共查询到17条相似文献,搜索用时 140 毫秒
1.
用CzHQZn作为受主,利用磷光敏化的方法制备了有机电致黄光和白光器件。黄光器件采用Ir(ppy)3掺杂4,4-N,N′-=咔唑基联苯(CBP),敏化新的黄光材料CzHQZn作为发光层,当发光层厚度为18nm时器件性能最好,最大发光效率为3.26cd/A(at10V),最大发光亮度为17560cd/m2(at10V);白光器件采用多发光层结构,结合ADN的蓝光复合发光,同时加入了电子阻挡层(NPBX)和空穴阻挡层(BCP),获得的白光器件最大发光效率为2.94cd/A(at8V),最大亮度为11089cd/m2(at13V)。 相似文献
2.
采用真空热蒸镀技术,制备了结构为ITO/NPBX(40nm)/rubrene(0.2 nm)/NPBX(5nm)/DPVBi(30nm)/TPBi:x%Ir(ppy)3(30nm)/LiF/Al的白光器件。利用Ir(ppy)3掺杂到电子传输层TPBi中,在掺杂层中提高了电子的迁移率,调整了空穴和电子的平衡,从而改善了白色有机电致发光器件的效率。当Ir(ppy)3的掺杂浓度为6%时,器件的电流效率最高,在驱动电压9 V时最大电流效率为10.66 cd/A,此时色坐标为(0.36,0.38);当电子传输层TPBi中不掺杂Ir(ppy)3时,白光器件的效率最低,在驱动电压10V时最大电流效率为1.69 cd/A,此时色坐标为(0.31,0.30)。掺杂浓度为6%的白光器件的电流效率是不掺杂白光器件的电流效率的6.3倍。 相似文献
3.
研究了一种新型发光材料(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinolato-Zinc的发光性能,利用它的空穴传输和发光特性制备了有机白光器件,器件的结构为:ITO/2T-NATA(15nm)/FHQZn(38nm)/NPB(25nm)/BCP(10nm)/Alq(30nm)/LiF(0.5nm)/Al,其中,(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinoato-Zinc(FHQZn)作为空穴传输层和黄橙色发射层,N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPBX)作为蓝光发射层。器件最大的电流效率为1.68cd/A(at7V),最大的亮度为4624cd/m2(at12V),此时色坐标为(0.28,0.25)。器件的色坐标由7V(66.83cd/m2)时的(0.27,0.29)到12V(4624cd/m2)时的(0.28,0.25)几乎不变,是一个基于新型材料的色度较稳定的有机白光器件。 相似文献
4.
基于TPAHQZn发光色度稳定的黄色OLED 总被引:2,自引:2,他引:0
采用一种既具有空穴传输特性又具有发光特性的新型荧光染料(E)-2-(4-(dipheny-lamino)styryl)quinolato-zinc (TPAHQZn)作为发光层,制备了结构为 ITO/ 4,4′,4″-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine (2T-NATA)(15 nm)/ (E)-2-(4-(diphenylamino)styryl)quinolato-zinc (TPAHQZn)(x nm)/9,10-bis(2-naphthyl)anthracene(ADN)(31 nm)/ tris(8-quinolinolato) aluminum(Alq3)((65-x) nm)/LiF(0.6 nm)/Al的黄色有机电致发光器件.研究了不同厚度的发光层对器件性能的影响.TPAHQZn厚度为30 nm 的器件在14 V电压下实现了黄光发射,最大发光亮度为 2 479 cd/m2,最大电流效率为0.84 cd/A,色坐标由8 V(6.346 cd/m2)时的(0.502,0.449 5)到14 V(2 479 cd/m2 )时的(0.497 9,0.453)变化不大,器件的发光颜色稳定. 相似文献
5.
通过引入电子阻挡层的高效率的有机磷光白光器件 总被引:2,自引:2,他引:0
以CBP作为母体材料,绿色磷光染料Ir(ppy)3作为敏化剂,以荧光染料rubrene作为受主,制备了结构为ITO/2T-NATA(25 nm)/ NPBX (25-d nm)/ CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(d nm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10 nm)/LiF(1 nm)/Al的白光器件.在器件中,敏化剂Ir(ppy)3、荧光染料rubrene的浓度分别为5.0 wt%和0.5 wt%,发光层的厚度选择8 nm,通过调整两层NPBX的厚度来改善器件的性能,得到了比较理想的白光发射.当d的厚度为10 nm 时,器件在7 V的电压下最大电流效率达到11.2 cd/A,在17 V的电压下其最大亮度达到28 170 cd/m2,色坐标为(0.37,0.42),处于白光区. 相似文献
6.
基于CzHQZn发光的白光有机电致发光器件 总被引:3,自引:2,他引:1
利用一种新材料(E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl)quinolato-Zinc(CzHQZn)作空穴传输层和发光层制备了白光有机电致发光器件(WOLED),器件的结构为indium-tin oxide(ITO)/4,4′,4′′-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine(2T-NATA)(22 nm)/CzHQZn(xnm)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPBX)(ynm)/2,9-dimethyl,-4,7-diaphenyl,1,10-phenanthroline(BCP)(10nm)/tris(8-quinolinolato)aluminum(Alq3)(68-x-ynm)/LiF(0.5 nm)/Al。研究发现发光层CzHQZn和NPBX的厚度对器件的发光性能有较大的影响。当CzHQZn厚度x为22 nm、NPBX厚度y为8 mm时,得到了色度最好和效率最大的WOLED,最大电流效率为0.9 cd/A(at ... 相似文献
7.
通过Ir(ppy)3的磷光敏化作用,制作了结构为:ITO/2T-NATA(20 nm)/NPBX(20 mm)/CPB∶x%Ir(ppy)3∶0.5%rubrene(8 nm)/NPBX(5 nm)/DPVBi(30 nm)/Alq(30 nm)/LiF(0.5 nm)/Al的有机白光器件.当Ir(ppy)3的掺杂浓度为6%时,器件的性能最好.在15 V的电压下最大亮度达到24 960 cd/m2,在电压为8 V的情况下,发光效率达到最大,为5.17 cd/A.该器件的色坐标在白光等能点附近,是色度较好的白光器件. 相似文献
8.
在空穴传输层(HTL)和发光层(EML)间插入4,4-N,N′-二咔唑基联苯(CBP)超薄层,制备了结构为ITO/NPB/CBP(xnm)/CBP:Ir(ppy)3/BCP/Alq3/LiF/Al有机电致磷光器件。与未插入CBP超薄层的器件相比,CBP超薄层的引入可以有效阻挡Ir(ppy)3的三线态能量通过Dexter能量转移到HTL的NPB中,减少无辐射能量损失,提高了器件发光效率。调整CBP薄层的厚度,当x为3nm时,器件的效率提高幅度最大,从x为0nm时的9.0cd/A提高到16.9cd/A。 相似文献
9.
介绍了结构为ITO/4,4',4"-tris{N,-(3-methylphenyl)-N-phenylamino}tripheny-lamine(m-MTDATA,40 nm)/N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine(NPB,5 nm)/4,4'-bis(2,2'diphenyl vinyl)-1,1'-biphenyl(DPVBi,x nm)/5,6,11,12,-tetraphenylnaphthacene(Rubrene,0.5 nm)/DPVBi(20 nm)/tris(8-hydroxyquinoline)aluminum(Alq,45-x nm)/LiF(0.5 nm)/Al的白光器件.采用了2个DPVBi层中间夹1个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光和Rubrene的黄光,从而使器件发出性能较好的白光.器件保持第2层DPVBi的厚度为20 nm,第1层的DPVBi的厚度按照5、8、11和14 nm的规律进行变化,相应改变Alq的厚度,使得这两者的总厚度为45 nm保持不变.当第1层DPVBi的厚度是8 nm、Alq的厚度是37 nm和其它层的厚度保持不变时,在13 V的电压下,器件的最大亮度为18 710 cd/m2,对应的效率为2.06 cd/A,色坐标为(0.29,0.30),属于白光发射. 相似文献
10.
介绍了结构为ITO/40 nm 4,4′,4″-tris[N,-(3-methylphenyl)-N-phenylamino]tripheny- lamine(m-MTDATA)/5 nm N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine(NPB)/x nm 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl(DPVBi)/y nm 6,11,12,- tetraphenylnaphthacene(Rubrene)/40 nm tris(8-hydroxyquinoline)aluminum(Alq)/0.5 nm LiF/Al的器件,其发光光谱的半峰宽在电压由2 V变为12 V时,由140 nm变为70 nm,器件发光的峰值波长由456 nm变为444nm的规律。半峰宽变窄是由于随着电压的升高,被Ru- brene俘获的电子获得了足够的能量,越过Rubrene层,在DPVBi中与注入的空穴形成激子而复合发光的概率的逐步增加所造成的。峰值波长蓝移是由于激子的形成区域随着电压的增加逐渐由DPVBi层移向NPB层造成的。器件峰值波长的这种变化对器件的色度改善有着很大的影响。 相似文献
11.
White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
12.
JIANG Wen-long DING Gui-ying WANG Jin WANG Jing WANG Li-zhong CHANG Xi HAN Qiang WANG Hong-mei ZHAO Xiao-hong 《光电子快报》2008,4(1):26-29
Highly efficient white phosphorescent organic light-emitting devices (WOLEDs) was fabricated using an electron/exciton blocker. The device structure is ITO/2T-NATA(25 nm)/NPBX(25-dnm)/CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(dnm)/ DPVBi(30 nm)/TPBi(20 nm)/Alq(10nm)/LiF(1nm)/A1, in which N,N ' -bis- (1-naphthyl)- N,N ' -dipheny1-1, 1 ' - biphenyl-4,4 i -diamine (NPBX) functions as a hole transport layer and electron/exciton blocker, 4,4,N,N ' dicarbazolebiphenyl (CBP) is host, 4,4' -bis(2,2 -diphenyl vinyl)-1,1 ' -biphenyl (DPVBi) is blue fluorescent dye, 5,6,11, 12,-tetraphenylnaphthacene (rubrene) is fluorescent dye, factris (2-phenylpyridine) iridium (Ir(ppy)3) is phosphorescent sensitizer and tris(8-hydroxyquinoline) aluminum (Alq3) is an electron transport layer. The WOLEDs have obtained white light emission by adjusting the thickness of NPBX, when the concentration of Ir(ppy)3 is 5-wt% and rubrene is 0.5-wt%, respectively, the thickness of the doped emissive layer is 8 nm, the WOLEDs show a maximum luminous efficiency is 11.2 cd/ A with d of 10 nm at 7 V and a maximum luminance of 28170 cd/m^2 at 17 V, the CIE coordinates is (0.37.0.42), which is in white region. 相似文献
13.
(t-bt)2Ir(acac)超薄层厚度对有机电致发光器件性能的影响 总被引:4,自引:4,他引:0
以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)[(tbt)2Ir(acac)]为超薄层,制备了结构为indium tin oxide(ITO)/N,N'-bis(naphthalen-1-yl)-N... 相似文献
14.
以CzHQZn为主体的有机发光器件的发光效率 总被引:1,自引:0,他引:1
采用真空热蒸镀技术,分别制备了结构为ITO/2T-NATA(25nm)/CzHQZn(10~25nm)/TPBi(35nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm)/CBP:6%Ir(ppy)3:x%CzHQZn(20nm)/Alq3(50nm)/LiF(0.5nm)/Al和ITO/2T-NATA(30nm)/CBP:6%Ir(ppy)3:10%CzHQZn(xnm)/Alq3((70-x)nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED)。器件中,CzHQZn既有空穴传输特性,又是黄光发射的主体。为了提高其发光效率,利用磷光敏化技术,研究了掺杂层中不同掺杂浓度和掺杂层不同厚度时器件的发光效率。结果表明,器件的效率随着掺杂发光层的厚度和掺杂浓度的变化而改变,当发光层的厚度为18nm时,CzHQZn掺杂浓度为10%的器件性能较好;在10V电压下,器件的最大电流效率达到3.26cd/A,色坐标为(0.4238,0.5064),最大亮度达到17560cd/m2。 相似文献
15.
制作了一种白色有机电致发光器件(WOLED)。将红光[Ir(piq)2(acac)]及绿光[Ir(ppy)3]磷光掺杂染料分别掺入到母体CBP中,在2种磷光发光层间插入蓝光材料DPVBi,引入电子传输能力强的BPhen作为电子注入层和空穴阻挡层,通过改变蓝光发光层的厚度,得到了高效率的WOLED,最大电流效率可达17.6cd/A,最大功率效率达13.7lm/W,最大亮度达27525cd/m2,当电压从4V变化到12V时,色坐标从(0.54,0.35)变化到(0.30,0.31),基本处于白光区。器件的特点在于DPVBi的存在阻挡了2种磷光材料间的能量转移,色度可以通过简单地调整DPVBi的厚度,避免使用稀有的蓝光磷光材料和与其相匹配的母体材料,同时又可以保持较高的发光效率。 相似文献
16.
Yanfang Lv Pengchao Zhou Na Wei Kuijuan Peng Jianning Yu Bin Wei Zixing Wang Chong Li 《Organic Electronics》2013,14(1):124-130
We have investigated the hole-transporting properties of three different Ir complexes doped 4,4′,4″-tri (N-carbazolyl) triphenylamine (TCTA) using a series of hole-only devices. The improvement of hole-transporting ability was depended on the species of Ir complexes and their doping concentrations. We attributed the improved performance to their strong electron-accepting abilities or hole-transfer capabilities. Yellow organic light-emitting diodes (OLEDs) based on bis(2-phenylbenzothiazolato)(acetylacetonate)iridium bt2Ir(acac) were fabricated by utilizing this method with optimized doping concentration. The best electroluminescent (EL) performance of maximum 83.6 lm/W was obtained for the yellowing-emitting OLED by doping of Firpic into TCTA hole transport layer, compared with the cases of doping of Ir(ppy)3 into TCTA and doping of Ir(bpiq)2acac into TCTA. Moreover, the turn-on voltage of device decreased to 2.2 V, which was corresponding to the optical band gap of the emitter. 相似文献
17.
Feng Wei Tao Zhang Xiaochen Liu Xiaoyue Li Nan Jiang Zhiwei Liu Zuqiang Bian Yongliang Zhao Zhenghong Lu Chunhui Huang 《Organic Electronics》2014,15(11):3292-3297
In CuI complex based organic light emitting diodes (OLEDs) a host matrix is traditionally thought to be required to achieve high efficiency. Herein, it is found that the device ITO/MoO3 (1 nm)/4,4′-N,N′-dicarbazole-biphenyl (CBP, 35 nm)/[Cu(μ-I)dppb]2 (dppb = 1,2-bis[diphenylphosphino]benzene, 20 nm)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi, 65 nm)/LiF (1 nm)/Al (100 nm) with a vacuum thermal evaporated nondoped CuI complex emissive layer (EML) showed external quantum efficiency and current efficiency of 8.0% and 24.3 cd/A at a brightness of 100 cd/m2, respectively, which are comparable to the maximum efficiencies reported in an optimized doped OLED with the same emitter, higher efficiency than the OLED with a [Cu(μ-I)dppb]2:CBP EML, and much higher efficiencies than the nondoped OLED with a bis(2-phenylpyridine)(acetylacetonate)iridium [Ir(ppy)2(acac)] EML. A series of reference films and single carrier devices were fabricated and studied to understand the difference between CuI and IrIII complex based nondoped OLEDs. 相似文献