掺铑钛酸钡晶体中温度增强的光折变性质

掺铑钛酸钡晶体是一种近年来生长成功的光折变晶体。人们对它的光折变性质如二波耦合、相位共轭、光致吸收等都做过很多研究。但关于其光折变性质随温度的变化尚未见报导。本文中我们对物理所生长的掺铑钛酸钡晶体的光折变性质对温度的依赖性进行了研究，发现其二波耦会强度及其相位共轭反射率随温度的升高而增加。在二波耦合实验中，我们用He－Ne激光器作光源，为消除强的扇光而采用o光偏振，两束对称入射（晶体外夹角2θ=18°）。泵浦光强度为0．36W／cm2，泵浦光与信号光的强度比为为20，测得二波耦合强度随温度线性增加，当温度从20℃…     

LiNbO3：Fe晶体用作光折变实时光学相关器的研制

首次用ＬｉＮｂＯ３：Ｆｅ晶体薄片作为匹配滤波器代替传统的光学盯关器中的全息干板，成功地研制成实时光学相关器，在此光折变晶体中写人全息光栅的时间只需几秒－几分种，因而与传统的光学相关器的相比较，它具有快速，实时，简便及定位可靠等优点，用此器件实现了相关运算，卷积运算，特征字符识别等。     

光折变晶体中的相位共轭

近几年来,光折变相位共轭器及其在非线性光学中的应用取得了有意义的进步。本文主要叙述光折变晶体中的四波混频以及各种光学相位共轭器的结构,简单地介绍了相位共轭器在光信息处理中的一些应用。     

钛酸钡（BaTiO3）的光束Fanning效应

我们通过实验对激光束透过光折变晶体(BaTiO_3)产生的Fanning效应作了研究。晶体光轴取向、入射光束的偏振状态和入射角是影响光束Fanning效应的主要因素。本文给出实验结果并作了扼要的理论分析。     

光折变晶体内的光振荡和光学限幅器

提出了一种利用光折变晶体光振荡的光学限幅器,在SBN晶体中得到了口字型和8字型光振荡通路,给出了光振荡的阈值条件以及作为光学限幅器的透射率与耦合系数的关系,并讨论了控制光振荡形式以改变限幅器性能的途径。     

BaTiO_3晶体光折变效应振荡器和机理研究

在薄征Ce:BaTiO3晶体和体块Rh:BaTiO3晶体实现了光折变效应振荡器,利用前向二波耦合和相向二波耦合建立了光折变效应准线笥F－P腔模型,并从实验结果上进行了验证和分析,同时分析了光振荡现象对BaTiO3晶体的受激光折变散射自泵浦相位共轭的影响。     

采用光折变全息干涉计量术对光楔特性的测量

光折变晶体是一种新型的记录材料,应用光折变效应,不需显影、定影等处理,就可实现实时观测。文章探讨了光折变实时全息干涉法在光学检测中的应用,提出同时确定光楔楔角和折射率的新方法,从而改变了只有光楔的折射率和楔角中一个已知时才可测量另一个未知量的传统测量方法。介绍了实验过程,分析得出了最后实验结果。     

纳米晶钛酸钡粉体制备及陶瓷烧结性能的研究

采用硬脂酸钡和钛酸丁酯为原料的凝胶方法制备了纳米晶钛酸钡粉。ＸＲＤ分析表明晶体为立方相钙钛矿结构，扫描电镜图像显示一次粒子粒径约２０ｎｍ。纳米粉体烧结温度比普通微米粉体烧结温度低，陶瓷显微结构分析表明在陶瓷中晶粒仍保持纳米尺寸，约为１００ｎｍ。所得材料具有良好的热稳定性，在１１９０～１２８０℃的烧结温度范围内，陶瓷体内晶粒无明显长大，且始终维持在纳米尺寸。     

一维光子晶体偏振滤波器通道数的影响因素研究

光子晶体偏振滤波器是利用光子晶体带隙特性来控制信号光偏振状态的一种新型滤波器, 在光纤通信、光学传感测量、光学信息处理等领域均有重要应用。通道数多少是偏振滤波器设计的重要指标, 通道越多则信息容量越大, 越有利于系统的小型化微型化。利用光学传输矩阵法研究了影响一维光子晶体偏振滤波器通道数目的因素, 研究表明：(1）光子晶体缺陷层厚度是影响滤波器通道数目的关键因素, 通道数N与厚度D近似满足线性关系, 在500 ～650 nm波段函数关系为N=0.0035D+0.159; (2）缺陷层折射率nc的变化也会导致通道数改变, 折射率越大通道数越多;( 3）光子晶体单元层数和单元厚度改变不会影响滤波通道数, 但可以调节通道中心波长位置, 同时对偏振度和分离度也有影响。     

掺杂对光折变晶体性能的影响

以钛酸钡，铌酸锶钡和铌酸钾钡锶钡「（Ｋ１－６Ｎａｙ）０．４（ＳｒｘＢａ１－ｘ）０．８Ｎｂ２Ｏ６，ＫＮＳＢＮ」为例，评述掺杂对提高光折变晶体性能的重要作用。     

Barium Titanate Inverted Opals—Synthesis,Characterization, and Optical Properties

Barium titanate inverted opals with powder and film morphologies were synthesized from barium ethoxide and titanium isopropoxide in the interstitial spaces of a polystyrene opal. This procedure involves infiltration of precursors into the interstices of the polystyrene opal template followed by hydrolytic polycondensation of the precursors to amorphous barium titanate and removal of the polystyrene opal by solvent extraction or calcination. In‐situ variable temperature powder X‐ray diffraction and micro‐Raman spectroscopy allow one to observe the thermally induced transformation of the as‐synthesized amorphous barium titanate inverted opal to the nanocrystalline form. In this way, a nanocrystalline barium titanate inverted opal can be engineered as either the cubic or tetragonal polymorph. Control of this process is key to the practical realization of a room‐temperature stable ferroelectric barium titanate inverted opal that can be thermally tuned through the ferroelectric–paraelectric transition around the Curie temperature. Optical characterization demonstrated photonic crystal behavior of the inverted barium titanate opals and results were in good agreement with photonic band structure calculations. The synthesis of optical quality ferroelectric barium titanate inverted opals provides an opportunity to electrically and optically engineer the photonic band structure and the possibility of developing tunable three‐dimensional photonic crystal devices.     

CIS gather momentum

The recently developed method of crystal ion slicing (CIS) is rapidly gathering interest and attention as a novel way of successfully obtaining single-crystal thin films. The excellent opto-electrical properties of barium titanate, BaTiO₃, make this ferroelectric crystal eminently suitable for applications such as capacitors, pyroelectric detectors, and nonlinear optics. These films possess high dielectric constants and large pyroelectric and nonlinear coefficients. However, many potential applications for barium titanate require a thin-film form rather than a bulk crystal. Despite substantial advances in deposition technologies for barium titanate thin films, researchers have faced continued difficulty in obtaining high-quality, single-crystal thin films, since they require lattice matching to the growth substrate. CIS looks set to offer researchers a solution.This is a short news story only. Visit www.three-fives.com for the latest advanced semiconductor industry news.     

钙钛矿型铁电性微晶玻璃介电性能的研究

主要对BaTiO3、BaTiO3-PbTiO3系铁电性微晶玻璃的介电性能进行了研究。研制的微晶玻璃是由70%形成铁电主晶相BaTiO3的氧化物(BaO-TiO2 和PbO-BaO-TiO2)和30%形成玻璃相的氧化物(SiO2-Al2O3-CaO)组成。两种试料经热处理制成BaO-TiO2,PbO-BaO-TiO2系微晶玻璃,对其介电常数和损耗进行了比较,其介电性能与BaTiO3的晶体结构有关。     

溶剂热法制备立方钛酸钡纳米晶

将钛酸丁酯和适量乙醇混匀后,与氯化钡水溶液在溶剂热条件下反应制备立方钛酸钡纳米晶。结果表明:以KOH为矿化剂,r(Ba:Ti)为1.1,φ(乙醇)为25.0%和150℃反应12h,可得平均粒径为60nm左右、分散性较好的钛酸钡纳米晶。当乙醇用量增大时,产物的粒径减小,分散性降低;随着r(Ba:Ti)的增大,产物粒径减小。当r(Ba:Ti)为1.6时,产物的平均粒径可减小至35nm左右;矿化剂的种类、反应温度和反应时间对产物的形貌及晶体结构没有影响。     

一种新型介质谐振器带通滤波器

本文阐述一种能与微波集成电路结合使用的新型介质谐振器带通滤波器。这种滤波器是目前能用于微波集成电路的性能最佳的一种窄带滤波器。本文对这种滤波器作了理论分析;并导出了有关滤波器设计的主要公式;给出了一至四谐振器带通滤波器的实测性能。例如:一个相对带宽为 0.2％的 5cm三谐振器滤波器,其带内插损为 0.8dB左右,带外衰减大于50dB,30dB与 3dB的带宽比约为 3.3。     

Sb掺杂BaTiO_3的电磁及微波吸收特性研究

以BaCO3、TiO2、Sb2O3为原料,采用固相法制备了Sb掺杂BaTiO3样品,借助XRD、Raman光谱以及矢量网络分析仪等分析测试手段对所制样品的晶相、晶格常数、电磁性能及微波吸收特性进行了表征。结果表明:低掺杂Sb的样品均为单一四方相BaTiO3晶体,结晶良好;随着w(Sb2O3)的增大,晶格常数减小;与未掺杂的BaTiO3相比,Sb掺杂BaTiO3的反射损耗明显提高,且反射峰向低频方向偏移;当w(Sb2O3)为0.6%时,制得BaTiO3的反射损耗在3.7 GHz处达到最大值–28.2 dB。     

钛酸钡纳米粉体的共沉淀法合成与研究

采用TiCl4和BaCl2·2H2O原料,以正丁醇为分散剂,NH4HCO3和NH3·H2O作为沉淀剂合成钛酸钡前驱体,在900 ℃煅烧制备分散性良好的钛酸钡纳米粉体.利用XRD、透射电镜(TEM)和 SEM等手段分析了反应温度、TiCl4浓度、分散剂掺杂量等反应参数对粉体的晶相组成、晶粒度、形貌等的影响,并且测试了相应陶瓷烧结体的介电常数.结果表明,反应温度为900 ℃,TiCl4浓度为0.6 mol/L,分散剂用量为3‰条件下,保温2 h可制备高分散性的纳米级粉体.用以上方法制备的粉体烧结而成的陶瓷片介电常数约为3 400.     

Enhanced Dielectric and Crystalline Properties in Ferroelectric Barium Titanate Thin Films

A chemical solution synthesis technique incorporating barium titanate and a high‐temperature liquid phase is developed. In a temperature range conventional to thin‐film growth, the presence of the liquid phase dramatically enhances grain growth, densification, and overall crystalline quality. By controlling the liquid‐phase stoichiometry and molar fraction, thin films with grain sizes greater than 10 μm that pronounce X‐ray peak splitting, low loss, and permittivity values in excess of 3000 at room temperature can be produced. These properties are comparable, and in some cases superior, to those observed in well‐prepared bulk barium titanate. As such, the historical difficulty in reproducing bulklike properties in polycrystalline barium titanate is overcome. These results have broad implications for the expanded use of ferroelectric thin films by demonstrating bulk properties in thin layers and by providing a means of achieving these properties with low thermal budgets.     

A Low Loss X-Band Quasi-Elliptic Ferroelectric Tunable Filter

A compact high quality factor four-pole X-band tunable quasi-elliptic bandpass filter is presented in this letter. The filter is enabled by high-Q ferroelectric barium strontium titanate capacitors and open-loop resonators. The central frequency of 8.35 GHz and the frequency tuning range of 500 MHz (6%) are achieved with a dc bias voltage of 30 V. The selective filter has a fractional 1 dB bandwidth ranging from 5.5% up to 7.3%. The measured insertion loss and return loss are 5.7-3.5 dB and 10.2-7.9 dB, respectively, with a dc bias range of 0 to 30 V. To the best of our knowledge, this is the best analog tunable performance and selectivity in X-band.     

Colloidal processing of polymer ceramic nanocomposite integral capacitors

Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m).