Rapid thermal melted TiO2 nano-particles into ZnO nano-rod and its application for dye sensitized solar cells

TiO₂ nano-particles with an anchored ZnO nano-rod structure were synthesized using the hydrothermal method to grow ZnO nano-rods and coated TiO₂ nano-particles on ZnO nano-rods using the rapid thermal annealing method on ITO conducting glass pre-coated with nano porous TiO₂ film. The XRD study showed that there was little difference in crystal composition for various types of TiO₂ nano-particles anchored to ZnO nano-rods. The as-prepared architecture was characterized using field-emission scanning electron microscopy (FE-SEM). Films with TiO₂ nano-particles anchored to ZnO nano-rods were used as electrode materials to fabricate dye sensitized solar cells (DSSCs). The best solar energy conversion efficiency of 2.397% was obtained by modified electrode material, under AM 1.5 illumination, achieved up to J_sc = 15.382 mA/cm², V_oc = 0.479 V and fill factor = 32.8%.     

Hydrothermal synthesis, characterization, photocatalytic activity and dye-sensitized solar cell performance of mesoporous anatase TiO2 nanopowders

Mesoporous anatase TiO₂ nanopowder was synthesized by hydrothermal method at 130 °C for 12 h. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected-area electron diffraction (SAED), HRTEM, and Brunauer-Emmett-Teller (BET) surface area. The as-synthesized sample with narrow pore size distribution had average pore diameter about 3-4 nm. The specific BET surface area of the as-synthesized sample was about 193 m²/g. Mesoporous anatase TiO₂ nanopowders (prepared by this study) showed higher photocatalytic activity than the nanorods TiO₂, nanofibers TiO₂ mesoporous TiO₂, and commercial TiO₂ nanoparticles (P-25, JRC-01, and JRC-03). The solar energy conversion efficiency (η) of the cell using the mesoporous anatase TiO₂ was about 6.30% with the short-circuit current density (Jsc) of 13.28 mA/cm², the open-circuit voltage (Voc) of 0.702 V and the fill factor (ff) of 0.676; while η of the cell using P-25 reached 5.82% with Jsc of 12.74 mA/cm², Voc of 0.704 V and ff of 0.649.     

Structural and optical properties of nanocrystalline CdSe and Al:CdSe thin films for photoelectrochemical application

Nanocrystalline CdSe and Al:CdSe semiconductor thin films have been successfully synthesized onto amorphous and FTO glass substrates by spray pyrolysis technique. Aqueous solutions containing precursors of Cd and Se have been used to obtain good quality films. The optimized films have been characterized for their structural, morphological, wettability and optical properties. X-ray diffraction (XRD) studies show that the films are polycrystalline in nature with hexagonal crystal structure. Scanning electron microscopy (SEM) studies show that the film surface is smooth, uniform and compact in nature. Water wettability study reveals that the films are hydrophilic behavior. The formation of CdSe and Al:CdSe thin film were confirmed with the help of FTIR spectroscopy. UV–vis spectrophotometric measurement showed a direct allowed band gap lying in the range 1.673–1.87 eV. Output characteristics were studied by using cell configuration n- CdSe/Al:CdSe |1 M (NaOH + Na₂ + S)|C. An efficient solar cell having a power conversion efficiency of 0.38% at illumination 25 mW cm⁻² was fabricated.     

Surface treatment of TiO2 films for dye-sensitized solar cells using atmospheric-pressure non-equilibrium DC pulse discharge plasma jet

In this paper, we report the utilization of the DC pulse discharge plasma jet technique as a means for the preparation of titanium oxide (TiO₂) films on fluorine dope tin oxide (FTO) coated glass substrates used for dye-sensitized solar cells (DSCs). The TiO₂ film made on these experimental bases exhibited the BET specific surface area of 95 m²/g, the pore volume of 0.3 cm²/g and the TEM particle size of ∼25 nm. The DSCs made by the TiO₂ film exhibited an energy conversion efficiency of 5.7% at 100 mW/cm² light intensity. Consequently, we believe that the optimization between the specific surface area and photocurrent density of TiO₂ film was achieved by the plasma surface treatment which also contributed to the improvement of energy conversion efficiency of DSCs.     

Size dependent electron transfer from CdTe quantum dots linked to TiO2 thin films in quantum dot sensitized solar cells

In this present study, we demonstrate the size dependent charge transfer from CdTe quantum dots (QDs) into TiO₂ substrate and relate this charge transfer to the actual behavior of a CdTe sensitized solar cell. CdTe QDs was synthesized using mercaptopropionic acid as the capping agent. The conduction band offset for TiO₂ and CdTe QDs indicates thermodynamically favorable band edge positions for smaller QDs for the electron-transfer at the QD–TiO₂ interface. Time-resolved emission studies were carried out for CdTe QD on glass and CdTe QD on TiO₂ substrates. Results on the quenching of QD luminescence, which relates to the transfer kinetics of electrons from the QD to the TiO₂ film, showed that at the smaller QD sizes the transfer kinetics are much more rapid than at the larger sizes. I–V characteristics of quantum dot sensitized solar cells (QDSSC) with different sized QDs were also investigated indicating higher current densities at smaller QD sizes consistent with the charge transfer results. The maximum injection rate constant and photocurrent were obtained for 2.5 nm CdTe QDs. We have been able to construct a solar cell with reasonable characteristics (V_oc = 0.8 V, J_sc = 1 mA cm⁻², FF = 60%, η = 0.5%).     

Tuning photocurrent response through size control of CdSe quantum dots sensitized solar cells

The photovoltaic characterization of CdSe quantum dots sensitized solar cells (QDSSCs) by tuning band gap of CdSe quantum dots (QDs) through size control has been investigated. Fluorine doped tin oxide (FTO) substrates were coated with 20 nm in diameter TiO₂ nanoparticles (NPs). Pre-synthesized colloidal CdSe quantum dots of different sizes (from 4.0 to 5.4 nm) were deposited on the TiO₂-coated substrates using direct adsorption (DA) method. The FTO counter electrodes were coated with platinum, while the electrolyte containing I^?/I ₃ ^? redox species was sandwiched between the two electrodes. The current density-voltage (J-V) characteristic curves of the assembled QDSSCs were measured for different dipping times, and AM 1.5 simulated sunlight. The maximum values of short circuit current density (J_sc) and conversion efficiency (η) are 1.62 mA/cm² and 0.29 % respectively, corresponding to CdSe QDs of size 4.52 nm (542 nm absorption edge) and of 6 h dipping time. The variation of the CdSe QDs size mainly tunes the alignment of the conduction band minimum of CdSe with respect to that of TiO₂ surface. Furthermore, the J_sc increases linearly with increasing intensity of the sun light, which indicates the sensitivity of the assembled cells.     

Spray deposition and property analysis of anatase phase titania (TiO2) nanostructures

Anatase phase titanium dioxide thin films have been deposited at various substrate temperatures by chemical spray pyrolysis of an aerosol of titanyl acetylacetonate. Deposited TiO₂ films were nanocrystalline and preferentially oriented along [101] direction, uniform and adherent to the glass substrate. Best films processed at 450 °C were characterized to analyze its phase composition, texture, roughness, optical and electrical properties. X-ray photoelectron spectroscopy revealed that the surface of the film has only the Ti⁴⁺ cations to form perfect TiO₂ stoichiometry with less amount of hydration. Atomic force microscopy image demonstrated the existence of homogeneous and rough surface, suitable for electrocatalytic applications. The film has an optical transmittance more than 90% and the refractive index of 2.07 was recorded at the wavelength 633 nm. Due to nano-sized grains, obtained optical band gap (3.65 eV) of the TiO₂ thin film was larger than that of the bulk TiO₂ (3.2 eV). Calculated porosity of the films 0.44, revealed the porous nature of the films. Hall measurements indicated that these materials are p-type and yield a carrier density of the order 8.8 × 10²⁰ cm⁻³ and a carrier mobility of 0.48 × 10⁻⁶ cm²/Vs. The dc electrical conductivity was therefore very low (8.91 × 10⁻⁶ S/cm) because of lower value of mean free path of the charge carriers (4.36 × 10⁻¹¹ cm). It gives an impression that the process of spray pyrolysis provides an easy way to tailor make thin films possessing superior properties.     

Preparation of TiO2 paste using poly(vinylpyrrolidone) for dye sensitized solar cells

The surface morphology of titanium oxide (TiO₂) films as a photoanode in dye sensitized solar cells plays a vital role in converting light to electricity. Therefore, TiO₂ films were prepared using TiO₂ paste with different compositions of poly(vinylpyrrolidone) (PVP) as a binder to optimize their physico-chemical properties. The paste was prepared with commercial TiO₂ powder mixed with acetylacetone, PVP, 4-octylphenol polyethoxylate, acetic acid and ethanol. The chemical composition remains the same for all pastes except PVP. The quantity of the PVP was optimized in such a way that it provides a thick film with a good network connection. The impact of the quantity of PVP in the TiO₂ paste was analyzed. The prepared TiO₂ film structure was characterized by X-ray diffraction. The surface morphology was analyzed by scanning electron microscopy. The electrochemical performance of the prepared TiO₂ as a photoanode was also investigated. Among the four different photoanodes, the cells fabricated with a TiO₂ film prepared with 0.4 g of PVP exhibited the highest power conversion efficiency of 6.77%, short-circuit photocurrent density and open circuit voltage of 12.38 mA/cm² and 0.77 V, respectively.     

Interaction of highly dissociated low pressure hydrogen plasma with W-C thin film deposits

Thin film deposits of carbon and tungsten on stainless steel substrate were prepared by RF sputtering of a tungsten target in acetylene atmosphere. At the target bias of − 1700 V and the target current of 30 mA cm^− 2, a rather uniform film containing 50 at.% of C and 50 at.% of W was deposited. The thickness of the deposited film was about 1 μm. Samples were exposed to highly dissociated hydrogen plasma created by a microwave discharge at the power of 1000 W. Some samples were heated additionally by concentrated solar radiation. After plasma treatment, the samples were characterized by X-Ray Diffraction and Auger Electron Spectroscopy. The results showed that aggressive hydrogen plasma allows for the removal of carbon from the deposits at moderated temperatures. Prolonged treatment showed formation of highly crystalline pure tungsten, and finally the tungsten film interacted with the substrate forming a thin film rich of Fe₇W₆ compound. The range of temperature and/or treatment time for the removal of carbon from the W-C film was found very narrow.     

Enhanced photovoltaic performance of solar cell based on front-side illuminated CdSe/CdS double-sensitized TiO2 nanotube arrays electrode

Free-standing TiO₂ nanotube (NT) arrays have been prepared by a two-step anodization method. These translucent TiO₂ NT arrays can be transferred to the fluorine-doped tin oxide glass substrates to form front-side illuminated TiO₂ NT electrodes. The TiO₂ NT electrodes were double-sensitized by CdSe/CdS quantum dots (QDs) through successive ionic layer adsorption and reaction (SILAR) process. The absorption range of the TiO₂ NT electrode was extended from ~380 to 700 nm after sensitization with CdSe/CdS QDs. The SILAR cycles were investigated to find out the best combination of CdS and CdSe QDs for photovoltaic performance. The power conversion efficiency of 2.42 % was achieved by the CdSe(10)/CdS(8)/TiO₂ NT solar cell. A further improved efficiency of 2.57 % was obtained with two cycles of ZnS overlayer on the CdSe(10)/CdS(8)/TiO₂ NT electrode, which is 45.19 % higher than that of back-side illuminated solar cell. Furthermore, the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell possesses a higher stability than CdSe(10)/CdS(8)/TiO₂ NT solar cell during the same period. The better photovoltaic performance of the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell has demonstrated the promising value to design quantum dots-sensitized solar cells with double-sensitized front-side illuminated TiO₂ NT arrays strategy.     

Cosensitized Quantum Dot Solar Cells with Conversion Efficiency over 12%

The improvement of sunlight utilization is a fundamental approach for the construction of high‐efficiency quantum‐dot‐based solar cells (QDSCs). To boost light harvesting, cosensitized photoanodes are fabricated in this work by a sequential deposition of presynthesized Zn–Cu–In–Se (ZCISe) and CdSe quantum dots (QDs) on mesoporous TiO₂ films via the control of the interactions between QDs and TiO₂ films using 3‐mercaptopropionic acid bifunctional linkers. By the synergistic effect of ZCISe‐alloyed QDs with a wide light absorption range and CdSe QDs with a high extinction coefficient, the incident photon‐to‐electron conversion efficiency is significantly improved over single QD‐based QDSCs. It is found that the performance of cosensitized photoanodes can be optimized by adjusting the size of CdSe QDs introduced. In combination with titanium mesh supported mesoporous carbon as a counterelectrode and a modified polysulfide solution as an electrolyte, a champion power conversion efficiency up to 12.75% (V_oc = 0.752 V, J_sc = 27.39 mA cm^?2, FF = 0.619) is achieved, which is, as far as it is known, the highest efficiency for liquid‐junction QD‐based solar cells reported.     

Fabrication of quantum dot-sensitized solar cells with multilayer TiO2/PbS(X)/CdS/CdSe/ZnS/SiO2 photoanode and optimization of the PbS nanocrystalline layer

In this work, two multilayer photoanode structures of TiO₂/PbS(X)/CdS/ZnS/SiO₂ and TiO₂/PbS(X)/CdS/CdSe/ZnS/SiO₂ were fabricated and applied in quantum dot-sensitized solar cells (QDSCs). Then, the effect of PbS QDs layer on the photovoltaic performance of corresponding cells was investigated. The sensitization was carried out by PbS and CdS QDs layers deposited on TiO₂ scaffold through successive ionic layer adsorption and reaction (SILAR) method. The CdSe QDs film was also formed by a fast, modified chemical bath deposition (CBD) approach. Two passivating ZnS and SiO₂ layers were finally deposited by SILAR and CBD methods, respectively. It was shown that the reference cell with TiO₂/CdS/ZnS/SiO₂ photoanode demonstrated a power conversion efficiency (PCE) of 3.0%. This efficiency was increased to 4.0% for the QDSC with TiO₂/PbS(2)/CdS/ZnS/SiO₂ photoelectrode. This was due to the co-absorption of incident light by low-bandgap PbS nanocrystalline film and also the CdS QDs layer and well transport of the charge carriers. For the CdSe included QDSCs, the PbS-free reference cell represented a PCE of 4.1%. This efficiency was improved to 5.1% for the optimized cell with TiO₂/PbS(2)/CdS/CdSe/ZnS/SiO₂ photoelectrode. The maximized efficiency was enhanced about 25% and 70% compared to the PbS-free reference cells with and without the CdSe QDs layer.

     

Solid state dye-sensitized solar cell with TiO2/NiO heterojunction: Effect of particle size and layer thickness on photovoltaic performance

The present work demonstrates the usefulness of nickel oxide as a hole transporting material in solid state dye-sensitized solar cells (SSDSSCs). We report on the photovoltaic performances of sensitized TiO₂/NiO heterojunctions, and demonstrate that the TiO₂ film thickness and morphology, as well as NiO film thickness, have significant effects on the photovoltaic behaviour of TiO₂/NiO SSDSSC. Under 1 sun AM1.5G simulated illumination, the SSDSSCs demonstrated best photovoltaic performance with a short circuit photocurrent density, open circuit voltage, fill factor and efficiency of 0.91 mA cm⁻², 780 mV, 40% and 0.3%, respectively. This study draws attention to the feasibility of enhancing the photovoltaic performance in SSDSSC devices through development of appropriately designed sensitized TiO₂/NiO heterojunctions.     

Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment

Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The doping precursor, a phosphorous-doped titanium dioxide (TiO₂) solution, is synthesized using a sol-gel method and spin-coated onto the sample. After laser irradiation, the polycrystalline silicon grain size was about 0.5∼1.0 μm with a carrier concentration of 2 × 10¹⁹ cm^− 3 and electron mobility of 92.6 cm²/V s. The average polycrystalline silicon reflectance can be reduced to a value of 4.65% at wavelengths between 400 and 700 nm, indicating the upper TiO₂ film of antireflection coating.     

Chemical bonding structure of TiO2 thin films grown on n-type Si

Titanium dioxide thin films were obtained by RF magnetron sputtering system with different Ar and O atmospheres. Chemical bonding structures of the thin films were investigated using the Fourier transform infrared spectroscopy (FTIR) in the range of 400-7500 cm^− 1 for as-deposited and conventionally thermal annealed films at different temperature in air. These structural characterizations of the films were carried out by describing the low-frequency fluctuations of the FTIR spectra using the noninvasive (i.e. error controllable) procedure of the optimal linear smoothing. This approach is based on the criterion of the minimal relative error in selection of the proper smoothing window. It allows the receiving an optimal separation of a possible trend from the high-frequency fluctuations, defined as a random sequence of the relative fluctuations possessing zero trends. Thus, the noise can be read and extra information about the structures was then obtained by comparing with the experimental results. In the film annealed at 900 °C, the rutile phase was the dominant crystalline phase as revealed by infrared spectroscopy. At the annealing temperatures lower than 900 °C, both the anatase and the rutile phases were coexisting. In addition, symmetric and asymmetric Si-O-Si vibrations modes were observed at around 1000 cm^− 1 and 800 cm^− 1, respectively. These peaks suggest that a thin SiO₂ film was formed at the TiO₂/Si interface during the growth and the annealing of the TiO₂ films. It was also observed that the reactivity between TiO₂ film and Si substrate is increased with the increasing annealing temperature.     

Optical properties of TiO2 thin films deposited on polycarbonate by ion beam assisted evaporation

TiO₂ thin films were deposited on polycarbonate (PC) substrate by ion beam assisted evaporation. The grain size increased with the ion anode voltage and film thickness. The TiO₂ thin films had an amorphous structure. Moiré deflectometry was used to measure the nonlinear refractive indices of TiO₂ thin films on PC substrates. The nonlinear refractive index was measured to be of the order of 10^− 8 cm² W^− 1 and a change in refractive index was of the order of 10^− 5. Dense TiO₂ films exhibited high linear refractive indices, red-shift of the optical absorbance, and absorbance in the near-IR region.     

Structural, electrical and optical properties of ITO films with a thin TiO2 seed layer prepared by RF magnetron sputtering

Tin-doped indium oxide (ITO) films were deposited by RF magnetron sputtering on TiO₂-coated glass substrates (the TiO₂ layer is usually called seed layer). The properties of ITO films prepared at a substrate temperature of 300 °C on bare and TiO₂-coated glass substrates have been analyzed by using X-ray diffraction, atomic force microscope, optical and electrical measurements. Comparing with single layer ITO film, the ITO film with a TiO₂ seed layer of 2 nm has a remarkable 41.2% decrease in resistivity and similar optical transmittance. The glass/TiO₂ (2 nm)/ITO film achieved shows a resistivity of 3.37 × 10⁻⁴ Ω cm and an average transmittance of 93.1% in the visible range. The glass/TiO₂ may be a better substrate compared with bare glass for depositing high quality ITO films.     

Transparent conducting Al and Y codoped ZnO thin film deposited by DC sputtering

Transparent conducting Al and Y codoped zinc oxide (AZOY) thin films with high transparency and low resistivity were deposited by DC magnetron sputtering. The effects of substrate temperature on the structural, electrical and optical properties of AZOY thin films deposited on glass substrates have been investigated. X-ray diffraction spectra indicate that no diffraction peak of Al₂O₃ or Y₂O₃ except that of ZnO (0 0 2) is observed. The AZOY thin film prepared at substrate temperature of 250 °C has the optimal crystal quality inferring from FWHM of ZnO (0 0 2) diffraction peak, but the AZOY thin film deposited at 300 °C has the lowest resistivity of 3.6 × 10⁻⁴ Ω-cm, the highest mobility of 30.7 cm² V⁻¹ s⁻¹ and the highest carrier concentration of 5.6 × 10²⁰ cm⁻³. The films obtained have disorderly polyhedral surface morphology indicating possible application in thin film solar cell with good quality and high haze factor without the need of post-deposition etching.     

The optical properties of nanoporous structured titanium dioxide and the photovoltaic efficiency on DSSC

This study examined the characterization of nanoporous structured titanium dioxide and its application to dye-sensitized solar cells (DSSCs). TEM revealed nanopore sizes of 10.0 nm with a regular hexagonal form. When nanoporous structured TiO₂ was applied to DSSC, the energy conversion efficiency was enhanced considerably compared with that using nanometer sized TiO₂ prepared using a hydrothermal method. The energy conversion efficiency of the DSSC prepared from nanoporous structured TiO₂ was approximately 8.71% with the N719 dye under 100 mW cm⁻² simulated light. FT-IR spectroscopy showed that the dye molecules were attached perfectly to the surface and more dye molecules were absorbed on the nanoporous structured TiO₂ than on the nano-sized TiO₂ particles prepared using a conventional hydrothermal method. Electrostatic force microscopy (EFM) showed that the electrons were transferred rapidly to the surface of the nanoporous structured TiO₂ film.     

Optimization of titanium dioxide film prepared by electrophoretic deposition for dye-sensitized solar cell application

Nanocrystalline TiO₂ films were deposited on a conducting glass substrate by the electrophoretic deposition technique. It was found that the thickness of TiO₂ film increased proportionally with an increase in deposition time and deposition voltage. However, as the deposition duration or deposition voltage increased, the film surface was more discontinuous, and microcracks became more evident. The characteristic of the dye-sensitized solar cell using TiO₂ film as a working electrode was analyzed. The results of the energy conversion efficiency and the photocurrent density exhibited a relationship dependent on the TiO₂ thickness. Curve fitting of energy conversion efficiency vs. TiO₂ thickness revealed the optimum solar cell efficiency ~ 2.8% at the film thickness of ~ 14 μm.