两阶段平移、旋转图像高精度配准算法

图像配准在图像处理中是十分重要的,通常是许多现代图像处理和计算机视觉任务一个关键的预处理步骤,许多算法和技术已经被提出用来解决配准问题.本文提出一种稳健的两阶段层次配准算法,在频域组合相位相关和谱对消技术对平移和旋转图像获得亚像素精度的配准.算法第一阶段首先利用一维FFT技术实现图像的旋转以确定旋转角度,并利用这个旋转角度将两幅图像之间的运动简化为平移运动,然后利用相位相关法确定整数像素平移参数.算法第二阶段运用谱对消技术确定亚像素平移参数.提出的算法甚至在图像因为下采样而包含混淆误差情况下仍然能够获得亚像素精度配准.     

基于相位相关和模板匹配的亚像素图像配准参数估计

针对图像配准中的亚像素参数估计问题,提出了一种相位相关和模板匹配相结合的方法。该方法先采用相位相关法进行粗配准,找到整像素平移;然后运用模板(窗口)匹配和基于最小二乘的曲面拟合法实现亚像素图像配准参数估计。通过实验表明该方法可以充分利用FFT的高效运算,达到亚像素精度。     

基于SURF和矩阵乘法的超大规模遥感图像亚像素配准算法研究

图像配准是一项基本而又非常关键的图像预处理技术。在很多应用领域,要求配准精度达到亚像素级。现有的相位相关法具有精度高、计算简单等特点,但是随着图像规模的增大,计算付出的时间代价是巨大的。本文提出基于SURF和矩阵乘法相位相关法的超大规模遥感图像亚像素配准算法,采用化整为零的方法,首先把整幅图像划分成不同区域,其次使用改进的Canny算法进行边缘分割,去除无用信息,再次使用SURF算法提取特征,最后在关键点周围使用矩阵乘法相位相关估计图像亚像素偏移量。实验表明本文提出的算法不仅提高了算法运行速度,同时也解决了图像尺寸太大导致一般计算机无法处理的问题。并且由于矩阵乘法相位相关的良好抗噪声特性,因此即使存在噪声,算法仍然可以获得较高的亚像素偏移量估计精度。     

基于改进Hough变换的印刷电路板定位配准

电路板自动光学检测中常通过检测电路板的边缘直线来确定其旋转角度和平移量从而完成定位配准,存在运算量大、精度不高的问题.对传统Hough变换检测直线方法进行改进,从图像金字塔、约束投票角度、约束搜索点的区域3个方面提高Hough变换的效率,并利用最小二乘拟合法提高检测精度.定位配准时,先运用改进的Hough变换求取电路板边缘直线的近似参数;然后在原图上对边缘直线进行拟合求取电路板的精确旋转角度和平移量,完成定位配准.实验表明本文方法能准确完成电路板的定位配准,对大小为1 920×1 080像素的电路板图像,定位时间约为60 ms,定位误差小于1个像素.     

MEMS测量中一种新型的亚像素定位技术

亚像素定位技术是实现基于视觉的高精度MEMS测量的关键。文章提出了一种混合非线性优化和离散傅里叶变换的亚像素定位方法。首先通过相位相关法估计出像素级平移参数,然后利用互功率谱的整体信息,在其邻域范围内进行上采样矩阵傅里叶变换,精确定位相位互相关谱的峰值,测得亚像素级平移参数,最后实现了图像的高精度匹配。实验表明,该算法的定位精度优于扩展的相位相关法,像素定位精度能达到0.01像素,能够满足MEMS运动图像的高精度定位,且具有更好的噪声抑制能力和计算复杂度较低的特点。     

流场可视化中的运动矢量估计方法

本文提出了一种新的运动矢量估计的方法,其基本思想是先对流体图象进行了处理,再采用贯相似性检测算法快速得到像素精度的位移量,最后再在像素范围内使用相位拟合算法快速且方便地估计出亚像素的位移精度。虽然本方法是基于流体运动分析的数字粒子图像测速,但基本原理可广泛地用于一般的运动矢量估计。     

基于核回归正则项的图像超分辨率重建

讨论了图像成像的基本模型,并提出了一种基于调整核回归函数作为正则项的序列图像重建算法。该算法是对已经提出的核回归算法的改进,减少其在超分辨率图像重建时的运算量。而且在图像配准过程中针对图像间只存在平移和旋转变换,采用了基于矩形像素值的亚像素配准方法,以提高配准的速度和精度。利用此算法对序列图像进行重建仿真,并通过结论得出其在噪声严重的情况下具有更好的边缘保留特性。     

基于相位相关模板匹配的全景图像拼接

本系统对图像拼接的两个主要过程：图像配准和图像融合分别进行了详细介绍。图像配准是图像拼接的核心技术,并针对图像拼接中的图像配准参数估计问题,提出了一种扩展相位相关法与优化相结合的参数估计方法。基于相位相关模板匹配采用相位相关法估计出相互间存在旋转和平移的两幅部分重叠的图像的初始变换参数,然后对参数进行优化而得到最终准确...     

一种快速的亚像素图像配准算法

图像超分辨率重建是在现有红外探测器基础上提升空间分辨率的一种有效方法。超分辨率图像重建是利用一组相互之间存在亚像素位移的低分辨率图像构造出一幅高分辨率的图像,快速、高精度估计图像间的位移是其关键技术之一。提出了一种用于超分辨率重建的亚像素配准算法,算法由特征检测、像素级配准和亚像素级配准三个处理过程组成。在特征检测过程,首先采用梯度算子对图像进行边缘检测,然后对边缘点进行角点预检测,排除非角点像素点,之后再进行Harris角点检测,大大减少了计算量;在像素级配准过程,用NCC算法进行像素级配准,用统计方法去除误匹配点对;在亚像素级配准过程,先对像素级匹配点的邻域进行插值放大,再进行亚像素匹配,误匹配点剔除,相对偏移量计算。对提出的算法进行了仿真实验,结果显示本算法的速度较类似算法速度有较大的提高。     

InSAR自适应图像配准的干涉相位估计方法

提出了一种基于联合单像素模型的InSAR(Interferometric Synthetic Aperture Radar)干涉相位估计方法.能够根据配准误差的大小和方向来构造最优加权观测矢量,同时利用相邻像素的信息,因此具有自适应图像配准和降低相位噪声功能,因而可以在SAR图像配准精度很差(可以允许达到一个分辨单元)的条件下准确地估计相应像素间的干涉相位.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.