回旋壳体内外曲面三坐标激光非接触测量系统的设计与实现

提出了一种非镜面回旋壳体内外曲面三坐标激光非接触测量系统的设计与实现。该系统采用激光和CCD等技术实现了被测体表面三坐标快速自动扫描。论述了系统设计思想 ,介绍了该系统的组成。讨论了激光非接触测量头测量原理及系统测量过程 ,最后介绍了系统主要技术指标。     

基于激光追踪仪多站位测量的CMM空域坐标修正方法

三坐标测量机(CMM)是坐标测量技术中高效率的精密测量系统,随着超精密加工技术的发展,对三坐标测量机测量精度的要求越来越高。考虑到三坐标测量机在测量过程中的弱刚体性状态,提出了一种基于激光追踪仪多站位测量的三坐标测量机空域坐标修正方法。首先建立激光追踪仪多站位测量系统,然后利用激光追踪仪的高精度干涉测长值对被测空域内的三坐标测量机待测点坐标进行修正,最后利用三线性插值方法对三坐标测量机的被测空域坐标进行修正。仿真实验结果表明利用所提出的空域坐标修正方法得到的标准球直径标准差均值为0.098μm,小于三坐标测量机直接测量得到的标准差均值0.118μm,验证了所提出的方法可以有效提高三坐标测量机空域坐标精度。     

回旋壳体内外曲面三坐标激光非接触测量系统的设计与实现

本文介绍了一种回旋壳体内外曲面三坐标激光非接触测量系统的设计与实现。该系统采用激光和CCD等技术实现了被测体表面快速自动扫描。论述了系统设计思想 ,介绍了该系统的组成。讨论了激光非接触测量头测量原理及系统测量过程 ,最后介始了系统主要技术指标。     

四象限探测器用于激光跟踪仪目标脱靶量测量

介绍了基于四象限探测器的激光跟踪仪目标脱靶量测量系统。根据四象限探测器的工作原理和跟踪激光的光斑特性,分析得出目标脱靶量与四象限探测器输出电流信号的关系为非线性。针对非线性关系不易快速解算的难题,文中采用了分段线性插值算法。使用高精度位移平台对测量系统进行标定并开展了测量实验。结果表明,该系统测量速度快,每秒测量次数可达600次以上;测量精度高,在±500μm量程范围内测量精度可达5μm。该系统可以广泛应用于需要微小位移测量的相关领域。     

伺服控制的激光跟踪器

美国马里兰的CHESAPEAKE激光系统公司已制成一种激光坐标测量系统,据称其测量的速度、量程和精度均优于现有系统.此种CMS1000系列激光目标测量系统,在27m3的区域内,用激光干涉测量法测定运动物体的位置,测量精度达到1μm,测量速率超过200Hz.显然,CMS-1000不同于标准的用一伺服控制跟踪器测量三维运动的线性干涉测量法.     

一种新型非接触测控系统

介绍了一种基于DSP的高铲高精度测量系统，他利用CCD和激光进行分步骤测量既提高了测量精度又保持了较高的测量效率，解决了非接触测量中效率和精度的矛盾。     

基于激光原理的曲臂测量系统研制

本测量系统是为解决某单位生产的典型通用关键件--曲臂的各参数测量而专门设计研制的.该系统在激光狭缝扫描原理的基础上,采用激光检测技术、精密机械技术、光电传感技术、现代电子技术与计算机技术,从而实现了对曲臂两臂的平行度误差和轴径尺寸误差的非接触测量.实验证明该系统平行度测量分辨率为0.01 mm,重复性精度为土0.01 mm;轴径尺寸测量范围φ40～180 mm,分辨率为1μ m,重复性精度为±5μm.该系统成功解决了企业在生产加工过程中形状复杂、重量与尺寸较大的工件只靠工艺保证而不能进行检测的实际问题.     

基于时间差法主动调焦式激光测头的研究

在研究动态主动调焦法测量原理的基础上,提出一种新型的动态主动调焦式激光测头的检测方法。该检测方法的核心原理是将位移量的测量转换成了时间差的测量,从而简化了激光测头的结构,提高了激光测头的测量精度和稳定性。介绍了所设计的高精度激光测头测量系统,并对激光测头进行了动态特性的实验。结果表明激光测头的测量分辨力为0 .075μm,测量线性度为0. 45μm,测量范围为±0 .1 mm。     

基于单激光束旋转的深孔直线度测量方法北大核心CSCD

基于激光位移传感器旋转,以回转轴线为基准,提出和验证了一种测量深孔零件直线度的方法。实验结果表明,在选用的激光位移传感器精度为±2μm的情况下,该方法实现了圆孔直线度的在机测量,与三坐标测量机给出的相对真值对比,误差低于12%。该测量模型仅需机床主轴及其进给部件,易于实施。     

激光非接触式大尺寸内径自动测量系统

为了解决大孔径的高精度检测问题,介绍了一种激光非接触式大尺寸内径自动测量系统。该系统具有灵活可控的运动机构、稳定可靠的定心机构、同步伸缩的支撑机构、对称协调的扫描机构,可实现轴向自动行走、高精度同轴定位和快速扫描测量。高可靠性的控制系统和无线传输模式使其实现了远距离的实时控制和可靠性测量。高精度的温度采集模块实时监测环境温度的变化,便于温度补偿。以VC++为平台的上位机软件,集数据处理与实时显示于一体,操作极其方便。另外,该系统采用相对测量原理、高精度激光位移传感器与标定好尺寸的测量臂相结合,使系统测量范围达到Ф580～998 mm。高精度的激光位移传感器实现系统的非接触式内径测量,测量精度高。通过对比实验和现场实验对系统的测量精度和重复性进行了验证。结果表明:系统的测量精度与FARO激光跟踪仪测量结果比较差值小于6μm,现场测量重复性精度小于7μm。能够实现管道内径几何参数的测量和管道表面的几何评估及校正。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.