计算对数周期偶极子天线相位中心的变步长法

为了提高计算对数周期偶极子天线(LPDA)视在相位中心的速度和精度,提出一种计算LPDA视在相位中心的变步长法,井计算LPDA的E面、H面视在相位中心,给出了E面、H面方向图半功率波瓣宽度内的最大相位差.最后,根据计算出的相位中心重新计算LPDA在E面、H面的相位方向图,在天线功率波瓣宽度内相位值平坦,表明该方法是有效的.     

对数周期偶极子天线相位中心的分析和计算

本文通过对对数周期偶极子天线(LPDA)相位中心的分析和计算,得出了该天线不存在完整的相位中心,但却存在视在相位中心,该相位中心均位于有效区内,并随着频率的变化而沿集合线移动.文中计算了LPDA不同频率处的E面和H面视在相位中心的位置.     

对数周期偶极子天线全空间可变相位中心

导出了直线阵列在全空间中存在可变相位中心的条件,得出了由非相似单元组成的直线阵列(如对数周期偶极子天线)不存在全空间可变相位中心,但在E面和H面独立存在各自的可变相位中心的结论.证明了对数周期偶极子天线(LPDA)在E面和H面有不同的可变相位中心.采用矩量法(MoM)分析了LPDA的E面和H面可变相位中心,计算结果表明:虽然在LPDA的主波束范围内其相位中心变化很小,可以作为"视在相位中心",但是这种"视在相位中心"仍然在E面和H面是不重合的.此外,"视在相位中心"随着频率沿着集合线移动.     

采用改进的标准场地法测量LPDA

采用改进的标准场地法针对LPDA和复合天线分别进行了测试和比较分析.分析了采用ANSI C63.5:2006测量对数周期天线LPDA和复合天线的自由空间天线系数Fa时,由相位中心引起的误差;对CISPR 16-1-6 (CDV)中的计算公式进行了改进,使得即使配对中的天线结构不相同也可以进行比较准确的测量;然后分别针对LPDA和复合天线进行了试验,并与使用CISPR 16-1-6(CDV)中垂直方法的测量结果进行了比较.结果表明:在200 MHz ～2 GHz范围内大部分频段小于0.6 dB,首末频点差别小于0.9 dB.为了便于工程应用,还提供了背景噪声的抑制措施、电缆的选用原则等.     

平板裂缝天线子阵设计的功率平衡原则

指出了目前平板裂缝天线子阵中存在的相位台阶现象,并分析了相位台阶对天线性能的影响.在仿真计算和工程设计的基础上,提出了功率平衡设计原则,以减弱或消除子阵的相位台阶,在一定程度上拓展了天线带宽,同时也改善了天线E面由于相位台阶引起的副瓣恶化现象.     

大张角宽带对数周期天线的优化设计

文章运用矩量法对大张角对数周期天线的电性能进行了分析.经过优化设计制作的大张角宽带对数周期偶极子天线(LPDA,Log Periodic Dipole Antennas),经测试测量值与计算值吻合得较好,已用于混波室测试.     

LPDA宽带宽角响应的快速矩量法计算

根据一种具有分域基和全域基各自优点的混合域基函数,采用伽列金矩量法对对数周期天线(LPDA)进行方向图和电流分布计算.由于该混合域基函数的运用,仅需将天线振子剖分较少分段即可得出较为精确的解,计算结果证明了所提方法的正确性和有效性.     

副面修正卡塞格伦天线设计中的几个问题

本文根据几何光学理论,介绍了副面修正双反射面天线组合馈源相位中心的计算方法.并利用并矢反射系数,导出了包括差波束在内的副面散射场及天线口径分布,因而解决了副面修正天线性能参数的计算问题.     

计算天线相位中心的移动参考点法

通过对天线的相位中心和等相位面的计算和分析,提出了移动参考点法,并通过此法得出了角锥喇叭的相位中心、等相位面宽度以及它们与相位偏差之间的关系.由Muehldorf等人采用的求远场相位面曲率中心法只是本方法的一种特殊情况.     

曲线振子对数周期天线的小型化研究

针对频率较低时对数周期天线（LPDA）具有较大纵向尺寸,给出以曲线单元作为LPDA 的振子,以实现小型化的方法。采用曲线单元加长了LPDA 振子的电流路径,实现了天线的小型化;通过采用三角、正弦、矩形三种线型单元作为LPDA 的振子,研究了不同线型的小型化效率。对设计的三种线型LPDA 进行了仿真研究,结果表明：用曲线振子作为 LPDA 的振子是LPDA 小型化的有效措施,其中矩形线型振子LPDA 相比传统LPDA,尺寸缩小了19%;曲线振子LPDA的小型化效率主要受曲线长度的影响,与振子的形状和宽度也有关系。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.