基于高级硅刻蚀和硅氧化工艺的软X射线干涉光刻分束光栅的优化设计

基于严格的矢量耦合波方法,对13.4nm(92.5eV)软X射线正入射于周期140nm的Si光栅和SiO2光栅的一级衍射效率进行了模拟计算,结果表明SiO2光栅的最大一级衍射效率远比Si光栅高,同时也比目前用于13.4nm软X射线干涉光刻的Cr/Si3N4复合光栅高.本文提出用高级硅刻蚀工艺和硅氧化工艺制作深高宽比纳米级SiO2光栅的新方法,可以解决直接刻蚀制作此光栅难度大的问题,适用于制作上海光源(SSRF)软X射线干涉光刻分束光栅.     

直流电沉积制备纳米铜丝阵列

研究采用模板法直流电沉积制备纳米铜丝阵列。基底选用阳极三氧化二铝硬模板,膜底磁控溅射1层薄铜层（1μm以下）做导电底衬,再利用直流电沉积法制备出纳米铜丝阵列。由此工艺所制备的纳米铜丝长度可达50μm左右、直径约为250nm,丝阵含铜量高。讨论了阴极电流密度、阴极电位、模板类型、模板孔径等因素对纳米铜丝生长的影响,为惯性约束聚变（ICF）实验除金腔靶外的其它金属靶的研究提供了一种新方法。     

微柱状CsI闪烁转换屏的制备和表征

闪烁转换屏是X射线成像探测器的重要组成部分,微柱状的闪烁转换屏可以提高X射线成像探测器的空间分辨率。采用周期为4μm、孔深为100μm的微孔硅阵列作为基底模板,热氧化得到二氧化硅反射层后,再通过真空熔融压力注入法填充CsI获得了具有周期结构的微柱状闪烁转换屏,研究了真空度、注入压力、加压时间对硅孔内CsI微柱形貌的影响。结果表明:真空度10^-2 Pa、注入压力6 MPa、加压时间30 min时,可以有效消除CsI微柱中存在的气泡,得到均匀、连续、致密的微柱状闪烁转换屏。X射线衍射和激发发射谱展示了制备的微柱状像素化CsI闪烁转换屏具有优异的结晶性和发光性能。刃边法测得制备的微柱状CsI闪烁转换屏空间分辨率可达97 lp/mm。     

基于三维纳米阵列结构的表面增强拉曼技术研究及其在痕量铀酰离子探测中的应用

表面增强拉曼散射(SERS)是一种新型痕量表征技术，其灵敏度高、样品用量少、特征谱易辨识，尤其适用于铀酰离子等危化品的探测。在过去十几年里, 纳米材料和纳米技术在新兴技术和SERS的应用方面获得了长足发展，将先进的纳米制造技术引入了SERS领域。本文总结了利用光刻、原子层沉积等技术，开发了一系列高质量的三维阵列纳米材料作为SERS基底，并应用于痕量铀酰离子的检测。其中，以Al₂O₃、HfO₂等惰性氧化物包裹修饰的银纳米棒三维阵列作为基底，灵敏度高，稳定性好，根据不同特征的拉曼振动频谱，可识别多个不同种态的铀酰离子，检出限低至nmol/L，具有潜在的实际应用价值。     

具有高激光损伤阈值的光栅分光薄膜

为惯性约束聚变（ICF）实验中利用光栅分光特性间接探测激光功率研究，制备具有高激光损伤阈值的光栅分光ZrO2薄膜。采用水热法制备纳米ZrO2溶胶，在80－100℃下，以20m/min速度涂敷制备出厚1－2μm、拆射率为1．57－1．70、表面粗糙度2．3nm、激光损伤阈值为25－30J/cm^2(1ns,1.06μm）的ZrO2薄膜。采用Ar^ 激光器双光束干涉曝光技术制备光栅掩膜板，光栅周期为1－2μm，深度70－100nm。通过电镀工艺将光栅结构转移至镍板上，经连续模压，最终制备出光栅分光ZrO2薄膜。分析了光栅周期、模压深度及薄膜折射率等因素对光栅一级衍射效率的影响。制备出的光栅分光ZrO2薄膜有望用于高功率激光测量。     

玻璃基底上三角纳米银的原位生长与光谱特性研究

以经硅烷化后的玻璃片为基底,吸附三角形银纳米种子,采用柠檬酸钠为还原剂,在室温下还原硝酸银,制备出基底表面具有三角形银纳米粒子聚集结构的材料。应用透射电镜、扫描电镜、X射线衍射仪、吸收和荧光光谱对产物的结构和性质进行表征。结果表明：随着生长液体积的增加,基片上三角形银纳米盘的平均粒径长大约为300nm,且基底上出现了双层粒子堆叠;基底上纳米粒子的吸收光谱中出现了由银粒子的表面等离子体激元偶极子耦合引发的强烈吸收峰,耦合峰在600～800nm波段内移动;在215nm紫外光的激发下,基底上纳米粒子的荧光光谱在400nm处出现发射峰,荧光光谱的发光强度随着基底上粒子平均尺度增加而减弱。     

软X射线光子关联谱装置设计

X射线光子关联谱技术(X-ray Photon Correlation Spectroscopy,XPCS)是一种利用相干X光散射的二次相干,研究凝聚态物质在小尺度范围弛豫动力学的新技术,对入射光的相干性有较高要求。上海同步辐射光源BL08U干涉光刻分支线站(X-ray Interference Lithograph,XIL)采用椭圆偏振波荡器作为光源,具有很好的相干性,光子通量高,适合铁电体、磁性材料中介观尺度电极性或磁性微区的动力学研究。由此设计一套基于软X射线的光子关联谱装置,采用软X射线为入射相干光,对二次相干光采集、转换、放大处理之后进行自相关运算。该装置测量的样品周期尺度范围为10～60 nm。该装置的研制设计为更好地分析材料动力学信息提供了一种技术途径,是硬X射线的有效补充。     

CrAlN/TiAlN纳米多层膜界面结构的中子与X射线反射研究

采用反应磁控溅射技术在单晶硅基片上制备了CrN纳米单层膜和CrAlN/TiAlN纳米周期膜,利用非极化中子和X射线反射对膜层厚度、膜层界面粗糙度、界面扩散等表面、界面结构和性质进行了系统研究。中子反射测得的CrN纳米单层膜和CrAlN/TiAlN纳米周期膜的厚度与设计厚度的差别为3.8%～4.2%。散射长度密度（SLD）分析结果表明,膜层间和膜层与基底间界面较为清晰,扩散较少。X射线反射测得的膜层厚度较中子反射测得的膜层厚度偏高,对于较小调制周期的多层膜,界面弥散会对X射线反射结果产生较大误差。     

ICF分解实验中的平面调制靶和薄膜靶的研制

本工作研制了用于惯性约束聚变ICF分解实验模拟聚变靶丸表面粗糙度和驱动激光空间不均匀性对R—T不稳定性作用的平面调制靶和平面薄膜靶。以激光干涉法结合图形转移工艺获得波长20～100μm、振幅0．0～4．0μm的正弦调制图形的模板,再将调制图形转移至溴代聚苯乙烯薄膜表面,制备出ICF实验用溴代聚苯乙烯平面调制箔靶;以半导体工艺结合自截止腐蚀工艺制得厚度4μm左右的自支撑Si平面薄膜靶。Si膜的表面粗糙度为几十纳米。对所研制的两种靶型的参数进行了测量。     

微米柱阵列ICF埋点靶的制备

微米柱阵列埋点靶是研究超短激光辐照靶激光吸收效率和等离子体产生过程及发展的1种重要靶型。本文结合采用电子束刻蚀、X射线刻蚀和微电镀等制备金微米点阵列,用CVD方法对阵列间隙填充无应力CH薄膜,用SEM、AFM与白光干涉仪等对制作过程和结果样品进行检测。结果表明,用电子束刻蚀方法制作的掩膜分辨率好、边缘光滑。用同步辐射的X光制作高质量样品,样品点柱高宽比为4,垂直度近于90°,点柱阵列周期为2×2μm,CH层厚约4μm。     

Micro-machining of resists on silicon by proton beam writing

We report micro-machining of resists on silicon by proton beam writing (PBW) at Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA Takasaki, Japan. We studied the proton beam irradiation effects on typical positive and negative resists such as PMMA and SU-8, respectively, for application of the PBW technique to micro-machining. These resist materials were subjected to the scanning of a focused beam of protons accelerated using the microbeam facility of TIARA. Diameter of the proton beam was focused to about 1 μm. The fluence was varied to examine the irradiation effects on these resists as a function of the beam current and irradiation time. After exposure to proton beam, samples were developed and evaluated by a scanning electron microscope. Attempts to fabricate nickel stamps were also made by electroplating on the structures formed by PBW for application to imprint lithography.     

快重离子束引起的Cu-Si膜系的两种不同类型的增强附着效应

对沉积在N型半导体硅上的Cu薄膜用几MeV的Cl离子进行了不同剂量的辐照实验以观测其增强附着行为。结果表明,Cu-Si膜系存在两种不同类型的增强附着效应。用扫描电镜对低剂量轰击出现附着增强区域的硅基底表面进行观察,未发现任何微裂现象。这与人们在解释Au-SiO_2膜系出现类似增强附着时提出的微裂观点不相符合。     

EB预辐照对制备PANACF表面形貌的影响

提出了利用电子束（electron beam, EB）预辐照聚丙烯腈基纤维（polyacrylonitrile-based fiber, PANF）后再进行炭化活化制备聚丙烯腈基活性炭纤维（polyacrylonitrile-based activated carbon fiber, PANACF）的方法。吸收剂量为160 kGy并用w=10%KOH溶液浸渍30 min的PANF在450 ℃下模拟炭化活化30 min后,SEM分析显示其表面出现了与未辐照PANF不同的密集的蜂巢状结构,其BET法比表面积（specific surface area, SSA）约为未辐照样品的9倍,BJH法计算结果显示其为孔径分布集中在2～10 nm的介孔材料。该结果表明,EB预辐照对制备PANACF的表面形貌具有调控作用。     

First direct-write lithography results on the Guelph high resolution proton microprobe

The recently completed high-resolution proton microprobe at the University of Guelph is Canada’s first one-micron nuclear microprobe, which represents the country’s state-of-the-art technology for various nuclear microprobe applications, e.g. direct-write microlithography. Its probe-forming system is comprised of a triplet Oxford Micro beams magnetic quadrupole lenses, along with high-precision objective slits. High energy protons coming off a 3 MV particle accelerator can achieve a nominal resolution of one micro and a beam current of several hundred of picoamperes when arriving at the target. This proton probe is ideal for the use of direct-write lithography with the incorporation of a magnetic scanning system and motorized sample stage.Preliminary lithography results have been obtained using spin-coated PMMA photoresist as specimen. The beam spot size, beam range and straggling inside the substrate and the exposure conditions are investigated by using scanning electron microscopy. This facility is the first in Canada to perform focused direct-write ion beam lithography, which is ideal for modification and machining of polymer and semiconductor materials for biological, microfluidic and ultimate lab-on-chip applications.     

SEM Analysis of Ionizing Radiation Effects in Linear Integrated Circuits

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons [(10 rad (Si)], while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.     

Accurate location and marking of grain boundaries using focused ion and electron beams

We have investigated the 2×12° symmetric grain boundary of (0 0 1) oriented bicrystalline silicon substrates for high-T_c superconductor applications using scanning focused ion beam (FIB) and electron beam (SEM). We successfully used the focused ion beam to detect and to mark the grain boundary and hence, to increase the accuracy of positioning the Josephson device with respect to the grain boundary of the silicon substrate. Both imaging methods have been compared using channeling effects of focused ion and electron beams in a dual beam system.     

A scanning positron microscope for defect analysis in materials science

The realisation of a scanning positron microscope will be presented and discussed. A positron beam with a variable energy from 0.5 to 30 keV, with a spot diameter of 1 μm or below, can be scanned over an area of 0.6 × 0.6 mm². This beam is formed after a double stage stochastic cooling (moderation) of positrons emitted from a radioactive isotope. In addition the positron beam will be pulsed in order to have a well-defined time base for positron lifetime measurements. In the system included is a conventional scanning electron microprobe for surface analysis. The design of the scanning positron microscope is dominated by the special demands of positron physics.     

Effects of Surface Pretreatment on Nucleation and Growth of Ultra-Nanocrystalline Diamond Films

The effects of different surface pretreatment methods on the nucleation and growth of ultra-nanocrystalline diamond(UNCD) films grown from focused microwave Ar/CH_4/H_2(argonrich) plasma were systematically studied.The surface roughness,nucleation density,microstructure,and crystallinity of the obtained UNCD films were characterized by atomic force microscope(AFM),scanning electron microscopy(SEM),X-ray diffraction(XRD),and Raman spectroscopy.The results indicate that the nucleation enhancement was found to be sensitive to the different surface pretreatment methods,and a higher initial nucleation density leads to highly smooth UNCD films.When the silicon substrate was pretreated by a two-step method,i.e.,plasma treatment followed by ultrasonic vibration with diamond nanopowder,the grain size of the UNCD films was greatly decreased:about 7.5 nm can be achieved.In addition,the grain size of UNCD films depends on the substrate pretreatment methods and roughness,which indicates that the surface of substrate profile has a "genetic characteristic".     

Characterization of Diamond: Like Carbon Films Synthesized by DC-Plasma Enhanced Chemical Vapor Deposition

In this paper, diamond-like carbons were produced on tungsten and aluminum substrates by DC plasma enhanced chemical vapor deposition (DC-PECVD) system in a C₂H₂/H₂ gas mixture using C₂H₂ as source hydrocarbon and H₂ as etching and diluting gas. The operation pressure during the growth and substrates temperature were 15 Torr and 180°C, respectively. Characterization of the DLCs deposited on tungsten and aluminum substrates were carried out by Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), Raman spectroscopy and Atomic force microscopy (AFM). AFM analysis displayed that the DLCs grown on W substrate has lower roughness than the DLCs deposited on Al substrate and it was smoother. FTIR analysis indicates the existence of C–H vibration mode in the DLCs grown on both of substrates. The Raman spectroscopy shows G peak position and I(D)/I (G) ratio decreased for the DLCs grown on W substrate. The SEM images show diffuse and dense distribution of DLCs in Al and W substrate, respectively. These results shows that the optimum conditions were obtained on W substrate.