稀土Ce对SnO2·Co2O3·Nb2O5压敏性能的影响

研究了掺Ce对SnO2·Co2O3·Nb2O5压敏电阻器性能的影响。研究发现Ce4+对Sn4+的取代能明显提高陶瓷的致密度,掺入x(CeO2)为0.05的陶瓷样品具有最高的密度(ρ=6.71g/cm3),最高的视在势垒电场(EB=413.6V/mm),最高的非线性系数(α=13.8),最高的势垒电压和最窄的势垒厚度。为了解释样品电学非线性性质的起源,该文提出了SnO2·Co2O3·Nb2O5·CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析。试验测量与等效电路分析结果相符。     

(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究

研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i 对 Sn4 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2 O5晶界缺陷势垒模型     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性能的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

TiO2掺杂导致的SnO2压敏陶瓷晶粒尺寸效应

研究了TiO2掺杂对SnO2-Co2O3-Nb2O5系压敏陶瓷材料电学性能的影响。掺入x(TiO2)为1.00%的陶瓷样品具有最高的密度(r = 6.82 g/cm3),最高的视在势垒电场(EB= 476 V/mm),最高的非线性系数(a = 11.0),最小的相对介电常数。未掺杂的样品阻抗最大。随TiO2掺杂量的增加晶粒逐渐变小,晶粒尺寸的减小归因于未固溶于SnO2晶格而偏析在晶界上的TiO2阻碍相邻SnO2晶粒融合。为了解释SnO2-Co2O3-Nb2O5-TiO2系电学非线性性质的根源,对前人的晶界缺陷势垒模型进行了修正。     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

MnCO_3掺杂对SnO_2·Ni_2O_3·Nb_2O_5压敏材料性能的影响

研究并分析了 Ni3+ 掺杂和 Co2 + 掺杂对 Sn O2 压敏电阻致密度和电学非线性性能的影响。研究了掺Mn2 +对 Sn O2 · Ni2 O3· Nb2 O5压敏材料性能的影响。发现 x(Mn CO3)为 0 .10 %时 ,压敏电阻具有最高的视在电场(EB=6 86 .89V/ m m)和最好的电学非线性性能 (α=12 .9)。样品的收缩率和致密度变化趋势不一致 ,这是因为样品的致密度是由收缩率和 Mn CO3的挥发量两因素共同决定的     

掺Y对二氧化钛低压压敏陶瓷性能的影响

通过对样品密度、介电常数、I-V特性及晶界势垒特性的测定和分析,研究掺Y对(Y,Nb)掺杂的二氧化钛低压压敏-电容性能的影响.掺入x(Y2O3)0.60%的样品显示出最高的非线性常数(α=7.86)以及最高的相对介电常数(εr=8.54×104)和样品密度(可达理论密度的98.8%),与该样品最高且窄的晶界缺陷势垒相一致,是一种较为理想的压敏-电容陶瓷.提出了TiO2@Y2O3@Nb2O5晶界缺陷势垒模型.     

(Ba,Co,Nb)掺杂SnO2压敏材料电学非线性的研究

通过对样品的伏安特性，晶界势垒的测量和分析，研究了BaCO3对新型(Co，Nb)掺杂SnO2压敏材料微观结构和电学性质的影响。晶界势垒高度测量表明，SnO2晶粒尺寸的迅速减小是压敏电压急剧增高的原因。对Ba含量增加引起SnO2晶粒减小的根源进行了解释。掺杂x(BaCO3)=0．4％的SnO2压敏电阻击穿电压为最小(140V／mm)；掺杂x(BaCO3)-0．8％的SnO2压敏电阻具有最高非线性系数(α=19．6)，最高的势垒电压(ψB=1．28eV)。     

掺锑对二氧化锡压敏电阻性能的影响

通过对样品V-I特性和势垒特性的测试和分析,研究了掺锑对二氧化锡压敏电阻性能的影响.snO2@Co2O3基本上不具有电学非线性,掺杂很少量的Sb2O3可明显改善材料的非线性.研究中发现掺杂x(sb2O3)为0.01%的样品具有最高的质量密度(ρ＝6.90g/cm3)、最高的视在势垒电场(EB＝276V/cm)和最好的电学非线性(a＝12.89).提出了SnO2@Co2O3@Sb2O3的晶界缺陷势垒模型.     

钕掺杂对SnO_2·Co_2O_3·Nb_2O_5压敏电阻瓷电性能的影响

通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。     

CaSi2O2N2:Ce3+/Eu2+荧光粉的发光性能研究

采用高温固相反应法制备了CaSi₂O₂N₂:C e³⁺/Eu ²⁺荧光粉,研究了分别掺杂Ce³⁺、Eu²⁺及Ce³⁺/Eu²⁺共掺 杂时荧光粉 的发光特性。CaSi₂O₂N₂:Ce³⁺在333 nm激发下得到宽波段的发射谱,发射峰 位于395nm,随着Ce³⁺浓度的增大,发 射波长出现明显的红移,猝灭浓度为1mol%。CaSi₂O₂N₂:Eu²⁺在397nm激发下得到峰值位于540nm处的宽波段发射谱, 猝灭浓度为1mol%。对于Ca0.99－2xSi₂O₂N₂:xCe ³⁺,xLi⁺,0.01Eu²⁺荧光粉,在333nm激发下,位于395nm处的发射峰十分微 弱,在540nm处有宽带发射,随着Ce³⁺浓度增大,位于540nm处的Eu²⁺的特征 发射显著增强。对于Ca0.98－ySi₂O₂N₂: 0.01Ce³⁺,0.01Li⁺,yEu²⁺荧光粉,在激发光波长 为333nm,Eu²⁺浓度较低时,可以观察到两个发射带,峰值分 别位于395nm及540nm,随着Eu²⁺浓度增加,位于395nm的 发射强度一直减小,而540nm处的发射强度先增加后减小,猝灭浓 度为0.4mol%。证实了Ce³⁺,Eu²⁺之间发生了有效的能 量传递。计算出Ce 3+、Eu²⁺之间能量传递的效率ηT,在Eu²⁺浓 度为 1mol%时ηT趋于饱和,达到97.7%。通过计算,得到Ce3+ 与Eu²⁺之间的能量传递方式为电偶极-电偶极相互作用。     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.     

选频~(14)CO_2-~(12)CO_2同位素激光器

我们研制了一台~(14)CO_2-~(12)CO_2同位素激光器,测量到激光谱线80条,其中40条是~(14)CO_200°1-(10°0,02°0)_I带的激光跃迁谱线,强线输出功率达4.0W以上;实验还观察到同位素的竞争效应,发现即使~(14)CO_2成份低于~(12)CO_2,其激光辐射仍占优势.     

Layered Al2O3-TiO2 compositedielectric resonators

Aluminium oxide displays a very low tanδ at microwave frequencies. It also possesses a remarkably high thermal conductivity, ideal for heat dissipation in high power satellite filters. However, its temperature coefficient of the resonant frequency (τ_f) is approximately 60 ppm/K. It is shown that the application of a film of titanium oxide which has a T_f of opposite sign (45O ppm/K) produces a composite in which the τ_f can be tuned to be zero over a wide temperature range. The tanδ of the composite at zero T_f is 3.3×10⁵ (Q=30000) at room temperature and at 10 GHz     

Low Rayleigh scatteringP2O5-F-SiO2 glasses

The Rayleigh scattering and infrared absorption losses of P₂ O₅-F-doped silica glass, which is a candidate material for ultra-low-loss optical fiber, were investigated experimentally. The Rayleigh scattering loss of 8.5 wt.% P₂O₅ and 0.3 wt.% F-doped SiO₂ glass is found to be 0.8 times that of pure silica glass. It is also found that the infrared absorption property of P₂O₅-F-SiO₂ glass is almost the same as that of pure silica glass. The minimum loss for the proposed composition is estimated to be 0.11 dB/km at 1.55 μm wavelength, and 0.21 dB/km at 1.3 μm wavelength     

Low-loss polyimide-Ta2O5-SiO2hybrid ARROW waveguides

A low-loss polyimide-Ta₂O₅-SiO₂ hybrid antiresonant reflecting optical waveguide (ARROW) is presented. The ARROW device was fabricated using both the organic and dielectric thin-film technologies. It consists of the fluorinated polyimide, tantalum pentoxide (Ta₂O₅), and silicon dioxide (SiO₂) hybrid layers deposited on a Si substrate. For transverse electric polarized light, the propagation loss of the waveguide as low as 0.4 dB/cm was obtained at 1.31 μm. The propagation loss for transverse magnetic polarized light is 1.5 dB/cm. An ARROW waveguide fabricated using the polyimide-Ta₂O₅ -polyimide material system is also presented for comparison     

Nonlinear optical properties ofK2La(NO3)5.2H2O and K2Ce(NO3)5.2H2O

The harmonic generating properties of potassium lanthanum nitrate (KLN) and potassium cerium nitrate (KCN) are described. These crystals have much larger nonlinear coefficients than potassium dihydrogen phosphate (KDP) and are nearly noncritically phase matched at room temperature for Type I frequency doubling of 1.064-μm light, and for Type II doubling of light near 0.95 μm. Thus, these crystals are useful for generating blue-green light by frequency doubling high-power near-infrared lasers. The crystal growth of KLN and KCN are described by the three component phase diagrams. Crystallographic data for KCN that confirms its structural similarity to KLN are presented. The optical absorption spectra of the two materials are discussed, and the linear refractive indexes are given     

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

The impact of various rapid thermal annealing used during the integration on the La₂O₃/HfO₂ and HfO₂/La₂O₃ stacks deposited by Atomic Layer deposition was analyzed. The consequences of lanthanum localization in such stacks on the evolution of the films during the rapid thermal annealing are investigated in term of morphology, crystalline structure, silicate formation and film homogeneity as a function of the depth. It appeared that the La₂O₃ location has an impact on the temperature of the quadratic phase formation which could be linked to the formation of SiOHfLa silicate and the resistance of the films to dissolution in HF 0.05 wt%.