Enhancement of fluorine doped amorphous carbon thin films from microwave surface wave plasma activated above room temperature

Fluorinated amorphous carbon (a-C:F) thin films were synthesized above room temperature by microwave surface wave plasma chemical vapour deposition (MW SWP CVD). The effect of deposition temperature on optical, electrical, chemical and bonding properties of the a-C:F films were studied by ultraviolet–visible spectroscopy (UV–VIS), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectrometry (XPS), Raman spectrometry and TEM measurements. The film exhibits high transparency and decrease in optical band gap with increasing deposition temperature. FTIR study shows the increase in CC and decrease in C–Fx bonds of the films with increasing deposition temperature. Raman study shows some important structural changes in the films due to fluorine incorporation. XPS result shows the shift of carbon peak to higher binding energy due to carbon fluorine link to the films. TEM shows the increasing graphitic layer in the films with increasing deposition temperature.     

A green approach for the preparation of nanostructured zinc oxide: Characterization and promising antibacterial behaviour

In the present study, nanostructured zinc oxide (ZnO) films have been successfully synthesized using fruit extract of Viburnum opulus L. (VO) on glass slides by successive ionic layer adsorption and reaction (SILAR) procedure. The impact of VO concentrations on the structural, morphological, optical, electrical, and antibacterial attributes of ZnO films has been investigated in detail. The samples' XRD patterns present a hexagonal crystal structure with a preferential orientation along the (002) plane. The crystallite size values of ZnO samples were found to be in the ranges from 14.88 to 9.23 nm. The supplementation of VO to the synthesis solution remarkably affected the surface morphological features of the ZnO films. The optical results demonstrated that band gap energy values of the ZnO films at room temperature were decreased from 3.20 to 3.07 eV as a function of VO content in the bath solution. The films' electrical properties were determined by impedance analysis in the frequency range of 20 Hz ?1 MHz. Impedance-frequency measurements showed VO insertion to ZnO thin films cause an increase in impedance value at the low frequencies. Cole-Cole plots with a single semi-circle confirmed the contribution of grain and grain boundary for the electrical conduction process. The agar disk diffusion method was used to test the antibacterial properties of ZnO/VO inserted ZnO and inhibition zones were measured. VO inserted ZnO showed a stronger inhibitory effect on gram-positive bacteria Staphylococcus aureus (ATCC 25923) and gram-negative bacteria Escherichia coli (ATCC 35218) than ampicillin antibiotic used as a control group. In line with the promising bactericidal results of a new generation, VO inserted ZnO, the nanostructured product with this study, it can also be applied in multidrug-resistant clinical isolates obtained from patients.     

Synthesis and characterization of ZnO:Ni thin films grown by spray-deposition

In the present study, nickel-doped zinc oxide thin films (ZnO:Ni) at different percentages (0–10%) were deposited on glass substrates by using a chemical spray technique. The effect of Ni concentration on the structural and optical properties of the ZnO:Ni thin films was investigated. The effect of Ni contents on the crystalline structure and optical properties of the films was systematically investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV–vis, Photoluminescence spectra PL, and Raman spectrometry. The XRD analysis showed that both the undoped and Ni-doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The XRD analysis also showed that the films were well crystallized in würtzite phase with the crystallites preferentially oriented towards (002) direction parallel to the c-axis. SEM study reveals the surface of NiZnO to be made of nanocrystalline particles. The SEM images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The band gap decreased up to the 7 at% Ni doping level, but the band gap increased after 10 at% Ni doping level. All thin films exhibited approximately 80% and above transmittance in the visible region. PL spectra of undoped and Ni-doped ZnO thin films showed some marked peaks at 376, 389, 494, and 515 nm. The obtained results revealed that the structures and optical properties of the films were greatly affected by doping levels. These films are useful as conducting layers in electro chromic and photovoltaic devices. Finally, all results were discussed in terms of the nickel doping concentration.     

Effects of electron doping on the d0 magnetism in N-implanted ZnO and ZnAlO films

In this paper, N ions are implanted into ZnO and ZnAlO films with different carrier concentrations prepared by radio frequency reactive magnetron sputtering on sapphire substrates. The structural, electrical, optical and magnetic properties of N-doped and (Al, N) co-doped ZnO films is investigated, and the particular emphasis is placed on the effects of carrier concentration on the defects induced magnetism in the films. Our results show that all the doped ZnO films are ferromagnetic at room temperature. A trace amount of additional Al doping has a significant effect on the improvement of ferromagnetic properties, and a maximum saturation magnetization of 73 emu/cm³ is obtained for (Al, N) co-doped ZnO films. The optical band gaps of ZnO films increase with the increasing Al doping content, which is owing to the combined effect of high carrier concentration and the Burstein Moss effect. The average transmittance of all ZnO films exceeds 80%. Our results confirm that appropriate electron doping can effectively enhance the magnetic moment in N implanted ZnO which may also apply to other ZnO systems with d⁰ magnetism.     

Optical band gap modulation by Mg-doping in In2O3(ZnO)3 ceramics

In this study, different amounts of Mg were doped in In₂O₃(Zn_1−xMg_xO)₃ and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein–Moss effect.     

Effect of post-deposition annealing on the properties of ZnO films obtained by high temperature,micro-controller based SILAR deposition

The ZnO thin films were prepared by successive ionic layer adsorption and reaction (SILAR) method at elevated precursor temperature. The films were later subjected to post-deposition annealing at different temperatures. This annealing process was found to be beneficial as it improved the structural and optical properties of the films. The ZnO films obtained by SILAR were found to be polycrystalline with hexagonal crystal structure. The crystallite size of the films increased considerably after annealing. The annealed films also showed very high absorption in UV region with marginal change in band gap. Both the crystallite size and optical absorbance were found to increase proportionately with the annealing temperature.     

Effect of Au ion beam on structural,surface, optical and electrical properties of ZnO thin films prepared by RF sputtering

In the present work, ZnO thin films were irradiated with 700?keV Au⁺ ions at different fluence (1?× 10¹³, 1?× 10¹⁴, 2?× 10¹⁴ and 5?× 10¹⁴ ions/cm²). The structural, morphological, optical and electrical properties of pristine and irradiated ZnO thin films were characterized by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR), scanning electron microscope (SEM), spectroscopy ellipsometry (SE) and four point probe technique respectively. XRD results showed that the crystallite size decreased from pristine value at the fluence 1?×?10¹³ ions/cm², with further increase of ion fluence the crystallite size also increased due to which the crystallinity of thin films improved. SEM micrographs showed acicular structures appeared on the ZnO thin film surface at high fluence of 5?×?10¹⁴ ions/cm². FTIR showed absorption band splitting due to the growth of ZnO nanostructures. The optical study revealed that the optical band gap of ZnO thin films changed from 3.08?eV (pristine) to 2.94?eV at the high fluence (5?× 10¹⁴ ions/cm²). The electrical resistivity of ZnO thin film decreases with increasing ion fluence. All the results can be attributed to localized heating effect by ions irradiation of thin films and well correlated with each other.     

Zinc oxide films deposited by radio frequency plasma magnetron sputtering technique

Zinc oxide (ZnO) is a wide band gap transparent conductive oxide (TCO) material with a lot of potential applications including transparent thin-film sensors, transistors (TFTs), solar cells, and window insulation systems. In this work, ZnO films were deposited on glass substrates by the radio frequency (RF) plasma magnetron sputtering deposition technique. The effects of the RF power on the properties of the ZnO films were elucidated. The influences of the RF power on the surface morphology, structural, and optical properties of the ZnO films were investigated by Mahr surface profilometer, Atomic Force Microscopy (AFM), X-ray diffractometer (XRD), and ultraviolet–visible (UV–VIS) spectrophotometer. To allow for accurate comparison of the power effects, ZnO films with similar thickness deposited at different RF powers were examined. The RF power effects on the properties of the ZnO films are revealed and discussed in this paper.     

Influence of post-annealing condition on the properties of ZnO films

The study of the properties of zinc oxide (ZnO) films has gained popularity recently due to its potential in a wide range of applications, such as thin-film solar cells, transistors, sensors and other optoelectronic devices. In this work, low cost sol–gel spin coating technique was employed to fabricate the ZnO films. The influences of post-annealing condition on the properties of the ZnO films were investigated. The ZnO films were annealed under ambient, nitrogen and vacuum environments at 450 °C and the environment effects on the ZnO films were compared. Furthermore, the effect of cooling period allowed for the ZnO films after the post-annealing process was examined. The ZnO films were characterized using surface profilometer, atomic force microscopy, X-ray diffractometer, and ultraviolet–visible transmission spectroscopy in order to study the thickness, surface morphology, crystallinity, and optical properties of the ZnO films. The optical band gap of the ZnO films was estimated based on the thickness and the optical transmittance data. These investigations serve to clarify the effects of different post-annealing conditions in order to optimize the properties of the ZnO films.     

One dimensional (1-D) signatures of nanopillars and nanowires in niobium doped zinc oxide (NZO) thin films prepared by aerosol assisted chemical vapour deposition (AACVD)

We report for the first time a facile synthesis of niobium (Nb) doped (1-D) ZnO nanopillars and nanowires by aerosol assisted chemical vapour deposition with improved structural and optical properties. The micro structural, vibrational and optical properties of Nb-doped ZnO were investigated by X-ray diffraction (XRD), Raman spectroscopy, Scanning electron microscopy (SEM)/Energy dispersive spectroscopy (EDS) and UV–Vis spectroscopy (UV/VIS). The results presented show that Nb doping and solvent choice can effectively control the growth of ZnO nanostructures as well as their reproducibility. The XRD results revealed that the highest estimated crystallite size of Nb doped ZnO was found to be 4.7 nm from depositions conducted in methanol and 5.4 nm from depositions conducted in toluene for 0.2 M% Nb doping. It is further explored that with an increase of Nb content, ZnO films show poor crystallinity with preferential orientation along the 0 0 2 plane. The change in morphology and local structure of ZnO also led to variations in the vibrational properties of the materials. Upon Nb doping, the A1 (LO) mode of ZnO was found to red shift and broaden, whereas a blue shift was found for the 2A1 (LO), 2E1 (LO) and 2LO vibrational modes. The UV–Visible spectroscopy of Nb doped ZnO revealed that excellent visible transmittance (∼89%) was achievable and witnessed an increase in band gap from 3.3 eV to 3.5 eV with increased Nb doping.     

Boron and nitrogen co-doped ZnO thin films for opto-electronic applications

The transparent conductive oxides such as ZnO have been widely studied due to their potential applications. As a promising wide band gap semiconductor, ZnO thin films with various dopants are important in fabricating the photonic devices to meet the various needs. In this study, boron and nitrogen co-doped ZnO thin films were fabricated at different temperatures (100–600 °C) on sapphire (0 0 1) substrates using pulsed laser deposition technique. X-ray diffractometer, atomic force microscope, spectrophotometer and spectrometer were used to characterize the structural, morphological and optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.     

Effect of doping concentration on the properties of aluminium doped zinc oxide thin films prepared by spray pyrolysis for transparent electrode applications

Zinc oxide possesses many interesting properties, such as modifiable conductivity, wide band gap, high excitonic binding energy, piezo-electric polarisation and cathodoluminiscence. In this study transparent conducting aluminium doped zinc oxide (ZnO:Al) thin films were deposited on float glass substrates by tailor made spray pyrolysis with adaptation for measuring the actual temperature of the substrate surface during deposition. The films were characterised and the effect of aluminium doping concentration [Al/Zn] on their optical, electrical and structural properties was investigated as a function of aluminium doping between 0 and 10 at.%. There was widening of optical band gap with increasing doping concentration. ZnO:Al films with low resistivity of 2.8 × 10⁻² Ω cm and high transmittance of over 85% at 550 nm which are crucial for opto-electrical applications were obtained at a doping ratio of 2 at.%.     

Effect of nickel doping on structural,optical, electrical and ethanol sensing properties of spray deposited nanostructured ZnO thin films

Undoped and nickel (Ni)-doped ZnO thin films were spray deposited on glass substrates at 523 K using 0.1 M of zinc acetate dihydrate and 0.002–0.01 M of nickel acetate tetrahydrate precursor solutions and subsequently annealed at 723 K. The effect of Ni doping in the structural, morphological, optical and electrical properties of nanostructured ZnO thin film was investigated using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV–vis Spectrophotometer and an Electrometer respectively. XRD patterns confirmed the polycrystalline nature of ZnO thin film with hexagonal wurtzite crystal structure and highly oriented along (002) plane. The crystallite size was found to be increased in the range of 15–31 nm as dopant concentration increased. The SEM image revealed the uniformly distributed compact spherical grains and denser in the case of doped ZnO thin films. All the films were highly transparent with average transmittance of 76%. The measured optical band gap was found to be varied from 3.21 to 3.09 eV. The influence of Ni doping in the room temperature ethanol sensing characteristics has also been reported.     

Electrical Properties of Gallium-Doped Zinc Oxide Films Prepared by RF Sputtering

Ga-doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering disks consisting of ZnO powder and various amounts of Ga₂O₃, to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure, and gallium content, transparent Ga-doped ZnO films with resistivity less than 10⁻³Ω·cm were obtained. Electron concentrations for undoped and Ga-doped ZnO films were on the order of 10¹⁸ and 10²¹/cm³, respectively. The Ga-doped ZnO films became degenerate when the electron concentration exceeded ∼ 10¹⁹/cm³, and the optical band gap increased with increasing carrier concentration because of the increase of Fermi energy in the conduction band.     

Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis

Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10⁻⁴ Ω cm.     

Enhanced photoelectrochemical performance of Ag–ZnO thin films synthesized by spray pyrolysis technique

Silver doped zinc oxide (Ag–ZnO) thin films were deposited on glass and tin doped indium oxide (ITO) coated glass substrates by using pneumatic spray pyrolysis technique (SPT) at 450 °C from aqueous solutions of zinc acetate and silver nitrate precursors. The effect of silver doping on structural, morphological and optical properties of films was studied. The XRD spectra of the Ag–ZnO films indicate the polycrystalline nature having hexagonal crystal structure. SEM micrographs show the uniform distribution of spherical grains of about 80–90 nm grain size for the pure ZnO thin films. The Ag nanoparticles are clearly visualized in SEM images of Ag–ZnO samples. The optical band gap energy decreases as the percentage of silver doping increases. Surface Plasmon Resonance (SPR) related phenomena are observed and correlated to the optical properties of Ag–ZnO thin films. The overall photoelectrochemical (PEC) performance of the samples was investigated and discussed. Moreover, the samples are more photoactive as compare to the pure ZnO sample and the sample ZnOAg₁₅ shows the highest current. The photocurrent increases upto 249 μA cm⁻² and 303 μA cm⁻² in visible light and in UV illumination, respectively, and then decreases as the Ag doping increases into the film.     

Effect of annealing temperature on the evolution of structural,microstructural, and optical properties of spin coated ZnO thin films

Zinc oxide (ZnO) thin films were sol-gel spin coated on glass substrates and annealed at various temperatures from 300–500 °C. Zinc acetate dihydrate (ZAD), monoethanolamine (MEA), and 2-methoxyethanol were used as the starting materials, stabilizer and solvent, respectively. The effect of annealing temperature on the structural and optical properties of the ZnO thin films was investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), UV–VIS spectrophotometry and ellipsometry. The XRD results showed the films to have a preferential c-axis orientation, whereas the AFM results confirmed a columnar structure. The surface roughness increased with the increase in annealing temperature. Parameters such as ratio of free charge carrier concentration to effective mass (N/m*) and plasma frequency (ω_p) were determined from the transmittance graph using the Wemple di Domenico model. Both N/m* and ω_p were noticed to reduce with the increase in annealing temperature. Band gap decreased with the increase in the annealing temperature indicating absorption edge shift towards the red region.     

Fabrication and Characterization of Pure and Pb-doped ZnO Thin Films Prepared by Sol–Gel and Dip-coeting Method

In this paper, undoped and Pb-doped ZnO thin films have been prepared by sol gel method and deposited on glass substrate using dip-coating technique. The structural, morphological, and optical properties of the films were investigated as a function of Pb doping. The results of the structural tests showed that these films are of a polycrystalline hexagonal structure with a preferred orientation in the (002) direction. The grain size values of Pb-doped films were lower than that of pure ZnO, but the strain and the dislocation density values inecrease with increase Pb doping ratio. The atomic force microscopy (AFM) images showed that the particle size and Root Mean Square (RMS) of ZnO decrease with increasing Pb doping. The optical band gap values were found to increase from (3.19 to 3.30 eV) and the Urbach energy decrease from (322 to 313 meV). PL spectra exhibit an increased amount of defects with increasing Pb, which leads to a red shift in the UV region.

     

Preparation and characteristics of ZnO films on freestanding diamond substrates

In this paper, preferred and fine grained polycrystalline ZnO films were deposited on smooth nucleation surfaces of freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapor deposition. The properties of the ZnO films were characterized by scanning electron microscopy, X-ray diffraction, glancing angle X-ray diffraction, room temperature photoluminescence spectra, and electron probe microanalysis. The results indicate that the morphological, structural, and optical properties of ZnO films are strongly dependent on the deposition procedures, especially the deposition temperature. The Zn/O atomic ratio plays an important role in the optical properties of ZnO films. The experimental results can help us improve our understanding of how to obtain ZnO films with excellent properties deposited on FTDF. The most significant improvements in morphological, structural, and optical properties of ZnO films are obtained by using the proper deposition temperature of 500 °C.     

Influence of yttrium doping on the structural,morphological and optical properties of nanostructured ZnO thin films grown by spray pyrolysis

This study reports on the deposition of highly transparent, n-type ZnO thin films on glass substrate at 450?°C using spray pyrolysis processing, with the simultaneous insertion of yttrium (Y) at different percentages (0, 2, 5, 7?at%) as a dopant. The effect of Y doping on the structure, morphology and optical properties of Y doped ZnO (ZnO:Y) was investigated for optoelectronic applications. The obtained thin films were characterized by means of X-ray diffraction, field-emission scanning electron microscopy (FESEM), UV–visible absorbance measurements, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. The as-prepared films exhibit well-defined hexagonal wurtzite structure grown along [002]. Field emission scanning electron microscope micrographs of the pure ZnO and ZnO:Y showed that the films acquired a dominance of hexagonal-like grains, the morphology was influenced by Y incorporation. All the films showed high transparency in the visible domain with an average transmittance of 83%. The band gap energy, E_g, increased from 3.12?eV to 3.18?eV by increasing the Y doping concentration up to 5?at% and then decreased to 3.15?eV for 7?at% Y content. The PL and CL measurements reveal a strong ultraviolet (UV) emission, suggesting that the as-prepared ZnO:Y thin films can potentially be used in optoelectronic devices.