烧结温度对CFO/PMN-PT磁电复合陶瓷性能的影响

采用传统固相法制备了质量比为1∶4的CoFe2O4/Pb(Mg1/3Nb2/3)O3-0.35PbTiO3(CFO/PMN-PT)磁电复合陶瓷,研究了烧结温度(900～1100℃)对所制复合陶瓷性能的影响。结果表明,复合陶瓷中尖晶石结构的CFO与钙钛矿结构的PMN-PT共存,没有其他杂相生成,复合陶瓷的密度以及压电常数d33在1000℃时达到最大值,分别为7.07g/cm3和212pC/N。磁电电压系数αE33随烧结温度的增加逐渐增大,在1100℃烧结时达到最大值8.4mV/A,而磁电电压系数αE31随烧结温度的增加先增大后减小,在1000℃烧结时达到最大值4.8mV/A。     

弛豫型铁电陶瓷(1-x)Pb(Sc1/2Ta1/2)O3-xPbTiO3研究进展

钽钪酸铅陶瓷具有优良的介电、压电和铁电性能,但烧成温度高、居里点较低。为降低钽钪酸铅陶瓷的烧结温度并提高其居里点,人们合成了钽钪酸铅-钛酸铅(简称PSTT)材料体系。该文综述了弛豫型铁电陶瓷PSTT体系在相图与结构、制备和性能等方面的研究进展,探索了一种合成PSTT陶瓷新工艺,介绍了PSTT材料体系的重要应用领域。     

弛豫型铁电陶瓷（1-x）Pb（Scl／2Tal／2）O3-xPbTiO3研究进展

钽钪酸铅陶瓷具有优良的介电、压电和铁电性能，但烧成温度高、居里点较低。为降低钽钪酸铅陶瓷的烧结温度并提高其居里点，人们合成了钽钪酸铅-钛酸铅(简称PSTT)材料体系。该文综述了弛豫型铁电陶瓷PSTT体系在相图与结构、制备和性能等方面的研究进展，探索了一种合成PSTT陶瓷新工艺，介绍了PSTT材料体系的重要应用领域。     

低温烧结的PZT-BF-BCW系压电陶瓷

通过对锆钛酸铅(PZT)-铁酸铋(BF)-钨铜酸钡(BCW)系压电陶瓷的低温烧结特性及组成对烧结温度、性能的影响的研究,获得了烧结温度低(935℃,0.5 h)且性能优良的配方:0.92PZT·0.05BF·0.03BCW+0.08wt％CuO,其K_p为47％,Q_m为950,ε_(33)~T/ε_0为850。并应用XRD、SEM和DTA等手段探讨了该系统瓷体的相组成和低温烧结机理。     

成型工艺对PMN—PMS—PZT热释电陶瓷性能的影响

采用干压、冷等静压和凝胶注模等不同成型工艺制备铌锰酸铅-锑锰酸铅-锆钛酸铅(PMN-PMS-PZT)陶瓷,并进行对比研究.实验结果表明,冷等静压成型的陶瓷综合性能较好,其具有均匀紧凑的晶粒结构,可得到较高的成瓷密度;使材料的介电常数εr和介电损耗tan δ降低,在保持较高热释电系数P的同时降低低温铁电三方相-高温铁电三方相(FRL-FRH)的相变温度,并使热释电系数峰值得到稳定.其最佳性能为室温时,εr=216,tan δ=0.20%,p=12.0×10-4 C/m2·℃(持续温区为23～55℃),探测率优值FD=24.6×10-5Pa-1/2.     

烧结温度对CeO_2掺杂KNN基陶瓷性能的影响

采用传统固相反应法制备了掺杂CeO_2的0.97(K_(0.5)Na_(0.5))NbO_3-0.03Bi(Zn_(2/3)Nb_(1/3))O3-1.0%CeO_2(0.97KNN-0.03BZN-1.0CeO_2)无铅铁电陶瓷,研究了不同烧结温度(1 120℃、1 130℃、1 140℃)对陶瓷样品相组成、显微结构及介电、铁电性能的影响。研究结果表明,随烧结温度的升高,0.97KNN-0.03BZN-1.0CeO_2陶瓷的致密度得到提高;陶瓷样品为纯钙钛矿结构;1 130℃烧结的0.97KNN-0.03BZN-1.0CeO_2陶瓷样品表现出显著的弛豫特性,介电损耗低于3%;升高烧结温度能有效减小0.97KNN-0.03BZN-1.0CeO_2陶瓷的漏电流。     

烧结工艺参数对KNN基陶瓷性能的影响

采用传统固相烧结法制备了CeO_2掺杂的0.97(K_(0.5)Na_(0.5))NbO_3-0.03Bi(Zn_(2/3)Nb_(1/3))O_3-1.0%CeO_2(0.97KNN-0.03BZN-1.0CeO_2,摩尔分数)无铅铁电陶瓷。研究了1 130℃烧结温度下,不同保温时间(1h、2h、4h)和升温速率(2℃/min、5℃/min)对陶瓷样品相组成、显微结构及介电和铁电性能的影响。研究发现,当烧结条件为1 130℃,保温4h,升温速率2℃/min时,0.97KNN-0.03BZN-1.0CeO_2陶瓷试样较致密,表现出较优异的介电、铁电性能,介电常数为1 418(100kHz),介电损耗低于2%,并表现出弛豫铁电体特性。     

铁电/铁磁复合材料的介电、铁电性能研究

采用传统的固相烧结工艺制备了铁电/铁磁复合材料,组分为(1-x)NiFe_2O_4+xPbZr_(0.52)Ti_(0.48)O_3(其中x=0.5,0.6,0.7,0.8).利用XRD和背散射电子像分析了复合材料的相成分,结果表明,复合材料由铁电相和铁磁相组成,无杂相生成.通过测量电阻率及压电性能得出复合材料的最佳烧结温度约为1 220 ℃.介电温谱研究表明,相变温度约为390 ℃,且不随频率变化,是铁电到顺电的相变.电滞回线呈束腰特征,剩余极化强度较小,随铁电体含量的增加剩余极化强度增大,铁电性加强.     

硝酸锰对PMN-PZT热释电陶瓷性能的影响

研究了硝酸锰溶液掺杂对富锆铌镁酸铅-锆钛酸铅(PMN-PZT)热释电陶瓷材料的相组成、微观结构、介电性能、热释电性能等方面的影响,并对实验结果作出物理机理的解释。实验结果表明,以液态硝酸锰的形式进行锰掺杂使锰的加入更容易,有效改善了固态锰掺杂时析出损失和混合不均等问题;适量的硝酸锰溶液掺杂有助于陶瓷晶粒的生长,能有效地降低PMN-PZT陶瓷材料的相对介电常数(rε)和介电损耗(tanδ),并增加其热释电系数(p);在x(Mn)=3.0%时,制备出综合热释电性能良好的PMN-PZT热释电陶瓷,即室温时rε=197,tanδ=0.15%,p=3.5×10-8C/cm2℃,探测优值FD=8.7×10-5Pa-1/2,低温铁电相-高温铁电相(FRL-FRH)相变温度时rε=300,tanδ=0.45%,pmax=35×10-8C/cm2℃,FD=40.5×10-5Pa-1/2,符合制作热释电红外探测器的要求。     

PMMN-PZT四元系压电陶瓷材料的研究

研究了铌镁酸铅铌锰酸铅锆钛酸铅(PMMN-PZT)四元系统压电陶瓷材料的配方、工艺条件及对各项性能指标的影响。在相界附近研究了四种不同配方的PMMN-PZT压电陶瓷,通过SEM观察、性能测试、居里温度表征等手段,确定了较佳的配方组成、材料的烧结温度及极化制度。研究表明:所得PMMN-PZT压电陶瓷的较佳组成为0.06Pb(Mg1/3Nb2/3)O3-0.06Pb(Mn1/3Nb2/3)O3-0.44PbZrO3-0.44PbTiO3+0.2%质量分数的CeO2,适宜的烧结温度为1200,极化电场为3000V/mm,极化温度为150。所制备的压电陶瓷的相对介电常数33T/0为1100;介质损耗tg为0.004;压电常数d33为290?0-12C/N,g33为28.0?0-3Vm/N;机电耦合系数kP为0.55;机械品质因数Qm为1200。     

体声波磁电天线辐射性能的解析计算

针对国内外对体声波磁电天线原理的解析计算与设计方法的研究还不成熟,以及现有解析计算方法存在误差的问题,提出了一套相对精确的体声波磁电天线的解析计算方法。利用该解析计算法分别计算了磁电天线中压电层和磁致伸缩层的势能,并求出磁电天线的总势能。由于磁电天线的辐射功率是由磁致伸缩层表面的孔径电场决定,故利用本构方程将孔径电场替换为正弦分布的应力场,对磁电天线的平均辐射功率进行了求解,进而得到归一化的天线辐射品质因数。通过对不同层数结构磁电天线的归一化后势能、平均辐射功率和辐射品质因数等性能参数的比较分析,得到了优选的"压电层-磁致伸缩层-压电层"三层交替堆叠结构,实现了磁电天线辐射性能的最优化多层设计。     

E‐Field Control of Exchange Bias and Deterministic Magnetization Switching in AFM/FM/FE Multiferroic Heterostructures

The coexistence of electrical polarization and magnetization in multiferroic materials provides great opportunities for novel information storage systems. In particular, magnetoelectric (ME) effect can be realized in multi­ferroic composites consisting of both ferromagnetic and ferroelectric phases through a strain mediated interaction, which offers the possibility of electric field (E‐field) manipulation of magnetic properties or vice versa, and enables novel multiferroic devices such as magnetoelectric random access memories (MERAMs). These MERAMs combine the advantages of FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), which are non‐volatile magnetic bits switchable by electric field (E‐field). However, it has been challenging to realize 180° deterministic switching of magnetization by E‐field, on which most magnetic memories are based. Here we show E‐field modulating exchange bias and for the first time realization of near 180° dynamic magnetization switching at room temperature in novel AFM (antiferromagnetic)/FM (ferromagnetic)/FE (ferroelectric) multiferroic heterostructures of FeMn/Ni₈₀Fe₂₀/FeGaB/PZN‐PT (lead zinc niobate–lead titanate). Through competition between the E‐field induced uniaxial anisotropy and unidirectional anisotropy, large E‐field‐induced exchange bias field‐shift up to $ {{{\Delta H_{ex}}}\over{{H_{ex}}}} = 218\%$ and near 180° deterministic magnetization switching were demonstrated in the exchange‐coupled multiferroic system of FeMn/Ni₈₀Fe₂₀/FeGaB/PZN‐PT. This E‐field tunable exchange bias and near 180° deterministic magnetization switching at room temperature in AFM/FM/FE multiferroic heterostructures paves a new way for MERAMs and other memory technologies.     

The Origin of Magnetism in Mn‐Doped SrTiO3

An analysis of Mn substitution in SrTiO₃ is performed in order to understand the origin of reported spin coupling in lightly Mn‐doped SrTiO₃. The spin glass state magnetoelectrically coupled to the dipolar glass state has previously been reported for SrTiO₃ substituted with only 2% of Mn on the B‐site. An analysis of the substitution mechanism for A‐ and B‐site doping shows a strong influence of processing conditions, such as processing temperature, oxygen partial pressure, and off‐stoichiometry. The required conditions for a site‐selective substitution are defined, which yield a single‐phase and almost defect‐free perovskite. Magnetic measurements show no magnetic anomalies resulting from spin coupling and only a simple paramagnetic behavior. Magnetic anomalies are observed only for the samples in which Mn is misplaced within the cation sublattice of the SrTiO₃ perovskite. This occurs due to improper material processing, which causes initially unpredicted changes in the valence state of the Mn and results in the formation of structural defects and irregularities associated with segregation and nucleation of the magnetic species. Previously reported spin coupling in Mn‐doped SrTiO₃ is not an intrinsic phenomenon and cannot be treated as a spin glass.     

Room‐Temperature Nonvolatile Memory Based on a Single‐Phase Multiferroic Hexaferrite

The cross‐coupling between electric polarization and magnetization in multiferroic materials provides a great potential for creating next‐generation memory devices. Current studies on magnetoelectric (ME) applications mainly focus on ferromagnetic/ferroelectric heterostructures because single‐phase multiferroics with strong magnetoelectric coupling at room temperature are still very rare. Here a type of nonvolatile memory device is presented solely based on a single‐phase multiferroic hexaferrite Sr₃Co₂Fe₂₄O₄₁ which exhibits nonlinear magnetoelectric effects at room temperature. The principle is to store binary information by employing the states (magnitude and sign) of the first‐order and the second‐order magnetoelectric coefficients (α and β), instead of using magnetization, electric polarization, and resistance. The experiments demonstrate repeatable nonvolatile switch of α and β by applying pulsed electric fields at room temperature, respectively. Such kind of memory device using single‐phase multiferroics paves a pathway toward practical applications of spin‐driven multiferroics.     

Polymer‐Based Magnetoelectric Materials

Polymer‐based magnetoelectric (ME) materials are an interesting, challenging and innovative research field, that will bridge the gap between fundamental research and applications in the near future. Here, the current state of the art on the different materials, the used configurations for the development of sensors and actuators, as well as the main values of the ME coupling obtained for the different polymer‐based systems are summarized. Further, some of the specific applications that are being developed for those polymer‐based ME materials are addressed as well as the main advantages and remaining challenges in this research field.     

磁电辅助快速腌制咸鸭蛋的工艺分析

咸鸭蛋是一种非常受人们喜爱的食品,但是咸鸭蛋的腌制需要花费非常长的时间.随着现代科学技术的不断发展,采用磁电辅助的方式已经实现了咸鸭蛋的快速腌制,只要选取合适的磁场强度、电场频率、体系场强,在腌制咸鸭蛋过程中,就能够获得更高的出油率和盐分.本文就磁电辅助快速腌制咸鸭蛋的工艺进行分析,旨在为同行提供参考.     

一种新型介质谐振天线设计

采用双层磁电复合材料为基板,制作了一款小型(38 mm×38 mm)宽带介质谐振天线。为减小尺寸并提高带宽,天线采用了共面波导馈电及倒L形金属片加载。通过理论分析,给出了天线的等效电路,并对其进行了仿真分析。结果表明:在回波损耗S11<–10 dB时,该天线的工作频段为4.93~6.75 GHz,实现了宽频带的设计目的。     

层状磁电复合基板微带天线设计及应用

 本文提出一种新的小型化、宽频带微带天线.采用以层状磁电复合材料为基板的微带天线形式,推导了设计公式并给出计算结果.与介质基板矩形微带天线相比,该磁电复合基板天线的尺寸缩小了40%多,而带宽约为6%,是介质基板天线4倍.     

NFO/PZT复合磁电薄膜生长制备及性能的研究

采用脉冲激光沉积(PLD)法,在制备有SrRuO3底电极的SrTiO3(001)基片上生长高质量的NiFe2O4/Pb(Zr0.52Ti0.48)O3双层复合磁电薄膜.用X-射线衍射(XRD)对复合薄膜的微结构进行详细表征,结果表明,复合薄膜中NiFe2O4、Pb(Zr0.52Ti0.48)O3结晶良好,且具有单一的面外取向,Φ扫描模式显示NiFe2O4、Pb(Zr0.52Ti0.48)O3均延SrTiO3(001)方向外延生长.磁电性能表征结果表明,由于界面应力效应的作用,复合薄膜的铁电性较单层Pb(Zr0.52Ti0.48)O3明显减弱,而铁磁性基本保持NiFe2O4的软磁特性.     

Readdressing of Magnetoelectric Effect in Bulk BiFeO3

After decades of study, BiFeO₃ is still the most promising single‐phase multiferroic material due to its large polarization and high operating temperature, drawing much attention. As a typical type‐I multiferroic material, the magnetoelectric coupling in BiFeO₃ is deemed to be weak due to the different origins of its ferroelectricity and magnetism. Here, the magnetoelectric effect in bulk BiFeO₃ is readdressed both theoretically and experimentally. Based on the Dzyaloshinsky–Moriya interaction scenario, the magnetoelectric effect in BiFeO₃ is actually strong, with a coupling energy of about 1.25 meV and a magnetism‐coupled parasitic polarization comparable to that of the type‐II multiferroics. However, such strong magnetoelectric coupling also causes the cycloidal spin structure, which inhibits the observation of linear magnetoelectric coupling in bulk BiFeO₃. To resolve this contradiction, Sm‐substitution is utilized to suppress the magnetoelectric effect and unlocks the weak ferromagnetism. At an optimized composition, such a weak ferromagnetic state can be switched back to the cycloidal state by an electric field, thus realizing electrical control of the magnetism. It has been argued that field‐controlled phase transition is a promising path to colossal magnetoelectric effect. It is of pioneering significance for further investigations down this road.