一种铟钼金属镶嵌靶

本实用新型是一种用于反应直流磁控溅射法制备掺钼氧化铟（IMO）透明导电氧化物薄膜的铟钼金属镶嵌靶。它由在纯度为99．99％的纯金属铟圆靶上均匀对称镶嵌纯金属钼丝构成,具体结构是,铟靶上有直径为2．5～3．5mm的小孔,小孔内镶嵌钼丝。本实用新型的镶嵌靶在制备新型透明导电氧化物薄膜以及新型光电器件领域具有良好的实用性。     

AZO透明导电薄膜的性能和制备

AZO薄膜是一种应用广、发展快的高导电率、透光率的金属氧化物薄膜。文章基于国内外的发展情况,概述了AZO薄膜的光电性能、应用领域和不同的掺杂对AZO薄膜的性能影响。归纳了AZO薄膜的制备方法,着重介绍了磁控溅射沉积法制备AZO薄膜的几个工艺参数可能对AZO薄膜性能的影响。     

二维过渡金属碳化物/碳氮化物（MXene）的稳定性及改进方法

二维（2D）过渡金属碳化物/碳氮化物(Mxene)材料，因其良好的亲水性、导电性、柔韧性以及高赝电容等特性，在储能、海水淡化、催化、电磁干扰屏蔽、透明导电薄膜等领域有着巨大的应用潜力。然而，由于MXene材料中活性过渡金属、表面官能团以及结构缺陷的存在，使其在无保护的环境中（含有水、氧等）很容易被氧化，导致稳定性较差。MXene材料的氧化破坏了其片状结构，降低了其电导率，限制了其更广泛的应用。本文简要介绍了MXene的结构和合成方法；综述了MXene在不同条件下不稳定的机理，即表面官能团和周围介质发生氧化反应；并从储存条件、合成方法、气氛热处理、表面电性修饰、掺杂等方面讨论了提高MXene稳定性的方法。      

石墨烯银纳米线透明导电薄膜的制备进展

透明导电薄膜是触摸器件以及液晶显示器等的重要组成部分,制备透明导电薄膜的材料主要有金属氧化物、导电聚合物、碳材料、金属材料和复合材料等。其中,一维银纳米线和二维石墨烯材料制备透明导电薄膜具有光电性能优异、化学性能稳定和柔韧性好等特点,有望应用于柔性电子设备中。介绍了石墨烯银纳米线透明导电薄膜常用的制备方法:旋涂法、真空抽滤法、棒涂法、喷涂法、滴涂法等5种以及各种制备方法的优缺点;总结了石墨烯银纳米线复合薄膜的应用领域;展望了石墨烯银纳米线透明导电薄膜的发展前景。     

专利信息

专利名称: 透明导电薄膜用靶、透明导电薄膜及其制造方法、显示器用电极材料、有机电致发光元件和太阳能电池专利申请号: 03138519. 2　公开号: 1461819申请人: 日本住友金属矿山株式会社一种透明导电薄膜用靶,其具有氧化铟作为其主要组分并含有钨和 /或钼,其中通过使氧化铟粉末和氧化钨粉末和 /或氧化钼粉末成形, 然后加热并烧结该成形体, 使得溅射后的薄膜具有氧化铟作为主要组分, 并含有原子比 (W +Mo) /In为0 0040~0 0470的钨和 /或钼而获得所述透明导电薄膜用靶, 其中该透明导电薄膜具有优异的表面光滑度和 6×10-4Ω·cm或更低的…     

SOFC金属连接体材料的高温氧化和导电性能

以固体氧化物燃料电池(SOFC)金属连接体为研究对象,分析了SUS 430铁素体不锈钢和Haynes 230合金在阴极气氛(空气)中模拟SOFC的高温氧化行为.利用薄膜X射线衍射技术研究了合金氧化物的相组成及演化过程,通过扫描电镜观察分析了合金氧化物表面的微观形貌和厚度.结果表明,两种合金的表面均形成了多层氧化物,它们依次为基体/Cr2O3/MnCr2O4尖晶石相.两种氧化物相分别形成于不同的氧化动力学阶段.氧化动力学外推和氧化物面比电阻估算结果表明,两种合金的高温氧化和导电性能均可满足作为SOFC金属连接体的使用要求.     

溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响

研究了用微波ＥＣＲ等离子体反应溅射制备透明导电氧化锌薄膜靶压及铝的掺入对薄膜电阻率和透光率的影响。制香电阻率为１０＾－５Ω．ｍ数量级,可见光平均透光率大于８０％的透明导电ＺｎＯ：Ａｌ（ＡＺＯ）膜。     

透明导电薄膜用靶、透明导电薄膜及其制造方法、显示器用电极材料、有机电致发光元件和太阳能电池

一种透明导电薄膜用靶，其具有氧化铟作为其主要组分并含有钨和／或钼，其中通过使氧化铟粉末和氧化钨粉末和／或氧化钼粉末成形，然后加热并烧结该成形体，使得溅射后的薄膜具有氧化铟作为主要组分，并含有原子比(W Mo)／In为0．0040～0．0470的钨和／或钼而获得所述透明导电薄膜用靶，     

化学气相沉积法制备的锰氧化物薄膜的电色性质

用化学气相沉积法制备出电色锰氧化物薄膜，其原料是乙酸丙酮锰（Ⅲ），在高于２５０℃温度下于基体上获得透明的Ｍｎ３Ｏ４薄膜。该薄膜在０．３ＭＬｉＣｌＯ４碳酸丙烯溶液中氧化和还原时产生令人满意的光吸收变化。库仓法测定其显色系数是６．０３ｃｍ２·Ｃ（－１）。     

金属基复合材料热磨损过程中氧化物的研究现状及展望

综述了金属基复合材料热磨损过程中碎片颗粒的形成和运动模型，氧化物产生的条件及形成机理，分析了氧化物釉层形成的具体阶段及影响因素，并在介绍有关氧化物釉层研究现状的基础上，展望了未来金属基复合材料热磨损过程中有关氧化物研究的趋势。     

Tm-doped ZnO nanorods as a TCO for PV applications

In photovoltaic(PV) devices, a transparent conducting oxide(TCO) film is used as a transparent electrode which permits sun rays to reach to the photoactive semiconducting layers and also to collect the photogenerated electrons. Due to their electrical and optical properties zinc oxide(ZnO) based thin films and nanostructures are considered as an abundant and safer option for TCOs. In this study, undoped and thulium(Tm)-doped ZnO nanorods(NRs) were produced on glass substrates via spin coating and hydrothermal methods. The ZnO samples were described by X-ray diffractometry(XRD). Morphological features of the ZnO samples were investigated with scanning electron microscopy(SEM). It is observed that the all ZnO samples have nanorod shape. The average rods diameter is between 75 and 100 nm. Also,the rods length is found to be between 0.96 and 1.62 μm. Electrical properties of the ZnO samples were performed via four probe method. The conductivity increases with measurement temperature and Tm doping. Optical spectra of the ZnO samples were measured in UV-Vis range and the band gap(E_g) is found to be 3.35 eV.     

A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu

Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC).     

两步机械球磨法制备M/TiO2复合薄膜及光催化性能研究

采用两步机械球磨法制备了M/TiO₂（M = Al、Sn、Zn、Ti）双层复合薄膜,利用光学显微镜和X射线衍射仪分析了涂层的微观结构和相组成,测定了薄膜的光催化性能,研究了过渡层材质以及球磨时间对复合薄膜光催化性能的影响。研究表明,TiO₂粉体在球磨过程中的晶体结构未发生显著变化,保持了良好的光催化活性。金属过渡层Al、Sn以及Zn将显著削弱复合薄膜的光催化活性,Ti是复合薄膜的理想金属过渡层,制备的Ti/TiO₂复合薄膜具有优异的光催化性能。随着第二步球磨时间的延长,Ti/TiO₂复合薄膜的光催化性能逐渐降低,这是由于第二层薄膜表面TiO₂含量降低的原因所致。     

Ferroelectric Thin Films and Multilayer Structures Based on Them

A brief review is presented of the results of recent research into ferroelectric films and their multilayer structures. The main attention is paid to theoretical calculation of the physical properties that characterize ferroelectric materials (electric polarization, phase transition temperature, dielectric response) in thick and thin films and their multilayer structures. Within the phenomenological theory it is shown that the main reason for a decrease in film symmetry is internal mechanical stress connected with the mismatch in lattice constants, difference in thermal expansion coefficients of the substrate and film, and also growth imperfections. These stresses lead to a change (decrease or increase) in the para-ferroelectric transition temperature that is actually observed in thick films. In thin films, where it is necessary to consider polarization gradients, a ferroelectric transition develops whose temperature depends on film thickness (thickness induced phase transition). The polarization and dielectric permittivity of films and their multilayer structures are calculated. It is demonstrated that permittivity becomes infinitely great close to the thickness induced phase transition temperature. The theory fits well with the recently observed huge dielectric permittivity and its temperature dependence in a multilayer structure of thin films of PbTiO₃ and Pb_0.72La_0.28TiO₃.     

Magnetic and magnetostrictive properties of amorphous TbFe/FeAl multilayer thin film

Exchange coupling multilayer thin films, which combined giant magnetostriction and soft magnetic properties, were of growing interest for applications. The TbFe/FeAl multilayer thin films were prepared by dc magnetron sputtering onto glass substrates. The microstructure, magnetic, and magnetostrictive properties of TbFe/FeAl multilayer thin film was investigated at different annealing temperatures. The results indicated that the soft magnetic and magnetostrictive properties for TbFe/FeAl multilayer thin film compared with TbFe single layer film were obviously improved. In comparison with the intrinsic coercivity JHc of 59.2 kA/m for TbFe single layer film, the intrinsic coercivity JHc for TbFe/FeAl multilayer thin films rapidly dropped to 29.6 kA/m. After optimal annealing (350 ℃×60 min), magnetic properties of Hs=96 kA/m and JHc=16 kA/m were obtained, and magnetostrictive coefficient could reach to 574×10-6 under an external magnetic field of 400 kA·m-1 for the TbFe/FeAl multilayer thin film.     

Structure and Some Properties of Pb(Zr,Ti)O 3 Thin Films

The possibility of obtaining Pb(Zr,Ti)O₃ (PZT) films by oxidation of Pb ― Zr ― Ti layers was investigated. The films were obtained by vacuum evaporation on a polished SiO₂ or glassceramics at 300-800 K. The PZT films obtained at 500 K were amorphous. With a rise in the condensation temperature to 600 K, film crystallization occurred in the perovskite structure. The dielectric and optical properties of PZT films were investigated. For metal ― dielectric ― metal (MDM) structures based on PZT films with a thickness of 0.8 μm, the capacity was 2.60 μF, which corresponds to a value of the dielectric constant of about 74,880. The energy-gap width determined by the short-wave boundary of self-absorption was equal to 3.5 eV. The advantages of the proposed method for obtaining PZT films are low deposition temperatures and the possibility of performing all technology in one cycle, including modification of the composition and properties of the films by doping.     

FeCrVTa0.4W0.4高熵合金氮化物薄膜的微观结构与性能

实验利用单靶射频磁控溅射技术,在单晶硅基底上,制备了两个系列FeCrVTa_0.4W_0.4高熵合金氮化物薄膜,即FeCrVTa_0.4W_0.4氮化物成分梯度多层薄膜和(FeCrVTa_0.4W_0.4)N_x单层薄膜,其中,多层薄膜用于太阳光谱选择性吸收薄膜。通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)、纳米力学探针、原子力显微镜(AFM)、紫外?可见分光光度计、接触角测量仪和四探针测试台对FeCrVTa_0.4W_0.4高熵合金氮化物薄膜进行微观结构分析以及性能表征。结果表明:在不通入氮气时,薄膜为非晶结构,当氮气含量升高后,转变为面心立方固溶体结构;当表层氮气流量为15 mL·min?1时,FeCrVTa_0.4W_0.4氮化物多层薄膜及单层薄膜均具有最佳的力学性能,其中,多层薄膜的硬度为22.05 GPa,模量为287.4 GPa,单层薄膜的硬度为22.8 GPa,模量为280.7 GPa,随着表层氮气含量的继续增加,力学性能下降;FeCrVTa_0.4W_0.4氮化物成分梯度多层薄膜在300～800 nm波长范围内均具有太阳光谱选择吸收性,当氮化物薄膜层数较少时具有较好的疏水性;(FeCrVTa_0.4W_0.4)N_x单层薄膜随着氮气含量的增加,薄膜方块电阻增加。      

AZO透明导电膜电磁散射光电参数影响试验

采用常温镀膜技术在浮法玻璃表面沉积了不同方块电阻的氧化锌铝(Al-doped zinc oxide,AZO)透明导电膜,建立了透明导电膜的雷达散射截面(radar cross section,RCS)测试和研究方法;提出了基于雷达散射截面均值的相对反射率概念,结合方块电阻和可见光透过率综合分析了氧化锌铝透明导电膜的电磁散射特性.在微波暗室对不同方块电阻的氧化锌铝透明导电膜进行了测试,得到了10 GHz和15 GHz入射频率,水平(horizontal horizontal,HH)、垂直(vertical vertical,VV)极化的雷达散射截面曲线;从飞行器座舱隐身角度出发,研究了前向20°和60°角域雷达散射截面曲线分布特点,并分析了雷达散射截面均值影响特性;基于氧化锌铝透明导电膜雷达散射截面测试结果,研究了方块电阻对雷达散射截面相对反射率和可见光透过率的影响规律.研究表明,方块电阻较低时雷达散射截面曲线分布特性与对应金属相似,方块电阻增大时,前向两个角域内的RCS均值减小,隐身性能减弱,雷达散射截面相对反射率降低而可见光透过率增加,相对反射率降低速率大小与方块电阻相关,合适的方块电阻可同时满足隐身及采光需求.暗室测试结果表明,在满足座舱可见光透过率前提下,氧化锌铝透明导电膜方块电阻为18~45 Ω时,具有外形隐身作用,方块电阻18 Ω为最优,对应RCS相对反射率Re_m2和Re_dB分别为84%和0.73 dB.      

Behavior of oxide film at the interface between particles in sintered Al powders by pulse electric-current sintering

The microstructure of the bonding interfaces between particles in aluminum (Al) powder sintered specimens by the pulse electric-current sintering (PECS) process was observed, using conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). The behavior of oxide film at the interface between Al particles and its effect on properties of the sintered specimens were investigated. The results showed there were two kinds of bonding interfaces in the sintered specimens, namely, the direct metal/metal bonding and the metal/oxide film layer/metal bonding interface. By increasing the fraction of the direct metal/metal bonding interfaces, the tensile strength of the sintered specimens increased, and the electrical resistivity decreased. By increasing the loading pressure at higher sintering temperatures or increasing the sintering temperature under loading pressure, the breakdown of oxide film was promoted. The broken oxide film debris was dispersed in aluminum metal near the bonding interfaces between particles.     

Dy3+ activated LaVO4 films synthesized by precursors with different solution concentrations

Using different-solution-concentration precursors with citric acid as chelating agent and polyvinyl alcohol as dispersing media, Dy3+ activated LaVO4 films were deposited on indium tin oxide (ITO) substrates. The scanning electronic microscope (SEM) showed that the compact and crack-free LaVO4:Dy3+ film could be obtained at a suitable solution concentration. The deposited films could absorb the ultra-violet light below 400 nm and were transparent in the visible and infrared region as evidenced by the transmission spectra, and the photolumines-cence spectra exhibited the characteristic emissions of Dy3+ peaking at 484 (blue) and 576 (yellow) nm due to the transitions of 4F9/2→6H15/2 and 4F9/2→6H13/2, respectively. The potential application of LaVO4:Dy3+ film in the dye-sensitized solar cell (DSSC) was also discussed.