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1.
本文在分析MOS管恒跨导输入级和AB类输出级运算放大器的基础上设计了一个高摆率、恒跨导的轨对轨运算放大器。在输入级中采用了齐纳二极管的稳压原理,保证Rail-to-Rail运算放大器的输入跨导恒定。为了实现高转换率,本文采用了一种新型的压摆率提高电路。另外,为了提高系统的稳定性,采用了控制零点的米勒补偿进行频率补偿。采...  相似文献   

2.
基于国内某CMOS工艺设计了一种单一PMOS差分对的轨到轨输入、恒跨导CMOS运算放大器。输入级电路采用折叠共源共栅结构,通过体效应动态调节输入管的阈值电压扩展共模输入范围到正负电源轨,恒定共模输入范围内的跨导,自级联电流镜有源负载将差分输入转换为单端输出;输出级电路采用AB类结构实现轨到轨输出,线性跨导环确定输出管的静态偏置电流。在5 V电源电压,2.5 V共模电压,1 MΩ负载条件下,经Spectre仿真验证,该运算放大器开环增益为119 dB,相位裕度为58°,共模输入范围为0.0027~4.995 V,共模范围内跨导变化小于3%,实现了轨到轨输入共模范围内的跨导恒定。  相似文献   

3.
郭仲杰 《电子器件》2021,44(1):72-76
为了解决轨对轨运算放大器输入级跨导随共模输入电压变化的影响,采用实时共模电压监测技术,动态跟踪轨对轨运放输入级的跨导变化,通过对偏置电流的高精度定量补偿,从而实现了对输入级跨导的恒定性控制。基于0.18μm CMOS工艺进行了具体电路的设计实现,结果表明:在电源电压3.3 V、负载电阻100Ω、负载电容1 nF的条件下,运放增益为148 dB、相位裕度为61°、功耗为39.6μW,共模输入范围高达0~3.3 V,输入级跨导变化率仅为2.1%。  相似文献   

4.
本文介绍了一种预放大-锁存CMOS滞回比较器,在输入级采用轨到轨结构,使用一种新颖的电流求和电路,大大降低了输入级传输时延.器件采用sMIC0.18μm标准CMOS工艺库,在Cadence Spectre环境下仿真,结果表明:此较器的工作频率达到250MHz以上,静态工作电流为257μA,上升时延为1.94ns,下降时延为1.81ns,低频增益为89dB.  相似文献   

5.
设计了一款基于电荷泵高压内电源的恒定跨导轨到轨运算放大器.输入级采用PMOS差分对结构,通过电荷泵产生高于电源电压的输入级内电源,使运放在轨到轨输入范围能正常工作并保持输入跨导恒定.电荷泵电路所需的时钟信号通过内部振荡器电路产生,再通过电压自举电路和时序电路产生所需电平的非交叠开关控制信号,最后利用时间交织结构输出连续稳定的高压内电源.在电荷泵实现中还采用了辅助开关结合跟随运放的结构降低了主开关在切换时的毛刺.该运放在折叠式共源共栅结构中使用增益自举结构提高了总体增益,输出级采用class AB类输出结构实现轨到轨输出.该运算放大器基于0.5μm CMOS工艺完成电路与版图设计,仿真结果表明,在5 V电源电压下,直流增益为150.76 dB,单位增益带宽为53.407 MHz,相位裕度为96.1°,输入级跨导在轨到轨输入共模范围内的变化率为0.001 25%.  相似文献   

6.
基于UMC的0.6μm BCD 2P2M工艺,探讨了一种高性能Rail-to-Rail恒定跨导CMOS运算放大器.该运算放大器的输入级采用互补差分对,其尾电流由共模输入信号来控制,以此来保证输入级的总跨导在整个共模范围内保持恒定.输出级采用ClassAB类控制电路,并且将其嵌入到求和电路中,以此减少控制电路电流源引起的噪声和失调.为了优化运算放大器低频增益、频率补偿、功耗及谐波失真,求和电路采用了浮动电流源来偏置.该运算放大器采用米勒补偿实现了18MHz的带宽,低频增益约为110dB,Rail-to-Rail引起的跨导变化约为15%,功耗约为10mW.  相似文献   

7.
介绍了一种低电压、低功耗、动态摆幅大、高频带的运算放大器,电路采用恒定跨导的轨对轨输入级,偏置电路采用折叠共源共栅电流镜结构,采用0.35uM CMOS工艺实现,有较好的兼容性,可应用于基带数字通信芯片设计及其相关领域。  相似文献   

8.
邢利东  蔡敏 《半导体技术》2006,31(11):859-861,870
设计了一个轨到轨输入输出范围的低噪声运算放大器.在输入级采用电流补偿的方法来稳定该运算放大器在整个输入共模范围内的跨导,在输出级使用AB类的输出方法来提高运算放大器的输出范围,并运用双极晶体管比较低的闪烁噪声来改善该运算放大器的噪声性能,以此提高该运算放大器的动态范围.  相似文献   

9.
曹正州  孙佩 《电子与封装》2019,19(11):22-25
设计了一种低电压恒定跨导的轨到轨运算放大器,作为误差放大器用在BUCK型DC-DC上实现对输出电压的调节。该运算放大器采用两级结构,输入级采用互补差分对的结构,实现了轨到轨电压的输入,并且利用2倍电流镜技术实现了跨导的恒定;输出级采用AB类放大器的结构,提高了输出电压摆幅和效率,实现了轨到轨电压的输出。该电路基于CSMC 0.25μm EN BCDMOS工艺进行设计,仿真结果表明:电源电压为2.8 V时,在输出端负载电容为160 pF、负载电阻为10 kΩ的情况下,增益为124 dB,单位增益带宽积为5.76 MHz,相位裕度为59.9℃,输入跨导为5.2 mΩ~(-1),共模抑制比为123 dB,输入共模信号范围为0~2.8V,输出电压摆幅为0~2.8 V。  相似文献   

10.
薛超耀  韩志超  欧健  黄冲 《电子科技》2013,26(9):121-123,130
设计了一种新颖的恒跨导轨对轨CMOS运算放大器结构。输入级采用轨对轨的结构,在输入级采用4个虚拟差分对管来对输入差分对的电流进行限制,使运放的输入级跨导在工作范围内保持恒定。输出级采用前馈式AB类输出结构,以使输出达到全摆幅。仿真结果显示,在5 V电源电压和带有10 pF电容与10 kΩ电阻并联的负载下,该运放在共模输入范围内实现了恒跨导,在整个共模输入范围内跨导变化率仅为3%,输出摆幅也达到了轨对轨全摆幅,运放的开环增益为108.5 dB,增益带宽积为26.7 MHz,相位裕度为76.3°。  相似文献   

11.
The minimum-maximum (minimax) circuit selects the minimum and maximum of two input currents. Four transistors in matched pairs are operated in the saturation region. Because the behavior of the circuit is based on matched devices and is independent of the relationship between the drain current and the gate-source voltage, transistor pairs may operate in strong, moderate and weak inversion. Therefore, the circuit can also be implemented in bipolar as well as MOS technology. The circuit has many useful applications in modern signal processing  相似文献   

12.
介绍了一种工作在2.5V电压下、具有全摆幅输入与输出功能的两级CMOS运算放大器。通过一种简单有效的电流跟踪电路实现了输入跨导恒定的要求,这样使得频率补偿变得容易实现;为了降低功耗,输入级工作在弱反型区:输出级采用带有前馈控制电路的AB类输出电路,实现了输出信号的轨至轨。电路具有结构简单、功耗低、面积小、性能高等优点。  相似文献   

13.
A novel CMOS exponential transconductor which employs only three NMOS transistors operating in weak inversion, is presented. The main advantage of the proposed circuit is its wide range of exponential behaviour, which reaches up to five decades of current range, and above 10 μA to an input voltage range of 800 mV. The physical realisation is achieved in two forms: in the first one, the circuit is implemented with discrete MOS transistor arrays by CD4007 series; in the second one, the circuit is fully integrated in a 0.5 μm CMOS standard process. Simulated and experimental results of the proposed exponential transconductor are also presented.  相似文献   

14.
A 0.9-V 0.5-μA, rail-to-rail CMOS operational amplifier designed with weak inversion techniques is presented. Depletion-mode nMOS transistors buffer a bulk-driven pMOS differential pair to realize wide input dynamic range, while the output stage architecture provides symmetric rail-to-rail output drive through the use of a low-voltage translinear control circuit  相似文献   

15.
A weak inversion region is shown to exist in ion-sensitive field effect transistor (ISFET) sensors. It is therefore proposed that the ISFET and its chemically sensitive (ChemFET) counterparts be used as translinear elements in the synthesis of novel biochemical input stages which perform real-time mathematical manipulation of biochemical signals. A Biochemical Translinear Principle using weakly inverted ChemFETs is presented. A low-power current-mode input stage circuit is presented as an application of the principle. This yields a linear relation between drain current and hydrogen ion concentration valid over four decades. This paper demonstrates an important and necessary step toward biochemical VLSI.  相似文献   

16.
In this paper floating gate MOS (FGMOS) transistor based fully programmable Gaussian function generator (GFG) is presented. The circuit combines the exponential characteristics of MOS transistor in weak inversion, tunable property of FGMOS transistor, and its square law characteristic in strong inversion region to implement the GFG. FGMOS based squarer is the core sub circuit of GFG that helps to implement full Gaussian function for positive as well as negative half of the input voltage. FGMOS implementation of the circuit provides low voltage operation, low power consumption, reduces the circuit complexity and increases the tunability of the circuit. The performance of circuit is verified at 0.75 V in TSMC 0.18 μm CMOS, BSIM3 and level 49 technology by using Cadence Spectre simulator. To ensure robustness of the proposed GFG, simulation results for various process corner variations have also been included.  相似文献   

17.
In this paper, we propose a robust and scalable constant- rail-to-rail CMOS input stage for VLSI cell libraries. The proposed circuit does not rely on the characteristics and particular operation (strong, moderate, and weak inversion) regions of the input transistors and is insensitive to mismatches between p- and n-channel devices. Only standard CMOS transistors are used in the circuit without any special devices, such as floating-gate or depletion-mode transistors. Very small variations (less than ) have been achieved without sacrificing the large-signal behavior. The proposed circuit is proven effective for both long-channel and deep sub-micron CMOS technologies and is suitable for VLSI cell libraries, audio/video, embedded mixed-signal system-on-chip (SoC), and other applications. A prototype amplifier with rail-to-rail input common-mode range has been designed and fabricated in a standard 0.35-m CMOS technology. Experimental results confirm the effectiveness and robustness of proposed techniques.  相似文献   

18.
A novel complementary metal-oxide semiconductor (CMOS) current mirror that can work in weak and strong inversion is proposed. The mirror is capable of accurately copying current in the nano-ampere range. The proposed scheme eliminates the DC matching error caused by the difference between drain-to-source voltages of both the input and output transistors. The proposed circuit was verified using ORCAD simulator in 0.8 μm CMOS process technology. Simulation results confirm the functionality and accuracy of the circuit.  相似文献   

19.
A low-voltage fully differential CMOS operational amplifier withconstant-gmand rail-to-rail input and output stages ispresented. It is the fully differential version of a previously realizedsingle-ended operational amplifier where a novel circuit to ensure constanttransconductance has been implemented [1]. The input stage is a rail-to-railstructure formed by two symmetrical OTAs in parallel (the input transistorsare operating in weak inversion). The class-AB output stages have also afull voltage swing. A rail-to-rail input common mode feedback structureallows the output voltage control. Measurements in a 0.7 µ standardCMOS process with threshold voltages of about 0.7 V have been done. Theminimum experimental supply voltage is about 1.1 V. The circuit provides a60 dB low frequency voltage gain and about 1.5 MHz unity gain frequency fora total power consumption of about 0.72 mW at a 1.5 V supply voltage.  相似文献   

20.
A solid-state chemical sensor ion sensitive field effect transistor (ISFET) that operates in weak inversion and interfaces with negative current feedback to maximise linearity is proposed. The power consumption of this circuit when operating in the weak inversion region is in the nanowatt range, which makes it suitable for biomedical applications  相似文献   

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