低能电子辐照对环氧树脂性能的影响

为了研究低能电子辐照对环氧树脂的体积电阻率、邵氏硬度、拉伸强度和官能团结构的影响,本文在电子辐照能量为30 keV,注量率1×10~(11) cm~(-2)·s~(-1),总注量为1.6×10~(14) cm~(-2),真空度10~(-6) Pa条件下,结合国家标准对辐照前、后环氧树脂材料的机械性能和结构进行表征。结果表明,辐照后环氧树脂材料的体积电阻率、邵氏硬度、拉伸强度等宏观物理性能均有下降。傅里叶红外光谱图显示环氧树脂主要官能团强度降低,产生的·H、·OH等自由基与聚合物分子上的羟基与氢结合。研究结果对环氧树脂材料在辐射环境中的使用具有重要意义。     

堆内超临界水回路辐照装置物理参数模拟研究

堆内超临界水回路对我国超临界水堆燃料和结构材料的辐照腐蚀实验具有重要意义,辐照装置位于反应堆堆芯栅格,是超临界水回路的核心部件。采用MCNP程序模拟研究辐照装置的关键物理参数,并考虑超临界水热物特性对物理参数的反馈效应。计算得到辐照装置热中子注量率为4.72×10¹³ cm^-2•s^-1,快中子注量率为1.55×10¹⁴ cm^-2•s^-1,辐照产热率为14.7 kW,反应性引入为0.045%。     

硅三极管电子辐照的残余电压效应

研究了双极型晶体管（BJT）高能电子（1。5 MeV）辐照的总注量效应,电子辐照的总注量为5×10¹³～1.2×10¹⁶ cm^-2。实验结果表明,三极管经电子辐照后,有残余电压产生,残余电压随电子总注量的增加而增大。认为是由于辐照后产生的缺陷能级导致的去载流子效应使得BC结自建电势差变化量大于BE结,以及缺陷能级使BC结导带差变化量大于BE结这两方面原因引起的。     

用于n/γ混合场测量的涂硼电离室研制

研制了一种能同时测量混合场中γ和中子注量率的涂硼电离室,并实验测试了其性能。涂硼电离室由两个大小和结构一致的腔室组成：1个仅对γ灵敏,另1个对γ与中子均灵敏。用强度为2.7×10⁷ s^-1 的Am-Be源测得电离室的中子灵敏度达9.2×10^-16 A/(cm^-2•s^-1),在剂量率为5.24 μGy/h的¹³⁷Cs γ场中,电离室的γ灵敏度达7.36×10^-16 A/(MeV•cm^-2•s^-1)。涂硼电离室I-V曲线坪长为600 V,坪斜小于4%/100 V,在工作电压为-400 V时,其γ补偿修正系数<5%,可用于核设施周围的混合场监测。     

位移损伤效应对AlGaN/GaN HEMT器件的影响

对AlGaN/GaN高电子迁移率晶体管(HEMT)分别进行3 MeV质子辐照和14 MeV中子辐照实验。3 MeV质子辐照下累积注量达到1×10¹⁵ cm^-2或14 MeV中子辐照下累积注量达到2×10¹³ cm^-2时，AlGaN/GaN HEMTs饱和漏电流下降，阈值电压正向漂移，峰值跨导降低。分别对3 MeV质子辐照和14 MeV中子辐照后的AlGaN/GaN HEMTs进行深能级瞬态谱(DLTS)测试。3 MeV质子辐照后缺陷浓度下降降低了反向栅极漏电流，而14 MeV中子辐照会导致缺陷浓度增加，使得反向栅极漏电流增加。根据质子和中子辐照后的缺陷能级均为(0.850±0.020) eV,推断缺陷类型均为氮间隙缺陷，质子辐照和中子辐照后氮间隙缺陷的位移导致的位移损伤效应是AlGaN/GaN HEMT器件电学性能退化的主要原因。     

放射性核素电离空气电子离子对产生率计算

α衰变核素和β衰变核素发射的射线具有电离空气能力而被广泛应用于工业生产中。为研究α或β衰变核素对空气电离能力的大小,本研究采用蒙特卡洛方法模拟理想放射源发出带电粒子在空气中的能量沉积,并结合空气电离理论,计算放射源表面不同距离处电子离子对产生率。利用此计算方法,研究放射源形状、粒子能量、活度和粒子能量分布对电子离子对产生率的影响。结果表明,放射源表面空气中电子离子对产生率的大小主要受放射源活度的影响,而粒子能量及能谱分布等主要影响电离空气范围及电子离子对产生率衰减速率; 3.7×10⁶ Bq/cm²的α放射源最大电子离子对产生率可达10¹¹~10¹² cm^-3•s^-1量级, 3.7×10⁶ Bq/cm²的β放射源最大电子离子对产生率可达10⁹~10¹⁰ cm^-3•s^-1量级。研究结果可提供数据支持,为新的放射性同位素应用技术开发提供理论指导。     

150 keV质子辐照对GaAs子电池性能的影响

低能质子辐射会使电池产生较大的非电离能量损失，导致少数载流子寿命降低从而破坏GaInP/GaAs/Ge电池的电性能，其中尤以中间的GaAs子电池的衰减最严重。本文以卫星用主流GaInP/GaAs/Ge三结电池为研究对象，制备与三结电池中GaAs子电池相同尺寸结构和工艺的单结GaAs电池，以150 keV质子辐照后对其性能进行测试。测试结果表明，150 keV质子辐照后电池的量子效率衰减，且基区衰减最严重。光致发光测试结果显示，在3×10¹⁰、1×10¹¹、5×10¹¹ cm^-2辐照注量下，非辐射复合少数载流子寿命分别为2.22、0.67、0.13 ns。基于上述结果，利用多物理场仿真软件COMSOL建立了GaAs的物理模型，对GaAs子电池衰减进行仿真，将实验结果与模拟结果进行对比，两者电学参数的最大相对偏差为7%。仿真结果表明：中国空间站中电池的辐射衰减主要源于内辐射带中的质子，空间站轨道太阳能电池运行5 a，在太阳活动极大时，最大功率衰减约为7.6%，太阳活动极小时，最大功率衰减约为13.7%。     

GaInP/GaAs/Ge三结太阳电池100MeV质子位移辐照损伤效应实验研究

GaInP/GaAs/Ge三结太阳电池是当前航天器空间电源系统的核心元器件,其在空间辐射环境中遭受的辐照损伤会导致太阳电池性能参数衰降,甚至导致航天器供电系统功能失效。为获取GaInP/GaAs/Ge三结太阳电池高能质子辐照损伤退化规律,以国产GaInP/GaAs/Ge三结太阳电池为研究对象,通过开展100 MeV质子不同注量下的辐照实验,分析质子位移损伤诱发GaInP/GaAs/Ge三结太阳电池的开路电压(V_oc)、短路电流(I_sc)、最大输出功率(P_m)、光电转换效率(E_ff)等辐射敏感参数的退化规律和损伤机理。结果表明：注量范围为1×10¹¹～2×10¹² cm^-2时,V_oc、I_sc、P_m、E_ff的退化程度随辐照注量的增加而增大,当注量为2×10¹² cm^-2时,P_m和E     

重水研究堆热柱石墨潜能释放分析研究

重水研究堆堆内石墨构件在长期中子辐照下将会累积潜能，为确保重水研究堆堆内石墨构件安全退役及处理处置，本文采用差示扫描量热仪对重水研究堆3个不同位置所取热柱石墨样品进行了潜能测量，扫描温度范围为10～550 ℃、升温速率为10 ℃/min。结果表明：3个位置的样品在80～500 ℃温度积分区间内潜能释放量分别为70.690、42.167、18.158 J/g；潜能释放率曲线峰值温度均大于300 ℃，未辐照石墨样品的比热容较热柱石墨样品释放率dS/dT（S为潜能释放量（J/g），T为温度（℃））高，表明本实验所取石墨样品不会发生潜能释放导致石墨自身温度上升的情况；3个位置样品的快中子注量分别为6.75×10¹⁶、6.10×10¹⁴、1.89×10⁷ cm^-2；获得了潜能释放分数曲线与潜能释放速率曲线，1#和2#位置样品的潜能释放速率曲线具有至少2个释放峰，表明潜能释放过程中具有至少2个动力学过程。     

利用HFETR制备有载体177Lu

¹⁷⁷Lu是一种优良的诊疗一体化医用放射性核素,其标记的放射性药物被广泛用于多种癌症的诊断和治疗。其中,有载体¹⁷⁷Lu的制备具有放射化学处理简单、¹⁷⁷Lu产量高等优点。为此,在高通量工程试验堆(HFETR)中利用热中子辐照¹⁷⁶Lu,开展有载体¹⁷⁷Lu的制备研究。本研究分别辐照天然Lu和富集¹⁷⁶Lu进行热实验验证,结果表明：天然Lu在2×10¹⁴ n·cm^-2·s^-1热中子通量下辐照13 d,生成¹⁷⁷Lu比活度约为0.87 Ci/mg,^177mLu杂质含量为0.009%;富集(86.5%)¹⁷⁶Lu在热中子注量率为1×10¹⁴ n·cm^-2·s^-1条件下辐照28 d,生成¹⁷⁷Lu比活度约为24.9 Ci/mg,^177m...     

Effects of fast neutron radiation on polypropylene

Capacitor-grade polypropylene films were irradiated in a 2-MW thermal nuclear reactor and exposed to fast neutron radiation at a flux rate of 2.6×10¹² neutron/cm² s and gamma radiation at a level of 10⁷ rad/h. The postirradiation effects on changes in the electrical and chemical properties of the films were studied for irradiation times up to 10 h. The electrical properties were DC and AC breakdown voltages, life under pulsed voltage stress, dielectric permittivity, dielectric losses, and volume resistivity. Chemical analysis was performed using the infrared spectroscopy technique. Small changes were detected in the dielectric strength, dielectric properties, and volume resistivity of the film. These changes are believed to be caused by oxidation of the polypropylene film, as was evidenced by the infrared spectra showing an increase in the carbonyl absorption peak at 1720 cm^-1     

利用测热技术测量核反应堆中子通量密度

一种新型中子探测器被研究,其原理是利用带电离子在矿物中沉积的能量退火时会以热量的方式释放出来,通过测量释放的热量而确定中子通量密度。对新型中子探测器进行刻度,在反应堆内某位置测量的热中子通量密度为5.108×10¹¹ cm^-2•s^-1,与标定的热中子通量密度(5.000×10¹¹ cm^-2•s^-1)在2%内符合,说明该探测器可测量中子通量密度。本文方法制作的探测器体积小,可制作成不同形状,便于反应堆不同环境下的中子通量密度测量。选取相应中子能量反应截面较大的元素,该探测器还可测量不同中子能量的通量密度。     

Neutron-induced radiation damage in silicon detectors

Ion-implanted silicon pad detectors fabricated on different n-type and p-type silicon wafers with initial resistivities between 2.6 and 12.9 kΩcm were irradiated with neutrons of ~1 MeV energy, up to a fluence of 5×10¹³ n cm^-2. The evolution of diode leakage current and capacitance characteristics is presented as a function of the neutron fluence. The reverse diode current increases proportionally to the neutron fluence. There is evidence that the doping of the initial n-type material evolves towards intrinsic and inverts to an apparent p-type at fluences between 1×10¹³ and 3×10¹³ n cm^-2, depending on the initial silicon resistivity. There is also evidence that p-type material remains of the same conduction type with a slight increase of the acceptor doping with fluence. The signal shape and the charge collection efficiency for incident β particles were measured     

Preparation of High Specific Activity Strontium-89 Solution in High Flux Engineering Test Reactor

⁸⁹SrCl₂ is an important radioactive drug for the bone metastasis. It is included in the new pharmacopoeia in 2015 and has a promising future in the market. Depending on the high flux engineering test reactor(HFETR), the process of preparation of high specific activity⁸⁹SrCl₂ solution by nuclear reaction ⁸⁸Sr(n, γ)⁸⁹Sr was studied. High purity enriched⁸⁸SrCO₃ was used as target material and irradiated for 56 days under the condition of thermal neutron fluence rate about 2×10¹⁴ n•cm^-2•s^-1. After dissolution and filtration, the colorless⁸⁹SrCl2 solution was obtained. The specific activity of⁸⁹SrCl₂ solution was 7.77×10⁹-1.08×10¹⁰ Bq•g^-1, the activity concentration was 3.59×10⁸-1.21×10⁹ Bq•mL^-1, the gamma impurity content was 0.11%-0.14%, the Al impurity content was much lower than 2 μg•mL^-1(activity concentration 7.4×10⁷ Bq• mL^-1).⁸⁹SrCl₂ solution had been tested to meet the requirements of the industry and could be used as raw material for the production of injection. The development of single 7.4×10¹⁰ Bq level preparation device of high purity and high specific activity of ⁸⁹Sr had been finished. This research is important for localization of isotope products.     

Well-type phoswich counter for low-flux X-ray/γ-ray detection

Phoswich counters that can detect low-flux hard-X-ray/γ-ray from localized sources are described. The counter consists of a small inorganic scintillator with a fast decay time (the detection part) glued to the interior bottom surface of a well-shaped block of another inorganic scintillator with a slow decay time (the shielding part). The first model counter was built by using a new scintillator, gadolinium silicate (GSO), in the decision part and CsI(Tl) in the shielding part. A detector system consisting of 64 such phoswich counters (total area ~740 cm²) was flown onboard a balloon, setting a limit to the ⁵⁷Co line flux from SN 1987A, at ~10^-4 cm^-2 s The sensitivity for continuum flux was around a few ×10 ^-6 cm^-2 s^-1 keV^-1 between 100 and 200 keV. In the second model, CsI(Tl) was replaced by bismuth germanate (BGO), and radioactive contaminations in GSO were reduced. Improvements are planned to reach a sensitivity (3σ) around 5×10^-7 cm^-1 s^-1 keV^-1 for the continuum     

电子辐照条件下高纯铁中位错环演化的多尺度模拟

辐照诱导材料微观结构演化导致的材料力学性能降级或尺寸不稳定性是限制反应堆安全与经济性的关键因素之一。本文基于速率理论建立了辐照诱导材料微观结构演化的物理模型,并开发了模拟程序Radieff。采用分子动力学计算了高纯铁中缺陷的形成能、结合能、迁移能以及间隙原子位错环的构型,在此基础上模拟了电子辐照诱导高纯铁内位错环的演化过程,并与实验结果进行了对比。基于分子动力学的计算结果表明,当间隙原子团簇包含3个间隙原子时,团簇的排列方式为〈110〉构型,间隙原子团簇包含4个以上间隙原子时,团簇排列方式变为〈111〉构型。此外基于Radieff研究了400~600K温度范围内,损伤速率为1.5×10-4 dpa/s电子辐照条件下,位错密度对位错环演化的影响,位错密度对位错环数密度及其平均尺寸的影响取决于位错以及间隙原子团簇对间隙原子的阱强度;在464K和550K温度下辐照,位错环数密度及其平均尺寸分别在位错密度增加到1011 cm-2和1010 cm-2后急剧减小,这是由于此时位错对间隙原子的阱强度会大于间隙原子团簇对间隙原子的阱强度。