厚度对室温沉积ZnO:Al薄膜光电特性的影响

利用直流磁控溅射法, 在室温玻璃衬底上制备了具有良好附着性的多晶ZnO∶ Al(ZAO)薄膜. 比较了室温下获得的薄膜与衬底加热条件下所得薄膜的结晶程度, 研究了厚度对室温条件下制备的ZAO薄膜表面形貌、电学性能及紫外-可见-近红外光区透光性的影响. 结果表明, 室温条件下制备的ZAO薄膜也具有(002)面择优取向, 随着膜厚的增加薄膜晶粒化程度提高, 载流子浓度和迁移率增大, 电阻率下降, 薄膜在紫外光区的吸收边发生红移, 在可见光区的平均透过率降低, 在近红外光区的透过率随厚度的增加而减小. 厚度为1200 nm的ZAO薄膜具有最佳光电综合性能, 其电阻率为7.315×10~(-4) Ω·cm, 方块电阻为6.1 Ω/□, 可见光区平均透过率达到82%, 波长为550 nm处的透过率为87%.     

基于高炉料线的RCS测量及SAR成像验证

围绕高炉雷达料面监测系统成像需求,针对高炉雷达测量目标的雷达横截面积（radar cross section,RCS）展开应用研究,首次实现了微波暗室中高炉料线RCS的高精度自动化测量,为高炉雷达目标特性的深入研究奠定了硬件基础.基于比较法测得10 GHz处的焦炭、烧结矿颗粒的RCS典型值分布以及高炉料线散射方向性图,测量动态范围为-10~15 dB.通过RCS测量和成像诊断等方法对工业现场布焦、布矿的雷达回波信号强度差别大等问题进行了探索和分析.模拟工业现场的焦炭、烧结矿等平台加漏斗的料线形状,对散装物料进行了等比例缩小的实际摆放,对典型料线缩比模型进行了合成孔径雷达（synthetic aperture radar,SAR）成像验证,并深入分析了成像缺失和成像误差原因,得知漏斗部分在低频情况下成像效果不理想,需要提高测试频段;利用标准球模拟料线分析成像误差,方位向和距离向绝对误差在1.2%和5.8%以内,暗室内方位向测量误差不超过±0.01 m.      

ZnO缓冲层对W掺杂VO_2薄膜光电性能的影响

用磁控溅射法在载玻片基底上分别制备W-VO2单层薄膜与ZnO/W-VO2双层薄膜,并在Ar气氛中进行退火。用X射线衍射仪、LCR测试仪、扫描电镜、紫外-可见分光光度计和红外光谱仪对薄膜样品的晶体结构、电阻-温度特性、表面形貌、可见光透过率和红外光透过率进行测试。结果表明:ZnO/W-VO2双层薄膜的相变温度降低至35℃,薄膜生长更加致密均匀,可见光透过率提高约23%,对红外光的屏蔽效果更优。     

ZnO:Al(ZAO)透明导电薄膜国内的研究现状

综述了以氧化锌铝陶瓷靶为靶材制备透明导电ZAO薄膜的制备技术,系统地研究了各工艺参数,如氩气压强、射频功率、衬底基片温度、退火条件和氧流量等对其结构和光电特性的影响。在纯氩气中且衬底温度为300℃时制备的ZAO薄膜经热处理后电阻率可降至8.7×10-4Ω.cm,可见光透过率在85%以上。X射线衍射谱表明,ZAO晶粒具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长。     

大面积柔性基底TiO2/Ag/Ti/TiO2多层膜的制备及其光电和红外发射特性

利用磁控溅射在柔性基底上制备了大面积的TiO2/Ag/Ti/TiO2多层膜, 其中TiO2和Ag分别采用中频反应溅射和直流磁控溅射制备, 同时采用Ti作为过渡层, 有效地防止了在溅射最外层TiO2时对Ag膜连续性的破坏.利用紫外可见分光光度计, 四探针电阻仪, 扫描电子显微镜, 红外比辐射率测量仪对薄膜的表面形貌和光电特性进行了表征, 重点研究了不同膜层厚度对多层膜可见光透过率, 方块电阻和红外发射率的影响.结果表明, Ag层厚度对多层膜的方块电阻和红外发射率有决定性的影响, 而TiO2层厚度对此影响不大.     

不同生长温度对Ga掺杂ZnO透明导电薄膜性能的影响

采用磁控溅射方法在普通载玻片衬底上制备了Ga掺杂的ZnO(GZO)透明导电薄膜,并研究了不同生长温度对GZO透明导电薄膜的结构性能、电学性能及光学性能的影响.制备的GZO透明导电薄膜均沿(002)方向的择优取向生长,薄膜的表面形貌为蠕虫状,表明薄膜内存在较大的残余应力.随着生长温度的升高,GZO薄膜的电阻率先减小后增大,在生长温度为250℃时,薄膜的最低电阻率为1.91×10-3 Ωcm.不同生长温度下所制备的GZO薄膜在可见光波段的平均透过率均大于90％,薄膜具有优异的光学特性.     

射频磁控溅射法制备Ti掺杂ITO薄膜的厚度对膜结构与光电性能的影响

利用Ti掺杂ITO靶材,采用单靶磁控溅射法在玻璃基底上制备厚度为50~300 nm的ITO:Ti薄膜。借助X射线衍射(XRD)、原子力显微镜(AFM)、可见光分光光度计、霍尔测试系统和四探针电阻测量仪,研究薄膜厚度对薄膜的晶体结构、表面形貌和光电性能的影响。结果表明:ITO:Ti薄膜呈现(400)择优取向,随薄膜厚度增加,薄膜的结晶程度增强,晶粒度增大,薄膜更致密。随薄膜厚度增加,薄膜的均方根粗糙度和平均粗糙度以及电阻率都先减小再增加,薄膜厚度为250 nm时,表面粗糙度最小,蒋膜厚度为200 nm时,电阻率最低,为2.1×10-3?·cm。不同厚度的薄膜对可见光区的平均透过率都在89%以上。     

纳米VO2改性有机玻璃的隔热性能研究

通过将纳米二氧化钒粉体制备成纳米二氧化钒浆料添加到甲基丙烯酸甲酯的预聚体中,在低温和高温聚合的条件下得到具有红外智能隔热的有机玻璃。通过扫描电镜、光学性能以及隔热性能的测试对智能隔热有机玻璃进行表征,研究了纳米二氧化钒粉体形貌及纳米二氧化钒浆料的不同添加量对聚甲基丙烯酸甲酯的光学性能和红外隔热性能的影响。结果表明:用形貌为球形、粒径为50 nm的二氧化钒粉体制备得到的纳米二氧化钒浆料,且纳米二氧化钒浆料添加量为10%时,获得的纳米二氧化钒智能隔热有机玻璃性能相对最好,其可见光透过率为40%,红外阻隔率为85%,紫外阻隔率为99%。     

氧氮比对真空电弧沉积TiO_(2-x)N_x薄膜结构和性能的影响

采用真空电弧沉积技术在玻璃上制备了N掺杂TiO2复合薄膜。通过X射线电子能谱(XPS)、X射线衍射(XRD)、紫外可见光谱(UV-Vis)等测试技术研究了沉积过程中氧氮比对TiO2-xNx薄膜结构和性能的影响。实验结果表明,经500℃退火后的TiO2-xNx薄膜均为锐钛矿相,N原子在TiO2网络结构中以取代O原子的形式存在。TiO2-xNx复合薄膜在400～800 nm可见光区的透过率达60%,随着氮含量的增加,吸收边发生红移。在可见光下对酸性品红的降解表明TiO2-xNx薄膜具有可见光活性,随氧氮比的降低可见光催化活性逐渐增强。经自然光照射2 h,不同氧氮比制备的TiO2-xNx薄膜对大肠杆菌、金黄葡萄球菌的杀菌率均达99%以上。     

X射线荧光法快速测定锌铝硅合金中铝、硅、稀土含量

为建立快速分析方法,本文通过试验确立了仪器测定条件,并根据锌铝硅合金锭产品标准,首先研制梯度合理分布的系列标准样品,并在X射线荧光仪上拟合出铝、硅、稀土三元素的工作曲线,其相应曲线相关系数分别为0.997 7、0.999 8、0.993 8,从而建立起分析方法,对实际样品进行精密度测试,其相对标准偏差分别为0.65、3.83、5.26,采用化学分析方法比对,结果之间无显著性差异,应用于日常生产控制分析,可实现快速、准确分析,有效指导炉前生产。     

碳纳米管薄膜的制备及其性能的研究

采用喷涂和旋涂相结合的方法,在干燥洁净的石英基质上制备了均匀的碳纳米管薄膜．利用高分辨透射电子显微镜（JEM-2010F）对碳纳米管原料的形态进行了观察．利用紫外一可见分光光度计（UV-2550）和四探针电阻测试仪（RTS-8）分别测量了碳纳米管薄膜的透光率和电阻．考察了制备方法、加热温度、碳纳米管浓度和薄膜厚度等不同因素对薄膜透光率和电阻的影响．结果表明,选择适宜的参数可以制备出透明导电的碳纳米管薄膜,且具有良好的电学和光学特性：透光率和电阻分别可以达到83％和800Ω     

氧分压对直流磁控溅射铟锡氧化物(ITO)导电薄膜结构和性能的影响

通过直流磁控溅射热等静压铟锡氧化物(ITO)靶材制备ITO导电薄膜,并且针对O2-Ar混合气氛中氧的分压对ITO膜的结构、表面形貌、透光率以及导电率的影响进行了研究.结果表明,在低氧分压的条件下溅射,膜的(400)面非常显著地择优取向平行于玻璃表面,而随着氧分压的升高却表现为膜的(222)面择优取向平行于玻璃表面.同时,随着氧分压的升高,膜的表面粗糙度变小,膜的结构变得更细腻.膜的可见光透过率在氧分压增大的情形下有少许增大,但是膜的导电率却略有下降.     

Ultraviolet-shielding and conductive double functional films coated on glass substrates by sol-gel process

Ultraviolet-shielding and conductive double functional films were composed of CeO2-TiO2 film and SnO2:Sb film deposited on glass substrates using sol-gel process.Ce(NO3)3·6H2O and Ti(C4H9O4),SnCl4 and SbCl3 were used as precursors of the two different functional films respectively.The CeO2-TiO2 films were deposited on glass substrates by sol-gel dip coating method,and then the SnO2:Sb films with different thickness were deposited on the pre-coated CeO2-TiO2 thin film glass substrates,finally,the substrates coated with double functional films were annealed at different temperatures.The optical and electrical properties of the CeO2-TiO2 films and the double films were measured by UV-Vis spectrometer and four probe resistance measuring instrument.The crystal structures and surface morphology of the films were characterized using XRD and optical microscope,respectively.The obtained results show that the ultraviolet-shielding rate of the glass substrates with CeO2-TiO2 films is not less than 90%,and transmittance in visible lights can reach 65%.With the thickness of the SnO2:Sb film increasing,its conductivity became better,and the surface resistance is about 260 Ω/ when the SnO2:Sb films were deposited 11 cycles of the dip on the pre-coated CeO2-TiO2 glass.The ultraviolet-shielding rate of the glass substrates with double functional films is higher than 97%,and the peak transmittance in the visible lights is 72%.Additionally,with increasing the heat treatment time,the Na+ of the glass substrates diffuses into the films,resulting in the particle size of SnO2 crystal smaller.     

AZO透明导电薄膜的性能和制备

AZO薄膜是一种应用广、发展快的高导电率、透光率的金属氧化物薄膜。文章基于国内外的发展情况,概述了AZO薄膜的光电性能、应用领域和不同的掺杂对AZO薄膜的性能影响。归纳了AZO薄膜的制备方法,着重介绍了磁控溅射沉积法制备AZO薄膜的几个工艺参数可能对AZO薄膜性能的影响。     

采用磁控溅射法在细菌纤维素膜上制备高性能的铟锡氧化物薄膜

Microbial cellulose (MC) membranes produced by Acetobacter xylinum NUST4.1, were used as flexible substrates for the fabrication of transparent indium tin oxide (ITO) electrodes. Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency (RF) magnetron sputtering. The optimum ITO deposition conditions were achieved by examining crystalline structure, surface morphology and optoelectrical characteristics with X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV spectroscopy. The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated. The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content (O2/Ar, volume ratio) in the sputtering chamber. And the ITO crystalline structure directly determines the conductivity of ITO-deposited films. High conductive [sheet resistance～120Ω.square-1(Ω.sq-1)] and transparent (above 76%)ITO rilms(240 nm thick) were Obtained with a moderate sputtering power (about 60 W) and with an oxygen flow rate of 0.25ml·min-1(sccm) during the deposition. These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.     

Synthesis and characterization of Sb-doped SnO2-(CeO2-TiO2) composite thin films deposited on glass substrates for antistatic electricity and UV-shielding

Sb-doped SnO₂ (ATO)-(CeO₂-TiO₂) thin Films were deposited on glass substrates using the mixed solution including CeO₂-TiO₂ precursor and ATO particles by sol-gel dip coating process. ATO particles were prepared using low-temperature hydrothermal process. The mixed molar ratio of ATO to (CeO₂-TiO₂) vs the properties of CeO₂-TiO₂ thin film was investigated. The optical properties of the films were characterized by UV-visible transmission and infrared reflection spectra, the sheet resistance of ATO particles and films were measured by rubber sheeter (MYI-50) and four-point probe (HisuperGroup Inc, SDY-5), the surface morphology and structure of the films were analyzed using 3D Digitale Mikroskop and X-ray diffraction (XRD), respectively. The results showed that the ATO precursor solution lost weight completely at about 500 °C, and the ATO particles was obtained, which indicated the same rutile lattice structure as SnO₂. The glass substrates coated with ATO-(CeO₂-TiO₂) thin films showed better properties in antistatic electricity (10⁴-10⁶ Ω/?), shielding UV (almost 100%), visible light transmission (70%) and infrared reflection (>30%).     

Fabrication and properties of La modified AZO powders via a gaseous penetration processing

A new kind of AZO powders were synthesized by co-precipitation method with the doping content of Al was 3.0 wt%. Further modification of La to the powders was done via a gaseous penetration processing. Changes in constitution, structure, and electrical conductivity caused by doping and penetration were characterized. The doping of Al lowered the resistivity of AZO powders from over 1×10¹⁴ (ZnO made domestically) to 4.24×10⁷ Ω·cm. But more effective modification via gaseous penetration processing decreased the resistivity of La penetrated AZO powders to the lowest point of 2.45×10⁵ Ω·cm. The optimal penetration conditions coordinated by orthogonal test were that La³⁺ content of the penetration solvent was 2.0 wt.%, and that the penetration processing lasted for 5 h at the temperature of 480 °C. XRD analysis demonstrated that the doping process of Al only leaded to the changes of the peak width and intensity without new phases appearing. Yet, new phases appeared after the processing of gaseous penetration of La, which indicated that La enter the AZO powders thus complex reactions occurred to form the extra compounds. EDAX analysis, coupling with XRD, provided the evidence that La did exist in the penetrated AZO powders and the potential sign of the generation of extra compounds. Through SEM images, it was illustrated that the gaseous penetration processing progressed the growth of grain size in the shape of rod and generated distinguishable phases of extra compounds.     

Synthesis and characterization of Sb-doped SnO2-（CeO2-TiO2） composite thin films deposited on glass substrates for antistatic electricity and UV-shielding

Sb-doped SnO2(ATO)-(CeO2-TiO2) thin Films were deposited on glass substrates using the mixed solution including CeO2-TiO2 precursor and ATO particles by sol-gel dip coating process.ATO particles were prepared using low-temperature hydrothermal process.The mixed molar ratio of ATO to(CeO2-TiO2) vs the properties of CeO2-TiO2 thin film was investigated.The optical properties of the films were characterized by UV-visible transmission and infrared reflection spectra,the sheet resistance of ATO particles and films were measured by rubber sheeter(MYI-50) and four-point probe(HisuperGroup Inc,SDY-5),the surface morphology and structure of the films were analyzed using 3D Digitale Mikroskop and X-ray diffraction(XRD),respectively.The results showed that the ATO precursor solution lost weight completely at about 500 oC,and the ATO particles was obtained,which indicated the same rutile lattice structure as SnO2.The glass substrates coated with ATO-(CeO2-TiO2) thin films showed better properties in antistatic electricity(104-106 Ω/),shielding UV(almost 100%),visible light transmission(70%) and infrared reflection(>30%).     

纳米TiO2薄膜的制备及自清洁性能研究

通过溶胶一凝胶法在普通钠钙玻璃表面制备均匀透明的纳米TiO2自清洁薄膜。探讨了薄膜制备的工艺条件，并利用X射线衍射（XRD）、紫外分光光度计对薄膜的晶型、晶粒大小和透光率进行了表征，研究了在紫外光照射下薄膜的光催化性能及亲水性能。结果表明，制得的TiO2薄膜具有较强的自清洁性能。