A broad-band tunable CMOS channel-select filter for a low-IFwireless receiver

This paper presents a broad-band bandpass filter (BPF) designed as a channel-select filter for wireless applications. It is implemented as a low-pass filter (LPF) in series with a high-pass filter (HPF) for lower power consumption compared to true BPF. Semiscaling of the filter nodes is superior in the wireless receiver over traditional full scaling. The HPF is built with low-pass feedback of an amplifier. The bandwidth is selectable from 625 kHz, 2.5 MHz, or 10 MHz. The filter stopband loss is more than 50 dB extending beyond 100 MHz, and passband ripple less than 2.5 dB. Fabricated in a 0.6-μm CMOS process, it provides a minimum input noise of 16 nV/√Hz noise with 22.5-dBm out-of-band IIP3, while draining an average 14 mA from 3.3 V     

A High Dynamic Range Programmable CMOS Front-End Filter with a Tuning Range from 1850 to 2400 MHz

This paper presents a highly programmable front-end filter and amplifier intended to replace SAW filters and low noise amplifiers (LNA) in multi-mode direct conversion radio receivers. The filter has a 42 MHz bandwidth, is tunable from 1850 to 2400 MHz, achieves a 5.8 dB NF, –25 dBm in-band 1-dB input compression point (ICP) and 0 dBm out-of-band ICP while drawing 26 mA from a 2.5 V supply.     

A 4th-order reconfigurable analog baseband filter for software-defined radio applications

This paper presents a 4th-order reconfigurable analog baseband filter for software-defined radios.The design exploits an active-RC low pass filter（LPF） structure with digital assistant,which is flexible for tunability of filter characteristics,such as cut-off frequency,selectivity,type,noise,gain and power.A novel reconfigurable operational amplifier is proposed to realize the optimization of noise and scalability of power dissipation.The chip was fabricated in an SMIC 0.13μm CMOS process.The main filter and frequency calibration circuit occupy 1.8×0.8 mm² and 0.48×0.25 mm² areas,respectively.The measurement results indicate that the filter provides Butterworth and Chebyshev responses with a wide frequency tuning range from 280 kHz to 15 MHz and a gain range from 0 to 18 dB.An IIP3 of 29 dBm is achieved under a 1.2 V power supply.The input inferred noise density varies from 41 to 133 nV/（Hz）^1/2 according to a given standard,and the power consumptions are 5.46 mW for low band（from 280 kHz to 3 MHz） and 8.74 mW for high band（from 3 to 15 MHz） mode.     

An image-rejecting mixer and vector filter with 55-dB imagerejection over process, temperature, and transistor mismatch

This paper describes an image-rejecting mixer and vector filter for use in radio systems with channel bandwidths in the range of 1 MHz. The circuit replaces the SAW filter and second downconverter commonly used in this style of radio. Because the output of the circuit is at an IF of 5 MHz, traditional demodulation methods including limiting and FM discrimination can still be used. The circuit is based on a quadrature mixer that guarantees good performance despite device mismatches and process variation. The circuit consumes 29 mA at 3.3 V,and achieves better than 55-dB image rejection despite device mismatches and process variation and is implemented in a single-poly triple metal 0.5 μm CMOS process with linear capacitor implants. The circuit is designed for input signals from 125 to 250 MHz. Input referred voltage noise is 900 μVrms. The in-band IP3 is 18 dBm. By changing an external reference frequency, the passband width of the filter can be varied from 3 to 0.5 MHz     

Tunable LNA filter design using coupled-inductor Q-enhancement

A tunable LNA filter using Q-enhanced inductors is designed in 0.25 μm BiCMOS Qubic4x technology. The design employs the inductor degenerated LNA, acting as a transconductance which converts the input voltage to output current which drives the second-order Q-enhanced filter. The filter also uses a special technique based on coupled-inductor negative resistance generator to make the quality factor and the center frequency tunable. The overall gain of the LNA filter is about 19.5 dB and the minimum noise figure is 6.4 dB. The center frequency is 942.5 MHz with a 42 MHz (3 dB) bandwidth.     

A cascaded continuous-time /spl Sigma//spl Delta/ Modulator with 67-dB dynamic range in 10-MHz bandwidth

This paper presents the design of a 2-2 cascaded continuous-time sigma-delta modulator. The cascaded modulator comprises two stages with second-order continuous-time resonator loopfilters, 4-bit quantizers, and feedback digital-to-analog converters. The digital noise cancellation filter design is determined using continuous-time to discrete-time transformation of the sigma-delta loopfilter transfer functions. The required matching between the analog and digital filter coefficients is achieved by means of simple digital calibration of the noise cancellation filter. Measurement results of a 0.18-/spl mu/m CMOS prototype chip demonstrate 67-dB dynamic range in a 10-MHz bandwidth at 8 times oversampling for a single continuous-time cascaded modulator. Two cascaded modulators in quadrature configuration provide 20-MHz aggregate bandwidth. Measured anti-alias suppression is over 50 dB for input signals in the band from 150 to 170 MHz around the sampling frequency of 160 MHz.     

CMOS continuous-time current-mode filters for high-frequencyapplications

Design considerations for high-frequency CMOS continuous-time current-mode filters are presented. The basic building block is a differential current integrator with its gain constant set by a small-signal transconductance and a gate capacitance. A prototype fifth-order low-pass ladder filter implemented in a standard digital 2 μm n-well CMOS process achieved a -3 dB cutoff frequency (f ₀) of 42 MHz; f₀ was tunable from 24 to 42 MHZ by varying a reference bias current from 50 to 150 μA. Using a single 5 V power supply with a nominal reference current of 100 μA, the five-pole filter dissipated 25.5 mW. The active filter area was 0.056 mm²/pole. With the minimum input signal defined as the input-referred noise integrated over a 40 MHz bandwidth, and the maximum input signal defined at the 1% total intermodulation distortion (TIMD) level, the measured dynamic range was 69 dB. A third-order elliptic low-pass ladder filter was also integrated in the 2 μm n-well CMOS process to verify the implementation of finite transmission zeros     

片上自动调谐的可编程有源RC滤波器

研制了一款可编程6阶巴特沃斯有源RC滤波器.为提高滤波器中运算放大器的增益带宽积,设计了一种新型的前馈补偿运算放大器.为消除工艺偏差和环境变化对截止频率的影响,设计了一种片上数字控制频率调谐电路,并采用TSMC 0.18 μm CMOS工艺进行了流片.滤波器采用低通滤波结构,测试结果表明,3 dB截止频率为1～32 MHz,步进1 MHz,带内增益0 dB,带内纹波0.8 dB,2倍带宽处带外抑制不小于24 dBc,5倍带宽处带外抑制不小于68 dBc,滤波器等效输入噪声为340 nV/√Hz@1MHz,调谐误差为±3％.滤波器裸芯片面积0.87 mm×1.05 mm.采用1.8V电源电压,滤波器整体功耗小于20 mW.     

Noise-Shaping Gain-Filtering Techniques for Integrated Receivers

In this paper, a new technique for realizing area-efficient, low-noise filters is introduced. The proposed filter topologies utilize noise shaping techniques to shift the noise of the passive and active filter components out of the passband of the filter. This is illustrated by implementing a programmable noise-shaped post-mixer gain-filtering circuit for a CMOS Mobile-TV tuner. The proposed circuits relax the noise-linearity tradeoff in the receiver chain by providing blocker rejection following the mixer outputs. The filter provides an in-band input referred noise density as low as 7.5 nV/sqrt(Hz). The measured out-of-band IIP3 values are 30 dBV and 31.5 dBV for the 3.8-MHz (DVB-H) and 750-kHz (ISDB-T) modes, respectively. Total current consumption is 5.5 mA from a 1.2-V supply. The gain of the block is programmable to be 0 dB, 8 dB, 14 dB, or 20 dB. The design occupies a die area of 0.28 mm² in a 65-nm CMOS process covering a frequency band of 700 kHz to 5.2 MHz as a universal mobile-TV integrated baseband gain-filtering solution.     

An electronically programmable transversal input filter

Describes the design and performance of a 64-stage, electronically programmable, binary-analog transversal input filter (PTIF). The monolithic filter consists of an array of two-phase buried-channel CCDs with surface channel inputs, operated in a single-ended configuration and driven with a single clock. Digital NMOS support circuitry permits programming of bipolar weighting coefficients while maintaining code independent offset. The device has been operated as a pseudorandom noise sequence matched filter with a dynamic range of 55 dB at 8 MHz and a near theoretical processing gain of 18 dB. Correlation has been demonstrated at 20 MHz.     

A 4224 MHz low jitter phase-locked loop in 0.13-μm CMOS technology

A 4224 MHz phase-locked loop (PLL) is implemented in 0.13 μm CMOS technology. A dynamic phase frequency detector is employed to shorten the delay reset time so as to minimize the noise introduced by the charge pump. Dynamic mismatch of charge pump is considered. By balancing the switch signals of the charge pump, a good dynamic matching characteristic is achieved. A high-speed digital frequency divider with balanced input load is also designed to improve in-band phase noise performance. The 4224 MHz PLL achieves phase noises of-94 dBc/Hz and -114.4 dBc/Hz at frequency offsets of 10 kHz and 1 MHz, respectively. The integrated RMS jitter of the PLL is 0.57 ps (100 Hz to 100 MHz) and the PLL has a reference spur of-63 dB with the second order passive low pass filter.     

Robust highly linear high-frequency CMOS OTA with IM3 below - 70 dB at 26 MHz

An enhanced configuration for a linearized MOS operational transconductance amplifier (OTA) is proposed. The proposed fully differential OTA circuit is based on resistive source degeneration and an improved adaptive biasing technique. It is robust to process variation, which has not been fully shown in previously reported linearization techniques. Detailed harmonic distortion analysis demonstrating the robustness of the proposed OTA is introduced. The transconductance gain is tunable from 160 to 340 /spl mu/S with a third-order intermodulation (IM3) below -70 dB at 26 MHz. As an application, a 26-MHz second-order low-pass filter fabricated in TSMC 0.35-/spl mu/m CMOS technology with a power supply of 3.3 V is presented. The measured IM3 with an input voltage of 1.4 Vpp is below - 65 dB for the entire filter pass-band, and the input referred noise density is 156nV//spl radic/Hz. The cutoff frequency of the filter is tunable in the range of 13-26 MHz. Theoretical and experimental results are in good agreement.     

A novel low power flip-flop design using footless scheme

A highly compact source follower coupling based low-pass filter (LPF) topology is proposed that synthesizes a 3rd-order low-pass transfer function in a single stage with no use of operational amplifiers. Chopper stabilization technique is utilized to reduce 1/f noise for minimizing the in-band integrated noise. Implemented and simulated in a 0.18 μm CMOS process, the 3rd-order LPF achieves a ??3 dB bandwidth of 20 MHz with a 280 μA total current from a 1.4 V supply voltage, defining a power-per-pole/bandwidth efficiency of 6.5 μW/MHz. The output noise density at low frequencies is largely reduced with chopper stabilization technique. The integrated output noise from 10 kHz to 2 MHz is minimized from 22.47 to 7.04 μV_rms, with a 10.1 dB improvement. The averaged output noise density over the filter bandwidth is 9.4 nV/√Hz, which is mostly contributed by thermal noise of transistors.     

A 35-mW 3.6-mm/sup 2/ fully integrated 0.18-/spl mu/m CMOS GPS radio

A single-chip CMOS Global Positioning System (GPS) radio has been integrated using only a couple of external passive components for the input matching network and one external reference for the synthesizer. The receiver downconverts the GPS L1 signal at 1575.42 MHz to an IF of 9.45 MHz. The complete front-end and frequency synthesizer section have been integrated: low noise amplifier, image rejection mixer, IF active filter, and the full phase-locked loop synthesizer, including voltage-controlled oscillator and loop filter. The front-end measured performances are 81-dB maximum gain, 5.3-dB noise figure, and >30-dB image rejection. The synthesizer features a phase noise of -95 dBc/Hz at 1-MHz offset and a total integrated phase noise of less than 7/spl deg/ rms in the 500-Hz-1.5-MHz band. The front-end and the synthesizer draw, respectively, 11 and 9 mA from a 1.8-V supply. The architecture of the front-end and synthesizer has been geared to high level of integration and reduction of silicon area at the lowest possible power consumption. Consequently, the one reported here is the smallest and most integrated CMOS GPS receiver reported so far.     

采用射频频率调制光谱实现半导体激光器稳频

利用半导体激光器可直接对注入电流进行高速调制的特点，将20MHz射频(RF)信号直接加在半导体激光器的高频调制端口，射频信号的一部分经过相移器后，与雪崩光电探测器(APD)所探测的饱和吸收光谱信号进行混频，经低通滤波器后产生了类色散曲线；将半导体激光器的输出频率稳定在铯原子D2线的^6S1/2(F=4)→^6P2/2(F'=5)的超精细跃迁线上，实验所测的10s内典型的频率起伏小于1MHz；这种稳频技术不需锁相放大器，具有可避免低频段较高的强度噪声和较大的频率捕获范围的优点。     

Design and analysis of a CMOS passive Σ∆ ADC for low power RF transceivers

Design and analysis of a Σ∆ modulator with a passive switched capacitor loop filter is presented. Design steps for optimum loop filter design for quantization noise suppression and thermal noise reduction is outlined. Design specifications for sampling clock phase noise, reference buffer and input buffer settling is analyzed. Presented design has a 2nd-order loop filter and uses only metal-metal capacitors and thin oxide digital transistors with no additional components occupying less than 0.1 mm² silicon area in 0.13 μm CMOS digital process. Measurement results show that the ADC achieves 80 dB peak SNR at a 100 kHz integration bandwidth with 1 pJ/sample conversion efficiency. With decimation filter power consumption of 0.22 mW at 104 MHz sampling rate, the ADC consumes only about 1 mA at 1.5 V for each channel.     

一种用于无线接收机的噪声整形可重构复数带通/低通滤波器的设计

A reconfigurable complex band-pass （CBP）/low-pass （LP） active-RC filter with a noise-shaping technique for wireless receivers is presented. Its bandwidth is reconfigurable among 500 kHz, 1 MHz and 4 MHz in LP mode and 1 MHz, 2 MHz and 8 MHz in CBP mode with 3 MHz center frequency. The Op-Amps used in the filter are realized in cell arrays in order to obtain scalable power consumption among the different operation modes. Furthermore, the filter can be configured into the 1st order, 2nd order or 3rd order mode, thus achieving a flexible filtering property. The noise-shaping technique is introduced to suppress the flicker noise contribution. The filter has been implemented in 180 nm CMOS and consumes less than 3 mA in the 3rd 8 MHz-bandwidth CBP mode. The spot noise at 100 Hz can be reduced by 14.4 dB at most with the introduced noise-shaping technique.     

一种带有精准调谐结构的有源RC低通滤波器的设计

提出了一种带有精准调谐结构的有源RC低通滤波器的设计方案,其截止频率为5MHz,并在0.18μm标准CMOS工艺线上流片得到验证.调谐精度达到(-1.24%,+2.16%),测试中得到验证.调谐系统所占芯片面积仅为主滤波器面积的1/4.调谐系统完成调谐功能后会自动关闭,降低了功耗以及对主滤波器的串扰.以50Ω作为源阻抗,滤波器带内3阶交调量(IIP3)好于16.1dBm.滤波器输入参考噪声为36μVrms.滤波器群延迟时间波动测试结果为24ns.滤波器功耗为3.6mW.带有这种调谐结构的滤波器容易被实现,可以用于很多无线低中频应用中,例如全球定位系统、全球通和码分多址等芯片系统中.     

A high sensitivity and wide dynamic range zero-IF RF receiver for cognitive radio application

This paper presents an RF receiver of zero-Intermediate Frequency (IF) architecture for Cognitive Radio (CR) communication systems. Zero-IF architecture reduce the image reject filter and IF filter, so it is excellent in low cost, compact volume, and low power dissipation. The receiver employs three digital attenuator and a high gain, high linearity low noise amplifier to achieve wide dynamic range of 70 dB and high receiving sensitivity of −81 dBm. A fully balanced I/Q demodulator and a differential Local Oscillator (LO) chips are used to minimize the negative effects caused by second-order distortion and LO leakage. In order to select an 8 MHz-channel from 14 continuous ones located in UHF band (694–806 MHz) accurately, approach of channel selectivity circuits is proposed. The RF receiver has been designed, fabricated, and test. The measured result shows that the noise figure is 3.4 dB, and the error vector magnitude is 7.5% when the input power is −81 dBm.     

3-D Integration of 10-GHz Filter and CMOS Receiver Front-End

A 10-GHz filter/receiver module is implemented in a novel 3-D integration technique suitable for RF and microwave circuits. The receiver designed and fabricated in a commercial 0.18-mum CMOS process is integrated with embedded passive components fabricated on a high-resistivity Si substrate using a recently developed self-aligned wafer-level integration technology. Integration with the filter is achieved through bonding a high-Q evanescent-mode cavity filter onto the silicon wafer using screen printable conductive epoxy. With adjustment of the input matching of the receiver integrated circuit by the embedded passives fabricated on the Si substrate, the return loss, conversion gain, and noise figure of the front-end receiver are improved. At RF frequency of 10.3 GHz and with an IF frequency of 50 MHz, the integrated front-end system achieves a conversion gain of 19 dB, and an overall noise figure of 10 dB. A fully integrated filter/receiver on an Si substrate that operates at microwave frequencies is demonstrated.