真空管道自体溅射镀TiN膜研究

本文详细介绍了长真空管道内表面直流溅射镀TiN膜技术和成膜系统配置。采用真空管道自体真空镀膜方法解决细长管道内表面镀膜问题，特殊的阴极靶结构设计成功地解决了长管道内表面直流溅射镀膜的问题。本实验方法在真空管道内壁获得了均匀的、高品质的TiN膜层，并实现了细长真空管道大面积镀膜过程的稳定性、重复性和一致性。真空管道自体直流溅射镀膜实验中采用的工作原理以及设备简单，操作方便，成本低廉。     

ITO玻璃在线等离子体清洗的研究

通过在线等离子体清洗的玻璃基片表面沉积的ITO（或SiO2)膜，不仅具有优良的光电特性，而且提高了膜层在基片上的附着力。与未经在线等离子体清洗的基片沉积的ITO膜相比，膜层附着力提高了3．5倍。此项成果已在ITO膜透明导电玻璃连续生产线上得到应用。     

ITO玻璃在线等离子体清洗的研究

通过在线等离子体清洗的玻璃基片表面沉积的ITO(或SiO2)膜,不仅具有优良的光电特性,而且提高了膜层在基片上的附着力.与未经在线等离子体清洗的基片沉积的ITO膜相比,膜层附着力提高了3.5倍.此项成果已在ITO膜透明导电玻璃连续生产线上得到应用.     

低温沉积ITO透明导电膜的研究

通过探讨半导体氧化物ITO膜的透光和导电机理,用反应性直流磁控溅射的镀膜工艺,在有机玻璃上低温镀制(ITO)膜,研究ITO膜溅射工艺参数与透光和导电性能的关系,实现了在低温下镀制(ITO)膜的技术,其透光率≥80%以上,表面电阻≤30Ω/□.     

射频磁控溅射制备SiO_2膜

利用石英靶射频磁控溅射制备SiO2膜的工艺，采用L型阻抗匹配网络，并计算得到了等离子体的等效电容及等效电导。指出射频功率密度是最重要的沉积参数，靶面自偏压及SiO2膜沉积速率均随功率密度的增加而线性增加。溅射气压及氧分压对自偏压的影响较小，但两者的增加将导致SiO2沉积速率的降低。制备了可见光区透光性良好，折射率为1．46，沉积速率为35nm／min的SiO2膜。     

磁控溅射Ti—N膜沉积的空间分布研究

磁控溅射镀膜设备可以广泛用于镀膜Ｔｉ－Ｎ膜，从实用观点看，磁控溅射工艺中的溅射速率的溅射原子空间分布是广泛关心的，沉积在试样表面的溅射原子被认为除了与等离子体的参数有关，还与靶－工件的几何分布有关系。本文研究了真空室中Ｔｉ－Ｎ膜沉积的空间分。在研究中发值得注意的是溅射量与沉积量作为两个不同的概念严格区分。     

6328全反射介质膜真空镀膜工艺探讨

阐述了6328 全反射介质膜的镀膜原理和实际镀膜工艺,分析了镀膜后必须进行固膜的原因,并给出了镀制6328 全反射介质膜的蒸镀参数和经过固膜后的测量结果分析。     

6328Å全反射介质膜真空镀膜工艺探讨

阐述了6328(A)全反射介质膜的镀膜原理和实际镀膜工艺,分析了镀膜后必须进行固膜的原因,并给出了镀制6328全反射介质膜的蒸镀参数和经过固膜后的测量结果分析.     

6328(A)全反射介质膜真空镀膜工艺探讨

阐述了6328(A)全反射介质膜的镀膜原理和实际镀膜工艺,分析了镀膜后必须进行固膜的原因,并给出了镀制6328全反射介质膜的蒸镀参数和经过固膜后的测量结果分析.     

基于LabWindows/CVI在线膜厚控制仪软件设计

为实现复杂光学膜层的连续稳定镀制,提高生产效率,减少废品损失,利用Labwindows CVI 8.0软件和NI DAQmx 8.0函数支持库开发膜厚自动监控软件,结合数据采集和控制扩展卡,在工控制机内完成数据的采集、分析、计算、存储和显示,构成在线膜厚控制仪主体,控制镀膜机主机及其附属设备,在线实时监控镀膜工艺过程,使实际膜系曲线和理论设计曲线拟合,构成镀膜工艺的在线监控和自动化控制。     

中频双靶反应磁控溅射制备TiO2膜的一些探索

具有高折射率的TiO2膜在反射型液晶显示器的关键部件高反射率背板膜系的制备中起重要作用，本文使用国内首家在线中频双靶反应磁控溅射设备进行了制备TiO2膜的探索，完成了相应的膜层测试与分析。实验结果表明双靶磁控反射溅射可以制备高折射率的TiO2膜，实验还从折射率的角度证明中频双靶反应溅射与直流反应溅射的效果一致,为进一步提高膜层沉积速率以适应工业生产需求需要引入更有效的溅射过程控制手段。     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

硅靶中频反应磁控溅射二氧化硅薄膜的特性研究

报道了中频双靶反应磁控溅射制备二氧化硅（SiO2)薄膜的装置、工艺及薄膜特性。对制备的SiO2薄膜的化学配比和元素化学态进行了SAM和XPS分析，测试了膜层对钠离子（Na^ )阻挡性能、光学折射率和可见光的透过率。研究表明作者开发的中频双靶反应磁控溅射沉积SiO2薄膜的设备和工艺可以高速率、大面积制备高质量的SiO2膜。     

基片温度对磁控溅射沉积二氧化硅的影响

本文详细地研究了基片温度对磁控溅射沉积二氧化硅的影响,随着基片温度的增加,溅射沉积速率下降明显,薄膜的折射率也出现上升趋势,薄膜也由低温时的疏松粗糙发展为致密光滑.250℃时的溅射沉积速率仅为室温时的1/3,由此,针对间歇式在大面积玻璃上沉积二氧化硅薄膜,我们采取了沉积完ITO薄膜后,先快速降温,再沉积二氧化硅的工艺.     

Influence of manufacturing process of indium tin oxide sputtering targets on sputtering behavior

Thin films of In₂O₃+SnO₂ (indium tin oxide or ITO) have wide utility because they are electrically conductive and transparent at visible wavelengths. A preferred method for making highest quality ITO coatings is reactive sputtering from targets of mixed indium and tin oxides. The resulting film properties are highly dependent upon the deposition conditions, and upon post-deposition film treatments. Film data and sputtering efficiency are also effected by sputtering target characteristics.

This study evaluated the influence of the targets on the electrical resistivity of deposited ITO films, and the effect of target properties on the sputtering rate. A matrix of 12 targets was tested; all had composition 90 wt.%In₂O₃+10 wt.%SnO₂. The effects of varying target density, degree of target oxide reduction from complete stoichiometry, and target purity were measured.

The results are, in summary, (1) partial reduction of oxide targets from complete stoichiometry does not influence film resistivity, (2) the data indicate a small (perhaps negligible) dependence of film resistivity upon target density, (3) higher target density tends to promote enhanced deposition rate, and (4) purposeful addition of silicon, aluminum, magnesium, calcium, and sodium at high levels to ITO targets degrades film resistivity depending upon the total concentration of impurities added, but independently of the contaminating species.     

反应溅射制备SiO2膜的问题及进展

磁控射法制备ＳｉＯ２膜传统上采用射频溅射工艺,但它成本较高,效率较低,无法充分满足大面积镀膜工业生产的需求。近年来,反应磁控溅射在解决异常弧光放电和阳极消失等问题方面取得了很大的进展,已成功地应用于包括ＳｉＯ２在内的绝缘膜沉积,成为镀制介质膜的一个新方向。本文介绍和评述了反应溅射所遇到的几个关键问题,结合机理讨论了相应的解决办法,并认为反应溅射有重要实用价值和发展前景。     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高     

High-rate deposition of high-quality Sn-doped In2O3 films by reactive magnetron sputtering using alloy targets

Sn-doped In₂O₃ (ITO) films were deposited on heated (200 °C) fused silica glass substrates by reactive DC sputtering with mid-frequency pulsing (50 kHz) and a plasma control unit combined with a feedback system of the optical emission intensity for the atomic O* line at 777 nm. A planar In-Sn alloy target was connected to the switching unit, which was operated in the unipolar pulse mode. The power density on the target was maintained at 4.4 W cm^− 2 during deposition. The feedback system precisely controlled the oxidation of the target surface in “the transition region.” The ITO film with lowest resistivity (3.1 × 10^− 4 Ω cm) was obtained with a deposition rate of 310 nm min^− 1 and transmittance in the visible region of approximately 80%. The deposition rate was about 6 times higher than that of ITO films deposited by conventional sputtering using an oxide target.     

Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering

Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In₂O₃ (90 wt.%):SnO₂ (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 × 10^− 4 Ωcm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests.     

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.