A low-profile power converter using printed-circuit board (PCB)power transformer with ferrite polymer composite

A new design of low-cost and low-profile power transformer is presented in this paper. The manufacturing cost of a power transformer can be reduced using the proposed printed-circuit board (PCB) transformer. The transformer windings are etched on the opposite sides of a double-sided PCB. Self-adhesive ferrite polymer composite (FPC) sheets are stuck on the two PCB surfaces to shield the magnetic flux induced from the transformer windings. The PCB transformer does not require manual winding and bobbin. A power converter prototype employing the PCB transformer has been implemented. The technique of choosing the optimum switching frequency of the power converter using the PCB transformer is addressed in this paper. The maximum power delivered from the prototype is 94 W. The maximum efficiency of the power converter is 83.5%     

Coreless printed circuit board (PCB) transformers with high power density and high efficiency

The authors report the use of a coreless printed circuit board transformer for power conversion with very high power density and efficiency. A coreless PCB transformer with an outermost radius of /spl sim/1 cm and 19 turns for both the primary and secondary windings can transfer 19 W at an efficiency of 90%, resulting in a record power density of 24 W/cm/sup 2/. The power density and energy efficiency of a coreless PCB transformer are higher than those of core-based microtransformers. Coreless transformers are simpler in structure, easier to implement in silicon wafer and cheaper than core-based planar transformers.     

基于STM32系列单片机的数控正弦波逆变电源设计与实现

提出一种高性能全数字式正弦波逆变电源的设计方案。该方案分为前后两级,前级采用推挽升压电路将榆入的直流电升压到350V左右的母线电压．后级采用全桥逆变电路,逆变桥输出经滤波器滤波后,用隔离变压器进行电压采样,电流互感器进行电流采样,以形成反馈环节,增加电源输出的稳定性。升压级PWM驱动及逆变级SPWM驱动均由STM32单片机产生。减小了硬件开支。基于上述方案试制的400W样机,具有输出短路保护、过流保护及输入过压保护、欠压保护功能。50Hz输出时频率偏差小于0．05Hz,满载（400W）效率高于87％,电压精度为220V±1％,THD小于1．5％。     

行波管高压电源中变压器的优化设计

研究了行波管高压电源中变压器的铁芯损耗、绕组损耗(铜损)和工作频率,主要通过理论推导和仿真对磁性元件的设计进行了优化分析,并用PC95材质PQ40/40磁芯设计了一种输出电压10kV、输出功率450 W的行波管高压电源变压器。变压器设计结果满足电源要求,实验结果验证了理论分析。     

高功率脉冲变压器设计

简要介绍了高功率脉冲变压器,讨论了国内外该领域相关研究现状,总结了高功率脉冲变压器设计中减小上升时间及顶降,展宽输出脉宽,提高耐压性能及能量效率的方法和闭路磁芯的应用.为了使高功率脉冲变压器具有高能量传输效率,且输出波形上升时间短,脉冲宽度宽,本文采用具有高磁导率和高饱和磁感应强度值的磁性材料制造的闭路磁芯,并在变压器...     

A monolithic transformer coupled 5-W silicon power amplifier with59% PAE at 0.9 GHz

This paper presents the circuit design and application of a monolithically integrated silicon radio-frequency power amplifier for 0.8-1 GHz. The chip is fabricated in a 25-GHz-f_T silicon bipolar production technology (Siemens B6HF). A maximum output power of 5 W and maximum efficiency of 59% is achieved. The chip is operating from 2.5 to 4.5 V. The linear gain is 36 dB. The balanced two-stage circuit design is based fundamentally on three on-chip transformers. The driver stage and the output stage are connected in common-emitter configuration. The input signal can be applied balanced or single-ended if one input terminal is grounded. One transformer at the input acts as balun as well as input matching network. Two transformers acts as interstage matching network     

A digitally controlled switch mode power supply based on matrix converter

High power telecommunication power supply systems consist of a three-phase switch mode rectifier followed by a dc/dc converter to supply loads at -48 V dc. These rectifiers draw significant harmonic currents from the utility, resulting in poor input power factor with high total harmonic distortion (THD). In this paper, a digitally controlled three-phase switch mode power supply based on a matrix converter is proposed for telecommunication applications. In the proposed approach, the matrix converter directly converts the low frequency (50/60Hz, three-phase) input to a high frequency (10/20kHz, one-phase) ac output without a dc-link. The output of the matrix converter is then processed via a high frequency isolation transformer to produce -48V dc. Digital control of the system ensures that the output voltage is regulated and the input currents are of high quality under varying load conditions. Due to the absence of dc-link electrolytic capacitors, power density of the proposed rectifier is expected to be higher. Analysis, design example and experimental results are presented from a three-phase 208-V, 1.5-kW laboratory prototype converter.     

大功率LED恒流驱动电源设计

为了驱动高功率LED,设计了一种基于隔离反激式原理的恒流驱动开关电源。该设计主要包括反激式开关电源电路的设计、开关电源变压器的选择和设计、功率因数校正电路的设计以及相关的各种保护电路的设计。综合考虑EMI和散热问题,对该电源进行了恰当的PCB设计并完成了实物制作,对该电源进行了输出测试和功率因数测试实验,实验结果表明该电源功率输出稳定,输出电压为41.8V,电流为338mA功率因数为0.86,并成功点亮了12个1 W的大功率LED。该设计对大功率LED的应用具有一定的参考价值。     

A single-stage electronic ballast with high power factor

A single stage electronic ballast with high power factor (HPF) is proposed in this letter. The single-phase boost-type rectifier provides HPF. A saturable transformer constituting the self-oscillating drive limits the lamp current and dominates the switching frequency of the ballast. Experimental results obtained on a 40 W fluorescent lamp are discussed     

The relationship between size and power dissipation in a 1-10 MHztransformer

The trade-off between size and power dissipation in the design of low-profile 1-10 MHz transformers with planar spiral windings is considered. For a fixed power loss and number of conductor layers, the transformer with the smallest possible footprint can be designed by a trade-off of core and copper loss. The relationship between the marginal reduction of the transformer footprint and the associated marginal increase in power dissipation and/or number of conductor layers for the design of the smallest possible transformer is discussed     

1.5 V high speed low power CMOS current sense amplifier

A 1.5 V high speed low power current sense amplifier for CMOS SRAMs is described. The design is based on the current mode approach and it can be fabricated using a standard CMOS process. The sensing speed is independent of the bit and data line capacitances and no equalisation is needed during the read access. HSPICE simulations have shown that the proposed circuit outperforms the recently reported circuits in terms of speed and average power dissipation     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.     

Off-line uninterruptible power supply with zero transfer time usingintegrated magnetics

An offline uninterruptible power supply (UPS) or emergency power system with zero transfer time is presented. The principal application is to personal computers and systems. The power transformer, a triport-like transformer, acts as an inverter and as a voltage stabilizer with no external loading coil. It is made with commercial EI scrapless laminations. The battery charging circuit is integrated into the transformer and improves the dynamic output response during line-mode operation. The result is robust, short-circuit-proof equipment with harmonic distortion of lower than 3%, a static output stability better than 1.5%, and a very high reliability     

A low frequency AC to high frequency AC inverter with build-in power factor correction and soft-switching

This paper presents a full bridge AC-AC inverter for high frequency power distribution system with power factor correction stage controlled by a unified controller. The proposed inverter has the following features: 1) load independent output voltage with constant frequency and very low total harmonic distortion (THD); 2) soft switching of the full bridge switches for a wide range of input voltage and load conditions; 3) low DC bus voltage; 4) simple control and cost effectiveness for the power factor correction stage. Operating principles and performance characteristics are presented, and guidance to design the converter is given. Experimental results of a 90-265V/sub ac/ input, 30 V/sub ac/ output at 100 kHz, 250 W laboratory prototype are given to verify the theoretical and simulation results. The proposed ac-ac inverter is attractive for low power (up to 250 W) high frequency applications.     

单端反激式LED开关电源变压器的设计

随着LED照明向普通照明领域进军,作为LED电源重要组成部分的高频电压器,体积小、功耗低、电磁辐射小、工作频率高,成为其主要的性能指标。针对此目的,对LED开关电源反激变压器的设计进行研究,结合实际采用面积乘积法设计一款单端反激式高频变压器,运用变压器电感电流断续的工作模式使得变压器的体积大大减小,同时在很大程度上也减小了变压器的电磁干扰辐射。通过3 W LED电源的制作测试实验对设计方案进行验证,结果证明了设计方案的可行性,达到了预期的效果。     

Ultrahigh frequency DC-to-DC converters using GaAs power switches

A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over silicon ones have been established and illustrated. Hybrid technology prototypes of DC-to-DC power converters operating above 10 MHz and exclusively using GaAs components have been realized: for a nonoptimized boost converter operating at 100 MHz, a power efficiency of 54% has been achieved with a 6 V/12 V conversion ratio and an output power of 1.5 W. For optimized prototypes, using high frequency assembly techniques, an efficiency of 80% at 50 MHz, 74% at 100 MHz and 60% at 250 MHz have been obtained with 6 V/12 V and 3 W     

基于TOP247Y的电机伺服系统用多路开关电源设计

文中设计了一种基于TOPSwitch-GX系列的电机伺服系统用多路单端反激式开关电源。该电源给系统控制板以及功率器件驱动电路提供5路＋15 V、1路-15 V、1路＋5 V独立电源,输出功率达到46 W。主要介绍了TOPS-witch-GX系列芯片的特点、开关电源辅助电路设计依据,着重分析了高频变压器的设计步骤,最后设计了基于TL431和光耦PC817的反馈补偿网络保证输出电压的稳定性。     

A Ku-band T-shaped gate GaAs power MESFET with high breakdownvoltage for satellite communications

^GaAs power MESFET's with 0.5-μm T-shaped gate for Ku-band power applications have been developed using a new self-aligned and optical lithography. It displays a maximum current density of 350 mA/mm, an uniform transconductance of 150 mS/mm and a high gate-to-drain breakdown voltage of 35 V. Both the high breakdown voltage and the uniform transconductance were achieved by the new MESFET design incorporating an undoped GaAs cap and a thick lightly doped active layers. The breakdown voltage is the highest one among the values reported on the power devices. The device exhibits 0.61 W/mm power density and 47% power added efficiency with 9.0 dB associated gain at a drain bias of 12 V and an operation frequency of 12 GHz     

New high power DC-DC converter with loss limited switching and lossless secondary clamp

A new isolated high frequency high power DC-DC converter full bridge topology employing one resonant "soft" switching pole that is zero voltage switched and one phase-shifted hard switching pole with loss limited switching for primary switching is presented. The devices in the loss limited pole do not have resonant capacitors across them, but exhibit significantly lower losses than conventional hard switching as the energy dissipation is limited by the finite energy stored in the leakage inductance. This unique combination of zero voltage switching and loss limited switching reduces the switching loss in all primary devices to lower levels. Isolation is achieved by a coaxially wound high frequency transformer with ultra low leakage which increases throughput and efficiency. A novel nondissipative secondary rectifier clamp allows excellent control of reverse recovery energy. Converters that produce 128 kW at 25 kHz have been developed and are commercially available. As this topology exhibits complete control of all parasitic loss mechanisms, it can be easily scaled to higher power levels.     

A GaAs high power RF single-pole dual throw switch IC fordigital-mobile communication system

A high power GaAs monolithic RF switch IC that can handle powers over 5 W (P1 dB: 37 dBm) with a positive 5-V control voltage was developed. This high power handling capability was achieved by using a novel circuit configuration that makes possible the feeding forward of the input-signal to the control gates. The implemented Single Pole Dual Throw switch IC integrated with the coupling capacitors using a high dielectric material, Barium Strontium Titanate, shows an insertion loss less than 0.8 dB at 1 GHz and an isolation over 25 dB in a frequency range of 0.5-1.5 GHz