Gimbal-less monolithic silicon actuators for tip-tilt-piston micromirror applications

In this paper, fully monolithic silicon optical scanners are demonstrated with large static optical beam deflection. The main advantage of the scanners is their high speed of operation for both axes: namely, the actuators allow static two-axis rotation in addition to pistoning of a micromirror without the need for gimbals or specialized isolation technologies. The basic device is actuated by four orthogonally arranged vertical comb-drive rotators etched in the device layer of an silicon-on-insulator wafer, which are coupled by mechanical linkages and mechanical rotation transformers to a central micromirror. The transformers allow larger static rotations of the micromirror from the comb-drive stroke limited rotation of the actuators, with a magnification of up to 3/spl times/ angle demonstrated. A variety of one-axis and two-axis devices have been successfully fabricated and tested, in all cases with 600-/spl mu/m-diameter micromirrors. One-axis micromirrors achieve static optical beam deflections of >20/spl deg/ and peak-to-peak resonant scanning of >50/spl deg/ in one example at a resonant frequency of 4447 Hz. Many two-axis devices utilizing four rotators were tested, and exhibit >18/spl deg/ of static optical deflection at <150 V, while their lowest resonant frequencies are above 4.5 kHz for both axes. A device which utilizes only three bidirectional rotators for tip-tilt-piston actuation achieves -10/spl deg/ to 10/spl deg/ of optical deflection in all axes, and exhibits minimum resonant frequencies of 4096 and 1890 Hz for rotation and pistoning, respectively. Finally, we discuss the preliminary results in scaling tip-tilt-piston devices down to 0.4 /spl times/ 0.4 mm on a side for high fill-factor optical phased arrays. These array elements include bonded low-inertia micromirrors which fully cover the actuators to achieve high fill-factor.     

High-power VCSELs: single devices and densely packed 2-D-arrays

We report on vertical-cavity surface-emitting lasers (VCSELs) and laser arrays providing high output powers in the 980-nm wavelength regime. Extensive investigations on size scaling behavior of single top- and bottom-emitting devices concerning fundamental electrooptical and thermal properties show limits of attainable output characteristics. Maximum experimentally achieved continuous-wave (CW) optical output powers at room temperature are 180 and 350 mW for top- and bottom-emitting VCSELs, respectively. Detailed analysis on the thermal interaction between closely spaced elements have been carried out to describe the thermally induced power limitations of two-dimensional arrays. Fabricated heat sunk bottom-emitting arrays of 23 elements and 40-μm aperture size of individual elements show output powers of 0.56 W CW at room temperature and 0.8 W actively cooled, resulting in 0.33 kW/cm² and 0.47 kW/cm² maximum spatially averaged optical power density, respectively     

Wurtzite GaN-based heterostructures by molecular beam epitaxy

Progress in plasma and reactive molecular beam epitaxy (PMBE and RMBE) grown n- and p-type GaN and GaN-AlGaN-based epitaxial films and optoelectronic devices is reviewed. The growth of GaN by RMBE (PMBE) is achieved by employing ammonia gas (plasma activated nitrogen) as the nitrogen source with resultant growth rates of about 2 μm/h (⩾1 μm/h). The structural, electrical, and optical properties of binary and ternary (Al,Ga)N and (In,Ga)N layers point to high quality. The GaN layers with Mg as the dopant atoms are p-type without any postgrowth treatment, but the hole concentrations are limited to mid 10¹⁷ cm^-3 although reports in the low 10¹⁸ cm^-3 dot the literature. The background carrier concentration, mobility, optical characteristics and ability to dope p-type depend significantly on the substrate temperature and V-III ratio employed, AlGaN-GaN, and GaN-InGaN electroluminescent devices have been realized but lack commercial quality. The AlGaN-GaN photodiodes by RMBE exhibited a maximum zero-bias responsivity of 0.12 A/W at 364 nm, which decreased by more than three orders of magnitude for wavelengths longer than 390 nm. A reverse bias of -10 V raised the responsivity to 0.15 A/W without any significant increase in noise. The noise equivalent noise power near zero bias is below the detection limit of the measurement setup. At a reverse bias of 28 V, the total noise equivalent power is 2.06×10^-11 W     

Interferometric near-field imaging technique for phase andrefractive index profiling in large-area planar-waveguide optoelectronicdevices

A versatile, interferometric optical technique is described for nondestructively imaging the near-field output phase uniformity and refractive index profile in broad-area optoelectronic waveguide devices or heterostructure materials. In active traveling-wave optical power amplifier devices, measurements are presented for thermal lensing, solder bond inhomogeneities, heatsink impedance, and carrier-lensing effects due to nonuniform gain saturation by the amplifier input beam, transverse amplified spontaneous emission, or intensity filaments. The thermal performance of diamond and copper heatsinks for high-power optical amplifiers is compared. In passive devices, the technique is used to observe heteroepitaxial material compositional uniformity, defects, photoelastic stress, and intentional structural waveguide index modifications. The technique has a phase and spatial resolution as low as λ/100 and 1 μm. The corresponding refractive index and temperature resolutions (dependent on device length) are as low as Δn=10^-5 and ΔT=0.025°C for 1000-μm-long devices     

Pressure estimation in vacuum circuit breakers

The pressure of vacuum switching elements after production is checked normally by Penning or magnetron methods (combined electrical and magnetic field). Vacuum in the range of 10^-1 to 10^-4 Pa can be measured in this way. After assembly into circuit breakers however, these methods are not applicable. HF interruption performance during the make operation was proposed earlier as a possible alternative. Further investigations show that differences in the number of HF prestrike current loops can be found in the pressure range of 10 ^-1 to 10⁵ Pa. Current chopping of dc arcs between 5 and 30 A during the opening operation may be another option for determination of the pressure range by measuring the lifetime of the arc, but the resolution in the vacuum range <10^-1 Pa is too poor     

Calculation of calorimetric effect of thermo-field electronemission

The aim of the calculation presented in this report is to get more data about the specific calorimetric effect, e.g. the cathode cooling or heating per electron, of thermo-field electron emission from metals over wide ranges of work functions, eφ=2.0 to 4.5 eV, electron temperatures T_c=2000 to 4500 K, and electric field strengths F=10⁶ to 10⁸ Vcm^-1. For metals such as Cu, Nb, Mo, and W, most commonly used in vacuum electron discharge devices, the temperature range has been further expanded up to 500 to 10000 K     

Magnetically actuated micromirror and measurement system for motioncharacteristics using specular reflection

Micromachined magnetically actuated torsional micromirrors have been fabricated. The micromirrors based on silicon were actuated by moving magnet system using hard magnetic (Co-Pt) or soft magnetic (Fe-Ni) thin films. And a system to measure motion characteristics of the micromirrors was assembled with an optical table, optical mounts, and optics. The system is based on a specular reflection of He-Ne laser from the micromirrors. We measured static and resonance characteristics of the micromirrors with Co-Pt film or Fe-Ni film. Then we measured Q factors of the micromirrors; with Co-Pt film in vacuum. Using our system for measurements, we obtained motion characteristics of micromirrors at large angular deflections. Measured resonance characteristics of all micromirrors are in good agreement with the equation of forced vibration with viscous damping. Micromirrors with Co-Pt films have better reproducibility of torsional motions than ones with Fe-Ni films in both dc magnetic field and ac magnetic field. And micromirrors with Fe-Ni films have torsional motion with subpeak at resonance characteristics. The Co-Pt film is more useful as a magnetic film for the micromirror than the Fe-Ni film at static and resonance characteristics     

Discharge characteristics under non-uniform electric field in He,Ar and air at low pressures

We measured dc discharge inception voltage V_i for various electrode configurations in He, Ar and air in vacuum range from 10⁵ to 10^-1 Pa to determine discharge characteristics under a space vacuum environment. By quantitative consideration of the E_i/p distribution in the gap space at the discharge inception, the discharge inception mechanism under non-uniform electric field was investigated in vacuum. At the same time, we observed the discharge profile variation with residual gas pressure and quantitatively analyzed its characteristics, using an image processing technique. Based on the analysis, we found that the dependency of the discharge inception voltage and the length of the discharge path on the residual gas pressure under non-uniform field conditions agreed well with that previously obtained for uniform field conditions     

High-speed imaging of the pulsed-field flashover of an aluminaceramic in vacuum

An intensified high-speed imaging technique was used to observe the optical events associated with the pulsed-field breakdown of an alumina ceramic tube having two concentric planar electrodes metalized onto its end face. HV pulses, typically of 5 kV amplitude (5 kV μs ^-1 rate of rise), were applied to the radial MIM insulator-electrode regime under ultrahigh vacuum (pressure <5×10^-7 Pa), with video recordings made at 1000 frames per second. Images of the observed breakdown phenomena are presented, viewed both along the center axis and also in the plane of the MIM structure. These breakdown images are discussed in relation to plasma jets associated with vacuum arcs and, in particular, on the nature of the ion species within such jets     

Microdischarge arrays: a new family of photonic devices

The optical and electrical characteristics of microdischarge devices and arrays fabricated in semiconductors and metal/polymer structures are described. Devices as small as (10 μm)² in emitting area (nanoliters in volume) and arrays as large as 30 × 30 have been demonstrated and operated at gas pressures up to and exceeding one atmosphere. This new generation of microoptical sources is capable of producing photons from the infrared to the vacuum ultraviolet and beyond and is well suited for integration with microoptoelectronic, fluidic, and mechanical systems     

Microdischarge arrays: a new family of photonic devices

The optical and electrical characteristics of microdischarge devices and arrays fabricated in semiconductors and metal/polymer structures are described. Devices as small as (10 μm)² in emitting area (nanoliters in volume) and arrays as large as 30 × 30 have been demonstrated and operated at gas pressures up to and exceeding one atmosphere. This new generation of microoptical sources is capable of producing photons from the infrared to the vacuum ultraviolet and beyond and is well suited for integration with microoptoelectronic, fluidic, and mechanical systems     

燃煤电厂湿式电除尘器减排及能效特性研究

在工况及负荷稳定的情况下,对122台燃煤电厂配套湿式电除尘器(金属板式35台、导电玻璃钢87台)开展多污染物的减排特性和能耗测试分析,结果表明,湿式电除尘器对各类污染物均具有较高的脱除效率,绝大部分湿式电除尘器出口颗粒物、PM2.5、雾滴和SO3可分别控制在5、2.5、25和10 mg/m3以下,出口PM2.5/PM占...     

Segmented silicon-micromachined microelectromechanical deformablemirrors for adaptive optics

Deformable mirrors improve optical efficiency of a system by correcting the wave front aberration caused by imperfections in the system components or by turbulent atmosphere in case of telescope optics. Micromachined mirror technology has the potential to substantially reduce the cost of adaptive optics systems. First, a brief review of the work in this field is presented with the goal of informing the reader of the challenges in the micromachined adaptive optics and the implementation tradeoffs including stress-induced curvature of multilayer mirrors. Then, recent results on the silicon micromachined, hybrid integrated microelectromechanical deformable mirrors for adaptive optics developed at the University of Colorado are presented. Various microfabrication processes including surface micromachining, bulk micromachining, and flip-chip assembly are implemented to fabricate high optical fill factor and large-stroke piston-type micromirror arrays. The achieved micromirror deflection for some designs is in the range of 2 to 3.5 μm, which results in the operating wavelength within infrared spectrum. Techniques to integrate microlenses on top of the micromirrors using self-aligned solder or transfer of ultrasmooth mirror plates on top of the micromirror actuators using flip-chip create high optical fill factor devices. Experimental results of aberration correction with such devices are presented     

催化氧化法脱除燃煤烟气中的单质汞

提出了一种超价金属化合物二过碘酸合铜（DPC）与过渡金属离子Ni（II）共建的液相催化氧化体系,可将烟气中难溶于水的气态单质汞（Hg⁰）转化为易溶于水的氧化态汞（Hg²⁺）,之后利用湿式吸收设备去除。对影响脱汞效率的关键因素进行了实验研究,结果表明,Ni（II）对脱汞效率有较大促进作用,在最佳实验条件下（DPC为0.18 mmol/L,Ni（II）为4×10^-5mmol/L,反应温度为45 ℃,溶液pH为8.5）,稳定的平均脱汞效率达到93.3%。烟气中的SO^2-尤其是在高浓度下,对脱汞效率影响较大,而NO对脱汞影响微弱。此外,通过对反应产物的分析,推测了反应体系中的活性支配物种及Ni（II）存在下的反应机理。此工作可为研发新型烟煤烟气脱汞技术,尤其是液相催化氧化脱汞技术提供参考。     

High-Performance InGaAs/InP Single-Photon Avalanche Photodiode

In_0.53Ga_0.47As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP=4.5X 10^-17W/Hz^1/2 W/Hz) at 200 K and 1.31 mum. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4X4 SPAD array are reported.     

InGaAs-GaAs quantum-dot lasers

Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states. Record threshold current densities of 40 A·cm ^-2 at 77 K and of 62 A·cm^-2 at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of ~80 %. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to ~50 meV, ultrahigh material gain of ~10⁵ cm^-1, differential gain of ~10^-13 cm² and strong nonlinear gain effects with a gain compression coefficient of ~10^-16 cm³. The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states. The linewidth enhancement factor is ~0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 μm and 1.37 μm at 300 K     

A three-layer 3D silicon system using through-Si vertical opticalinterconnections and Si CMOS hybrid building blocks

We present for the first time a three-dimensional (3D) Si CMOS interconnection system consisting of three layers of optically interconnected hybrid integrated Si CMOS transceivers. The transceivers were fabricated using 0.8-μm digital Si CMOS foundry circuits and were integrated with long wavelength InP-based emitters and detectors for through-Si vertical optical interconnections. The optical transmitter operated with a digital input and optical output with operation speeds up to 155 Mb/s. The optical receiver operated with an external optical input and a digital output up to 155 Mb/s. The transceivers were stacked to form 3D through-Si vertical optical interconnections and a fabricated three layer stack demonstrated optical interconnections between the three layers with operational speed of 1 Mb/s and bit-error rate of 10^-9     

Tunable optical transversal filters based on a Gires-Tournois interferometer with MEMS phase shifters

We present tunable optical filters based on a modified Gires-Tournois interferometer. The back reflection plane of the interferometer is replaced with a one-dimensional micromirror array for phase modulation. Using Gaussian beam optics, we show that the transfer function of the device has the form of the transversal filter in digital signal processing. The design and analysis techniques of conventional digital filters can, therefore, be adapted to tunable optical filters. Both the amplitude and phase of the transfer function can be controlled by reconfiguring the micromirrors. Application examples in dispersion compensation and variable bandwidth bandpass filtering are discussed and experimentally demonstrated.     

Capture of fine particles on charged moving spheres: a newelectrostatic precipitator

It was verified experimentally that electrostatic cleanup of fly ash dust is possible using the scrubbing action of charged copper particles with diameters 10-100 times the size of the dust particles. Results show that target efficiencies in excess of unity (up to 1.8) are possible as a result of the induced charge on the target particles. Power consumption to the precipitator was confirmed to be very small (~5×10^-4 W). Values of the total collection efficiency of 0.65 (65%) were obtained for a precipitator zone length of 1.2 cm (in the direction of air flow) at air velocities of about 3 cm/s. This value decreased with increasing air flow rate. Collection efficiencies up to 0.99 (99%) are projected with a longer test section of at least 5.3 cm in length for low air velocities of about 3 cm/s, an electric field strength of 10.91 kV/cm, and 114.5 μm copper particles     

Improved output performance of high-power VCSELs

The intention of this paper is to report on state-of-the-art high-power vertical-cavity surface-emitting laser diodes (VCSELs), single devices as well as two-dimensional (2-D) arrays. Both approaches are studied in terms of electrooptical characteristics, beam performance, and scaling behavior. The maximum continuous wave (CW) output power at room temperature of large-area bottom-emitting devices with active diameters up to 320 μm is as high as 0.89 W, which is to our knowledge the highest value reported for a single device. Measurements under pulsed conditions show more than 10-W optical peak output power. Also, the CW performance of 2-D arrays has been increased from 0.56 W for 23 elements to 1.55 W for 19 elements due to significantly improved heat sinking. The extracted power densities spatially averaged over the area close to the honeycomb-like array arrangement raised from 0.33 kW/cm² to 1.25 kW/cm². Lifetime measurements have proven acceptable reliability for over 10000 h at a degradation rate of less than 1% per 1000 h. The emission wavelength of bottom-emitting devices is restricted to about 900 nm or higher due to fundamental absorption in the GaAs substrate. Windowing of the substrate has been studied to allow for shorter wavelength emission