离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器

用纯Ar离子束刻蚀方法制备出大功率高效率6 5 0 nm实折射率Al Ga In P压应变量子阱激光器.对偏角衬底,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面.制备的激光器条宽腔长分别为4 μm和6 0 0 μm,前后端面镀膜条件为10 % / 90 % .室温下阈值电流的典型值为4 6 m A,输出功率为4 0 m W时仍可保持基横模.10 m W,4 0 m W时的斜率效率分别为1.4 W/ A和1.1W/ A.     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0.82mW/mA和2.59mA,激光器在23mA时输出16mW最大光功率.氧化直径为5μm的激光器25℃时的最小阈值电流为570μA,其最大饱和光功率为5.5mW.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能85 0 nm氧化限制型垂直腔面发射激光器.研制出的氧化直径为9μm的激光器2 5℃时的斜效率和阈值电流分别为0 .82 m W/m A和2 .5 9m A,激光器在2 3m A时输出16 m W最大光功率.氧化直径为5μm的激光器2 5℃时的最小阈值电流为5 70μA,其最大饱和光功率为5 .5 m W.     

高功率GaSb基2.6微米InGaAsSb/AlGaAsSbⅠ型量子阱室温工作激光器（英文）

成功制备出2.6μmGaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量,将量子阱的生长温度优化至500℃,并将量子阱的压应变调节为1.3%.制备了脊宽100μm、腔长1.5mm的激光单管器件.在未镀膜下该激光器实现了最大328mW室温连续工作,阈值电流密度为402A/cm~2,在脉冲工作模式下,功率达到700mW.     

高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器

成功制备出2.6μm GaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量, 将量子阱的生长温度优化至500℃, 并将量子阱的压应变调节为1.3%.制备了脊宽100 μm 、腔长1.5 mm的激光单管器件.在未镀膜下该激光器实现了最大328 mW室温连续工作, 阈值电流密度为402 A/cm2, 在脉冲工作模式下, 功率达到700 mW.     

高斜效率高功率850nm氧化限制型垂直腔面发射激光器

报道了MOCVD生长的高性能850nm氧化限制型垂直腔面发射激光器．研制出的氧化直径为9μm的激光器25℃时的斜效率和阈值电流分别为0．82mW／mA和2．59mA，激光器在23mA时输出16mW最大光功率．氧化直径为5μm的激光器25℃时的最小阈值电流为570μA，其最大饱和光功率为5．5mW．     

高温(T=80℃)连续激射的2μm InGaSb/AlGaAsSb量子阱激光器

研制了激射波长为2μm的InGaSb/AlGaAsSb应变量子阱激光器。室温连续工作时,电流为1.2A时,出光功率为82.2mW。激光器连续工作温度可高达80℃,出光功率为63.7mW。     

镀膜对2.0μm锑化物激光器性能的提升

基于InGaSb/AlGaAsSb材料体系,制备出了一款高性能的镀膜激光器。为了性能对比,同时制备了未镀膜激光器。未镀膜的器件在注入电流为3.0A时,室温连续模式下的输出功率达到300mW,最大插头效率为8.3%。镀膜器件在注入电流为2.6A时,室温连续模式下的输出功率达到380mW,最大插头效率为15.6%;另外,在0.3~2.4A的注入电流范围内,镀膜器件的插头效率均大于10.0%,激射波长均在2.0μm附近。     

两个激光二极管端面泵浦的基横模Nd：YAG激光器

用两个功率为１．５Ｗ的连续激光二极管偏振耦合端面泵浦及分别从双端同时泵浦Ｎｄ：ＹＡＧ激光器，ＴＥＭ００模ＹＡＧ激光最大输出功率分别为６８０ｍＷ和４９２ｍＷ，总的光－光转换效率分别为２６．４％和１７．７％。从理论上对二极管单端面及双端面泵浦的ＹＡＧ激光器进行了分析计算。     

High output power and high temperature operation of 1.5 μmDFB-PPIBH laser diodes

Highly efficient 1.5-μm distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed using a metal-organic chemical vapor deposition technique are discussed. An average slope efficiency of 0.26 mW/mA (quantum efficiency 33%) and maximum slope efficiency of 0.39 mW MW/mA (49%) were achieved. The full width at half maximum in the direction perpendicular to the junction plane of 25° was obtained. A high output power of 77 mW was obtained under CW conditions at room temperature. This laser diode lased up to 120°C, and more than 10 mW was obtained, even at 90°C     

Low-threshold, high-power, single-longitudinal-mode operation i 1.5μm multiple-quantum-well, distributed-feedback laser diodes

Extremely low-threshold, single-longitudinal-mode operation is reported for 1.5 μm band GaInAs multiple quantum well, distributed feedback laser diodes. A 5.5 mA minimum threshold current as well as 40 mW maximum light output power and 0.33 W/A maximum quantum efficiency have been attained under CW condition at room temperature     

Fabrication and performance of GaAs p+n junction and Schottky barrier millimeter IMPATT's

A recently developed procedure, incorporating both preferential electrochemical etching for wafer thinning and electroplating for heat sink formation has been applied to the fabrication of Kaband (26.5-40 GHz) GaAs IMPATT's. Both epitaxially grown GaAs p⁺n junction and Cr Schottky barrier diodes have been fabricated. This procedure makes possible the batch fabrication of small area diodes (<2 times 10^{-5}cm²) over a large wafer area. The diodes have been operated both in the oscillator and stable-amplifier mode. Power, efficiency, and noise performance of the devices is reported. The p⁺n diodes, which could withstand junction temperature of over 300°C, gave the best power and efficiency. Powers as high as 680 mW with 12.4 percent efficiency at 34.8 GHz and an efficiency as high as 16 percent with 390 mW at 29.5 GHz have been achieved. The Cr Schottky diodes were unable to withstand junction temperatures in excess of 200°C and therefore produced less power despite the potentially better power handling capability. The highest power obtained from a Cr Schottky is 470 mW with 12.5 percent efficiency at 34 GHz. Comparable oscillator noise performance has been obtained with both types of diode. The best AM (DSB) double sideband NSR obtained is -135 dB in a 100 Hz window at 1.5 MHz from the carrier. An rms frequency deviation as low as 13 Hz in a 100 Hz window has been observed with a power output of 164 mW at 35.4 GHz by raising the external Q to 138. A lowest FM noise measure of 23 dB was achieved by reducing output power to 16 mW. The amplifier noise figure measured for both p⁺n and Cr Schottky diodes is 26 dB.     

GaN基蓝紫光激光器的材料生长和器件研制

报道了国内首次研制成功的GaN基蓝紫光激光器的材料外延生长、器件工艺和特性.用MOCVD生长了高质量的GaN及其量子阱异质结材料,以及异质结分别限制量子阱激光器结构材料.GaN材料的X射线双晶衍射摇摆曲线(0002)对称衍射和(10(-1)2)斜对称衍射半宽分别为180″和185″;3μm厚GaN薄膜室温电子迁移率达到850cm2/(V·s).基于以上材料,分别成功研制了室温脉冲激射增益波导和脊型波导激光器,阈值电流密度分别为50和5kA/cm2,激光发射波长为405.9nm,脊型波导结构激光器输出光功率大于100mW.     

Nd:CNGG晶体的生长及其性能研究

报道了Nd:CNGG晶体的生长,并对其结构、透过谱以及激光振荡性能进行了研究.利用1W的激光二极管为抽运源,在吸收功率为670mW时获得123.1mW的1.062μm连续激光输出,斜效率达到22.3%.结果表明,Nd:CNGG晶体是一种非常适合激光二极管抽运的固体激光材料.     

M~2≤1.14的LD抽运的Yb:YAG微晶片激光器

采用国产1W的InGaAs激光二极管(LD),掺杂浓度为10at.-％的Yb:YAG微晶片(φ5mm×0.6mm),室温下获得了输出功率91.5mW,波长1.049μm的基模激光连续输出,光束质量M~2≤1.14,斜率效率为30％。在晶体制冷情况下,获得了111mW的激光输出,斜率效率达40％。     

Internally folded Nd:YAG and Nd:YVO4 lasers pumped bylaser diodes

An efficient, scalable, diode-pumped Nd laser design is reported. The gain element can be longitudinally pumped along five separate axes and is relatively simple to fabricate. Both Nd:YAG and Nd:YVO₄ gain media were evaluated. Using five single-stripe laser diodes to pump the Nd:YAG, 3.94 W of absorbed power produced 2.1 W CW at 1.06 μm. The slope efficiency was 54 percent and the output was TEM₀₀. The threshold power was 40 mW. No evidence of thermal saturation was observed up to the maximum pump power. Repetitively Q-switched operation is also reported. The maximum output power for Nd:YVO₄ obtained with 2.9 W of pump power was 1.3 W. The slope efficiency was 47 percent     

Tunable extremely low threshold vertical-cavity laser diodes

Submilliampere-threshold wavelength-tunable three-terminal vertical-cavity laser diodes have been fabricated by proton implantation and wet chemical etching. Laser diodes of 8-μm active diameter exhibit record low threshold currents of 650 μA and emit upto 170-μW output power under CW conditions and 0.4 mW under pulsed excitation. Slightly larger devices of about 12-μm diameter emit up to 1.85 mW in a single mode under pulsed conditions. The emission wavelength is about 970 nm and matched to the spectral gain of the three active InGaAs quantum wells. Individual elements in a two-dimensional array can be continuously tuned over 2.2 nm by applying separate tuning currents of 70 μA to the corresponding top mesa electrodes. Tuning and laser currents are controlled independently     

GaSb Photodiode for detection of 1.73 ?m radiation of Er:YLF laser

We have developed a GaSb photodiode for receiving the 1.73 ?m radiation of a solid-state laser (Er:YLF). The diode layers have been grown by LPE on (100)-oriented Te-doped GaSb substrates. The peak value of the responsivity of the diodes is 0.55 A/W at a wavelength of 1.73 ?m corresponding to a quantum efficiency of 40%. The best RA product of the diodes is 83 ?cm2. The data are obtained without anti-reflection coating.