共查询到17条相似文献,搜索用时 171 毫秒
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阳极氧化钛箔合成高度有序的TiO2纳米管阵列。通过电化学自掺杂的方法对原始TiO2纳米管阵列电极进行改性,研究了不同掺杂条件对TiO2纳米管阵列电极电化学性能的影响,探索了电化学自掺杂的最佳实验参数。实验结果表明:电化学未掺杂的原始TiO2纳米管阵列电极表现出的最大比电容仅为1.55 mF·cm^-2,在25℃下0.5 mol/L的Na2SO4溶液中,施加5 V电压掺杂30 s后,TiO2纳米管阵列电极导电性显著增强,比电容可达到22.17 mF·cm^-2,是原始TiO2纳米管阵列电极比电容的14.3倍,电化学自掺杂显著提高了TiO2纳米管的导电性及电容性能。同时,电化学自掺杂不会损坏或改变TiO2纳米管的形貌和晶体结构。 相似文献
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纳米TiO_2半导体催化活性的研究进展 总被引:6,自引:1,他引:5
纳米TiO2半导体催化技术具有广阔的应用前景,近年来半导体光催化已成为功能陶瓷材料、光化学、环境保护、生物技术等领域的研究热点之一。本文简要介绍了近年来国内外纳米TiO2半导体光催化剂的研究进展,主要包括纳米TiO2光催化剂的作用机理及结构的影响;提高催化活性的方法,指出了表面贵金属沉积、复合半导体、金属离子掺杂和表面光敏化是提高催化活性和催化效率的有效途径。 相似文献
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以Ti35Nb合金为基材,通过阳极氧化和中温热处理制备了Nb掺杂TiO2纳米管阵列。通过掩模版和磁控溅射技术在纳米管阵列表面形成了Pt电极,随后在低浓度H2气氛中测试了Nb掺杂TiO2纳米管阵列的氢敏性能。实验结果表明阳极氧化温度是影响纳米管生长的一个重要因素,在阳极氧化电压为15V和阳极氧化温度为30℃的条件下可以获得均匀开口的非晶纳米管阵列。将非晶纳米管在450℃热处理后可以获得锐钛矿结构纳米管阵列。氢传感实验结果表明,Nb掺杂TiO2纳米管对低浓度气氛具有室温氢敏特性。以上实验结果表明,通过合金化设计和阳极氧化可以制备出具有室温氢传感特性的掺杂纳米管阵列。 相似文献
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通过N2气氛高温退火、Nb2O5掺杂和采用梳状电极结构等方法,成功提高了TiO2基敏感材料的电导率。实验证明,降低氧分压可增强TiO2自身半导化程度;掺入10%左右Nb2O5,Nb5+替代Ti4+形成固溶体,可使TiO2得到最佳半导化效果;采用梳状电极结构,可以在一定程度上减小器件阻值,从而为制造低阻、高灵敏度、高选择性动物食品测鲜传感器开辟了一条新途径。 相似文献
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纳米TiO_2光催化剂的改性及应用研究进展 总被引:1,自引:0,他引:1
对纳米TiO2的光催化反应机理及制备方法做了简要阐述,重点介绍了目前在纳米TiO2掺杂改性方面,尤其是非金属掺杂和共掺杂改性方面的研究进展。氮掺杂的TiO2是新发现的具有可见光催化活性的复合光催化剂,非金属掺杂可以使复合物的禁带宽度小于纯TiO2的禁带宽度,从而使TiO2的吸收边向可见光方向移动。对TiO2的N、C、S、P、卤素掺杂以及共掺杂的国内外研究现状进行了评述,分析了提高TiO2可见光催化活性的原因。对纳米TiO2光催化应用领域进行简单介绍,最后提出了在TiO2光催化剂研究中期待解决的问题及今后的发展方向。 相似文献
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基于激光加工的平面型微型超级电容器 总被引:1,自引:0,他引:1
随着便携式可穿戴电子产品的快速发展,亟需开发小型化柔性新能源储能器件与之匹配。平面型微型超级电容器(MSC)因具有功率密度高、循环寿命长、易于集成等特点,在微型储能器件中备受关注。在多种构建微型超级电容器的方法中,激光处理是一种便捷高效、可快速集成化的加工手段。鉴于此,综述了激光加工平面型微型超级电容器的研究进展,包括激光辅助构建微型储能器件的方式、典型的激光加工的平面型微型超级电容器及其电极材料,材料包括石墨烯类、MXene类、金属氧化物类、聚合物类以及金属有机框架(MOF)类等。同时,对激光加工微型超级电容器未来的发展趋势和面临的挑战进行了展望。 相似文献
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Au nanoparticles doped TiO2 nanowires (NWs) arrays with an average diameter of 100 nm were synthesized through a facile solvothermal method. Thereafter, metal/semiconductor/metal (MSM) structured detectors with Ag electrodes were fabricated on these NWs. The ultraviolet (UV) sensing characteristics of pure TiO2 and Au-doped ones (Au-TiO2) were investigated. Compared with pure TiO2, the Au-TiO2 NWs based device shows a much lower dark current of 1.5 nA at 3 V bias. The low dark current mechanism might be due to the promoted directional transmission of carriers induced by Au doping. The photoresponse is nearly one order of magnitude under 360 nm monochromatic illumination. The Au-TiO2 NWs detector with simple fabrication process, low noise and good overall performance provides a broad way in fabricating UV imaging arrays. 相似文献
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Libin Fang Caiyun Wang Leilei Huangfu Naoufal Bahlawane He Tian Yunhao Lu Hongge Pan Mi Yan Yinzhu Jiang 《Advanced functional materials》2019,29(46)
Conversion‐type electrode materials are emerging as promising candidates for high‐energy rechargeable batteries, owing to their substantially higher theoretical capacity relative to intercalation‐based materials. Nevertheless, the full benefit from conversion‐type electrode materials remains out of reach in sodium‐ion batteries, due to the inadequate conversion reaction toward sodium and the poor reversibility during desodiation. Here, a full conversion reaction with high reversibility is demonstrated through promoting the initial sodium intercalation and subsequent reconversion kinetics by transition metal doping. The doping‐induced lowering of the sodium intercalation energy in thermodynamics effectively drives the full conversion reaction, while the metal transition of the doped element enhances reconversion kinetics in achieving high reversibility. The obtained results open a new avenue for the development of high‐performance conversion‐type electrodes and provide a novel understanding of the conversion reaction mechanism. 相似文献
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Yong Hyun Kim Jin Soo Kim Won Mok Kim Tae‐Yeon Seong Jonghee Lee Lars Müller‐Meskamp Karl Leo 《Advanced functional materials》2013,23(29):3645-3652
High performance indium tin oxide (ITO)‐free small molecule organic solar cells and organic light‐emitting diodes (OLEDs) are demonstrated using optimized ZnO electrodes with alternative non‐metallic co‐dopants. The co‐doping of hydrogen and fluorine reduces the metal content of ZnO thin films, resulting in a low absorption coefficient, a high transmittance, and a low refractive index as well as the high conductivity, which are needed for the application in organic solar cells and OLEDs. While the established metal‐doped ZnO films have good electrical and optical properties, their application in organic devices is not as efficient as other alternative electrode approaches. The optimized ZnO electrodes presented here are employed in organic solar cells as well as OLEDs and allow not only the replacement of ITO, but also significantly improve the efficiency compared to lab‐standard ITO. The enhanced performance is attributed to outstanding optical properties and spontaneously nanostructured surfaces of the ZnO films with non‐metallic co‐dopants and their straightforward integration with molecular doping technology, which avoids several common drawbacks of ZnO electrodes. The observations show that optimized ZnO films with non‐metallic co‐dopants are a promising and competitive electrode for low‐cost and high performance organic solar cells and OLEDs. 相似文献
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Sungkweon Baek Sungho Heo Haejung Choi Hyunsang Hwang 《Electron Device Letters, IEEE》2005,26(3):157-159
The electrical characteristics of HfO/sub 2/ pMOSFETs prepared by B/sub 2/H/sub 6/ plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-/spl kappa/ oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide thickness was increased due to the interaction between aluminum and HfO/sub 2/, which resulted in reduced capacitance. In contrast, the Al-TaN stacked gate showed good reflectivity up to laser energy of 500 mJ/cm/sup 2/ and improved capacitance was obtained compared with the Al gate. For the first time, the electrical characteristics of a HfO/sub 2/ pMOSFET with an Al-TaN gate fabricated by plasma doping and excimer laser annealing were demonstrated. It was also demonstrated that plasma doping and excimer laser annealing combined with a metal gate could be applied for high-/spl kappa/ oxide MOSFET fabrication. 相似文献