中值直方图均衡的单帧红外图像非均匀校正算法

为了实现红外图像的自适应校正,利用红外焦平面的非均匀性成列分布的特性,提出了一种针对红外图像进行非均匀校正的新方法。新算法统计图像每列的直方图,对列局部的直方图进行排序,得到局部直方图的中值,然后对中值直方图进行均衡,通过均衡直方图灰度映射得到校正后的图像。算法实现不需要任何运动补偿或累加计算,在单帧图像内完成非均匀校正。实际应用证明,与同类自适应校正算法相比,该算法具有校正精度高、速度快、抑制目标退化能力强的优点。     

基于局部直方图规定化的红外图像非均匀性校正

非均匀性噪声严重影响着红外焦平面阵列的成像质量。针对条纹非均匀性问题,提出了一种基于局部直方图规定化的红外图像非均匀性校正算法。该算法对图像逐列进行处理,首先采用文中提出的加权折中直方图方法计算得到每一列图像的期望直方图,然后对当前图像列进行直方图规定化处理,最后遍历整幅图像实现非均匀性校正。实验结果表明,本文算法能够有效地抑制红外图像的条纹非均匀性噪声,同时较好地保留了图像的边缘轮廓信息。     

中值直方图在线列扫描系统中的应用

针对红外线列扫描系统所特有的垂直于扫描方向的条状噪声,本文采用Tendero所提出的基于中值直方图均衡的校正算法对其进行非均匀性校正。并且在计算中值直方图时,采用IQR加权算子来弥补采用高斯加权算子时所导致的过度平滑问题。实验表明,本算法简单快捷,易于工程实现,不仅可避免一般场景法存在的"鬼影"问题,而且具有较好的图像视觉质量。     

基于小波变换直方图规定的非均匀性校正算法

为了实现红外探测器的自适应校正,提出了一种基于小波变换的中值直方图规定非均匀性自适应校正方法。新算法利用正交小波变换分解图像,分别统计分解后图像像素的时域直方图,对像素邻域直方图进行排序得到中值,利用中值直方图灰度映射得到校正图像,最后把所有尺度校正后的图像反变换得到最终结果。实际应用证明,与同类自适应非均匀校正算法相比,该算法具有校正精度高、速度快的优点。     

基于FPGA的图像自适应AWB系统设计与实现

为了解决常见自动白平衡(Auto White Balance, AWB)方法的场景适应能力不足且实时性较差等问题,提出了一种基于颜色通道直方图重构的自适应AWB方法,并使用现场可编程门阵列(FPGA)对所提出的算法进行硬件电路实现,在校正图像白平衡的同时也确保了系统高速实时处理图像。首先对图像进行限制对比度自适应直方图均衡化(CLAHE)处理来提高图像对比度,然后对图像进行灰度级区间的通道分区统计,对不同场景类别的图像采用颜色直方图匹配或平移的重构方式做自适应处理。实验结果表明,该算法在处理图像白平衡时,相比基于光源估计的AWB算法,色温校正准确率提高了14%,对不同色彩场景有更好的适应性,具有实时处理能力。     

基于3DGMM的多视点视频直方图颜色校正

多视点视频在采集过程中,由于受到摄像机所处位置以及摄像机自身的参数设置等因素的影响,会造成视点间颜色的不一致,针对这一情况,提出基于三维高斯混合模型的多视点视频直方图颜色校正算法。算法首先获取源图像以及目标图像的直方图并检测直方图的峰值个数,然后结合三维高斯混合模型对源图像以及目标图像进行聚类分析,获取中心矢量,最后计算两图像中像素点距离中心矢量的最小欧几里得距离并分割图像,对源图像和目标图像的匹配区域进行直方图匹配校正。实验结果表明,该算法与传统直方图匹配算法相比,避免了校正过度的影响,校正效果较好。     

一种基于直方图匹配的立体视频颜色校正算法

针对立体视频序列视点间颜色不一致的问题,实现基于直方图匹配的立体视频颜色校正算法。深入分析视点图像间颜色存在的乘性和加性差异,结合颜色差异建模,使用直方图匹配算法校正颜色误差。实验结果表明,本文实现的颜色校正算法计算复杂度较低,并且在保持图像视觉效果的同时,能较好的消除参考图像与目标图像之间的颜色差异,是一种有效的立体视频图像颜色校正算法。     

基于直方图相关的图像灰度校正

在对遥感图像进行地貌分析或匹配时,图像的灰度校正是必不可少的环节,其结果直接影响后续处理。提出基于线性点运算的直方图相关的灰度校正算法,首先将待校正图与预期结果图进行直方图灰度级的一致化,求解斜率系数,然后通过直方图相关方法解出平移量,最后利用线性点运算完成图像的灰度校正。结果表明,算法对由光照条件引起的灰度变化的校正具有较高的稳健性。     

改进的单幅红外图像局部自适应非均匀校正

为了实现对单幅红外图像的非均匀性校正并且对局部细节的校正效果进行优化,提出了一种局部自适应的非均匀校正算法。算法利用红外焦平面阵列的固定图像噪声呈单方向分布的特性,采用基于高斯权重思想的中值直方图非均匀算法实现红外图像的单参数校正;然后将图像分块,使图像的各局部都能够自适应地选择各自最合适的校正参数,达到优化细节的校正效果。实验结果及分析表明:与单参数中值直方图非均匀校正算法相比,提出的算法在均方根误差、峰值信噪比、图像平滑性等方面都得到了进一步的改善,并且保留了更多的图像细节,为非均匀校正提供了一种方法。     

白天观星红外星图噪声抑制算法

单点噪声和条纹非均匀性噪声是白天观星红外星图中的两种典型噪声,严重影响了星图识别的后续处理。针对两种噪声产生的原因和特点,提出改进的单点噪声去噪算法,即用局部窗口遍历扫描全图检测出单点噪声,然后用全局均值进行补偿;又提出列直方图偏移校正算法去除条纹非均匀性噪声,即依据列偏移校正模型,对每列直方图相对于全局直方图的峰值位置偏移进行校正。实验结果表明:所提出的噪声抑制算法对红外星图去噪效果良好,星点目标峰值信噪比可从7.4提高到12.8,并且算法计算简单,可以在单帧时间内完成,满足星图实时预处理的应用要求。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.