基于纹理子块的小波变换数字水印算法

提出了一种基于纹理子块的小波变换数字水印算法，该算法能够依据人眼视觉特性，通过水印图像降维、图像子块划分等措施．将随机置乱的数字水印信息嵌入到高频子带的纹理区内，从而高效率地实现局部水印和全局水印之双重目的。实验结果表明：本文提出的数字水印算法不仅具有较好的透明性，而且对诸如叠加噪声、JPEG压缩、平滑滤波、几何剪切、图像增强、马赛克等攻击均具有较好的鲁棒性。     

一种基于小波变换的数字水印算法

提出一种基于人类视觉系统和小波变换的数字水印算法.该算法同时对水印信息和载体信息进行小波变换,根据HVS模型把水印信息DWT变换后的系数嵌入到图像载体DWT系数中.理论分析和实验结果表明:该算法很好的解决了水印鲁棒性和不可见性之间的矛盾,对一般的图像处理和攻击,如JPEG压缩、滤波、加噪声、裁剪等有很好的鲁棒性.     

基于混沌与自适应小波变换的图像水印算法

目前基于小波变换的数字水印算法,主要根据低频小波系数的幅值大小确定是否嵌入水印,该算法的缺点是嵌入水印后的图像透明性有待提高。基于以上问题,提出一种基于混沌加密和自适应小波变换的图像数字盲水印算法。采用混沌映射和m序列先后对水印置乱,结合人眼视觉特性确定载体图像的纹理区,选用自适应小波变换分解纹理区,将水印信息嵌入其高频子带中。实验结果表明,该算法可有效提高水印的安全性,具有较好的鲁棒性和不可见性。     

基于小波变换的彩色图像数字水印新算法

提出了一种将灰度图像嵌入到原始彩色图像中的新数字水印算法.对RGB色彩空间彩色图像的绿色分量和蓝色分量进行haar小波变换.低频系数经过量化,将经过Arnold置乱后的灰度水印图像的位平面嵌入到低频子带.水印提取不需要原始载体图像.实验结果表明,该彩色图像数字水印算法不仅具有较好的透明性,而且对诸如叠加噪声、JPEG压缩、平滑滤波、几何剪切、图像增强和马赛克效果等攻击均具有较好的鲁棒性.     

一种基于DWT和HVS的数字水印算法

分析了基于离散小波变换的图像水印嵌入方法.运用人眼视觉掩蔽模型(HVS)增强了数字水印的安全性和隐蔽性,把水印嵌入到感觉重要的小波变换系数中,提高了水印的稳健性.实验结果表明,该算法复杂度低,实用性较强,对JPEG压缩、滤波、加噪等图像处理操作有较强的鲁棒性.     

基于改进的DWT的图像盲水印算法研究

给出一种基于改进的DWT的图像盲水印算法,该水印采用文本图像水印.首先,利用小波变换的多分辨率特性,对小波变换后的子图像系数采样.然后将其嵌入原始图像各级变换的不同位置,使嵌入的水印具有更好的保密性和可辨识性.通过试验表明,该算法对剪切、JPEG或JPEG2000压缩等图像退化处理或攻击均具有较强的鲁棒性.     

一种基于曲波变换的数字水印算法

提出了一种基于曲波变换的数字水印算法,该算法将水印信息嵌入到曲波变换的粗尺度系数矩阵中,考虑到水印鲁棒性和不可见性的要求,选择合理的嵌入强度,使得加水印图像的不可见性更好。由于选择了代表图像大多数能量的低频系数嵌入,在抵抗JPEG压缩、噪声攻击、中值滤波等攻击性能方面较理想,因此文中算法具有较强的鲁棒性,能满足水印系统不可见性和鲁棒性的要求。     

基于DCT变换的QWT域改进的图像盲水印算法

针对数字图像的版权保护,基于离散余弦变换和四元数小波变换,提出了一种新的改进的盲水印算法,先根据待嵌入水印的大小对载体图像进行四元数小波变换,获得与幅值和相位信息相对应的4幅低频子带,然后对每个低频子带分别进行全局离散余弦变换,最后通过修改两个随机子带中特定位置上DCT系数的大小关系嵌入水印,利用分阶线性Logistic映射产生的混沌序列预处理经Arnold置乱后的水印信息和确定水印的嵌入位置.实验结果表明,该算法对添加噪声、JPEG压缩、滤波和亮度及对比度调整等攻击都具有很强的鲁棒性.     

基于离散小波变换和混沌加密的图像水印算法

文中提出了一种基于离散小波变换和混沌加密的数字水印新算法,采用二维混沌变换对水印图像加密;对载体图像进行多分辨离散小波变换,应用小波系数判断载体图像的纹理复创杂程度后,依据人眼的视觉系统（HVS）特性,将水印信号嵌入到图像的低频部分,对图像的不同分解层分别选取不同的纹理阈值和水印嵌入强度,将数字水印嵌入到相同分辨层的原始图像中,提高了水印算法的鲁棒性.在检测和提取水印时,通过水印相似度（NC）和峰值信噪比（PNSR）评价水印质量,实验结果表明提出的算法可以抵抗剪裁、JPEG压缩、滤波等几何攻击,算法简单,计算复杂度小,兼顾了水印的不可见性和鲁棒性.     

基于系数奇偶量化的图像水印算法

文中提出了一种新的基于系数奇偶量化的图像小波域数字水印算法,该算法首先对水印图像进行置乱处理,载体图像的小波变换系数经奇偶量化后,将置乱后的水印图像嵌入其中。算法对小波系数的奇偶量化性能在鲁棒性和水印的不可见性上进行了很好的折衷,实验表明该算法对载体图像的影响较小且具有很好的鲁棒性,可以有效地抵抗JPEG压缩、噪声干扰等常见的攻击。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.