顺电相KTN晶体中相位栅的衍射效率分析

为了在应用中提高读出光的衍射效率,必须合理选择参量。采用将KOGELNIK的耦合波理论与Kukhtarev方程相结合,可以得出顺电相KTN晶体中透射型相位栅衍射效率的解析式。对影响光栅衍射效率的各因素进行计算分析,发现衍射效率对入射角、晶体厚度以及外加电场的变化敏感,而45°入射角附近出现较宽的高衍射区。另外,晶体的吸收对衍射效率的影响可以忽略。结果表明,该计算分析有助于在实践中调整参量以获得较高的读出光衍射效率。     

组合外加电场提高Fe∶LiNbO_3中90°记录体全息的衍射效率

针对90°全息记录结构的特殊性,在记录和读出阶段分别施加不同极性的外加电场,实现了Fe∶LiNbO3晶体中高衍射效率的全息记录和读出。在库赫塔列夫(Kukhtarev)方程基础上引入两维耦合波理论,对组合外加电场提高掺铁铌酸锂晶体光折变特性的机理进行了探讨。实验和理论计算结果都表明这种分别在记录和读出过程施加不同极性组合的外加电场是在Fe∶LiNbO3中实现高衍射效率90°记录结构体全息的有效技术方案。     

线性电光效应引起晶体介电张量变化的简单表示

晶体的光折变效应已被广泛应用于全息存贮、四波混频及相位共轭光学中,这些研究不仅对单轴晶体,而且已涉及到双轴晶体,它们的基本原理均基于晶体中全息光栅的衍射原理,而光衍射效率的大小又与晶体线性电光效应引起的光频介电常数的变化有关。文献[2]曾考虑到晶体中电场的方向,给出了部分点群晶体介电张量的变化形式,本文导出线性电光效应作用下所有晶体介电张量变化的普遍表达式,给出主要光折变晶体所属点群的介电张量的变化矩阵。     

影响聚合物分散液晶体全息光栅衍射效率因素的分析

介绍了全息聚合物分散液晶 (H PDLC)体全息光栅形成机理。从理论上分析了衍射效率、折射率调制幅度以及散射对衍射特性的影响。通过实验研究了聚合物分散液晶 (PDLC)微观结构及PDLC材料配方、曝光时间、空间频率、膜层厚度以及外加电压等影响H PDLC光栅衍射效率的主要原因。实验研究表明 ,材料配方是影响最大的因素。较小的膜层厚度、较小的光束夹角和较短的曝光聚合固化时间有利于衍射效率的提高。在光束夹角为17° ,PDLC膜厚为 10 μm ,4 4 1 6nm激光功率 5 0mW ,曝光时间约 30s的情况下 ,利用改进的PDLC配方制作了衍射效率为 90 %的体全息光栅     

组合外加电场提高Fe:LiNbO3中90°记录体全息的衍射效率

针对90°全息记录结构的特殊性,在记录和读出阶段分别施加不同极性的外加电场,实现了Fe:LiNbO3晶体中高衍射效率的全息记录和读出.在库赫塔列夫(Kukhtarev)方程基础上引入两维耦合波理论,对组合外加电场提高掺铁铌酸锂晶体光折变特性的机理进行了探讨.实验和理论计算结果都表明这种分别在记录和读出过程施加不同极性组合的外加电场是在Fe:LiNbO3中实现高衍射效率90°记录结构体全息的有效技术方案.     

基于FlexPDE研究顺电相KTN晶体中大调制度全息光栅的形成

在用带输运模型研究光折变效应时,大多数情况下都限定入射的相干光调制度远小于1,对方程做线性化近似以便于求解,这在求解小调制度问题时可以达到满意的精度。但在很多实际情况下光调制度接近于1,此时线性理论不再适用。基于FlexPDE程序提出了一种新的求解方法,适用于大调制度时的情况。采用有限元算法,严格求解光折变带输运方程,研究了外加电场时顺电相KTN晶体中大调制度全息光栅的形成,给出了晶体中的空间电荷场、光激发电子、离化施主、晶体折射率等的分布情况和时间演化曲线。计算结果表明,采用FlexPDE程序不仅可以大大降低带输运模型的求解难度,而且能够实时动态显示全息光栅的形成过程,具有直观性。     

全息存储中的栅增强读出

基于波的耦合理论,给出了实际写入光折变晶体中光栅振幅的空间分布函数,通过数值解耦分析了单光束读栅和双面交替读栅时全息光栅的增强特性。提出了一种易于实现双面交替读栅增强衍射效率的存储结构,此结构中包括一个存储晶体和一个动态全息刷新器,给出了实现栅增强的最佳结构参数。     

LiNbO_3∶Ce∶Cu晶体中绿光非挥发全息记录优化

为了对在LiNbO3∶Ce∶Cu晶体中绿光作为记录光的非挥发全息记录进行优化,联立求解了双中心物质方程和双光束耦合波方程,数值分析了平均空间电荷场(SCF)和衍射效率随晶体的氧化还原态、记录光与敏化光的光强比以及深浅中心的掺杂浓度的变化。结果表明,采用绿光作为记录光在LiNbO3∶Ce∶Cu晶体中进行非挥发全息记录,可以记录得到强光折变光栅,其空间电荷场高达107V/m;获得高达80%以上的固定衍射效率,各相关参量都有较大的优化空间。     

LiNbO3:Ce:Cu晶体中绿光非挥发全息记录优化

为了对在LiNbO3:Ce:Cu晶体中绿光作为记录光的非挥发全息记录进行优化,联立求解了双中心物质方程和双光束耦合波方程,数值分析了平均空间电荷场(SCF)和衍射效率随晶体的氧化还原态、记录光与敏化光的光强比以及深浅中心的掺杂浓度的变化.结果表明,采用绿光作为记录光在LiNbO3:Ce:Cu晶体中进行非挥发全息记录,可以记录得到强光折变光栅,其空间电荷场高达107V/m;获得高达80%以上的固定衍射效率,各相关参量都有较大的优化空间.     

表面起伏对体积相位全息光栅衍射效率的影响

从理论上分析了重铬酸盐明胶经过全息曝光制作而成的体积相位全息光栅产生表面起伏时光栅介质层介电常数的变化。严格分析了体积相位全息光栅有表面起伏时所形成的既有折射率调制，又有浮雕调制的复合型光栅的衍射特性，并编制程序进行了计算。为了证明程序的正确性，还用所编制的程序计算了一种已知衍射效率光栅的衍射效率。并得到了满意的结果。进而分析了表面起伏、光栅介质层厚度、折射率调制度对体积相位全息光栅衍射效率的影响，并且对它们所产生的影响进行了比较，得出了在获得较大＋1级透射率的情况下，表面起伏、光栅介质层厚度、折射率调制度的误差容限，这对体积相位全息光栅的制作有一定的指导意义。     

斜入射下液晶偏振光栅衍射特性研究

为了表征光束倾斜入射下液晶偏振光栅的衍射特性，提出了液晶偏振光栅斜入射角度-驱动电压-衍射效率的三维模型建模方法。该方法利用吉布斯自由能方程，求解液晶分子指向矢，得到驱动电压与液晶分子倾斜角的表达式，推导出斜入射角度与相位延迟量之间的关系，结合扩展琼斯矩阵表征不同入射角度下液晶偏振光栅的透过率，通过矢量衍射理论，建立了斜入射角度-驱动电压-衍射效率的三维模型。该模型不仅可以定量求解不同斜入射角度下液晶偏振光栅衍射效率，而且能够实现衍射效率最优时驱动电压的标定。通过仿真分析和实验对该模型的有效性进行了验证，结果表明:光束入射角度从0°倾斜到10°时，最优驱动电压由2.2 V降低到2.0 V，液晶偏振光栅衍射效率从85%下降到78%；光束入射角度从0°倾斜到?10°时，最优驱动电压由2.2 V升高到2.4 V，液晶偏振光栅衍射效率从85%下降到74%。     

斜入射液晶空间光调制器的特性

用读出光斜入射到液晶空间光调制器(LC-SLM)的读出面,是一种有效的提高空间光调制器(SLM)读出效率的方法。测量了读出光以不同角度入射到液晶空间光调制器的读出面上时,相位调制深度与写入光强的关系、衍射效率与二值光栅对比度的关系。得到随着入射角度的增加,最大相位调制深度减小,而衍射效率变化并不明显。在45°时有最大相位调制深度2.0936π和35.4%的正一级衍射效率。     

非近轴光束下铌酸锂晶体的电光效应

为了研究电场一定时,光束在非近轴条件下铌酸锂晶体的电光效应,采用折射率椭球张量的循环坐标变换方法,理论上推导了光轴正交截面上折射率分布的解析式,讨论了折射率、相位延迟以及透射率与光束入射方向之间的关系,并且进行了实验验证,取得了透过率随光束与光轴夹角α的实验数据。结果表明,y方向加电场时,入射光小角度偏转将引起x方向感应折射率以及光束透射率的明显变化,而y方向的感应折射率不变;光束与光轴的夹角α对铌酸锂晶体电光性能的影响远远大于光矢在x-y平面与x轴正半轴的夹角β对其的影响;x方向加电场时感应折射率同y方向加电场时类似,但此时相位延迟更小,在0°~0.4399°夹角范围内,前者的透过率变化较后者慢,并且在0.45°之后呈现出交替变化的规律,当夹角为0.5°,0.680°等位置时,它们具有相同的透过率。这一结果对利用角度调节以改善铌酸锂晶体的电光性能具有一定的指导意义。     

Seismic array response in the presence of a dipping shallow layer

Seismic arrays are commonly used to enhance vertically traveling signals and attenuate horizontally traveling noise. However, variations within the array length can degrade the array response. This paper studies the effect of a dipping shallow layer across the array length on the array response, by modeling plane Ricker wavefronts incident on 12-element equally and triangularly weighted arrays. To analyze the dip effect, shallow layer dip angles of 0°, 15°, 30°, and 45° are used, while wavefront incidence angles of 90°, 70°, 45°, 20°, and 5° are used to analyze the effect of dip on various types of signals and noises incident on the array. In the presence of a dipping shallow layer, an array designed to attenuate a wave with a certain dominant frequency will actually attenuate a wave with a different frequency, so degrading the array performance. The effects of incidence and dip angles on the array response are opposite. The degradation in the array performance depends largely on the combination of incidence angle of the targeted signal and shallow layer dip angle. However, the degradation in the array response became more severe as the incidence angle decreased. Thus, vertically incident signals are more severely affected than horizontally incident noise (e.g., ground roll). A spatial filter to compensate for these effects is proposed, which requires knowledge of the incidence and dip angles. Since a dipping bottom boundary of the shallow layer cannot be inferred from the surface topography, it can affect the array response without being detected. Therefore, the dip of the shallow layer bottom should be estimated prior to array layout. Once the dip angle is known, a spatial filter can be designed to account for the effects of incidence and dip angles.     

Reflectance characteristics in the submillimeter and millimeter wavelength region of a vacuum compatible absorber

The reflectance characteristics of a grooved sample of Corning Macor, a glass ceramic, were studied in the range 60–1100 GHz for incident and reflected angles ranging from 10° to 65°. Measurements indicate a low, <1%, reflectance for near normal angles of incidence, where the angles of incidence and reflection are defined with respect to a direction normal to the sample face as if it were a planar surface. Higher values, up to 6%, were obtained for other angles of incidence and these results depend upon the orientation of the sample grooves with respect to the polarization of the electric field of the incoming radiation. Structure in the spectra indicates complex interference effects in some configurations.     

二维聚合物分散液晶光子晶体的制备与研究

为了改善现有聚合物分散液晶(PDLC)光子晶体(PC)的制备方法和电光特性,利用532nm激光干涉条纹引发聚合物和液晶的混合物相分离,采用全息两次不等时曝光的方法,即第1次曝光完成后,将样品沿基板中心法线旋转60°进行第2次曝光,制备得到电可调谐的二维三角格子的PDLC-PC。实验结果表明,两次曝光的时间对聚合物和液晶的相分离程度影响很大,用偏光显微镜观察优化条件下制备得的二维PDLC-PC发现,聚合物和液晶在二维空间上呈规则的三角格子周期性分布。用波长为633nm的He-Ne激光器探测得到在未施加电压时不同晶格常数的PDLC-PC的衍射图样,并根据一级衍射的电光变化曲线,可以看到,其衍射效率可以利用电场进行有效的调节。     

全息光栅的可擦除存储性能研究

本文制备了高衍射效率的全息光栅,并对其进行了图像的可擦除存储性能研究。选用五官能度的二季戊四醇羟基五丙烯酸酯、二官能度的邻苯二甲酸二甘醇二丙烯酸酯以及向列相液晶TEB30A作为存储材料,将其置于全息干涉场中记录图像;采用He-Ne激光器实现图像的再现,并通过对全息光栅施加电场来改变光栅内液晶分子的取向,降低光栅的折射率调制度,从而使图像消失;最终得到了衍射效率为85.6%的全息光栅,通过He-Ne激光器实现了图像的再现,并在外加电场为50V时使图像基本消失,实现了图像的可擦除存储功能。     

Study on the properties of the two-dimensional curved surface metamaterial

Metamaterials become a breakthrough technology due to their potential applications. We numerically investigate the properties of the two-dimensional curved surface metamaterial in the microwave regime. Unlike one-dimensional planar metamaterial, some novel properties are stimulated in the designed two-dimensional curved surface metamaterial. The reflected wave is transformed into its orthogonal polarization wave in addition to the absorbing components for normal linearly polarized electromagnetic wave incidence. The polarization conversion ratio and absorption are discussed detailly under different oblique incident conditions both in transverse electric wave and transverse magnetic wave. The reflections are stable for transverse magnetic wave while changing obviously for transverse electric wave when the incident angle changes from 0° to 60°. The tendency of reflections is almost consistent when the polarization angle changes from 0° to 45° under normal incidence. We also discuss the influences of the geometric parameters on the properties of the two-dimensional curved surface metamaterial. The designed two-dimensional curved surface metamaterial can be a very potential candidate for the radar scattering section reduction and electromagnetic stealth.     

Ellipsometric characterization and optical anisotropy of nanostructured CuIn3S5 and CuIn5S8 thin films

In the present work, we prepared CuIn₃S₅ and CuIn₅S₈ thin films by Glancing Angle Deposition technique (GLAD). In general, this technique promotes the formation of nanostructures, and in our particular case, it was possible to develop nanorods of these two materials by tilting the substrates with respect to the flux of incident material and heating the substrates with a halogen lamp. The nanorods are inclined in the direction of incident material flux which is no longer in the same direction with the normal to the substrates. (SEM) has led to an optical anisotropy. To ensure this optical anisotropy, we characterized the samples by ellipsometry, at 3 angles of incidence 50°, 60° and 70°. At each angle of incidence, three measurements were made at different azimuth angles 00°, 45° and 90°. These ellipsometric measurements allowed us to reach the right model to determine the refractive index, the thickness of films and the determination of the optical constants of the CuIn₃S₅ and CuIn₅S₈ samples, such as the dielectric constant.