering effects at the interfaces by decreasing the interfacial electrical resistance is achieved in LaCoO₃ (LCO). This is accomplished by the incorporation of multilayer graphene within the parent LCO matrix containing multi-scale nano/micro grains. The present work has attained a substantial increment in electrical conductivity from a value of 96 Scm^-1 for bare LCO to ～5300 Scm^-1 at 750 K by incorporating 0.08 wt% multilayer graphene in LCO. No significant change in thermal conductivity is observed due to the presence of multilayer graphene in LCO. A zT of 0.33 at 550 K for 0.08 wt% multi-layer graphene incorporated LCO composite is achieved which is the highest thermoelectric figure of merit value for undoped LCO reported until now.     

Effects of anion and cation doping on the thermoelectric properties of n-type PbS

The PbCl_xS_1-x and Pb_1-xBi_xS (x? =?0–0.05) bulks were fabricated with a facile method of hydrothermal synthesis and microwave sintering, and the effect of anionic and cationic donors on the thermoelectric performance of PbS was investigated. Although Cl^? and Bi³⁺ both effectively improved the thermoelectric properties of n-type PbS, more excellent thermoelectric performance was obtained from Cl^? doped samples because of higher electrical property and lower thermal conductivity at higher temperature (T? >?600?K). The thermoelectric figure of merit (ZT) reaches 1.04 for PbCl_0.015S_0.985 at 800?K and increases with temperature increasing without sign of saturation, which is probably the highest value ever reported for single-phase polycrystalline n-type PbS. The results also indicate that the hydrothermal synthesis and microwave sintering can realize anion doping as well as cation doping for n-type PbS at low cost, and PbS should be a robust alternative for PbTe thermoelectric materials.     

Thermal Properties of Hf‐Doped ZrB2 Ceramics

The effect of Hf additions on the thermal properties of ZrB₂ ceramics was studied. Reactive hot pressing of ZrH₂, B, and HfB₂ powders was used to synthesize (Zr_1?x,Hf_x)B₂ ceramics with Hf contents ranging from x = 0.0001 (0.01 at.%) to 0.0033 (0.33 at.%). Room‐temperature heat capacity values decreased from 495 J·(kg·K)^?1 for a Hf content of 0.01 at.% to 423 J·(kg·K)^?1 for a Hf content of 0.28 at.%. Thermal conductivity values decreased from 141 to 100 W·(m·K)^?1 as Hf content increased from 0.01 to 0.33 at.%. This study revealed, for the first time, that small Hf contents decreased the thermal conductivity of ZrB₂ ceramics. Furthermore, the results indicated that reported thermal properties of ZrB₂ ceramics are affected by the presence of impurities and do not represent intrinsic behavior.     

Enhanced thermoelectric properties and electronic structures of p-type BiCu1−xAgxSeO ceramics

The thermoelectric properties and electronic structures were investigated on p-type BiCu_1-xAg_xSeO (x=0, 0.02, 0.05, 0.08) ceramics prepared using a two-step solid state reaction followed by inductively hot pressing. All the samples consist of single BiCuSeO phase with lamella structure and no preferential orientation exists in the crystallites. Upon replacing Cu⁺ by Ag⁺, maximum values of electrical conductivity of 36.6 S cm⁻¹ and Seebeck coefficient of 350 μV K⁻¹ are obtained in BiCu_0.98Ag_0.02SeO and BiCu_0.92Ag_0.08SeO, respectively. Nevertheless, a maximum power factor of 3.67 μW cm⁻¹K⁻² is achieved for BiCu_0.95Ag_0.05SeO at 750 K owing to the moderate electrical conductivity and Seebeck coefficient. Simultaneously, this oxyselenide exhibits a thermal conductivity as low as 0.38 W m⁻¹ K⁻¹ and a high ZT value of 0.72 at 750 K, which is nearly 1.85 times as large as that of the pristine BiCuSeO. The enhancement of thermoelectric performance is mainly attributed to the increased density of states near the Fermi level as indicated by the calculated results.     

High-temperature thermoelectric performance of (W1−xTix)18O49

High-temperature thermoelectric properties of tungsten-based Magnéli phase oxide (W_1-xTi_x)₁₈O₄₉ (0 ≤ x ≤ 0.25) prepared by solid state reaction followed by densification via spark plasma sintering (SPS) were studied. The Ti substitution increased the Seebeck coefficient, the power factor, and decreased both the electronic and lattice thermal conductivity. The synergistic substitution effect on the electrical and thermal properties and inherently low total thermal conductivity of 1.46 ± 0.08 WK^?1 m^?1 originating from the tunnel-like crystal structure of the oxide led to a significantly high ZT of 0.50 ± 0.07 at 1073 K for the sample with x = 0.2.     

Marked reduction in the thermal conductivity of (La0.2Gd0.2Y0.2Yb0.2Er0.2)2Zr2O7 high-entropy ceramics by substituting Zr4+ with Ti4+

The (La_0.2Gd_0.2Y_0.2Yb_0.2Er_0.2)₂(Zr_1-xTi_x)₂O₇ (x = 0–0.5) high-entropy ceramics were successfully prepared by a solid state reaction method and their structures and thermo-physical properties were investigated. It was found that the high-entropy ceramics demonstrate pure pyrochlore phase with the composition of x = 0.1–0.5, while (La_0.2Gd_0.2Y_0.2Yb_0.2Er_0.2)₂Zr₂O₇ shows the defective fluorite structure. The sintered high-entropy ceramics are dense and the grain boundaries are clean. The grain size of high-entropy ceramics increases with the Ti⁴⁺ content. The average thermal expansion coefficients of the (La_0.2Gd_0.2Y_0.2Yb_0.2Er_0.2)₂(Zr_1-xTi_x)₂O₇ high-entropy ceramics range from 10.65 × 10^?6 K^?1 to 10.84 × 10^?6 K^?1. Importantly, the substitution of Zr⁴⁺ with Ti⁴⁺ resulted in a remarkable decrease in thermal conductivity of (La_0.2Gd_0.2Y_0.2Yb_0.2Er_0.2)₂(Zr_1-xTi_x)₂O₇ high-entropy ceramics. It reduced from 1.66 W m^?1 K^?1 to 1.20 W m^?1 K^?1, which should be ascribed to the synergistic effects of mass disorder, size disorder, mixed configuration entropy value and rattlers.     

Enhanced Thermoelectric Performance of CdO Ceramics Via Ba2+ Doping

Polycrystalline Cd_1?xBa_xO (0 ≤ x ≤ 0.08) ceramics were synthesized via conventional solid‐state reaction method, and the effect of Ba²⁺ doping on the microstructure as well as the thermoelectric transport properties of the samples were investigated. It was found that doping of Ba²⁺ can inhibit the grain growth of CdO, resulting in a considerable reduction in grain size. Moreover, with the increase in Ba²⁺ doping content, both the electrical conductivity and the thermal conductivity of Cd_1?xBa_xO decreased, whereas the Seebeck coefficient increased. A high ZT value of 0.47 was achieved for Cd_0.99Ba_0.01O at 1000 K, 38% higher than the undoped CdO, mostly due to reduction of the thermal conductivity.     

Enhanced thermoelectric properties of Na and Mg co−doped BiCuSeO

A series of Bi_0.97?xNa_0.03Mg_xCuSeO (0 ≤ x ≤ 0.12) was fabricated by a two?step solid?state reaction and spark plasma sintering (SPS), and the influence of Mg²⁺ doping on the thermoelectric properties of Bi_0.97Na_0.03CuSeO was systematically investigated. The SPS processed?Bi_0.97?xNa_0.03Mg_xCuSeO had a ZrSiCuAs?type tetragonal crystal structure (space group P4/nmm). The Mg²⁺ doping appreciably enhanced the electrical conductivity due to the increase in hole concentration. Furthermore, the Mg²⁺ doping increased the grain boundary areas and bulk porosity and induced the strain field and mass fluctuations, thereby reducing the phonon thermal conductivity. We significantly improved the thermoelectric performance of Bi_0.97?xNa_0.03Mg_xCuSeO (0 ≤ x ≤ 0.12) by enhancing the thermoelectric power factor and by reducing the thermal conductivity.     

Improvement in electrical properties of thermoelectric CuAlO2 ceramics aided by aluminosilicate glass

Delafossite CuAlO₂ (CAO) ceramics were fabricated by the solid‐state route, using aluminosilicate glass powders as a sintering aid to improve the sintering ability and electrical conductivity, at 1473 K for 3 hours. The CAO ceramics with glass addition obviously enhanced bulk density, grain size, and electrical conductivity. It is found that the conductivity of CAO ceramics increased with the increase in glass content under 9.5%, whereas it was over 9.5%, the conductivity went down. The glass coming up to 9.5% increased the sintering ability and the electrical conductivity which was increased by one order of magnitude, thus increasing the figure of merit ZT for thermoelectric performance of our CAO added with 9.5% glass up to 9.82 × 10^?3 at 773 K, which is a high value among the CAO ceramics. Besides, the impedance analysis shows that the impedance of the CAO ceramic was controlled by its grain boundary.     

Electrical and Thermal Properties of SiC Ceramics Sintered with Yttria and Nitrides

The electrical and thermal properties of SiC ceramics containing 1 vol% nitrides (BN, AlN or TiN) were investigated with 2 vol% Y₂O₃ addition as a sintering additive. The AlN‐added SiC specimen exhibited an electrical resistivity (3.8 × 10¹ Ω·cm) that is larger by a factor of ~10² compared to that (1.3 × 10^?1 Ω·cm) of a baseline specimen sintered with Y₂O₃ only. On the other hand, BN‐ or TiN‐added SiC specimens exhibited resistivity that is lower than that of the baseline specimen by a factor of 10^?1. The addition of 1 vol% BN or AlN led to a decrease in the thermal conductivity of SiC from 178 W/m·K (baseline) to 99 W/m·K or 133 W/m·K, respectively. The electrical resistivity and thermal conductivity of the TiN‐added SiC specimen were 1.6 × 10^?2 Ω·cm and 211 W/m·K at room temperature, respectively. The present results suggest that the electrical and thermal properties of SiC ceramics are controllable by adding a small amount of nitrides.