A Novel Analysis of a $Ku$-Band Planar p-i-n Diode Limiter

Two new analyses for a single-stage limiter were presented; one is an analytic approach based on the approximation of the voltage waveforms of a p-i-n diode in the limiter, while the other models the p-i-n diode by a p-n diode. The analytic expressions resulting from the analytic approach explicitly show the role of the diode parameters on the limiter performances, which can be used as a guide to select adequate p-i-n diodes for the limiter. The two analyses were verified using the large-signal p-i-n diode model developed by measurements. Our analysis was then extended to multistage limiters. Based on our analysis, we designed and fabricated a limiter with an insertion loss of 1.3 dB and a flat leakage of 11.7 dBm for a $Ku$-band input power of 20 W.      

Theory of an Efficient Electronic Phase Shifter Employing a Multilayer Dielectric-Waveguide Structure

Multilayer dielectric-waveguide theory is applied to the design of a submillimeter phase shifter driven by a p-i-n diode. In a three-layer structure, proper choice of layer thicknesses can yield a predicted phase shift/unit length about ten times that possible from a single slab at the same frequency. In a properly specified four-layer structure, still larger shifts, limited primarily by the required excursion in effective refractive index, are shown to be possible. A further advantage of the four-layer structure is that it can be designed to have a very thin active region, thus lowering diode power/unit phase shift, which is proportional to the cross section of the intrinsic region of the p-i-n diode.     

Techniques for reducing the peak power of a switching transistor with p-i-n diode load

Describes techniques for reducing the peak power of switching transistor that reverse biases a p-i-n diode load. Particular emphasis is placed on a parallel combination of a Zener diode and an inductor and it is shown that, for an experimental p-i-n driver, the peak power is reduced from 252 to 90 W.     

多晶PIN二极管及二极管串作良好工艺兼容并可移植ESD保护器件的研究

作为静电保护保护器件,多晶PIN二极管具有良好工艺兼容性及可移植的优点。文章制作并展示了多晶PIN二极管的反向击穿电压、漏电流及电容特性,同时通过正向及反向传输线脉冲电流电压特性评估了其静电保护能力。另外为了经一部降低电容并控制反向崩溃及正向开启电压对多晶PIN二极管串进行了研究。最后对器件特性进行了分析讨论,阐明了器件参数对性能的影响。     

Theoretical and experimental investigation of novel varactor-tunedswitchable microstrip ring resonator circuits

A microstrip ring resonator circuit loaded with two p-i-n diodes has been developed for use as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter can be made electronically tunable. Isolation exceeding 20 dB with 9% tuning bandwidth was demonstrated. An analysis based on transmission line theory was used to model both circuits. The analysis includes the effects of diode parasitics, coupling gaps, dispersion, and mounting-gap capacitance. The experimental results agree very well with the theoretical calculation     

The frequency-dependent impedance of p-i-n diodes

It is demonstrated that the impedance of a forward-biased p-i-n diode is definable as a function of frequency and depends on the diode's geometry and electronic properties. A procedure for calculating the equivalent series p-i-n diode impedance is presented and compared with experimental resistance versus frequency data for silicon p-i-n diodes. A procedure is also outlined for determining diode parameters for a desired resistance-frequency response     

Distortion In p-i-n Diode Control Circuits

Traditionally, distortion in p-i-n diodes has been thought to be only a function of the carrier lifetime and frequency of operation. This understanding is based on empirical evidence and is not entirely accurate. This paper will discuss the origins of p-i-n diode distortion and study the effects of various devices parameters on distortion performance. Included in the investigation on single-diode circuits will be switching circuits and reflective attenuators. In switch circuits, the analysis shows that distortion can be minimized by maximizing the stored-to-charge resistance ratio in the diode. In attenuators, the analysis shows that maximizing the i-region thickness will minimize distortion, independent of the device carrier life-time. In attenuators where multiple p-i-n diodes are used (the bridged-tee and PI are discussed), maximizing the i-region thickness also minimizes the distortion, independent of carrier lifetime. The model accurately predicts distortion signal cancellation in both single and multiple p-i-n diode circuits.     

Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

The p-i-n diodes were fabricated using 31 /spl mu/m thick n/sup -/- and p-type 6H-SiC epilayers grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum doping, respectively. The diode exhibited a very high breakdown voltage of 4.2 kV with a low on-resistance of 4.6 m/spl Omega/cm/sup 2/. This on-resistance is lower (by a factor of five) than that of a Si p-i-n diode with a similar breakdown voltage. The leakage current density was substantially lower even at high temperatures. The fabricated SiC p-i-n diode showed fast switching with a turn-off time of 0.18 /spl mu/s at 300 K. The carrier lifetime was estimated to be 0.64 /spl mu/s at 300 K, and more than 5.20 /spl mu/s at 500 K. Various characteristics of SiC p-i-n diodes which have an advantage of lower power dissipation owing to conductivity modulation were investigated.     

High-speed ASK transceiver based on the NRD-guide technology at60-GHz band

A new type of high-speed amplitude shift-keying (ASK) transceiver has been developed in an integrated manner at 60 GHz by using the nonradiative dielectric waveguide (NRD-guide) technology. An emphasis is placed on the high-speed performance of the newly developed ASK modulator. The modulator uses a Schottky barrier diode (SBD), which has higher switching speed than a p-i-n diode. In addition, the operation principle of it is different from that of the conventional p-i-n diode modulator. A pair of NRD-guide transceivers have been fabricated and 400-Mb/s data-transmission test has been carried out successfully by using them     

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects the diode impedance. This effect is taken into account to increase the accuracy of existing numerical models and to extend their validity domain to any I-region thicknesses. This improvement has been validated by measurement results on a 5-mum I-region width silicon p-i-n diode     

P-I-N Diodes for Low-Frequency High-Power Switching Applications

The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region. The improvement of p-i-n diode lifetimes with thicker I-layers or with planar construction has been studied and the performance of these diodes in a routing switch is reported.     

Study of the frequency response of the multiplication gain of a two-layer avalanche photodiode

A study of the multiplication gain against frequency has been made for a two-layer avalanche photodiode consisting of an avalanche layer and a drift layer. The analysis shows that as the ratio of the avalanche-layer width to drift-layer width increases (keeping the total depletion-layer width fixed), the multiplication gain increases but the bandwidth of the diode decreases. However, when photons are absorbed in the p-region, i.e., before entering the depletion region, the multiplication gain of the diode remains almost the same while the bandwidth increases as the structure changes from p-i-n to Read type.     

Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device

正The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge(ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLPⅠ-Ⅴcharacteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes.     

PIN管控制电路功率容量的确定

PIN管控制电路的功率容量是一个重要的电路参数，必须全面考虑PIN管本身的功率容量和电路结构形式、施加的反向偏置电压、射频信号的频率和形式以及电路在系统中的匹配状况、工作环境和可靠性要求等各项因素综合确定。分析了对影响电路功率容量确定的各种因素，介绍了在射频系统中PIN管控制电路功率容量确定的综合方法。     

Design calculations of reverse bias characteristics for microwave p-i-n diodes

The derivation of a set of design formulas for predicting the impedance of diffused p-i-n diodes as a function of reverse bias voltage is presented. The diode is divided into five regions, and appropriate approximations are made in each region to simplify the integration of resistive and reactive contributions to the total impedance. Using these formulas, curves of series resistance and capacitance versus voltage are computed for an experimental diode reported by Senhouse. The curves agree well with others obtained using more complicated methods of integration. In addition to being useful for design calculations, the formulas derived offer insight as to the effects of frequency on diode impedance and the relative contributions of the various regions of the diode to the total impedance.     

140-GHz Finline Components (Short Papers)

A balanced mixer and a p-i-n diode switch based on finline technique for the frequency range around 140 GHz are described. The mixer exhibits a conversion loss of 7 to 8 dB, whereas the p-i-n diode switch shows an insertion loss of 2 dB and a maximum attenuation of 33 dB.     

A new programmable load for noise parameter determination

A new computer-controlled programmable load is presented. The load consists of a cascade of p-i-n diodes bonded to each other. The capacitance of the reverse-biased p-i-n diode, together with the interconnecting bonding wires, forms an artificial transmission line. A complete phase coverage in the Smith chart is obtained by forward biasing any diode pair, using only two current generators and two multiplexers. The amplitude coverage will depend on the diode spacing. The load may be set to any reflection coefficient within its coverage area. Synthesis formulas for the determination of the current driver settings have been derived. A calibration procedure determining the unknown synthesis parameters from input port measurements only is presented. Only the p-i-n diode parameters are characterized separately. The programmable load has been built and tested. Measurements verify the principle and show good agreement with computer simulations. The load has been developed for noise parameter determination. Other applications for variable impedance measurements are circuit or device optimization of gain output power performance     

Silicon optical modulators at 1.3-μm based on free-carrierabsorption

Silicon optical waveguide modulators, appropriate for operation in the 1.3-1.55 μm wavelength region, have been fabricated and their performance characterized at the wavelength of 1.3 μm. The modulator structures consist of p-i-n diodes integrated with silicon waveguides; device operation is based on free-carrier absorption. Modulation depths of -6.2 dB and response times less than 50 ns have been measured. Experimental results are compared with the p-i-n diode theory. It is argued that the device is suitable for integration with silicon electronics and silicon optoelectronic devices. The response times measured for the current devices may be improved by reducing the transverse dimensions of the p-i-n structure     

Establishing the minimum reverse bias for a p-i-n diode in ahigh-power switch

An important circuit design parameter in a high-power p-i-n diode application is the selection of an appropriate applied DC reverse bias voltage. Until now, this important circuit parameter has been chosen either conservatively, using the magnitude of the peak RF voltage, or by empirical trials to determine a possible lower value. The reverse bias requirement for a p-i-n diode operating in a high-power RF and microwave environment is explored. It is demonstrated that the minimum reverse bias voltage is equivalent to the p-i-n diode's self-generated DC voltage under similar RF conditions. A concise expression for this self-generated voltage is developed and experimentally verified and should assist the design engineer in more accurately selecting an appropriate minimum value for the applied reverse bias voltage setting     

Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements

The Kurokawa-Schlosser quality factor Q̂ is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q̂ is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs pin has the higher Q̂ and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.