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1.
Ti在SiCf/Cu复合材料中用作界面改性剂的研究   总被引:1,自引:0,他引:1  
利用箔-纤维-箔法制备了SiCf/Ti/Cu复合材料,用于模拟研究Ti在SiC纤维增强铜基复合材料中用作界面改性涂层时的作用及其界面反应情况.室温拉伸测试表明,该复合材料的轴向抗拉强度相对于基体Cu和Ti的提高了58%.采用SEM,EDS和XRD等方法研究了断口特征、SiCf/Ti界面和Ti/Cu界面反应产物.结果表明:SiC纤维与Ti的结合良好,Ti/Cu界面有多层反应产物,而Ti层与Cu层的脱粘多发生在不同反应层之间;SiC/Ti界面反应产物为TiC;Ti/Cu界面的反应产物主要为4层分布,分别为CuTi2、CuTi、Cu4Ti3和Cu4Ti.  相似文献   

2.
采用箔-纤维-箔(FFF)法分别制备无涂层、C涂层和Cu/Mo双涂层改性的SiCf/Ti6Al4V复合材料,对制备态复合材料的力学性能和界面微观组织进行对比分析,进一步研究不同真空热暴露处理对Cu/Mo双涂层改性复合材料的界面微区的影响规律。结果表明,制备态下Cu/Mo涂层比C涂层较好地改善了复合材料的界面组织和性能,且对基体和纤维中元素扩散均具有一定的阻挡作用;求得900℃下SiCf/Cu/Mo/Ti6Al4V界面反应的生长动力学公式为H=1.380t1/2+5.397。  相似文献   

3.
王超  张旭  王玉敏  杨青  杨丽娜  张国兴  吴颖  孔旭  杨锐 《金属学报》2020,56(9):1275-1285
采用磁控溅射先驱丝法并结合热等静压技术制备了SiC_f/Ti65复合材料,对其在650、750、800和900℃进行了长时间热暴露实验。结果表明,热等静压和热暴露过程中,SiC_f/Ti65复合材料内部各元素同时参与界面互扩散和基体相变扩散。热等静压后,SiC_f/Ti65复合材料界面反应层产物主要为TiC,基体中相变产物为等轴的(Zr, Nb)_5Si_4。热暴露过程中,界面反应逐渐生成了Ti_5Si_3和(Zr, Nb)_5Si_4,基体相变则有了Ti_3(Al, Sn)C和TiC生成。SiC_f/Ti65复合材料反应层长大激活能为93 kJ/mol,该材料界面可以在650℃及以下温度长时间保持稳定。  相似文献   

4.
SiC纤维增强Ti基复合材料(SiCf/Ti)容易发生界面反应,从而影响其力学性能。开展界面反应和动力学的研究,对于SiCdTi复合材料的制备和服役具有指导意义。采用扫描电镜、透射电镜和X射线衍射分析了SICf/Ti-6Al—4V复合材料的界面反应及其动力学,发现SiC纤维的C涂层与Ti-6Al—4V反应形成粗晶粒的和细晶粒的TiC,长期高温热处理使得界面反应加剧,TiC层加厚,当C涂层完全消耗后,界面反应层中除了TiC外,还出现了Ti3SiC2。研究表明,界面反应层的加厚受元素扩散控制,服从抛物线规律,求出的动力学参数Q为268.8kJ/mol,k为0.0057m/s1/2。  相似文献   

5.
研究了两种纤维增强钛基复合材料(SCS-6/Ti-6Al-4V和SCS-6/TA6V)的界面.实验结果表明,两种复合材料中SiC纤维与基体合金均结合得较好,界面反应层较薄,其厚度分别为0.8和0.6μm.界面反应层随热处理时间的延长、热处理温度的升高而增厚.EDX分析结果表明,界面相中只含有Al,V,Si和Ti元素.  相似文献   

6.
通过SiC/Ti6Al4V钛基复合材料的制备及在不同条件下的热处理试验,利用SEM,EDS及XRD分析技术研究复合材料界面反应产物相的形成及反应元素的扩散路径。结果表明:反应元素如C,Ti,Si在界面反应层中出现浓度波动,合金元素Al并没有显著扩散进入界面反应产物层,而是在界面反应前沿堆积,其界面反应产物被确认为Ti3SiC2,TiCx,Ti5Si3C,和Ti3Si;在界面反应初期,存在着TiC+Ti5Si3Cx双相区,当形成各界面反应产物单相区时,SiC/Ti6Al4V复合材料界面反应扩散的完整路径应为:SiC | Ti3SiC2 | Ti5Si3Cx | TiCx | Ti3Si| Ti6Al4V+TiCx;界面反应产物层的生长受扩散控制,遵循抛物线生长规律,其生长激活能Q^k及k0分别为290.935 kJ·mol^-1,2.49× 10^-2 m·s^-1/2.  相似文献   

7.
SCS-6 SiC纤维增强钛基复合材料的界面反应   总被引:3,自引:0,他引:3  
SCS-6 SiC纤维增强Super α2钛基复合材料界面反应较严重,其反应产物分布可达6层之多;SCS-6 SiC/Ti2AlNb及SCS-6 SiC/IMI834复合材料仅形成3-4层界面反应产物SCS-6 SiC/IMI834复合材料在界面处形成的S2硅化物可在一定温度下阻止反应的进一步进行,使复合材料具有很好的热稳定性.对界面反应热力学研究表明,Ti3Al+C→Ti3AlC反应导致了界面反应产物Ti3AlC的形成.  相似文献   

8.
研究了SiCf/Cu基复合材料分别在有无Ti6Al4V界面改性涂层两种情况下的纵向热膨胀行为,并采用扫描电镜对热循环后的试样进行显微形貌观察。结果表明,界面结合强度对纤维增强金属基复合材料的纵向热膨胀行为有很大影响。对于没有Ti6Al4V涂层的复合材料,其热膨胀行为不稳定,在经历连续两次热循环后,其纵向均表现为正的残余应变,原因是基体发生了严重的界面脱粘、滑移和膨胀;而对于有Ti6Al4V涂层的复合材料,其纵向热膨胀系数明显减小,两次热循环后其尺寸保持稳定,纤维/基体界面结合也保持稳定。  相似文献   

9.
分别以Ag-Cu-Ti与Cu-Mn-Ni为钎料在不同工艺下进行了Ti6Al4V钛合金与YG8硬质合金的高频感应连接。采用扫描电镜(SEM)、能谱分析(EDS)对钎焊界面的显微组织、成分分布进行了考察分析,并检测了接头的抗拉强度。结果表明:采用Ag基钎料时,Ti6Al4V侧界面反应层为Ti(s.s)+Ti_2Cu/Ti_2Cu/Ti_2Cu+TiCu/TiCu/Ti_3Cu_4/TiCu_2+TiCu_4,YG8侧界面反应层为Ti_3Cu_4/TiCu_2+TiCu_4,在钎缝中心形成了韧性较好的Ag(s.s)+TiCu层,接头最高抗拉强度289 MPa;采用Cu基钎料时界面结构为Ti6Al4V/β-Ti/TiCu+Ti_3Cu_4+TiMn+Cu(s.s)/YG8,接头最高抗拉强度206 MPa。通过对比表明Ag基钎料所得到钎缝韧性较好,但反应时间过长易在母材与反应层间形成裂纹;Cu基钎料呈镶嵌结构,钎焊温度过高镶嵌结构破坏,接头性能急剧下降。  相似文献   

10.
对采用磁控溅射先驱丝工艺制备的SiC_f/Ti60复合材料进行不同温度下长时间热暴露实验,分析了热等静压态和热暴露态复合材料界面区结构稳定性及元素扩散规律。研究结果表明,SiC纤维中C、Si元素和Ti60基体中Ti及其它合金元素进行互扩散;界面反应层主要产物为Ti C,Ti C层外侧环绕着一层硅化物;基体中的Ti C主要集中分布在α钛晶界处。SiC_f/Ti60复合材料反应层厚度长大受扩散控制并与温度的关系遵循阿伦尼乌斯规律,界面反应层长大指数因子为2.27×10~(-4) m/s~(1/2),界面反应层长大激活能为118 k J/mol。  相似文献   

11.
Results on the deposition and characterization of TiOxNy/ZrOxNy multilayers, with bilayer periods of 20 and 400 nm, are presented. The coatings were deposited on TiNiNb alloy substrates by the pulsed magnetron sputtering method. The elemental composition, hardness, adhesion and corrosion resistance of the coatings were analyzed.As resulted from the XPS analysis, the individual layers consisted of a mixture of titanium or zirconium oxynitrides and corresponding oxides. X-ray analysis revealed that the coatings were amorphous. Only slight differences between the microhardness and adhesion values of the coatings with small and large bilayer period Λ were found. The experiments also showed that the multilayered coatings improved the corrosion resistance of the uncoated alloy and reduced the amount of ion release in artificial body fluids.  相似文献   

12.
Zinc-blende BxAl1−xAs and BxAl1−xyInyAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of BxAl1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained BxAl1−xAs alloys. AFM measurements show that RMS roughness of BxAl1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of BxAl1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk BxAl1−xyInyAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.  相似文献   

13.
镍钛形状记忆合金(NiTi-SMA)具有较好的耐腐蚀和机械性能,在口腔和临床医学中有着大量而广泛的应用。NiTi-SMA腐蚀后释放Ni2+会引发细胞毒性和过敏反应,进一步提高NiTi-SMA的耐蚀性是目前生物医学材料领域发展的核心之一。本文对近年来国内外有关口腔医学和临床医学中常用NiTi-SMA的腐蚀研究现状进行了总结,同时也对NiTi-SMA增材制造及表面改性技术进行了评述,以期为开发高性能抗腐蚀生物医用NiTi-SMA提供一定的指导意义。  相似文献   

14.
近年来,在高熵合金基础上发展起来的高熵陶瓷逐渐引起了研究者的广泛关注,其出现为开发高性能的无机非金属材料提供了新的设计思路。本文采用固相法制备了BaMO3基钙钛矿型高熵陶瓷Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3 (x = 0, 2.3%, 5.3%, 8.3%, 11.3%),并研究了Li含量对高熵陶瓷物相结构、微观形貌及介电性能的影响。结果表明,Li含量对陶瓷结构的影响不大,陶瓷均保持立方钙钛矿结构,且无杂相产生;陶瓷的晶粒尺寸相对较均匀。当x = 0时,即B位七元等摩尔比Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li1/7)O3高熵陶瓷,其介电常数达到了最大值2920 (@100 Hz),相较于已报道的不掺Li的六元高熵钙钛矿陶瓷Ba(Ti1/6Sn1/6Zr1/6Hf1/6Nb1/6Ga1/6)O3提升了近50倍。  相似文献   

15.
Superconductors Ba1−xKxBiO3 and body-centered double perovskites Ba1−xKxBi1−yNayO3 have been selectively synthesized by a facile hydrothermal route. The appropriate ratio and adding sequence of initial reagents, alkalinity, reaction temperature and time are the critical factors that influence the crystal growth of the compounds. The purity and homogeneity of the crystals were detected by the ICP, SEM, EDX and TEM studies. Magnetic measurements show that the superconducting transition temperatures TC of Ba1−xKxBiO3 decrease from 22 K (for x = 0.35) to 8 K (for x = 0.55) with increasing the K doping level.  相似文献   

16.
A modified Al-Cu alloy with high tensile strength and ductility of about 574.0 MPa and 10.4%, respectively, was obtained by adding multiple rare earth oxides (PrxOy and LaxOy) as modifier. Compared with the unmodified Al-Cu alloy, the tensile strength and ductility of the modified sample were increased by 24.3% and 42.5%, respectively. The improvement both in the strength and ductility may attribute to the finer crystal grains and dendrites, more homogeneously distributed θ′ phase precipitates and the intermetallic compounds formed at the crystal grain boundaries as well as in the space of the dendrites.  相似文献   

17.
The a.c. susceptibility and high field magnetization on TbRh2−xPdxPdxSi2 and TbRu2−xPdxSi2 compounds were investigated up to 140 kOe. The (T,x) magnetic phase diagrams were determined. For both systems, an increase in the Pd content causes a decrease in the Néel temperature and changes the magnetization curves.  相似文献   

18.
采用Ti/Cu/Ni中间层对Si3N4陶瓷进行二次部分瞬间液相(PTLP)连接,研究连接工艺参数对Si3N4/Ti/Cu/Ni连接强度的影响,同时研究了连接强度随试验温度的变化规律。结果表明,在该试验条件下,室温连接强度随着二次连接温度的提高和二次保温时间的延长而提高,改变连接工艺参数对Si3N4/Ti/Cu/Ni二次PTLP连接界面反应层厚度无明显影响;连接强度在试验温度400℃时达到最大,随后随试验温度升高,连接强度降低,但在800℃前,其高温强度具有很好的稳定性。  相似文献   

19.
Thermoelectric properties of Sn1−xyTiy SbxO2 ceramics were investigated in detail. The addition of Sb into SnO2 matrix increased the electric conductivity, σ. The increase in the σ value should be caused by the increase in the carrier concentration. The Seebeck coefficients of all the samples were negative, which means that these samples have n-type conduction. The samples of this study have porous structure. The maximum Z value of all the samples measured in this study was 2.4 × 10−5 K−1.  相似文献   

20.
The electrical conductivity (σ), Seebeck coefficient (S), and power factor (σS2) of perovskite-type LaFeO3, La1−xSrxFeO3 [0.1 ≤ x ≤ 0.4] and LaFe1−yNiyO3 [0.1 ≤ y ≤ 0.6] were investigated in the temperature range of 300–1100 K to explore their possibility as thermoelectric materials. The electrical conductivity of LaFeO3 showed semiconducting behavior, and its Seebeck coefficient changed from positive to negative around 650 K with increasing temperature. The electrical conductivity of LaFeO3 increased with the substitutions of Sr and Ni atoms, while its Seebeck coefficient decreased. The Seebeck coefficient of La1−xSrxFeO3 was positive, whereas that of LaFe1−yNiyO3 changed from positive to negative with increasing Ni content. The substitutions of Sr and Ni were effective in increasing the power factor of LaFeO3; 0.0053 × 10−4 Wm−1 K−2 for LaFeO3 (1050 K), 1.1 × 10−4 Wm−1 K−2 for La1−xSrxFeO3 (x = 0.1 at 1100 K) and 0.63 × 10−4 Wm−1 K−2 for LaFe1−yNiyO3 (y = 0.1 at 1100 K).  相似文献   

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