Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnO_x or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq^‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.     

Spray‐Coated Silver Nanowires as Top Electrode Layer in Semitransparent P3HT:PCBM‐Based Organic Solar Cell Devices

Silver nanowire (Ag NW) thin films are investigated as top electrodes in semitransparent inverted organic solar cells. The performance of semitransparent poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PCBM) organic solar cells with Ag NW top electrode layers is found to match very closely the performance of reference devices based on thermally evaporated, highly reflective metal silver top electrodes. The optical losses of the semitransparent electrodes are investigated in detail and analyzed in terms of transmission, scattering, and reflection losses. The impact on an external back reflector is shown to increase the light harvesting efficiency of optically thin devices. Further analysis of transparent devices under illumination from the indium tin oxide (ITO) backside and through the Ag NW front electrode open the possibility to gain deep insight into the vertical microstructure related devices performance. Overall, Ag NW top electrodes are established as a serious alternative to TCO based electrodes. Semitransparent devices with efficiencies of over η = 2.0% are realized.     

Flash‐Assisted Processing of Highly Conductive Zinc Oxide Electrodes from Water

Fabricating high‐quality transparent conductors using inexpensive and industrially viable techniques is a major challenge toward developing low cost optoelectronic devices such as solar cells, light emitting diodes, and touch panel displays. In this work, highly transparent and conductive ZnO thin films are prepared from a low‐temperature, aqueous deposition method through the careful control of the reaction chemistry. A robotic synthetic platform is used to explore the wide parameter space of a chemical bath system that uses only cheap and earth abundant chemicals for thin film deposition. As‐deposited films are found to be highly resistive, however, through exposure to several millisecond pulses of high‐intensity, broadband light, intrinsically doped ZnO films with sheet resistances as low as 40 Ω □^?1 can be readily prepared. Such values are comparable with state‐of‐the‐art‐doped transparent conducting oxides. The mild processing conditions (<150 °C) of the ZnO electrodes also enable their deposition on temperature sensitive substrates such as PET, paving the way for their use in various flexible optoelectronic devices. Proof‐of‐concept light emitting devices employing ZnO as a transparent electrode are presented.     

Cover Picture: Formation of Metal Nano‐ and Micropatterns on Self‐Assembled Monolayers by Pulsed Laser Deposition Through Nanostencils and Electroless Deposition (Adv. Funct. Mater. 10/2006)

The cover illustrates two‐step fabrication of metal micro‐ and nanostructures on self‐assembled monolayers (SAMs) by pulsed laser deposition and electroless deposition. Metal–SAM–metal junctions are a key component of molecular electronic devices. Pt was deposited in a micropattern by pulsed laser deposition through a stencil. XPS maps show how the Pt pattern is developed into a Cu pattern using electroless deposition as reported by Ravoo, Brugger, Reinhoudt, Blank, and co‐workers on p. 1337. The Cu pattern can also be observed by optical microscopy (background). Patterns of noble‐metal structures on top of self‐assembled monolayers (SAMs) on Au and SiO₂ substrates have been prepared following two approaches. The first approach consists of pulsed laser deposition (PLD) of Pt, Pd, Au, or Cu through nano‐ and microstencils. In the second approach, noble‐metal cluster patterns deposited through nano‐ and microstencils are used as catalysts for selective electroless deposition (ELD) of Cu. Cu structures are grown on SAMs on both Au and SiO₂ substrates and are subsequently analyzed using X‐ray photoelectron spectroscopy element mapping, atomic force microscopy, and optical microscopy. The combination of PLD through stencils on SAMs followed by ELD is a new method for the creation of (sub)‐micrometer‐sized metal structures on top of SAMs. This method minimizes the gas‐phase deposition step, which is often responsible for damage to, or electrical shorts through, the SAM.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.     

High rate (~7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se2 thin‐film solar cells with efficiency beyond 15%

Undoped zinc oxide (ZnO) films have been grown on a moving glass substrate by plasma‐enhanced chemical vapor deposition at atmospheric pressure. High deposition rates of ~7 nm/s are achieved at low temperature (200 °C) for a substrate speed from 20 to 60 mm/min. ZnO films are highly transparent in the visible range (90%). By a short (~minute) post‐deposition exposure to near‐ultraviolet light, a very low resistivity value of 1.6·10⁻³ Ω cm for undoped ZnO is achieved, which is independent on the film thickness in the range from 180 to 1200 nm. The photo‐enhanced conductivity is stable in time at room temperature when ZnO is coated by an Al₂O₃ barrier film, deposited by the industrially scalable spatial atomic layer deposition technique. ZnO and Al₂O₃ films have been used as front electrode and barrier, respectively, in Cu(In,Ga)Se2 (CIGS) solar cells. An average efficiency of 15.4 ± 0.2% (15 cells) is obtained that is similar to the efficiency of CIGS reference cells in which sputtered ZnO:Al is used as electrode. Copyright © 2013 John Wiley & Sons, Ltd.     

Transparent Ultrathin Oxygen‐Doped Silver Electrodes for Flexible Organic Solar Cells

An effective method for depositing highly transparent and conductive ultrathin silver (Ag) electrodes using minimal oxidation is reported. The minimal oxidation of Ag layers significantly improves the intrinsic optical and structural properties of Ag without any degradation of its electrical conductivity. Oxygen‐doped Ag (AgO_x) layers of thicknesses as low as 6 nm exhibit completely 2D and continuous morphologies on ZnO films, smaller optical reflections and absorbances, and smaller sheet resistances compared with those of discontinuous and granular‐type Ag layers of the same thickness. A ZnO/AgO_x/ZnO (ZAOZ) electrode using an AgO_x (O/Ag = 3.4 at%) layer deposited on polyethylene terephthalate substrates at room temperature shows an average transmittance of 91%, with a maximum transmittance of 95%, over spectral range 400?1000 nm and a sheet resistance of 20 Ω sq^?1. The average transmittance value is increased by about 18% on replacing a conventional ZnO/Ag/ZnO (ZAZ) electrode with the ZAOZ electrode. The ZAOZ electrode is a promising bottom transparent conducting electrode for highly flexible inverted organic solar cells (IOSCs), and it achieves a power conversion efficiency (PCE) of 6.34%, whereas an IOSC using the ZAZ electrode exhibits a much lower PCE of 5.65%.     

脉冲激光沉积工艺

脉冲激光沉积是一种新型沉积工艺，跟其它沉积工艺相比它具有许多的优点，这是因为在沉积过程中其靶材料的相对原子浓度可保持不变，从而可制备出理想配比的沉积薄膜。本文介绍了采用这种脉冲激光沉积工艺制备而成的新型ＺｎＯ：Ｇａ透明导电薄膜，以及Ｚｎ－Ｇａ２Ｏ４和Ｙ３Ａｌ５Ｏ１２：Ｔｂ荧光薄膜。     

Optical and electrical properties of epitaxial (Mg,Cd)xZn1−xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition

A consistent set of epitaxial, n-type conducting ZnO thin films, nominally undoped, doped with Ga or Al, or alloyed with Mg or Cd, was grown by pulsed laser deposition (PLD) on single-crystalline c-plane sapphire (0 0 0 1) substrates, and characterized by Hall measurement, and UV/VIS optical transmission spectroscopy.The optical band gap of undoped ZnO films at nearly 3.28 eV was shifted by alloying with Mg up to 4.5 eV and by alloying with Cd down to 3.18 eV, dependent on the alloy composition. In addition, highly doped ZnO:Al films show a blue-shifted optical absorption edge due to filling of electronic states in the conduction band.The Hall transport data of the PLD (Mg,Zn,Cd)O:(Ga,Al) thin films span a carrier concentration range of six orders of magnitude from 3 × 10¹⁴ to 3 × 10²⁰ cm⁻³, which corresponds to a resistivity from 5 × 10⁻⁴ to 3 × 10³ Ω cm. Structurally optimized, nominally undoped ZnO films grown with ZnO nucleation and top layer reached an electron mobility of 155 cm²/V s (300 K), which is among the largest values reported for heteroepitaxial ZnO thin films so far.Finally, we succeeded in combining the low resistivity of ZnO:Ga and the band gap shift of MgZnO in MgZnO:Ga thin films. This results demonstrate the unique tunability of the optical and electrical properties of the ZnO-based wide-band gap material for future electronic devices.     

Unusually High Optical Transmission in Ca:Ag Blend Films: High‐Performance Top Electrodes for Efficient Organic Solar Cells

Highly transparent electrodes are demonstrated based on thermally evaporated calcium:silver blend thin–films, which show unusually high transmission well above the expectations from bulk material properties and thin film optics. These electrodes exhibit a low sheet resistance of 27.3 Ω/, combined with an extraordinarily high mean transmittance of 93.0% in the visible spectral range (σ_dc/σ_opt = 186.7), superior to the commonly used inorganic electrodes made from indium tin oxide (ITO). Additionally, the metal blend electrode is flexible, showing a constant sheet resistance down to a bending radius of 10 mm and can be employed on top of organic devices without causing damage to the organic material. The spontaneously formed unique microstructure of a polycrystalline Ag network with randomly distributed nanoapertures, surrounded by a calcium shell, enables broadband transmittance enhancement due to amplified plasmonic coupling. Consequently, top‐illuminated organic solar cells using such metal blend electrodes achieve a power conversion efficiency of 7.2% (which defines a new record for top illuminated organic solar cells) and even exceed the efficiency of similar bottom‐illuminated reference solar cells (6.9%) employing common ITO electrodes.     

Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell

The effect of doped-ZnO transparent conductive oxide (TCO) with metal (Ag)-fingers contact on GaN/InGaN solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements (such as B, Al, Ga, In and Sn) with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-InGaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO:Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes. The device achieves open circuit voltage~2.525 V, short circuit current~4.256 mA/cm², fill factor~87.86% and efficiency~9.22% under 1 Sun, air mass 1.5 global illumination.     

Pure CuBi2O4 Photoelectrodes with Increased Stability by Rapid Thermal Processing of Bi2O3/CuO Grown by Pulsed Laser Deposition

A new method for enhancing the charge separation and photo‐electrochemical stability of CuBi₂O₄ photoelectrodes by sequentially depositing Bi₂O₃ and CuO layers on fluorine‐doped tin oxide substrates with pulsed laser deposition (PLD), followed by rapid thermal processing (RTP), resulting in phase‐pure, highly crystalline films after 10 min at 650 °C, is reported. Conventional furnace annealing of similar films for 72 h at 500 °C do not result in phase‐pure CuBi₂O₄. The combined PLD and RTP approach allow excellent control of the Bi:Cu stoichiometry and results in photoelectrodes with superior electronic properties compared to photoelectrodes fabricated through spray pyrolysis. The low photocurrents of the CuBi₂O₄ photocathodes fabricated through PLD/RTP in this study are primarily attributed to their low specific surface area, lack of CuO impurities, and limited, slow charge transport in the undoped films. Bare (without protection layers) CuBi₂O₄ photoelectrodes made with PLD/RTP shows a photocurrent decrease of only 26% after 5 h, which represents the highest stability reported to date for this material. The PLD/RTP fabrication approach offers new possibilities of fabricating complex metal oxides photoelectrodes with a high degree of crystallinity and good electronic properties at higher temperatures than the thermal stability of glass‐based transparent conductive substrates would allow.     

Formation of Metal Nano‐ and Micropatterns on Self‐Assembled Monolayers by Pulsed Laser Deposition Through Nanostencils and Electroless Deposition

Patterns of noble‐metal structures on top of self‐assembled monolayers (SAMs) on Au and SiO₂ substrates have been prepared following two approaches. The first approach consists of pulsed laser deposition (PLD) of Pt, Pd, Au, or Cu through nano‐ and microstencils. In the second approach, noble‐metal cluster patterns deposited through nano‐ and microstencils are used as catalysts for selective electroless deposition (ELD) of Cu. Cu structures are grown on SAMs on both Au and SiO₂ substrates and are subsequently analyzed using X‐ray photoelectron spectroscopy element mapping, atomic force microscopy, and optical microscopy. The combination of PLD through stencils on SAMs followed by ELD is a new method for the creation of (sub)‐micrometer‐sized metal structures on top of SAMs. This method minimizes the gas‐phase deposition step, which is often responsible for damage to, or electrical shorts through, the SAM.     

Percolation Mechanism and Characterization of (CdO)y(ZnO)1–y Thin Films

(CdO)_y(ZnO)_1–y thin films have been prepared by the sol–gel process, based on precursor solutions used separately for such oxides. The Cd/(Cd + Zn) atomic ratio in solution ranged from 0 to 0.32. These compositions were selected on the basis of an observed abrupt fall, of ca. four orders of magnitude, in the resistivity of the films within this range. Such a resistivity drop, with a threshold value of around y = 0.17, is consistent with a percolation mechanism in a three‐dimensional, random, two‐phase system composed of isotropic, sphere‐like, conducting CdO regions embedded in a highly resistive ZnO matrix. Optical measurements show that the films are highly transparent, above 90 % transmission, for wavelengths ≥600 nm. The optical absorption edge shifts to longer wavelengths as the Cd content in the film increases. On the basis of the percolation mechanism observed in the multicomponent system (CdO)_y(ZnO)_1–y, possible future pathways are proposed for the design and construction of highly efficient, transparent, conducting oxides.     

Microstructured ZnO coatings combined with antireflective layers for light management in photovoltaic devices

We describe microstructured ZnO coatings that improve photovoltaic (PV) device performance through their antireflective properties and their tendency to scatter incoming light at large angles. In many PV devices, reflection from the transparent conductive top contact significantly degrades performance. Traditional quarter‐wave antireflective (AR) coatings reduce surface reflection but perform optimally for only a narrow spectral range and incident illumination angle. Furthermore, in some types of devices, absorption far from the junction increases the rate of recombination, and light management strategies are required to remedy this. The randomly patterned, microstructured ZnO coatings described in this paper, formed via a simple wet etch process, serve as both an AR layer with superior performance to that of a thin film AR coating alone as well as a large angle forward scatterer. We model formation of the coatings and evaluate their AR properties. When combined with a traditional quarter‐wave MgF₂ coating, these microstructured ZnO coatings increase short circuit currents of example Cu(In,Ga)Se₂ (CIGS) devices by over 20% in comparison to those of uncoated devices at normal incidence. A similar improvement is observed for illumination angles of up to 60°. While demonstrated here for CIGS, these structures may prove useful for other PV technologies as well. Published 2016. This article is a U.S. Government work and is in the public domain in the USA. Progress in Photovoltaics: Research and Applications Published by John Wiley & Sons Ltd.     

Chemical Control of Correlated Metals as Transparent Conductors

Correlated metallic transition metal oxides offer a route to thin film transparent conductors that is distinct from the degenerate doping of broadband wide gap semiconductors. In a correlated metal transparent conductor, interelectron repulsion shifts the plasma frequency out of the visible region to enhance optical transmission, while the high carrier density of a metal retains sufficient conductivity. By exploiting control of the filling, position, and width of the bands derived from the B site transition metal in ABO₃ perovskite oxide films, it is shown that pulsed laser deposition‐grown films of cubic SrMoO₃ and orthorhombic CaMoO₃ based on the second transition series cation 4d² Mo⁴⁺ have superior transparent conductor properties to those of the first transition series 3d¹ V⁴⁺‐based SrVO₃. The increased carrier concentration offered by the greater bandfilling in the molybdates gives higher conductivity while retaining sufficient correlation to keep the plasma edge below the visible region. The reduced binding energy of the n=4 frontier orbitals in the second transition series materials shifts the energies of oxide 2p to metal nd transitions into the near‐ultraviolet to enhance visible transparency. The A site size‐driven rotation of MoO₆ octahedra in CaMoO₃ optimizes the balance between plasma frequency and conductivity for transparent conductor performance.     

Structural and magnetic study of hard-soft systems with ZnO barrier grown by pulsed laser deposition

Hard-soft systems with magnetic transition metal electrodes and ZnO barrier of variable thickness have been epitaxially grown by pulsed laser deposition on MgO(1 0 0) substrates. The structural reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analysis have shown an epitaxial growth of the CoFe₂ bottom electrode, the permalloy top electrode and of the ZnO barrier. Magnetic measurements have shown a clear plateau with a separate reversal of both magnetizations of the top and bottom electrodes, which is promising for further tunnel magnetoresistance measurements. A ferromagnetic coupling between the magnetic electrodes through the barrier has been observed.     

Transparent InP Quantum Dot Light‐Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO₂ nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m^?2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.     

Interface‐Engineered Amorphous TiO2‐Based Resistive Memory Devices

Crossbar‐type bipolar resistive memory devices based on low‐temperature amorphous TiO₂ (a‐TiO₂) thin films are very promising devices for flexible nonvolatile memory applications. However, stable bipolar resistive switching from amorphous TiO₂ thin films has only been achieved for Al metal electrodes that can have severe problems like electromigration and breakdown in real applications and can be a limiting factor for novel applications like transparent electronics. Here, amorphous TiO₂‐based resistive random access memory devices are presented that universally work for any configuration of metal electrodes via engineering the top and bottom interface domains. Both by inserting an ultrathin metal layer in the top interface region and by incorporating a thin blocking layer in the bottom interface, more enhanced resistance switching and superior endurance performance can be realized. Using high‐resolution transmission electron microscopy, point energy dispersive spectroscopy, and energy‐filtering transmission electron microscopy, it is demonstrated that the stable bipolar resistive switching in metal/a‐TiO₂/metal RRAM devices is attributed to both interface domains: the top interface domain with mobile oxygen ions and the bottom interface domain for its protection against an electrical breakdown.     

Nanoscale Refractive Index Tuning of Siloxane‐Based Self‐Assembled Electro‐Optic Superlattices

The refractive indices of self‐assembled organic electro‐optic superlattices can be tuned by intercalating high‐Z optically transparent group 13 metal oxide sheets into the structures during the self‐assembly process. Microstructurally regular acentricity and sizable electro‐optic responses are retained in this straightforward synthetic procedure. This “one‐pot” all wet‐chemistry approach involves: i) layer‐by‐layer covalent self‐assembly of intrinsically acentric multilayers of high‐hyperpolarizability chromophores on inorganic oxide substrates, ii) protecting group cleavage to generate a large density of reactive surface hydroxyl sites, iii) self‐limiting capping of each chromophore layer with octachlorotrisiloxane, iv) deposition of metal oxide sheets derived from THF solutions of Ga(OⁱC₃H₇)₃ or In(OⁱC₃H₇)₃, and v) covalent capping of the resulting superlattices.