一种制备优质的有机光薄膜的新方法

提出了一种用真空蒸发和真空热压相结合的技术来制备优质有机光学薄膜的方法,用它制成的有机学薄膜中没有任何残留有机溶剂,在旋转过程中也不产生晶化,因而不会对光发生散射,在光通讯器件,有机发光,有机光存储器的制作等方面有广泛的应用前景。     

基于Ag(TCNQ)热透镜效应的全光型开关

Ag(TCNQ)是一种电荷转移型金属有机络合物。用真空蒸发与真空热压相结合的方法使它分散到PMMA ,PHPMA ,PC等高分子树脂中 ,制成了不含任何有机溶剂的透明光学薄膜 ,并证实了它具有光热透镜效应。     

空间光学薄膜技术

随着空间技术的快速发展,光学薄膜技术在我国空间技术中的应用越来越显著,应用领域也越来越广泛。本文概述了目前光学薄膜技术在我国空间技术领域的应用情况以及未来可能的应用领域。鉴于空间环境的特殊性,光学薄膜技术在空间的应用具有特殊的要求,总结了空间环境对于光学薄膜的特殊要求。最后,介绍了表面工程技术重点实验室近年来研究的各类空间用光学薄膜,包括红外滤光片、闪电探测用超窄带滤光片以及线性渐变滤光片等的研究情况及研究结果。     

基于Ag（TCNQ）热透镜效应的全光型开关

Ａｇ（ＴＣＮＱ）是一种电荷转移型金属有机络合物,用真空蒸发与真空热压相结合的方法使它分散到ＰＭＭＡ,ＰＨＰＭＡ,ＰＣ等高分子树脂中,制成了不含任何有机溶剂的透明光学薄膜,并证实了它具有光热透镜效应。     

浅谈国内外光学薄膜技术标准

本文归纳整理了美军标、ISO标准和国内标准这三个体系中与光学薄膜技术相关的标准。在美军标中,与光学薄膜技术相关的标准共7个,根据这些标准侧重的内容进行了分类;在ISO标准中,重点讲述了ISO 9211系列标准的主要内容和发展变化;在国内标准中,列举了光学薄膜技术现行标准,并进行了归类整理。对光学薄膜行业标准的未来发展变化提出展望:美军标仍将长期活跃在光学薄膜行业中;ISO标准中光学薄膜内容将不断完善,在行业内获得广泛应用;国内将涌现更多的光学薄膜技术标准并在技术要求上逐步与ISO标准接轨。     

光学薄膜及其发展现状

介绍了传统光学薄膜的原理,并对反光膜、增透膜、纳米光学薄膜等传统光学薄膜的研究现状及应用情况,以及几种新型光学薄膜如高强度激光器、金刚石及类金刚石膜、软X射线多层膜、光电通信用光学薄膜的研究现状及应用进行了详细分析;最后对光学薄膜的发展前景进行了展望。     

新型低含量羟基有机-无机杂化材料的合成

采用二苯基二羟基硅烷分别和两种不同的硅烷偶联剂γ-甲基丙烯酰氧基丙基三甲氧基硅烷、γ-缩水甘油醚氧丙基三甲氧基硅烷作为先驱体,用无水溶胶-凝胶法合成出有机-无机杂化材料,将其旋涂在硅基片和石英玻璃片上得到杂化光学薄膜.用Fourier红外光谱仪和Raman光谱仪测试了薄膜的红外吸收光谱和Raman散射光谱,用Abbe折...     

光学薄膜的激光诱导损伤与材料带隙的关系

采用多光子吸收电离模型讨论了光学薄膜的激光诱导损伤与其材料带隙的关系,报实际光学薄膜存在大量的非化学计量比化合物缺陷时,损伤阈值的变化,给出了光汪膜的损伤阈民其材料带隙的关系曲线,理论上解释了实际光学薄膜较理想光学薄膜的损伤阈值的主要原因可能是实际光学薄膜中存在大量的非化学计量比化合物缺陷。     

基于计算机辅助的光学薄膜优化设计方法

概述了光学薄膜优化设计的发展和光学薄膜优化设计的原理。详细介绍了当前光学薄膜优化设计中几种常用方法并分析了它们的优缺点，最后预测了光学优化设计方法以后的发展趋势。     

光学薄膜的数字滤波器设计方法

本文给出利用数字滤波器的设计方法设计光学薄膜的具体过程.由数字滤波器设计软件,按照光学薄膜的设计要求给出光学薄膜目标谱传递函数,将光学薄膜传榆矩阵表示为格型数字滤波器传输矩阵的数学形式,导出等光学厚度光学薄膜传递函数的递归关系式.利用光学薄膜传递函数递归关系,采用剥层算法计算出各膜层的折射率,得到满足目标谱传递函数的膜...     

纳米电子器件呼唤真空化学研究

纳米电子器件是微电子器件发展的下一代 ,现有微电子器件的主要材料是极纯的硅、锗和镓砷等晶体半导体。纳米电子器件有可能是以有机或有机 /无机复合晶体薄膜为主要材料 ,要求纯度更高 ,结构更完善。真空制备的清洁环境 ,有希望加工组装出纳米电子器件所要求的结构。故本文建议开展真空化学研究     

2000:薄膜与真空器件

回顾了真空电子器件二十年来的发展，并对今后七年薄膜与真空器件研究和生产的若干趋势作了扼要的叙述。在电子束管方面，高清晰度显象管、扁平显示管、飞点管、高分辨率、等离子体监视屏等仍将继续发展并占有重要的地位。在薄膜方面，硬膜、超导膜和亚稳态薄膜的研究将仍然是真空科学方面的热点。真空微电子器件面临的抉择则在于能否得到新构思的支撑。最后对本学科总体的一些问题提出了看法。     

Spray pyrolyzed β-In2S3 thin films: Effect of postdeposition annealing

Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400 °C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated using the envelope method. Annealing did not affect the optical properties of the film much, but the resistivity of the films showed a drastic decrease and the grain size increased. In₂S₃ thin films have potential use as buffer layer in photovoltaic heterojunction devices.     

三元化合物(MeI-AgI)薄膜的制备及其激子谱的研究

介绍了用真空蒸发技术制备三元化合物体系MeI AgI(Me :K ,Rb ,Cs)中各种材料薄膜的工艺过程 ,为实现不同温度下的光谱测量 ,设计了真空低温测量装置 ,测定并初步分析了薄膜在液氮温度下的激子谱及其规律     

真空蒸镀红荧烯薄膜及其形貌分析

红荧烯(rubrene)即5,6,11,12-四苯基并四苯,是一种重要的小分子有机半导体材料,可以用以制备红荧烯有机场效应管和太阳能光伏器件。本文首先对传统的热蒸发真空系统进行改造,使之能蒸镀有机薄膜。在一定的蒸发温度下,经过不同蒸镀时间蒸镀红荧烯薄膜,蒸镀时间分别为5,6,7,8 h,获得了具有多晶结构的红荧烯薄膜,并对其形貌进行了分析。结果表明非晶结构的红荧烯薄膜首先在硅衬底上生长,非晶红荧烯薄膜生长至一定厚度后,多晶结构的红荧烯从其中形成。     

Integration of carbon nanotubes as hole transport electrode in polymer/fullerene bulk heterojunction solar cells

Transparent and conductive single-walled carbon nanotube (SWNT) thin films were fabricated onto glass substrates and their optical and electrical properties were evaluated. Particular attention was given to the dependence of the conductivity and optical transparency on the thickness of the films. Furthermore, the SWNT thin films were integrated in organic photovoltaic devices as the hole transport electrode. The best photovoltaic performance was observed for the devices utilizing 80 nm SWNT films with a sheet resistance of 362 Ω/sq, and a transmittance of 64% at 520 nm. The experiments reveal that SWNTs films can be used as transparent electrodes for efficient, flexible organic photovoltaic devices.     

Comparative study of physical properties of vapor chopped and nonchopped Al2O3 thin films

Aluminium oxide being environmentally stable and having high transmittance is an interesting material for optoelectronics devices. Aluminium oxide thin films have been successfully deposited by hot water oxidation of vacuum evaporated aluminium thin films. The surface morphology, surface roughness, optical transmission, band gap, refractive index and intrinsic stress of Al₂O₃ thin films were studied. The cost effective vapor chopping technique was used. It was observed that, optical transmittance of vapor chopped Al₂O₃ thin film showed higher transmittance than the nonchopped film. The optical band gap of vapor chopped thin film was higher than the nonchopped Al₂O₃, whereas surface roughness and refractive index were lower due to vapor chopping.     

Refractive index, optical bandgap and oscillator parameters of organic films deposited by vacuum evaporation technique

In this work, the organic thin films of 8-hydroxyquinoline aluminum (Alq₃), 9,10-bis-(β-naphthyl)-anthrene (ADN), and aluminum (III) bis-(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) were deposited by vacuum evaporation technique, and the optical and dielectric properties of the films were investigated. The optical constants such as refractive index, extinction coefficient, dielectric constant and dissipation factor were determined from the measured transmittance spectra using the envelope method. Meanwhile, the dispersion behavior of the refractive index was studied in terms of the single-oscillator Wemple-DiDomenico (W-D) model, and the physical parameters of the average oscillator strength, average oscillator wavelength, average oscillator energy, the refractive index dispersion parameter and the dispersion energy were achieved. Furthermore, the optical bandgap values were calculated by W-D model and Tauc model, respectively, and the values obtained from W-D model are in agreement with those determined from the Tauc model. These results provide some useful references for the potential application of the thin films in optoelectronic devices.     

Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods

We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spin-coating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DH-DS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment…) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices.     

Lasing action in organic semiconductor thin films

Lasing action in optically pumped thin films of organic semiconductors has recently been demonstrated in a variety of materials employing a variety of cavity configurations. The excitation intensities required for lasing in optically pumped films are comparable to the electrical current densities achievable in light emitting devices based on these materials, opening the door to the possible realization of organic diode lasers. However, the design of diode laser structures is complicated by the relatively low charge carrier mobilities of organics. It has also been shown that the optical properties of organic films under electrical excitation are affected by the formation of polarons, imposing yet another obstacle for realization of these devices. The continuing research on organic diode lasers is motivated by the unique properties of these devices, such as narrow spectral emission linewidth and the temperature independence of laser output power and emission wavelength, which may be advantageous in a number of applications.