Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

The effect of Ag content on the formation of Ag3Sn plates in Sn-Ag-Cu lead-free solder

The formation of Ag₃Sn plates in the Sn-Ag-Cu lead-free solder joints for two different Ag content solder balls was investigated in wafer level chip scale packages (WLCSPs). After an appropriate surface mount technology reflow process on a printed circuit board, samples were subjected to 150°C high-temperature storage (HTS), 1,000 h aging, or 1,000 cycles thermal cycling test (TCT). Sequentially, the cross-sectional analysis was scrutinized using a scanning electron microscope/energy dispersive spectrometer (SEM/EDX) to observe the metallurgical evolution of the amount of the Ag₃Sn plates at the interface and the solder bulk itself. Pull and shear tests were also performed on samples. It was found that the interfacial intermetallic compound (IMC) thickness, the overall IMC area, and the numbers of Ag₃Sn plates increase with increasing HTS and TCT cycles. The amount of large Ag₃Sn plates found in the Sn-4.0Ag-0.5 Cu solder balls is much greater than that found in the Sn-2.6Ag-0.5Cu solder balls; however, no significant difference was found in the joint strength between two different Ag content solder joints.     

Interfacial reactions and shear strengths between Sn-Ag-based Pb-free solder balls and Au/EN/Cu metallization

The morphological and compositional evolutions of intermetallic compounds (IMCs) formed at three Pb-free solder/electroless Ni-P interface were investigated with respect to the solder compositions and reflow times. The three Pb-free solder alloys were Sn3.5Ag, Sn3.5Ag0.75Cu, and Sn3Ag6Bi2In (in wt.%). After reflow reaction, three distinctive layers, Ni₃Sn₄ (or Ni-Cu-Sn for Sn3.5Ag0.75Cu solder), NiSnP, and Ni₃P, were formed on the electroless Ni-P layer in all the solder alloys. For the Sn3.5Ag0.75Cu solder, with increasing reflow time, the interfacial intermetallics switched from (Cu,Ni)₆Sn₅ to (Cu,Ni)₆Sn₅+(Ni,Cu)₃Sn₄, and then to (Ni,Cu)₃Sn₄ IMCs. The degree of IMC spalling for the Sn3.5Ag0.75Cu solder joint was more than that of other solders. In the cases of the Sn3.5Ag and Sn3Ag6Bi2In solder joints, the growth rate of the Ni₃P layer was similar because these two type solder joints had a similar interfacial reaction. On the other hand, for the Sn3.5Ag0.75Cu solder, the thickness of the Ni₃P and Ni-Sn-P layers depended on the degree of IMC spalling. Also, the shear strength showed various characteristics depending on the solder alloys and reflow times. The fractures mainly occurred at the interfaces of Ni₃Sn₄/Ni-Sn-P and solder/Ni₃Sn₄.     

Intermetallic reactions in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes

The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)₆Sn₅ interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag₃Sn precipitates and brick-shaped AuSn₄ IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)₃Sn₄ intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn₄ IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.     

Reliability of In-48Sn solder/Au/Ni/Cu BGA packages during reflow process

The interfacial reactions and shear properties of In-48wt.%Sn/Au/Ni/Cu solder joints were investigated in terms of reflow conditions, i.e., reflow temperature and duration time. The thickness of an AuIn₂ intermetallic compound (IMC) layer, formed at the solder/substrate interface, slightly increased with the duration time. The spalling of the AuIn₂ intermetallics in the solder led to the formation of a Ni₃(Sn,In)₄ IMC layer between the solder and exposed Ni layer. The longer duration time resulted in the spalling and grain growth of Ni₃(Sn,In)₄ intermetallics. The higher reflow temperature accelerated the interfacial reactions between the solder and substrate. From the ball shear test results, the formation and growth of a continuous plate-shaped AuIn₂ IMC layer increased the shear force of the solder joints, whereas the spalling and grain growth of cubic-shaped AuIn₂ intermetallics significantly decreased the shear force. The formation and spalling of cubic-shaped Ni₃(Sn,In)₄ intermetallics increased the shear force, whereas the spalling and grain growth of polyhedron-shaped Ni₃(Sn,In)₄ intermetallics decreased the shear force. The crack propagated at the Au-rich/AuIn₂/solder interface in the initial reflow stage, then toward the AuIn₂ intermetallics dispersed in the solder matrix, and finally along the Ni₃(Sn,In)₄ intermetallics spalling off in the solder.     

Studies of electroless nickel under bump metallurgy—Solder interfacial reactions and their effects on flip chip solder joint reliability

The electroless-deposited Ni-P under bump metallurgy (UBM) layer was fabricated on Al pads for Sn containing solder bumps. The amount of P in the electroless Ni film was optimized by controlling complexing agents and the pH of plating solution. The interfacial reaction at the electroless Ni UBM/solder interface was investigated in this study. The intermetallic compound (IMC) formed at the interface during solder reflowing was mainly Ni₃Sn₄, and a P-rich Ni layer was also formed as a by-product of Ni-Sn reaction between the Ni-Sn IMC and the electroless Ni layer. One to four microns of Ni₃Sn₄ IMC and a 1800–5000 Å of P-rich Ni layer were formed in less than 10 min of solder reflowing depending on solder materials and reflow temperatures. It was found that the P-rich Ni layer contains Ni, P, and a small amount of Sn (～7 at.%). Further cross-sectional transmission electron microscopy (TEM) analysis confirmed that the composition of the P-rich Ni layer was 75 at.% Ni, 20at.%P, and 5at.%Sn by energy-dispersive x-ray spectroscopy (EDS) and the phase transformation occurred in the P-rich Ni layer by observing grain size. Kirkendall voids were also found in the Ni₃Sn₄ IMC, just above the P-rich Ni layer after extensive solder reflow. The Kirkendall voids are considered a primary cause of the brittle fracture; restriction of the growth of of the P-rich Ni layer by optimizing proper processing conditions is recommended. The growth kinetics of Ni-Sn IMC and P-rich Ni layer follows three steps: a rapid initial growth during the first 1 min of solder reflow, followed by a reduced growth step, and finally a diffusion-controlled growth. During the diffusion-controlled growth, there was a linear dependence between the layer thickness and time^1/2. Flip chip bump shear testing was performed to measure the effects of the IMC and the P-rich Ni layers on bump adhesion property. Most failures occurred in the solder and at the Ni₃Sn₄ IMC. The brittle characteristics of the Ni-Sn IMC and the Kirkendall voids at the electroless Ni UBM-Sn containing solder system cause brittle bump failure, which results in a decreased bump adhesion strength.     

Interface Reaction Between Electroless Ni–Sn–P Metallization and Lead-Free Sn–3.5Ag Solder with Suppressed Ni3P Formation

The voids formed in the Ni₃P layer during reaction between Sn-based solders and electroless Ni–P metallization is an important cause of rapid degradation of solder joint reliability. In this study, to suppress formation of the Ni₃P phase, an electrolessly plated Ni–Sn–P alloy (6–7 wt.% P and 19–21 wt.% Sn) was developed to replace Ni–P. The interfacial microstructure of electroless Ni–Sn–P/Sn–3.5Ag solder joints was investigated after reflow and solid-state aging. For comparison, the interfacial reaction in electroless Ni–P/Sn–3.5Ag solder joints under the same reflow and aging conditions was studied. It was found that the Ni–Sn–P metallization is consumed much more slowly than the Ni–P metallization during soldering. After prolonged reaction, no Ni₃P or voids are observed under SEM at the Ni–Sn–P/Sn–3.5Ag interface. Two main intermetallic compounds, Ni₃Sn₄ and Ni₁₃Sn₈P₃, are formed during the soldering reaction. The reason for Ni₃P phase suppression and the overall mechanisms of reaction at the Ni–Sn–P/Sn–3.5Ag interface are discussed.     

IMC Growth at the Interface of Sn–2.0Ag–2.5Zn Solder Joints with Cu,Ni, and Ni–W Substrates

Growth of intermetallic compounds (IMC) at the interface of Sn–2.0Ag–2.5Zn solder joints with Cu, Ni, and Ni–W substrates have been investigated. For the Cu substrate, a Cu₅Zn₈ IMC layer with Ag₃Sn particles on top was observed at the interface; this acted as a barrier layer preventing further growth of Cu–Sn IMC. For the Ni substrate, a thin Ni₃Sn₄ film was observed between the solder and the Ni layer; the thickness of the film increased slowly and steadily with aging. For the Ni–W substrate, a thin Ni₃Sn₄ film was observed between the solder and Ni–W layer. During the aging process a thin layer of the Ni–W substrate was transformed into a bright layer, and the thickness of bright layer increased with aging.     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

Microstructure and shear strength evolution of Sn-Ag-Cu solder bumps during aging at different temperatures

Flip-chip devices with Sn-3.8Ag-0.7Cu solder on electroless Ni (EN) without immersion Au were studied after aging at different temperatures. The (Cu,Ni)₆Sn₅ intermetallics (IMCs) growth was volume diffusion controlled and Kirkendall voids were found in the Ni₃P layer even at the initial stage of high-temperature aging due to the faster diffusion of Ni in the Ni₃P layer via its column structure boundaries. The Ag₃Sn IMCs were distributed in the bulk solder, existing as plate- or lamella-like phases or as small particles around the β-Sn dendrites, and the (Cu,Ni)₆Sn₅ IMCs existed as facet-like phases. The plate- and lamella-like Ag₃Sn phases break up into small parts and these broken parts, together with small Ag₃Sn particles, coarsen into pebble-like phases during high-temperature aging. Shear tests showed that all the solder bumps fractured in the bulk solder. The shear strength of solder bumps decreases at the initial stage of aging at 150°C and 175°C, and the strength degradation during aging may be caused by the coarsening of small Ag₃Sn particles.     

Shear strength and fracture surface analysis of Sn58Bi/Cu solder joints under a wide range of strain rates

The influences of the strain rate on the shear strength and failure mode of Sn58Bi/Cu solder joints were investigated. After reflowing, some Kirkendall voids were observed at the neighborhood of the Cu₃Sn/Cu interface or in the inner Cu₃Sn layer. In addition, another type of void could also be observed inside the Sn58Bi eutectic solders, and its size was much larger than that of Kirkendall voids. Some Bi particles were obviously found to segregate at the interface between the Cu-Sn IMC and the Sn58Bi solder. The single lap shear test results indicated that the strain rate had an important influence on the shear strength and failure mode of Sn58Bi/Cu solder joints. The shear strength of joints demonstrated increment at first and then decrement as the strain rate increased from 3.33 × 10⁻⁴ s⁻¹ to 3.33 s⁻¹. It was observed that all Sn58Bi/Cu solder joints broke in a mixed-type fracture mode under a wide range of strain rates. Additionally, more broken IMC grains were exposed on the fracture face and more fracture occurred within the IMC layer with increasing strain rate. Furthermore, the fracture path gradually moved from the solder side to the inner IMC side as the strain rate increased.     

The nanoindentation characteristics of Cu<Subscript>6</Subscript>Sn<Subscript>5</Subscript>, Cu<Subscript>3</Subscript>Sn,and Ni<Subscript>3</Subscript>Sn<Subscript>4</Subscript> intermetallic compounds in the solder bump

In general, formation and growth of intermetallic compounds (IMCs) play a major role in the reliability of the solder joint in electronics packaging and assembly. The formation of Cu-Sn or Ni-Sn IMCs have been observed at the interface of Sn-rich solders reacted with Cu or Ni substrates. In this study, a nanoindentation technique was employed to investigate nanohardness and reduced elastic moduli of Cu₆Sn₅, Cu₃Sn, and Ni₃Sn₄ IMCs in the solder joints. The Sn-3.5Ag and Sn-37Pb solder pastes were placed on a Cu/Ti/Si substrate and Ni foil then annealed at 240°C to fabricate solder joints. In Sn-3.5Ag joints, the magnitude of the hardness of the IMCs was in the order Ni₃Sn₄>Cu₆Sn₅>Cu₃Sn, and the elastic moduli of Cu₆Sn₅, Cu₃Sn, and Ni₃Sn₄ were 125 GPa, 136 GPa, and 142 GPa, respectively. In addition, the elastic modulus of the Cu₆Sn₅ IMC in the Sn-37Pb joint was similar to that for the bulk Cu₆Sn₅ specimen but less than that in the Sn-3.5Ag joint. This might be attributed to the strengthening effect of the dissolved Ag atoms in the Cu₆Sn₅ IMC to enhance the elastic modulus in the Sn-3.5Ag/Cu joint.     

Al/Ni : V/Ag metal stacks as rear‐side metallization for crystalline silicon solar cells

Rear sides of crystalline silicon solar cells are usually covered with aluminum on which it is difficult to solder. To ease soldering, we present a durability study for a Ni : V/Ag stack on evaporated Al as rear‐side metallization. We adapt this cost‐effective metallization stack from the microelectronic industry and investigate it as metallization for silicon solar cells. Here, a long‐term stability of the metallization and of the solder joint must be guaranteed for 25 years and is therefore evaluated in detail by thermal aging experiments. During this experiment, the mechanical stability of the solder joints is measured. The chemical stability and the intermetallic compound (IMC) growth within the solder joints are examined by secondary electron microscopy, backscattered electron imaging, and energy dispersive X‐ray analysis. Experiments with either a Sn–Ag‐coated copper tab or pure Sn–Ag solder show two different sorts of IMCs at the Ni : V/Solder interface. With the copper tab, a Cu–Ni–Sn compound, presumably (Cu_{1 ‐ x}Ni_x)₆Sn₅, grows at the Ni/solder interface, whereas in case of a pure Sn–Ag solder, a Ni–Sn compound grows, which is likely to be Ni₃Sn₄. Analysis of the reaction kinetics leads to activation energies of 77 and 42 kJ/mol, respectively, for a diffusion‐controlled IMC growth. By using temperature histograms of PV modules in the field, the necessary minimum Ni : V layer thickness is estimated: without a copper tab up to 1.6 µm Ni and with a copper tab less than 0.2 µm may be consumed by IMC formation during 25 years of lifetime. Copyright © 2012 John Wiley & Sons, Ltd.     

Fast Concurrent Growth of Ni3Sn4 and Voids During Solid-State Reaction Between Sn-Rich Solder and Ni Substrates

To simulate the growth of Ni₃Sn₄ phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu_1−x Ni _x )₆Sn₅/Ni and Sn/Ni diffusion couples were aged isothermally at 180°C and 200°C, and the growth kinetics of the (Ni,Cu)₃Sn₄ and Ni₃Sn₄ layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu)₃Sn₄ layer was formed at the (Cu,Ni)₆Sn₅/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu)₃Sn₄ layer growing predominantly at the (Ni,Cu)₃Sn₄/Ni interface by fast diffusion of Sn across the (Ni,Cu)₃Sn₄ layer. It is proposed that the accelerated growth of the (Ni,Cu)₃Sn₄ and Ni₃Sn₄ layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer.     

Comparison of Sn2.8Ag20In and Sn10Bi10In solders for intermediate-step soldering

We chose Sn−2.8Ag−20In and Sn−10Bi−10In (numbers are in weight percentages unless specified otherwise) as Pb-free solder materials for intermediate-step soldering. We then investigated how the two solders reacted with the under bump metallurgy (UBM) of Au/Ni (Au: 1.5 μm and Ni: 3 μm) at 210°C, 220°C, 230°C, and 240°C for up to 4 min. All, of the Au UBM was dissolved into the solder matrix as soon as the interfacial reaction started. The reaction formed Au(In, Sn)₂ in the case of SnAgIn, and it formed Au(Sn, In)₄ and Au(In, Sn)₂ in the case of SnBiIn. The formation mechanism of the intermetallic phases is explained thermodynamically. The exposed Ni layer reacted with the solder and formed Ni₂₈Sn₅₅In₁₇ in case of SnAgIn, and formed Ni₃(Sn, In)₄ in case of SnBiIn, at the solder joint interface. Under the same soldering conditions, the Ni₃(Sn,In)₄ layer in the SnBiIn/UBM is thicker than the Ni₂₈Sn₅₅In₁₇ layer in the SnAgIn/UBM. Because of the thicker intermetallic compound layer, the SnBiIn solder joint has weaker shear strength than the SnAgIn solder joint.     

A Study on the Thermal Reliability of Cu/SnAg Double-Bump Flip-Chip Assemblies on Organic Substrates

The Cu/SnAg double-bump structure is a promising candidate for fine-pitch flip-chip applications. In this study, the interfacial reactions of Cu (60 μm)/SnAg (20 μm) double-bump flip chip assemblies with a 100 μm pitch were investigated. Two types of thermal treatments, multiple reflows and thermal aging, were performed to evaluate the thermal reliability of Cu/SnAg flip-chip assemblies on organic printed circuit boards (PCBs). After these thermal treatments, the resulting intermetallic compounds (IMCs) were identified with scanning electron microscopy (SEM), and the contact resistance was measured using a daisy-chain and a four-point Kelvin structure. Several types of intermetallic compounds form at the Cu column/SnAg solder interface and the SnAg solder/Ni pad interface. In the case of flip-chip samples reflowed at 250°C and 280°C, Cu₆Sn₅ and (Cu, Ni)₆Sn₅ IMCs were found at the Cu/SnAg and SnAg/Ni interfaces, respectively. In addition, an abnormal Ag₃Sn phase was detected inside the SnAg solder. However, no changes were found in the electrical contact resistance in spite of severe IMC formation in the SnAg solder after five reflows. In thermally aged flip-chip samples, Cu₆Sn₅ and Cu₃Sn IMCs were found at the Cu/SnAg interface, and (Cu, Ni)₆Sn₅ IMCs were found at the SnAg/Ni interface. However, Ag₃Sn IMCs were not observed, even for longer aging times and higher temperatures. The growth of Cu₃Sn IMCs at the Cu/SnAg interface was found to lead to the formation of Kirkendall voids inside the Cu₃Sn IMCs and linked voids within the Cu₃Sn/Cu column interfaces. These voids became more evident when the aging time and temperature increased. The contact resistance was found to be nearly unchanged after 2000 h at 125°C, but increases slightly at 150°C, and a number of Cu/SnAg joints failed after 2000 h. This failure was caused by a reduction in the contact area due to the formation of Kirkendall and linked voids at the Cu column/Cu₃Sn IMC interface.     

Intermetallic reactions in Sn-3.5Ag solder ball grid array packages with Ag/Cu and Au/Ni/Cu pads

During the reflow process of Sn-3.5Ag solder ball grid array (BGA) packages with Ag/Cu and Au/Ni/Cu pads, Ag and Au thin films dissolve rapidly into the liquid solder, and the Cu and Ni layers react with the Sn-3.5Ag solder to form Cu₆Sn₅ and Ni₃Sn₄ intermetallic compounds at the solder/pad interfaces, respectively. The Cu₆Sn₅ intermetallic compounds also appear as clusters in the solder matrix of Ag surface-finished packages accompanied by Ag₃Sn dispersions. In the solder matrix of Au/Ni surface-finished specimens, Ag₃Sn and AuSn₄ intermetallics can be observed, and their coarsening coincides progressively with the aging process. The interfacial Cu₆Sn₅ and Ni₃Sn₄ intermetallic layers grow by a diffusion-controlled mechanism after aging at 100 and 150°C. Ball shear strengths of the reflowed Sn-3.5Ag packages with both surface finishes are similar, displaying the same degradation tendencies as a result of the aging effect.     

Microstructure and shear strength of Sn37Pb/Cu solder joints subjected to isothermal aging

The effects of isothermal aging on the microstructure and shear strength of Sn37Pb/Cu solder joints were investigated. Single-lap shear solder joints of eutectic Sn37Pb solder were aged for 1–10 days at 120 °C and 170 °C, respectively, and then loaded to failure in shear with a constant loading speed of 5 × 10⁻³ mm/s. The growth of the interfacial Cu–Sn intermetallic compounds (IMC) layer (Cu₆Sn₅ + Cu₃Sn) of Sn37Pb/Cu solder joints subjected to isothermal aging exhibited a linear function of the square root of aging time, indicating that the formation of Cu–Sn IMC was mainly controlled by the diffusion mechanism. And the diffusion coefficient (D) values of IMC layer were 1.07 × 10⁻¹⁷ and 3.72 × 10⁻¹⁷ m²/s for aged solder joints at 120 °C and 170 °C, respectively. Shear tests results revealed that as-reflowed solder joint had better shear strength than the aged solder joints and the shear strength of all aged solder joints decreased with increasing aging time. The presence of elongated dimple-like structures on the fracture surfaces of these as-reflowed or aged for short time solder joints were indicative of a ductile failure mode. As aging time further increased, the solder joints fractured in the mixed solder/IMC mode at the solder/IMC interface.     

Intermetallics Evolution in Sn-3.5Ag Based Lead-Free Solder Matrix on an OSP Cu Finish

The 0.2Co + 0.1Ni dual additives were used to dope a Sn-3.5Ag solder matrix to modify the alloy microstructure and the solder joint on an organic solderability preservative (OSP) Cu pad. The refined microstructure of the Sn-3.5Ag-0.2Co-0.1Ni solder alloy or the reduced β-Sn size was attributed to the depressed undercooling achieved by the Co-Ni addition. After soldering on the OSP Cu pad, a large Ag₃Sn plate was formed at the Sn-3.5Ag/OSP solder joint, whereas it was absent at the Sn-3.5Ag-0.2Co-0.1Ni/OSP solder joints. With isothermal aging at 150°C, large Ag₃Sn plates formed at the Sn-3.5Ag/OSP solder joint were still observed. A coarsened and dispersed Ag₃Sn phase was found in the solder joints with Co-Ni additions as well. Compared to Cu₆Sn₅, the (Co,Ni)Sn₂ intermetallic compound showed much lower microhardness values. However, (Co,Ni)Sn₂ hardness was comparable to that of the Ag₃Sn phase. Pull strength testing of Sn-3.5Ag-0.2Co-0.1Ni/OSP revealed slightly lower values than for Sn-3.5Ag/OSP during aging. Such results are thought be due to the phase transformation of (Co,Ni)Sn₂ to (Cu,Co,Ni)₆Sn₅.     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.