Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.     

Reproducibility of transition temperature and critical current density of thin films of YBa2Cu3O7 on (100) LaAlO3

Submicrometer epitaxial films of YBa₂Cu₃O₇(YBCO) on (100) LaAlO₃ were made by coevaporation and furnace annealing. Samples from more than a dozen runs are used in this study. The zero resistance transition temperature (T _c) is high (89 or 90 K) if the film composition is phase pure (Ba/Y=2, Cu/Y=3) or if it is enriched in Ba and Cu. For these compositions the critical current density (J _c) at 77 K has an average value of 2×10⁵ A cm^–2, with a tendency for decreasingJ _c with increasing film thickness (0.2 to 0.8m). Variations inJ _c are not correlated with deviations from ideal stoichiometry. Steeper slopes of the resistance-temperature curves above 100 K and lower values of the room-temperature resistivity are associated with high values ofJ _c. If the film composition is enriched in Y relative to Ba and Cu,T _c decreases by several degrees.     

High Critical Current Density YBa2Cu3Ox Tapes Using the RABiTs Approach

Progress in the fabrication of epitaxial, high-J _c, biaxially aligned YBCO thick films on Rolling-assisted biaxially textured substrates (RABiTs) is reported. RABiT substrates comprise a biaxially textured metal substrate with epitaxial oxide buffer layers suitable for growth of superconductors. Oxide buffer layers have been deposited using three techniques: laser ablation, electron-beam evaporation, and sputtering. Epitaxial YBCO films grown using laser ablation on such substrates have critical current densities approaching 3 × 10⁶ A/cm² at 77 K in zero field and have field dependences similar to epitaxial films on single crystal ceramic substrates. Critical current densities in excess of 0.2 MA/cm² have been obtained on stronger, nonmagnetic substrates. In addition, samples with J _e of 12.5 kA/cm² at 77 K have been fabricated. The highest strain tolerence obtained so far is 0.7% in compression and 0.25% in tension. Deposited conductors made using this technique offer a potential route for the fabrication of long lengths of high-J _c wire capable of carrying high currents in high magnetic fields and at elevated temperatures.     

High-quality YBa2Cu3O7 films on 4-in. Wafers of sapphire,gallium arsenide,and silicon

Our technique of reactive thermal co-evaporation has been extended to fabricate large films (up to 4 in.) of YBa₂Cu₃O₇ with high quality. A rotating substrate holder is used to separate the deposition and oxidation processes. This allows free access of the metal vapors. As large substrate wafers we use Al₂O₃, Si, and GaAs with buffer layers of CeO₂, YSZ, and MgO, respectively. On all substrates, the uniformity of thickness and composition was better than 2%. Inductively measuredT _c andj _c (77 K) were 87.5±0.2 K and >1×10⁶ A/cm², respectively, across the full wafer area. This holds also for GaAs substrates due to a new procedure of capping by Si₃N₄.     

Transport properties of textured Bi2Sr2CaCu2O8+y, thin films

Superconducting films of the high-T _c compound Bi₂Sr₂CaCu₂O_8+y , have been grown on (111)-oriented gadolinium gallium garnet substrates by a liquid-phase technique. The films show a very high degree of preferential orientation with thec-axis perpendicular to the substrates. The onset of the resistive transition was 85 K while zero resistance was obtained at 78 K. Results concerning the critical current properties of the films are described. Measurements of the paraconductivity effects on the electrical resistivity above the superconducting transition due to thermodynamic fluctuations are also reported.Supported by Ansaldo S.p.A Divisione Ansaldo Ricerche, Via Corso Perrone 25, I-16100 Genova, Italy.     

Preparation and properties of Tl2Ba2CaCu2O8 thin films

Anex situ process has been developed to produce thin superconducting Tl₂Ba₂CaCu₂O₈ films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO₃, LaAlO₃, and Y-ZrO₂ substrates. A critical current density,J _c, of 2×10⁶ A/cm² at 77 K was measured on LaAlO₃. Film morphology was studied by SEM, AFM, and STM.     

Crystal Structure and Superconductivity of MgB2 Thin Films Grown on Various Oxide Substrates

The crystal structure and superconductivity of MgB₂ thin films grown on various oxide substrates were investigated by X-ray diffraction and resistance measurement. The films were prepared by a two-step method, in which precursors B films were annealed in Mg vapor at 900C. The X-ray diffraction shows that the MgB₂ films grown on C–AL₂O₃, R–AL₂O₃, and MgO (001) are c-axis oriented while the films grown on SrTiO₃ (001), LaAlO₃ (001), and ZrO₂ (001) are aligned with the (101) direction normal to the substrate planes. All the grown films show superconductivity and their transition temperature varies with the substrates in the range of 34–39 K. We think that the transition temperature variation is probably due to the lattice matching between the film and the substrate, as well as the interdiffusion at the film/substrate interface. The experimental results suggest that if there is no severe interdiffusion at the film/substrate interface in the high temperature annealing process, more substrates could be used for the growth of MgB₂ films using the two-step method.     

Effect of Ca Substitution on the Superconductivity of La2.5Y0.5CaBa3(Cu0.88Fe0.12)7Oz

The structural and superconducting properties of single-phase La_2.5–y Y_0.5Ca_1+y Ba₃ (Cu_0.88Fe_0.12)₇O _z (LYCaBCuFe) (y= 0.0–1.0) compounds with triple perovskite structure are investigated using X-ray diffraction, resistivity, a.c. susceptibility, and oxygen content measurements. Increasing Ca substitution for La resulted in a decrease in unit cell axes and volume. T _c ^R=0 shows a marginal increase from 31 K to 37 K for y = 0.0–0.21 and thereafter it decreases with increasing y leading to zero T _c ^R=0 at y 0.84. This shows that the suppression of T _c from 80 K to 31 K by Fe doping at x = 0.12 La_2.5Y_0.5CaBa₃(Cu_1–x Fe _x )₇O _z cannot be compensated by appropriate hole doping with Ca in LaYCaBCuFe.     

Critical current density and microstructure of YBa2Cu3O7 thin films post-annealed at a low oxygen partial pressure

Post-annealing of thin films of YBa₂Cu₃O₇ (YBCO) has been performed at 29 Pa and 750°C. For films 0.6 m thick, a critical current density >1 MA cm^–2 is obtained at 77 K, with a sharp eddy current response at 25 MHz. Microstructural investigation of these films by crosssectional and planar transmission electron microscopy reveals that the YBCO film has thec-axis normal to the plane of the substrate in a continuous sheet of varying thickness, frequently covering the entire thickness of the film. Mutually perpendicular rods with thec-axis in the plane of the LaAlO₃ substrate are also seen. The microstructure and critical current density of these films are compared with those of previously reported films post-annealed in atmosphericpressure oxygen.     

Direct Peritectic Growth of c-Axis Textured YBa2Cu3Ox on a Flexible Metallic Substrate

Previous work in the development of YBa₂Cu₃O _x (YBCO) superconducting wires and tapes has been focused on the deposition of YBCO on buffered metallic substrates. Although such an approach has proved successful in terms of achieving grain texturing and high transport current density, critical issues involving continuous processing of long-length conductors and stabilization of the superconductor have not yet been entirely settled. We have developed a novel process, the so-called direct peritectic growth (DPG), in which textured YBCO thick films have been successfully deposited directly onto a silver alloy substrate. No buffer layer is employed in the film deposition process. The textured YBCO grains have been obtained through peritectic solidification over a wide range of temperatures and times. The substrate materials have not demonstrated any observable reaction with the YBCO melt at the maximum processing temperature near 1010°C. The transport J _c has reached a respectable value of 10⁴ A/cm² at 77 K and zero magnetic field. Based on the experimental results in this work, we show that the DPG method offers an effective alternative for the fabrication of long-length YBCO conductors. Also reported is a physical explanation of the texturing mechanism on the metal substrate.     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Superconductivity and Ferromagnetism of the Ru-1232 Compounds in the (Ru1?xNbx)Sr2(GdCe1.8Sr0.2)Cu2Oz System

The Ru-1232 compounds have been synthesized in the (Ru_1–xNb _x )Sr₂(GdCe_1.8Sr_0.2)Cu₂O _z system, and effects of Nb substitution for Ru on superconductivity and ferromagnetism of the Ru-1232 compounds have been investigated. First, X-ray powder diffraction study shows that nearly the single 1232 phase samples can be obtained in the x composition range from 0.0 to 0.3. Then, from the electrical resistivity study, it is found that each of the samples shows resistivity dropping phenomenon at two temperatures of T _c ^l and T _c ^h, which originates from superconductivity of the Ru-1232 phase and the Ru-1222 one, respectively. Both of the starting temperatures are lowering with increasing Nb content x. Lastly, from the magnetic susceptibility study, it is found that superconducting transition temperature T _c is 20 K for the Ru-1232 sample with x = 0.0 and the ferromagnetic transition temperature T _m is about 90 K. This study also shows that both of the values of T _c and T _m become low with increasing x from 0.0 to 0.3.     

Current progress in ternary LREBa2Cu3Oy materials and their application

The J_c and H_irr values at 77 K of ternary light-rare-earth compounds, LREBa₂Cu₃O_y “LRE-123”, are usually high enough to serve in various applications. Several sources of vortex pinning can be in these composites tailored to fit the needs of the particular application. The list comprises LRE/Ba solid solution, oxygen vacancies, large particles of secondary phases, twin planes, nanoscale lamellas, etc. By means of the latter defects one can achieve a very high irreversibility field. Refinement of secondary phase particles and the optimal choice of their amount enhance the electromagnetic performance in a broad temperature range, up vicinity of T_c, allowing levitation at liquid oxygen, 90.2 K. An optimum content of MoO₃ doubles the self-field super-current at 77 K, H||c-axis. Altogether, the pinning tailoring in ternary LRE-123 materials provides a flexible and reliable way to fit the electromagnetic performance with the needs of sophisticated high-temperature and high-magnetic-field applications.     

Vortex motion in coupled DyBa2Cu3O7/(Y0.6Pr0.4)Ba2Cu3O7 heterostructures

Multilayer structures containing 24 Å thick DyBa₂Cu₃O₇ layers, separated by 96 Å of an (Y_0.6Pr_0.4)Ba₂Cu₃O₇ alloy, are studied to investigate the effect of coupling on vortex dynamics. With the magnetic field perpendicular to theab plane, and as a function of the number of superconducting layers in the structure, we find that the activation energy for flux motion increases, first linearly, and then saturates. This linear increase is taken as evidence that pancake vortices belonging to different DyBa₂Cu₃O₇ layers are stacked and have a coupled motion. Above a characteristic number of superconducting layers,N _c , shear of the vortex structures becomes important and the thermally activated process only displaces a stack ofN _c pancake vortices, meaning that the vortex lattice is turning three dimensional. In these structures we findN _c to be 2 to 3.     

Preparation of epitaxial YBa2Cu3O7−x films by magnetron sputtering

Thin films of highT _c superconductor YBa₂Cu₃O_7−x were obtained by magnetron sputtering. MgO, YSZ, YSH and Al₂O₃ single crystals were used as substrates. Epitaxial films with tetragonal structure havingT _c 55–60 K grow at substrate temperaturesT _s between 930 K and 980 K. Orientation of the films in thisT _s range was (100) and (001) for (100) MgO substrate, (111) and (001) for (1012) Al₂O₃ and (111) YSH and (113) or (103) on (110) YSZ and (111) YSH. Single crystalline films with orthorhombic structure and (001) orientation were grown on all the substrates whenT _s exceeded 980 K. They haveT _c>80 K.     

Preparation of SrAl2O4: Eu, Dy nanometer phosphors by detonation method

SrAl₂O₄: Eu²⁺, Dy³⁺ nanometer phosphors were synthesized by detonation method. The particle morphology and optical properties of detonation soot that was heated at different temperatures (600–1100 °C) had been studied systematically by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results indicated SrAl₂O₄: Eu²⁺, Dy³⁺ nanometer powders in monoclinic system (a = 8.442, b = 8.822, c = 5.160, β = 93.415) can be synthesized by detonation method, when detonation soot was heated at 600–800 °C. The particle size of SrAl₂O₄: Eu²⁺, Dy³⁺ is 35 ± 15 nm. Compared with the solid-state reaction and sol-gel method, synthesis temperature of the detonation method is lower about 500 and 200 °C respectively. After being excited under UN lights, detonation soot and that heated at 600–1100 °C can emit a green light.     

Film thickness dependence of critical current density for YBa2Cu3O7 films post-annealed at a low oxygen partial pressure

The variation of critical current density at 77 K as a function of film thickness was studied for YBa₂Cu₃O₇ films on (100) LaAlO₃ substrates. Film thicknesses were in the range 0.2–1.6m. The films were deposited by co-evaporation and post-annealed under conditions which have previously resulted in high-quality films (750°C and an oxygen partial pressure of 29 Pa). The critical current density at 77 K exceeds 1 MA cm^–2 for the thinner films, and decreases with increasing film thickness in excess of about 0.4m. The decrease is in rough agreement with a switch fromc-axis toa-axis growth at about this critical thickness. A good anticorrelation was found between room temperature resistivity and critical current density at 77 K. The results are compared to those obtained before by post-annealing at 850°C in 1 atm of oxygen.     

The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-Tc Films

The in situ process—laser ablation in combination with thermal evaporation of Tl₂O—has turned out to be a preparation method for single-phase and epitaxial TlBa₂Ca₂Cu₃O₉ (1223) thin films with T _c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T _c values up to 114 K, higher j _c values up to 6 × 10⁵ A/cm² (77 K, 0 T), and lower surface resistances of 56 m (77 K, 87 GHz) than the undoped films.     

Superconducting transition temperatures in the Ru-1232 system, RuSr2(Gd1? x Ln x Ce1.8Sr0.2)Cu2O z (Ln = Sm, Dy, and Ho)

We have investigated effects of the lanthanide element Ln and the composition changes on the superconducting transition temperatureT _c in the Ru-1232 system, RuSr₂(Gd_1−x Ln _x Ce_1.8Sr_0.2)Cu₂O _z (Ln = Sm, Dy, and Ho). At first, in the case of the samples with Ln = Sm among almost the single 1232 phase samples, the values of the superconducting onset temperatureT _co are almost the same forx=0.00−0.15, and each of the lattice parametersa andc is almost constant. While, in each of the cases of the samples with Ln = Dy and Ho, the sample withx=0.05 shows the maximum values for both the superconducting onset temperatureT _co and the zero resistivity temperatureT _cz. Especially for the sample with Ln = Dy, the values ofT _co andT _cz are 18.5 and 6.5 K, respectively. These are higher than those of the mother sample of RuSr₂(GdCe_1.8Sr_0.2)Cu₂O _z . Moreover, from variations ofT _co, lattice parameters ofa andc in the RuSr₂(Gd_1−x Dy _x Ce_1.8Sr_0.2)Cu₂O _z system as a function of Dy contentx, the relationship between the superconducting transition temperature and the lattice parameters in the present system are investigated.     

Growth and structure characterization of epitaxial Bi2Sr2Co2Oy thermoelectric thin films on LaAlO3 (001)

Epitaxial Bi₂Sr₂Co₂O_y thin films with excellent c-axis and ab-plane alignments have been grown on (001) LaAlO₃ substrates by chemical solution deposition using metal acetates as starting materials. Microstructure studies show that the resulting Bi₂Sr₂Co₂O_y films have a well-ordered layer structure with a flat and clear interface with the substrate. Scanning electron microscopy of the films reveals a step-terrace surface structure without any microcracks and pores. At room temperature, the epitaxial Bi₂Sr₂Co₂O_y films exhibit a resistivity of about 2 mΩ cm and a seebeck coefficient of about 115 μV/K comparable to those of single crystals.