卫星通信干扰信号识别技术研究现状及展望

随着通信技术的发展,卫星通信系统面临着日益严重的干扰问题以及干扰识别技术的挑战。针对这一现状,介绍了常见的卫星干扰信号样式及卫星干扰信号的发展趋势,分别从基于特征提取的干扰识别方法、传统机器学习方法以及深度学习方法3个方面介绍了卫星干扰信号分类识别技术的研究现状,分析了其各自的优势与不足。最后对未来卫星干扰信号分类识别技术进行了展望。     

基于小波包分解和残差网络的雷达干扰识别

干扰样式识别是雷达抗干扰技术研究中的重要环节,为提高干扰信号分类识别精度,提出了一种基于小波包分解和残差网络相结合的干扰信号分类识别方法。采用小波包变换对干扰信号进行分解与重构,将干扰信号分解成不同频段的小波包系数,融合各频段小波包系数构成系数矩阵得到残差网络的输入,利用多层残差网络自适应提取小波包系数矩阵深度特征,实现干扰信号分类识别。搭建了雷达干扰信号识别试验平台,采集不同调制参数下的6类雷达干扰数据进行试验分析,结果表明,相对于直接利用干扰信号原始时域IQ数据进行卷积神经网络(Convolutional Neural Network, CNN)识别,所提方法能够有效提高网络输入数据维度和特征提取深度,识别准确率和训练效率有明显提升。     

基于卷积神经网络的调制样式识别研究

自动调制样式识别分类是解调前的重要步骤,在频谱管理、认知无线电、智能调制解调器、监视和干扰识别等许多应用中发挥着重要作用。深度学习具有强大的分类能力,基于深度学习中的卷积神经网络,将映射成星座图的具有不同调制样式的通信信号馈送进神经网络,从而达到通信信号调试样式识别分类的目的。基于实验目的,提出一种改进的卷积神经网络结构可实现对七种不同的调制样式的分类,在信噪比≥5dB时,识别率可达97.99%,信噪比≥9dB时,识别率可达100%。     

基于自注意力机制的干扰信号检测识别

为了解决卫星通信系统在对抗电磁环境中的干扰实时检测识别问题,提出了一种基于自注意力(Self-attention,SA)机制的高效轻量化网络模型。通过采用DenseNet加速对原始IQ信号的特征提取,并引入自注意力模块代替参数量较大的多重卷积层,实现对卫星通信系统中常见的干扰样式进行分类识别。仿真结果表明,在识别准确率方面达到常规的神经网络模型和算法性能水平的条件下,所提模型在网络复杂度和运算时延方面得到有效压缩。     

基于LSTM网络和特征融合的通信干扰识别

针对现有通信干扰信号识别方法识别效果不佳的问题,提出了一种基于长短时记忆网络(Long Short-Term Memory,LSTM)和特征融合的通信干扰识别方法.该方法利用LSTM网络提取干扰信号的特征,通过LSTM强大的序列特征提取能力提升干扰信号特征提取的性能;通过提取信号的时域和频域特征后进行特征融合,使用全连...     

直扩系统中基于SVM的干扰自动分类识别方法

针对实际直接序列扩频系统中的干扰类型总是未知的,难以采用相应的干扰抑制措施有效提高系统性能的问题,提出了直接序列扩频系统中基于支持向量机的干扰自动分类识别方法。首先对直扩系统中八种主要干扰情况进行干扰信号建模;然后分别从时域、频域和时频域提取待识别干扰信号的特征参数;最后使用决策树支持向量机构造了一个5级干扰自动分类识别系统,实现了干扰信号的自动分类识别。仿真结果表明,干信比大于等于9dB时,分类器可以准确识别干扰类型。      

新型干扰样式对某型雷达干扰效果研究

在分析了一种新型干扰样式——梳状谱干扰信号产生方法的基础上,建立了梳状谱干扰信号的数学模型,并仿真得到了梳状谱干扰信号波形和功率谱。在分析了某型地面情报雷达接收和信号处理技术的基础上,建立了该雷达的系统模型,以此为平台,仿真分析了梳状谱干扰信号对该雷达的干扰效果,并与传统阻塞式干扰信号对该雷达的干扰效果进行比较分析,得到了有益的结果。研究成果将为我军雷达的合理部署和使用,以及电子对抗装备技术的发展和作战使用提供支持。     

基于时频图像Zernike 矩特征的欺骗干扰识别

为了有效应对跟踪雷达的三种常见欺骗干扰,提出了一种基于平滑伪魏格纳-维尔分布时频图像的Zernike 矩特征的干扰识别方法。该方法对三种干扰下的雷达接收信号进行时频分析,运用数字图像处理技术对时频图像进行一系列的预处理后,通过Zernike 矩特征提取图像的细节特征组成特征向量进行分类识别。仿真实验证明:该方法有较高的识别率,特别是该方法受信噪比影响较小,能够有效降低噪声对干扰识别的影响,说明了采用图像识别方法对雷达欺骗干扰信号进行分类识别的可行性。通过与其他文献方法的比较,证明了该方法的优越性。     

TDMA数字移动通信系统最佳干扰样式研究

从通信对抗角度出发,对时分多址（TDMA）数字移动通信系统干扰信号的最佳干扰样式进行了研究,提出了符合干扰对象协议标准的训练序列为干扰信号的干扰样式,将这种信号与传统干扰信号进行了比较和计算机仿真。仿真结果表明,这种干扰样式能够对TDMA移动通信系统的同步和均衡过程产生有效的干扰,并且在干扰功率和抗频偏两个方面具有明显优势,对实际应用具有很好的参考价值。     

时分噪声调频干扰性能分析与验证

时分噪声调频干扰是一种常用的多目标干扰样式,对其性能的分析研究具有重要意义。构建了时分噪声调频干扰信号的产生模型,统计了不同的干扰重复周期、有效调制带宽和占空比下时分噪声调频干扰信号的功率和干扰带宽,分析出这些参数对时分噪声调频干扰信号功率和干扰带宽的影响,指出了关于脉冲信号带宽认识上的误区。对时分多目标干扰模拟设备生成的信号进行了测试,验证了相关结论。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.