Large-area deposition of biaxially textured YSZ buffer layers using an IBAD-process

An ion-beam-assisted deposition technique (IBAD), using two Kaufman ion sources with diameters of 11 cm, was employed to grow biaxially textured YSZ buffer layers. They serve as a template for YBCO films and as a diffusion barrier. The best YSZ films on small Al₂O₃ substrates show good in-plane alignment characterized by a FWHM of 10.8° in (111)-Φ-scan. An improvement of texture with rising film thickness was observed saturating at 8.5°. On 100 cm² large substrates the texture was within a range of 15° to 24°. First improvements of the homogeneity were achieved by a four-time rotating of 90° of the substrate holder around the substrate normal during deposition. On polycrystalline PSZ substrates with YSZ buffers YBCO films with a critical current j_c > 10⁶ A/cm² (at 77 K, 0 T) were deposited.     

PBS法测量Ti膜中H同位素深度分布

在Mo底衬上制备了约5m的3个TiDxTy样品,用质子背散射（PBS）法分析了D、T在Ti膜中的深度分布,其中,T的分析能得出较为准确的结果,而D的分析结果受质子在Mo底衬中多次散射信号的影响偏差较大。分析结果表明,PBS法测量的T含量和浓度与样品制备过程中测量的结果一致,且T在Ti膜中分布均匀。这证明PBS法可用于对材料中T浓度与分布的分析。     

PROTON ELASTIC SCATTERING ANALYSIS OF C,N AND O COMPOSITION IN MATERIALS

Proton elastic scattering at energies around 2.0 MeV was used to determine the concentration of oxygen in a Y-Ba-Cu-O compound, nitrogen in a TiN film on steel substrate, and carbon and oxygen in a thin Mylar film. Proton scattering from light elements in this energy range exhibits non-Rutherford scattering cross section, which is enhanced by a factor of 4 to 7 relative to the Rutherford scattering cross section. Thus the sensitivity for the light element detection is considerably larger than that obtained by He~+ ion scattering. Quantitative analysis by proton scattering is discussed and compared with other methods.     

La2/3Ca1/3MnO3薄膜结构与输运性质

用磁控溅射方法在不同单晶衬底材料上制备了一系列含La2／3Ca1／3MnO3(LCMO)薄膜。当薄膜厚度大于200A,在我们实验条件下可观测到金属．绝缘体转变,且转变温度随厚度和衬底材料而变化。渗流电阻模型被用来解释薄膜材料的电输运特性,结合薄膜外延特性(晶格失配)和薄膜与衬底的相互作用,及薄膜表面、界面粗糙度的测量可知薄膜的剩余电阻、极化子的激活能、金属．绝缘体转变温度等密切与薄膜质量相关。     

闪烁体薄膜在线测量质子束流强度

质子单粒子效应实验研究和质子加速器研究中,质子束流强测量关系着实验结果的可靠性和准确性。法拉第筒、金硅面垒探测器、金刚石探测器等传统探测方法均为拦截式测量,无法实现束流的在线测量。本文用闪烁体薄膜在线监测质子束流强。质子束流穿过薄膜闪烁体,沉积部分能量使其发光,用光电倍增管收集光信号,从而得到束流的强度信息。通过质子与闪烁体材料相互作用的理论计算得到闪烁体材料对质子束流的响应关系。在北大2×6 MeV串列加速器上对3–10 MeV的质子束流进行了实验测量,验证了其响应关系。     

Cross-section for D(p,p)D elastic scattering from 1.8 to 3.2 MeV at the laboratory angles of 155° and 165°

The D(p,p)D cross-sections for elastic scattering of proton on deuterium over incident proton energy range from 1.8 to 3.2 MeV at both laboratory angles of 155° and 165° were measured. A thin solid state target Ni/TiD_x/Ta/Al used for cross-section measurement was fabricated by firstly depositing layers of Ta, Ti and Ni film on the Al foil substrate of about 7 μm in turn using magnetron sputtering and then deuterating under the deuterium atmosphere. The areal density of metal element in each layer of film was measured with RBS analysis by using a 4.0 MeV ⁴He ion beam, while the areal density of the deuterium absorbed in the Ti film was measured with ERD analysis by using a 6.0 MeV ¹⁶O ion beam. The results show that the cross-sections of p-D scattering under this experimental circumstance were much enhanced over the Rutherford cross-section value. It was found that the enhancement increases linearly as the energy of the incident beam increases. The total uncertainty in the measurements was less than 7.5%.     

预处理和溅射工艺参数对锆合金表面TiN涂层膜/基结合强度的影响

为获得高结合强度锆合金表面涂层的制备技术，采用磁控溅射法制备了TiN涂层、划痕法测试了膜/基结合强度，研究了基体预处理表面粗糙度、溅射功率、基体加热温度和基体偏压对锆合金表面TiN涂层膜/基结合强度的影响。实验制备的TiN涂层厚度在5～15 μm范围内、基体预处理表面粗糙度在（0.20±0.03） μm范围内时，溅射功率为500 W及基体加热至300 ℃时涂层均有较好的结合强度。基体偏压为-100 V时涂层在所讨论的4种基体偏压中具有最好的结合强度。结果表明，溅射工艺参数对涂层膜/基结合强度有显著影响，其中影响显著性从大到小依次为基体加热温度、基体偏压、溅射功率、基体预处理表面粗糙度。     

钇离子束动态增强沉积氮化钛膜

在膜层上接收注入钇离子和沉积钛原子比例Y^ :Ti=1:2的条件下，采用钇离子束动态增强沉积方法，在纯铁等基体上制备氮化钛膜层试样。对试样予以电化学测试和AES、XRD分析。XRD结果未发现钇单质或氮化钇的衍射峰。载能金属离子的动态增强沉积作用产生了界面混合效果，形成较宽的过渡层。动态增强沉积试样比非增强沉积试样有更强的抗电化学腐蚀能力。     

D-T中子源的反冲质子望远镜模拟研究

为了设计用于监测D-T中子产额的反冲质子望远镜系统,采用MCNP程序模拟了14MeV中子在不同厚度的聚乙烯膜上产生的反冲质子的产额、能谱及角分布,通过对反冲质子的产额、能谱和角分布数据的分析,给出了用于D-T中子产额监测的反冲质子望远镜系统的聚乙烯膜最佳厚度和探测器放置位置。建立了D-T中子源模型,模拟设计了反冲质子望远镜系统,并给出了系统的探测效率。     

超高真空脉冲激光沉积Au、U单层膜及Au/U/Au复合膜研究

采用超高真空脉冲激光沉积（PLD）方法,在单晶Si基底表面制备了单层Au、单层U薄膜和Au/U/Au复合薄膜,应用SEM、白光干涉轮廓分析和AES分析,研究了靶基距、基片温度和激光能量对薄膜形貌、成分的影响。目前的实验结果显示,PLD所制备的Au、U薄膜表面有μm级以下粒径的液滴产生,在液滴较少位置,薄膜表面粗糙度R_a小于1 nm,在包含大液滴位置,R_a不超过15 nm。在相同沉积条件下,U薄膜表面液滴数量大于Au薄膜。优化单层薄膜沉积工艺后制备的Au/U/Au复合膜厚度约为195 nm,均方根粗糙度R_q在0.3～1.5 nm之间。AES分析显示,Au/U/Au复合膜中强化学活性的铀呈金属状态,复合膜中的氧含量低于5%（原子百分数）,表层Au薄膜对U薄膜起到了良好的防氧化作用。在沉积工艺中,通过减小激光功率、增大靶基距并适当升高基片温度,可减少液滴的数量及粒径。     

Strain in GaN／Si〈111〉by RBS／Channeling

GaN film grown on Si substrate was characterized by Rutherford backscattering /Channeling(RBS/C).The experimental results show that the thickness of GaN epilayer is about 2.5μm and the GaN film has a good crystalline quality (Xmin=3.3%).By using channeling angular scanning,the 0.35% of average tetragonal distortion in GaN layer is observed.I addition,the depth profiles of strain in GaN film layer reveal that the strain in GaN film nonlinearly decreases with the increase of film thickness,The strain-free thickness(above 2.5μm) of GaN film on Si substrate is far below that(150μm) of GaN film on Sapphire.     

An indirect method to measure the electric charge deposited on insulators during PIXE analysis

Total charge deposited by a proton beam in an insulator during PIXE analysis has been indirectly determined using a Mylar film coated with cobalt. Elemental concentrations in the samples, pieces of volcanic glass, were obtained and compared to concentrations determined by ICP OES on the same samples. The strong agreement between these results shows the accuracy of the charge determined by this method.     

Analytical developments in the Wong–Fung–Tam–Gao radiation model of thermal diffusivity

When the thermal diffusivity, χ, of a thin film on a substrate is measured by means of the mirage method, the photothermal deflection of the probe beam is determined by the heat radiation field contributed by the film and the substrate, heated by the pump beam. A two-dimensional algorithm is here presented in order to deduce the measure of the diffusivities of the film and the substrate in one set of mirage detection from the experimental data.     

一种Zr基非晶/晶体复合型核材料的力学性能与耐腐蚀性能的研究

采用Zr65Cu35和Nb双靶直流共溅射方法,通过调节Nb靶的溅射功率,制备了不同Nb含量的Zr Cu Nb非晶薄膜。分别使用能谱仪、X射线衍射仪、高分辨透射电子显微镜观察Zr Cu Nb非晶薄膜的成分与结构,最终选择具有优异非晶形成能力的Zr53Cu38Nb9成分溅射到纯Zr基片上,以制备锆基非晶复合材料。研究测试Zr53Cu38Nb9非晶复合材料的力学性能与耐腐蚀性能。结果表明:与纯Zr基片相比,复合材料在弹性阶段力学性能无明显差异;而在塑性变形阶段,由于非晶薄膜与纯Zr基片的变形与断裂机制不同,该复合材料具有更好的拉伸塑性,其表现为非晶膜厚为280 nm、640 nm和960 nm的复合材料的最大拉伸塑性形变较纯Zr基片分别提高了2.72%、5.22%、4.27%;在耐腐蚀性能方面,非晶膜厚为640 nm的复合材料与纯Zr基片相比,具有较小的自腐蚀电流密度icorr、较正的腐蚀电位Ecorr以及较大的容抗弧半径,表现出更优异的耐腐蚀能力。因此,该新型Zr基复合材料在核材料领域具有潜在的应用。     

Fuel performance evaluation of rock-like oxide fuels

The concept of the rock-like oxide (ROX) fuel has been developed for the annihilation of excess plutonium in light water reactors. Irradiation tests and post-irradiation examinations were carried out on candidate ROX fuels. The ternary fuel of YSZ–spinel–corundum system, the single-phase fuels of YSZ, the particle-dispersed fuels of YSZ in spinel or corundum matrix, and the blended fuels of YSZ and spinel or corundum matrix were fabricated and submitted to irradiation testings. The fuels containing spinel showed chemical instabilities with the vaporization of MgO component, which caused fuel restructuring. The swelling behavior was improved with the particle-dispersed fuels. However, the particle-dispersed fuels showed higher fractional gas release (FGR) than blended type fuels. The FGR of YSZ single-phase fuels were comparable to what would be expected for UO₂ fuel at the similar fuel temperatures. The YSZ single-phase fuel showed the best irradiation performance among the ROX fuels investigated.     

贮氢金属多层膜制备技术及吸氢性能研究

研究了用电子束蒸发方法在Mo底衬上制备Ti-Ni复合膜和在SiO2底衬上制备Mo-Ti-Ni复合膜的方法,用离子束分析方法测量了各膜层的厚度,并对样品的吸氢性能进行了分析。研究发现,Ti膜表面镀Ni后,其吸氢温度降低,吸氢总量增加,表明其吸氢活性增强;Mo-Ti-Ni复合膜在Ti氢化后与SiO2底衬结合良好,并具有较高的强度,但这种膜对底衬的清洁度要求更高;50nm的Ti膜难以吸氢,原因可能是膜制备过程中温度过高,导致Mo-Ti-Ni之间扩散加深,形成相对过厚的过渡层,这还需进一步研究。     

W/BDD薄膜电极制备及其电化学性能研究

利用化学气相沉积（CVD）法研制了一种钨基硼掺杂金刚石（W/BDD）薄膜电极，通过扫描电镜和Raman光谱考察了W/BDD薄膜电极的性能，通过电化学方法测定了其在LiCl-KCl熔盐中的电化学窗口和电化学性能。结果表明，研制的W/BDD薄膜电极的BDD薄膜有较好的微观结构；W/BDD薄膜电极在LiCl-KCl熔盐中的电化学窗口约为3.5 V(-2.5～1.0 V，相对于Ag/AgCl参比极电位)；电解过程中，氧离子不与W/BDD薄膜电极表面BDD薄膜层的碳反应，直接被氧化为氧原子；长时间电解不会改变电极表面薄膜层的形貌和结构。     

衬底温度对蒸汽辅助沉积法制备钙钛矿薄膜微观结构的影响

通过调控薄膜生长衬底温度,提出了一种改良的蒸汽辅助沉积法制备有机-无机混合钙钛矿薄膜,可以更为可控优化薄膜生长条件。用同步辐射掠入射X射线衍射(Grazing Incidence X-ray Diffraction,GIXRD)结合扫描电镜(Scanning Electron Microscope,SEM)、紫外可见吸收谱(UV-Visible Absorption Spectrum)等表征方法证明衬底温度对制备的钙钛矿薄膜质量具有重要的作用:较低的衬底温度(约70?C)有助于钙钛矿晶粒的形成,其结晶性、晶面择优生长取向均较好,同时具有较高的光吸收性能;当衬底温度升高时(100?C、125?C),所制备的钙钛矿薄膜结晶性变弱,晶体择优生长取向明显变差,光吸收性能随之下降。研究结果有助于进一步优化蒸汽辅助沉积法制备钙钛矿薄膜工艺。     

质子吸收剂量校准中蒙特卡罗方法的应用

在使用法拉第筒校准丙氨酸剂量计质子吸收剂量的实验中,质子会受到管道和器壁等物质的影响,造成实验测量结果偏差。为提高测量的准确性,使用FLUKA蒙特卡罗软件,模拟质子在管道中的输运过程。结果表明,加入Ta散射膜后,质子束能均匀地辐照并覆盖丙氨酸剂量计。穿过丙氨酸剂量计的质子数略大于法拉第筒测量值,模拟计算得到测量修正因子k＝1.014。模拟计算了丙氨酸剂量计中的质子能谱分布,随后计算了丙氨酸剂量计的平均碰撞阻止本领。通过模拟计算和修正,获得了更准确的实验数据,最终得到丙氨酸剂量计质子辐照校准曲线,线性相关系数为0.9995。