Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.